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7MBR100VR060-50 IGBT Modules
IGBT MODULE (V series)
600V / 100A / PIM
Features
Low VCE(sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specied)
Items Symbols Conditions Maximum
ratings Units
Inverter
Collector-Emitter voltage VCES 600 V
Gate-Emitter voltage VGES ±20 V
Collector current
Ic Continuous Tc=80°C 100
A
Icp 1ms Tc=80°C 200
-Ic 100
-Ic pulse 1ms 200
Collector power dissipation Pc 1 device 335 W
Brake
Collector-Emitter voltage VCES 600 V
Gate-Emitter voltage VGES ±20 V
Collector current ICContinuous Tc=80°C 50 A
ICP 1ms Tc=80°C 100
Collector power dissipation PC1 device 215 W
Repetitive peak reverse voltage (Diode) VRRM 600 V
Converter
Repetitive peak reverse voltage VRRM 800 V
Average output current IO50Hz/60Hz, sine wave 100 A
Surge current (Non-Repetitive) IFSM 10ms, Tj=150°C
half sine wave
700 A
I2t (Non-Repetitive) I2t 2450 A2s
Junction temperature Tj Inverter, Brake 175
°C
Converter 150
Operating junciton temperature
(under switching conditions) Tjop Inverter, Brake 150
Converter 150
Case temperature Tc 125
Storage temperature Tstg -40~+125
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso AC : 1min. 2500 VAC
Screw torque Mounting (*3) - M5 3.5 N m
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IGBT Modules
Electrical characteristics (at Tj= 25°C unless otherwise specied)
Items Symbols Conditions Characteristics Units
min. typ. max.
Inverter
Zero gate voltage collector current ICES VGE = 0V, VCE = 600V - - 1.0 mA
Gate-Emitter leakage current IGES VGE = 0V, VGE = ±20V - - 200 nA
Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 100mA 6.2 6.7 7.2 V
Collector-Emitter saturation voltage
VCE (sat)
(terminal)
VGE = 15V
IC = 100A
Tj=25°C - 2.10 2.55
V
Tj=125°C - 2.40 -
Tj=150°C - 2.50 -
VCE (sat)
(chip)
VGE = 15V
IC = 100A
Tj=25°C - 1.60 2.05
Tj=125°C - 1.90 -
Tj=150°C - 2.00 -
Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 6.4 - nF
Turn-on time
ton
VCC = 300V
IC = 100A
VGE = +15 / -15V
RG = 13Ω
- 0.36 1.20
µs
tr - 0.25 0.60
tr (i) - 0.07 -
Turn-off time toff - 0.52 1.20
tf - 0.03 0.45
Forward on voltage
VF
(terminal) IF = 100A
Tj=25°C - 2.10 2.55
V
Tj=125°C - 2.00 -
Tj=150°C - 2.00 -
VF
(chip) IF = 100A
Tj=25°C - 1.60 2.05
Tj=125°C - 1.50 -
Tj=150°C - 1.47 -
Reverse recovery time trr IF = 100A - - 0.35 µs
Brake
Zero gate voltage collector current ICES VGE = 0V
VCE = 600V - - 1.0 mA
Gate-Emitter leakage current IGES VCE = 0V
VGE = +20 / -20V - - 200 nA
Collector-Emitter saturation voltage
VCE (sat)
(terminal)
VGE = 15V
IC = 50A
Tj=25°C - 1.85 2.30
V
Tj=125°C - 2.15 -
Tj=150°C - 2.25 -
VCE (sat)
(chip)
VGE = 15V
IC = 50A
Tj=25°C - 1.60 2.05
Tj=125°C - 1.90 -
Tj=150°C - 2.00 -
Turn-on time ton VCE = 300V
IC = 50A
VGE = +15 / -15V
RG = 43Ω
- 0.36 1.20
µs
tr - 0.25 0.60
Turn-off time toff - 0.52 1.20
tf - 0.03 0.45
Reverse current IRRM VR = 600V - - 1.00 mA
Converter
Forward on voltage VFM
(chip) IF = 100A terminal - 1.75 2.20 V
chip - 1.25 -
Reverse current IRRM VR = 800V - - 1.0 mA
Thermistor
Resistance RT = 25°C - 5000 - Ω
T = 100°C 465 495 520
B value B T = 25 / 50°C 3305 3375 3450 K
Thermal resistance characteristics
Items Symbols Conditions Characteristics Units
min. typ. max.
