ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT67100G TECHNICAL DATA High Power Visible Wavelength Laserdiode NOTE! Structure: InGaAlP/GaAs, Aperture: 1 x 30 m Lasing wavelength: 675 nm, multimode Max. optical power: 110 mW Package: 9 mm LASERDIODE MUST BE COOLED! PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode Absolute Maximum Ratings (Tc=25C) CHARACTERISTIC SYMBOL Optical Output Power Po LD Reverse Voltage VR(LD) PD Reverse Voltage VR(PD) Operation Case Temperature TC Storage Temperature TSTG RATING 110 0.5 5 -20 .. +40 -60 .. +70 Optical-Electrical Characteristics (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION Optical Output Power Po kink free Threshold Current Ith cw Operation Current Iop Po = 100 mW Operating Voltage Vop Po = 100 mW Lasing Wavelength Po = 100 mW p Beam Divergence Po = 100 mW // Beam Divergence Po = 100 mW Monitor Current Im Po = 100 mW MIN 100 660 6 300 UNIT mW V V C C TYP 100 110 230 2.3 675 10 30 400 MAX 130 250 2.4 695 16 600 UNIT mW mA mA V nm A