PD - 97103B IRFB4321PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance l Improved Diode Recovery Improves Switching & EMI Performance l 30V Gate Voltage Rating Improves Robustness l Fully Characterized Avalanche SOA HEXFET(R) Power MOSFET VDSS RDS(on) typ. max. ID 150V 12m: 15m: 85A D D G G S D S TO-220AB G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25C Parameter Continuous Drain Current, VGS @ 10V Max. Units 85 c A ID @ TC = 100C Continuous Drain Current, VGS @ 10V 60 IDM Pulsed Drain Current d 330 PD @TC = 25C Maximum Power Dissipation 350 W Linear Derating Factor 2.3 30 W/C V EAS (Thermally limited) Gate-to-Source Voltage Single Pulse Avalanche Energy e 120 mJ TJ Operating Junction and -55 to + 175 C TSTG Storage Temperature Range VGS 300 Soldering Temperature, for 10 seconds (1.6mm from case) 10lbxin (1.1Nxm) Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. RJC Junction-to-Case g --- 0.43 RCS Case-to-Sink, Flat, Greased Surface Junction-to-Ambient g 0.50 --- --- 62 RJA www.irf.com Units C/W 1 12/9/10 IRFB4321PbF Static @ TJ = 25C (unless otherwise specified) Symbol Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance RG(int) Min. Typ. Max. Units 150 --- --- 3.0 --- --- --- --- --- --- 150 12 --- --- --- --- --- 0.8 Conditions --- V VGS = 0V, ID = 250A --- mV/C Reference to 25C, ID = 1mA 15 m VGS = 10V, ID = 33A 5.0 V VDS = VGS, ID = 250A 20 A VDS = 150V, VGS = 0V 1.0 mA VDS = 150V, VGS = 0V, TJ = 125C 100 nA VGS = 20V -100 VGS = -20V --- f d Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Min. Typ. Max. Units Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 130 --- --- --- --- --- --- --- --- --- --- --- 71 24 21 18 60 25 35 4460 390 82 --- 110 --- --- --- --- --- --- --- --- --- S nC ns pF Conditions VDS = 25V, ID = 50A ID = 50A VDS = 75V VGS = 10V VDD = 98V ID = 50A RG = 2.5 VGS = 10V VGS = 0V VDS = 50V = 1.0MHz f f Diode Characteristics Symbol Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr Qrr IRRM ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time d Min. Typ. Max. Units --- --- --- 85 c 330 Conditions A MOSFET symbol A showing the integral reverse D G p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 50A, VGS = 0V --- 89 130 ns ID = 50A --- 300 450 nC VR = 128V, --- 6.5 --- A di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.095mH RG = 25, IAS = 50A, VGS =10V. Part not recommended for use above this value. 2 --- f S f Pulse width 400s; duty cycle 2%. R is measured at TJ approximately 90C www.irf.com IRFB4321PbF 1000 1000 100 BOTTOM 10 1 5.0V 100 BOTTOM 5.0V 10 60s PULSE WIDTH Tj = 175C 60s PULSE WIDTH Tj = 25C 1 0.1 0.1 1 10 0.1 100 Fig 1. Typical Output Characteristics 10 100 Fig 2. Typical Output Characteristics 3.5 1000 TJ = 175C 10 TJ = 25C VDS = 25V 60s PULSE WIDTH 0.1 3.0 4.0 5.0 6.0 7.0 8.0 VGS = 10V 3.0 2.5 (Normalized) 100 1 ID = 50A RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current() 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 2.0 1.5 1.0 0.5 9.0 -60 -40 -20 VGS, Gate-to-Source Voltage (V) 7000 VGS, Gate-to-Source Voltage (V) Coss = Cds + Cgd 5000 Ciss 4000 3000 Coss 2000 1000 Crss 10 100 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage www.irf.com ID= 50A VDS = 120V 16 VDS= 75V VDS= 30V 12 8 4 0 0 1 20 40 60 80 100 120 140 160 180 Fig 4. Normalized On-Resistance vs. Temperature 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 6000 0 TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics C, Capacitance (pF) VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 0 20 40 60 80 100 120 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 