Thermal resistance (1device) Rth(j-c)
Inverter IGBT - - 0.45
°C/W
Inverter FWD - - 0.80
Brake IGBT - - 0.71
Converter Diode - - 0.66
Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.05 -
Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.
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IGBT Modules
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7MBR100VR060-50
Characteristics (Representative)
Collector - Emitter voltage: VCE [V]
[ Inverter ]
Dynamic gate charge (typ.)
Vcc=300V， Ic=100A，Tj= 25°C
Collector - Emitter voltage: VCE [200V/div]
Gate - Emitter voltage: VGE [5V/div]
[ Inverter ]
Gate - Emitter voltage: VGE [V]
[ Inverter ]
Tj= 25oC / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector current: IC [A]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Collector current: IC [A]
Collector - Emitter voltage: VCE [V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.
)
Tj= 25oC / chip
Collector-Emitter voltage: VCE[V]
Capacitance vs. Collector-Emitter voltage (typ.)
Capacitance: Cies, Coes, Cres [nF]
Gate charge: Qg [nC]
VGE=0V, f= 1MHz, Tj= 25oC
VGE=15V / chip
Collector current: IC [A]
Collector-Emitter voltage: VCE[V]
[ Inverter ]
Tj= 150oC / chip
Collector current vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage: VCE[V]
0
50
100
150
200
012345
VGE=20V 15V
12V
10V
8
V
0
50
100
150
200
012345
15V
12V
1
0
V
8V
VGE=20V
0
50
100
150
200
0 1 2 3 4 5
Tj=125°C
Tj=25°C
0
2
4
6
8
5 10 15 20 25
Ic=200A
Ic=100A
Ic=50A
0.0
0.1
1.0
10.0
100.0
0 10 20 30
Cies
Coes
Cres
0 200 400 600 800
VGE
VCE
Tj=150°C
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IGBT Modules
[ Inverter ]
Vcc=300V, VGE=±15V, RG=13Ω, Tj= 150°C
Switching time vs. Collector current (typ.)
Collector current: IC [A]
Vcc=300V, Ic=100A, VGE=±15V, Tj= 125°C
Switching time : ton, tr, toff, tf [ nsec ]
Collector current: IC [A]
Switching loss vs. gate resistance (typ.)
Switching loss : Eon, Eoff, Err [mJ/pulse ]
Collector-Emitter voltage : VCE [V]
Vcc=300V, Ic=100A, VGE=±15V
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, RG=13Ω, Tj= 125°C
Gate resistance : RG [Ω]
Switching time : ton, tr, toff, tf [ nsec ]
[ Inverter ]
Switching time vs. gate resistance (typ.)
Switching time : ton, tr, toff, tf [ nsec ]
Switching loss : Eon, Eoff, Err [mJ/pulse ]
Collector current: IC [A]
[ Inverter ]
Vcc=300V, VGE=±15V, RG=13Ω
Switching loss vs. Collector current (typ.)
Gate resistance : RG [Ω]
[ Inverter ]
Reverse bias safe operating area (max.)
