ROITHNER LASERTECHNIKROITHNER LASERTECHNIK
A-1040 WIEN, FLEISCHMANNGASSE 9
TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43
e-mail: office@roithner-laser.com http://www.roithner-laser.com
RLT67100G TECHNICAL DATA
High Power Visible Wavelength Laserdiode
Structure: InGaAlP/GaAs, Aperture: 1 x 30 µm
Lasing wavelength: 675 nm, multimode
Max. optical power: 110 mW
Package: 9 mm
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
Absolute Maximum Ratings (Tc=25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Optical Output Power Po110 mW
LD Reverse Voltage VR(LD) 0.5 V
PD Reverse Voltage VR(PD) 5V
Operation Case Temperature TC-20 .. +40 °C
Storage Temperature TSTG -60 .. +70 °C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX UNIT
Optical Output Power Pokink free 100 mW
Threshold Current Ith cw 100 110 130 mA
Operation Current Iop Po = 100 mW 230 250 mA
Operating Voltage Vop Po = 100 mW 2.3 2.4 V
Lasing Wavelength λpPo = 100 mW 660 675 695 nm
Beam Divergence θ// P
o
= 100 mW 6 10 16 °
Beam Divergence θ⊥Po = 100 mW 30 °
Monitor Current ImPo = 100 mW 300 400 600 µA
NOTE!
LASERDIODE
MUST BE COOLED!