3 IRFB4321PbF 1000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 1000 100 TJ = 175C 10 TJ = 25C 1 OPERATION IN THIS AREA LIMITED BY R DS (on) 100sec 100 1msec 10 10msec 1 Tc = 25C Tj = 175C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 VSD , Source-to-Drain Voltage (V) ID , Drain Current (A) 70 60 50 40 30 20 10 0 50 75 100 125 150 175 V(BR)DSS , Drain-to-Source Breakdown Voltage LIMITED BY PACKAGE 25 1000 190 180 170 160 150 140 -60 -40 -20 TC , Case Temperature (C) 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage 5.0 EAS, Single Pulse Avalanche Energy (mJ) 500 4.0 Energy (J) 100 VDS , Drain-toSource Voltage (V) 90 80 10 Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 3.0 2.0 1.0 0.0 ID 13A 20A BOTTOM 50A TOP 400 300 200 100 0 0 20 40 60 80 100 120 140 VDS, Drain-to-Source Voltage (V) Fig 11. Typical COSS Stored Energy 4 DC 160 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (C) Fig 12. Maximum Avalanche Energy Vs. DrainCurrent www.irf.com IRFB4321PbF Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.1 R1 R1 0.10 J 0.05 0.02 0.01 J 1 R2 R2 R3 R3 2 1 3 2 Ci= i/Ri Ci= i/Ri 0.01 Ri (C/W) C SINGLE PULSE ( THERMAL RESPONSE ) 3 (sec) 0.085239 0.000052 0.18817 0.00098 0.176912 0.008365 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) Duty Cycle = Single Pulse Avalanche Current (A) 0.01 10 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 120 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) TOP Single Pulse BOTTOM 1% Duty Cycle ID = 50A 100 80 60 40 20 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (C) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 15. Maximum Avalanche Energy vs. Temperature www.irf.com 5 IRFB4321PbF 40 ID = 1.0A ID = 1.0mA ID = 250A 5.0 30 4.0 IRRM - (A) VGS(th), Gate threshold Voltage (V) 6.0 3.0 20 IF = 33A VR = 128V 10 2.0 TJ = 125C TJ = 25C 0 1.0 -75 -50 -25 0 25 50 75 100 200 300 400 500 600 700 800 900 1000 100 125 150 175 dif / dt - (A / s) TJ , Temperature ( C ) Fig. 17 - Typical Recovery Current vs. dif/dt Fig 16. Threshold Voltage Vs. Temperature 40 3200 2800 2400 QRR - (nC) IRRM - (A) 30 20 10 0 2000 1600 1200 IF = 50A VR = 128V IF = 33A VR = 128V 800 TJ = 125C TJ = 25C TJ = 125C TJ = 25C 400 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / s) dif / dt - (A / s) Fig. 18 - Typical Recovery Current vs. dif/dt Fig. 19 - Typical Stored Charge vs. dif/dt 3200 2800 QRR - (nC) 2400 2000 1600 1200 800 400 0 IF = 50A VR = 128V TJ = 125C TJ = 25C 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / s) 6 Fig. 20 - Typical Stored Charge vs. dif/dt www.irf.com IRFB4321PbF D.U.T Driver Gate Drive - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + D= Period P.W. + + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Current Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V DRIVER L VDS tp D.U.T RG + V - DD IAS VGS 20V tp A 0.01 I AS Fig 22a. Unclamped Inductive Test Circuit LD Fig 22b. Unclamped Inductive Waveforms VDS VDS 90% + VDD - 10% D.U.T VGS VGS Pulse Width < 1s Duty Factor < 0.1% td(on) Fig 23a. Switching Time Test Circuit tr td(off) tf Fig 23b. Switching Time Waveforms Id Vds Vgs L DUT 0 1K VCC Vgs(th) Qgs1 Qgs2 Fig 24a. Gate Charge Test Circuit www.irf.com Qgd Qgodr Fig 24b. Gate Charge Waveform 7 IRFB4321PbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 IN T HE ASS EMBLY LINE "C" Note: "P" in as sembly line pos ition indicates "Lead - Free" INT ERNAT IONAL RECT IFIER LOGO AS SEMBLY LOT CODE PART NUMBER DAT E CODE YEAR 0 = 2000 WEEK 19 LINE C TO-220AB packages are not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/10 8 www.irf.com