Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
BIPOLAR ANALOG INTEGRATED CIRCUIT
PC3232TB
5 V, SILICON GERMANIUM MMIC
MEDIUM OUTPUT POWER AMPLIFIER
Document No. PU10597EJ01V0DS (1st edition)
Date Published May 2006 NS CP(K)
DESCRIPTION
The
PC3232TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS
tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
FEATURES
• Low current : ICC = 26.0 mA TYP.
• Medium output power : PO (sat) = +15.5 dBm TYP. @ f = 1.0 GHz
: PO (sat) = +12.0 dBm TYP. @ f = 2.2 GHz
• High linearity : PO (1 dB) = +11.0 dBm TYP. @ f = 1.0 GHz
: PO (1 dB) = +8.5 dBm TYP. @ f = 2.2 GHz
• Power gain : GP = 32.8 dB MIN. @ f = 1.0 GHz
: GP = 33.5 dB MIN. @ f = 2.2 GHz
• Gain flatness :
GP = 1.0 dB TYP. @ f = 1.0 to 2.2 GHz
• Noise figure : NF = 4 dB TYP. @ f = 1.0 GHz
: NF = 4.1 dB TYP. @ f = 2.2 GHz
• Supply voltage : VCC = 4.5 to 5.5 V
• Port impedance : input/output 50
APPLICATIONS
• IF amplifiers in LNB for DBS converters etc.
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
Supplying Form
PC3232TB-E3
PC3232TB-E3-A
6-pin super minimold
(Pb-Free)
C3S
Embossed tape 8 mm wide
Pin 1, 2, 3 face the perforation side of the tape
Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office
Part number for sample order:
PC3232TB-A
Data Sheet PU10597EJ01V0DS
2
PIN CONNECTIONS
Pin No.
Pin Name
1
OUTPUT
2
GND
3
VCC
4
INPUT
5
GND
6
GND
PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
(TA = +25°C, f = 1 GHz, VCC = Vout = 5.0 V, ZS = ZL = 50 )
Part No.
PO (sat)
(dBm)
GP
(dB)
NF
(dB)
ICC
(mA)
Package
Marking
PC2708TB
+10.0
15.0
6.5
26
6-pin super minimold
C1D
PC2709TB
+11.5
23.0
5.0
25
C1E
PC2710TB
+13.5
33.0
3.5
22
C1F
PC2776TB
+8.5
23.0
6.0
25
C2L
PC3223TB
+12.0
23.0
4.5
19
C3J
PC3225TB
+15.5 Note
32.5 Note
3.7 Note
24.5
C3M
PC3226TB
+13.0
25.0
5.3
15.5
C3N
PC3232TB
+15.5
32.8
4.0
26
C3S
Note
PC3225TB is f = 0.95 GHz
Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
Data Sheet PU10597EJ01V0DS
3
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Ratings
Unit
Supply Voltage
VCC
TA = +25°C
6.0
V
Total Circuit Current
ICC
TA = +25°C
45
mA
Power Dissipation
PD
TA = +85C Note
270
mW
Operating Ambient Temperature
TA
40 to +85
°C
Storage Temperature
Tstg
55 to +150
°C
Input Power
Pin
TA = +25°C
0
dBm
Note Mounted on double-sided copper-clad 50 50 1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Supply Voltage
VCC
4.5
5.0
5.5
V
Operating Ambient Temperature
TA
40
+25
+85
°C
Data Sheet PU10597EJ01V0DS
4
ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 )
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Circuit Current
ICC
No input signal
20
26
32
mA
Power Gain 1
GP1
f = 0.25 GHz, Pin = 35 dBm
29
31.5
34
dB
Power Gain 2
GP2
f = 1.0 GHz, Pin = 35 dBm
30
32.8
35.5
Power Gain 3
GP3
f = 1.8 GHz, Pin = 35 dBm
31
33.8
37
Power Gain 4
GP4
f = 2.2 GHz, Pin = 35 dBm
30.5
33.5
36.5
Power Gain 5
GP5
f = 2.6 GHz, Pin = 35 dBm
29
32.2
35.5
Power Gain 6
GP6
f = 3.0 GHz, Pin = 35 dBm
27
30.7
34
Gain Flatness
GP
f = 1.0 to 2.2 GHz, Pin = 35 dBm
1.0
dB
K factor 1
K1
f = 1.0 GHz, Pin = 35 dBm
1.3
K factor 2
K2
f = 2.2 GHz, Pin = 35 dBm
1.9
Saturated Output Power 1
PO (sat) 1
f = 1.0 GHz, Pin = 0 dBm
+13
+15.5
dBm
Saturated Output Power 2
PO (sat) 2
f = 2.2 GHz, Pin = 5 dBm
+9.5
+12
Gain 1 dB Compression Output Power
1
PO (1 dB) 1
f = 1.0 GHz
+8
+11
dBm
Gain 1 dB Compression Output Power
2
PO (1 dB) 2
f = 2.2 GHz
+6
+8.5
Noise Figure 1
NF1
f = 1.0 GHz
4
4.8
dB
Noise Figure 2
NF2
f = 2.2 GHz
4.1
4.9
Isolation 1
ISL1
f = 1.0 GHz, Pin = 35 dBm
36
41
dB
Isolation 2
ISL2
f = 2.2 GHz, Pin = 35 dBm
38
45
Input Return Loss 1
RLin1
f = 1.0 GHz, Pin = 35 dBm
9.5
13
dB
Input Return Loss 2
RLin2
f = 2.2 GHz, Pin = 35 dBm
10
14.5
Output Return Loss 1
RLout1
f = 1.0 GHz, Pin = 35 dBm
12
15.5
dB
Output Return Loss 2
RLout2
f = 2.2 GHz, Pin = 35 dBm