[ Inverter ]
+VGE=15V, -VGE <= 15V, RG >= 13Ω ,Tj =150°C
Collector current: IC [A]
0
100
200
300
0200 400 600 800
RBSOA
(Repetitive pulse)
10
100
1000
10000
0 100 200 300
toff
10
100
1000
10000
0 100 200 300
toff
10
100
1000
10000
1 10 100 1000
tr
tf
ton
toff
0
5
10
15
0 100 200 300
Eon(125°C)
Eon(150°C)
Eoff(125°C)
Err(125°C)
Err(150°C)
Eoff(150°C)
0
10
20
30
1 10 100 1000
Err(150°C)
ton
t
r
tf
ton
tr
tf
Err(125°C)
Eoff(150°C)
Eon(125°C)
Eon(150°C)
Eoff(125°C)
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IGBT Modules
http://www.fujielectric.com/products/semiconductor/
7MBR100VR060-50
[ Inverter ]
Vcc=300V, VGE=±15V, RG=13Ω
Reverse recovery characteristics (typ.)
Forward current : IF [A]
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
chip
Forward current : IF [A]
Forward on voltage : VF [V]
Forward current : IF [A]
Transient thermal resistance (max.)
Thermal resistanse : Rth(j-c) [ °C/W ]
Temperature [°C ]
[ Inverter ]
Forward current vs. forward on voltage (typ.)
chip
Forward on voltage : VFM [V]
[ Converter ]
Forward current vs. forward on voltage (typ.)
Pulse width : Pw [sec]
[ Thermistor ]
Temperature characteristic (typ.)
Resistance : R [kΩ]
0
50
100
150
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Tj=125°C
Tj=25°C
10
100
1000
0 100 200 300
trr(150°C)
0
50
100
150
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Tj=125°C
Tj=25°C
0.01
0.10
1.00
0.001 0.010 0.100 1.000
FWD[Inverter]
IGBT[Inverter]
Conv. Diode
IGBT[Brake]
0.1
1
10
100
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Tj=150°C
Irr(125°C)
Irr(150°C)
trr(125°C)
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IGBT Modules
[ Brake ]
Tj= 150oC / chip
Collector current vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage: VCE[V]
VGE=15V / chip
Collector current: IC [A]
Collector-Emitter voltage: VCE[V]
Capacitance vs. Collector-Emitter voltage (typ.)
Capacitance: Cies, Coes, Cres [nF]
Gate charge: Qg [nC]
VGE=0V, f= 1MHz, Tj= 25°C
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.
)
Tj= 25oC / chip
Collector-Emitter voltage: VCE[V]
Collector current: IC [A]
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Collector current: IC [A]
Collector - Emitter voltage: VCE [V]
Gate - Emitter voltage: VGE [V]
[ Brake ]
Tj= 25oC / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector - Emitter voltage: VCE [V]
[ Brake ]
Dynamic gate charge (typ.)
Vcc=300V, Ic=50A, Tj= 25°C
Collector - Emitter voltage: VCE [200V/div]
Gate - Emitter voltage: VGE [5V/div]
[ Brake ]
0
25
50
75
100
012345
VGE=20V 15V 12V
10V
8V
0
25
50
75
100
012345
15V
12V
1
0
V
8V
VGE=20V
0
25
50
75
100
0 1 2 3 4 5
Tj=125°C
Tj=25°C
0
2
4
6
8
5 10 15 20 25
Ic=100A
Ic=50A
Ic=25A
0.1
1.0
10.0
0 10 20 30
Cies
Coes
Cres
0 100 200 300 400
VGE
VCE
Tj=150°C
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IGBT Modules
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7MBR100VR060-50
Outline Drawings, mm
[ Thermistor ] 　 　[ Converter ]　　　　[ Brake]　　　 　[ Inverter ]
Section A-A
shows theoretical dimension.
( ) shows reference dimension.
Equivalent Circuit Schematic
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IGBT Modules
WARNING
1. This Catalog contains the product specications, characteristics, data, materials, and structures as of May 2011.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.
3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, re, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, ame retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.
• Transportation equipment (mounted on cars and ships) • Trunk communications equipment
• Trafc-signal control equipment • Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
• Medical equipment
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment
(without limitation).
• Space equipment • Aeronautic equipment • Nuclear control equipment
• Submarine repeater equipment
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No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
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Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.