12
15
Input 3rd Order Distortion Intercept Point 1
IIP31
f1 = 1 000 MHz, f2 = 1 001 MHz
9
dBm
Input 3rd Order Distortion Intercept Point 2
IIP32
f1 = 2 200 MHz, f2 = 2 201 MHz
15.5
Output 3rd Order Distortion Intercept Point
1
OIP31
f1 = 1 000 MHz, f2 = 1 001 MHz
+23.5
dBm
Output 3rd Order Distortion Intercept Point
2
OIP32
f1 = 2 200 MHz, f2 = 2 201 MHz
+18
2nd Order Intermodulation Distortion
IM2
f1 = 1 000 MHz, f2 = 1 001 MHz,
Pout = 5 dBm/tone
50
dBc
2nd Harmonic
2f0
f0 = 1.0 GHz, Pout = 15 dBm
70
dBc
Data Sheet PU10597EJ01V0DS
5
TEST CIRCUIT
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
COMPONENTS OF TEST CIRCUIT FOR MEASURING
ELECTRICAL CHARACTERISTICS
Type
Value
R1
Chip Resistance
560
L1
Chip Inductor
47 nH
L2
Chip Inductor
68 nH
C1
Chip Capacitor
100 pF
C2
Chip Capacitor
33 pF
C3, C4
Chip Capacitor
1 000 pF
C5
Chip Capacitor
39 pF
C6
Feed-through Capacitor
1 000 pF
INDUCTOR FOR THE OUTPUT PIN
The internal output transistor of this IC, to output medium power. To supply current for output transistor, connect
an inductor between the VCC pin (pin 3) and output pin (pin 1). Select inductance, as the value listed above.
The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum
voltage drop to output enable high level. In terms of AC, the inductor makes output-port impedance higher to get
enough gain. In this case, large inductance and Q is suitable (Refer to the following page).
CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS
Capacitors of 1 000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors
for the input and output pins.
The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias
can be supplied against VCC fluctuation.
The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial
impedance. Their capacitances are therefore selected as lower impedance against a 50 load. The capacitors
thus perform as high pass filters, suppressing low frequencies to DC.
To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under
10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are
determined by equation, C = 1/(2 Rfc).
Data Sheet PU10597EJ01V0DS
6
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
Notes
1. 19 21.46 0.51 mm double sided copper clad RO4003C
(Rogers) board.
2. Back side: GND pattern
3. Au plated on pattern
4. : Through holes
5. L1, L2: FDK’s products
COMPONENT LIST
Value
Size
R1
560
1005
L1
47 nH
1005
L2
68 nH
1005
C1
100 pF
1608
C2
33 pF
1608
C3, C4
1 000 pF
1005
C5
39 pF
1608
C6
1 000 pF
Feed-through
Capacitor
Data Sheet PU10597EJ01V0DS
7
TYPICAL CHARACTERISTICS (TA = +25C, VCC = 5.0 V, ZS = ZL = 50 , unless otherwise specified)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10597EJ01V0DS
8
Remark The graphs indicate nominal characteristics.
Data Sheet PU10597EJ01V0DS
9
Remark The graphs indicate nominal characteristics.
Data Sheet PU10597EJ01V0DS
10
S-PARAMETERS (TA = +25C, VDD = VCC = 5.0 V, Pin = 35 dBm)
S11FREQUENCY
S22FREQUENCY
Data Sheet PU10597EJ01V0DS
11
S-PARAMETERS
Data Sheet PU10597EJ01V0DS
12
PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
Data Sheet PU10597EJ01V0DS 13
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground terminals must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to the VCC line.
(4) The inductor (L) must be attached between VCC and output pins. The inductance value should be determined in
accordance with desired frequency.
(5) The DC cut capacitor must be attached to input and output pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature) : 260C or below
Time at peak temperature : 10 seconds or less
Time at temperature of 220C or higher : 60 seconds or less
Preheating time at 120 to 180C : 12030 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
IR260
Wave Soldering
Peak temperature (molten solder temperature) : 260C or below
Time at peak temperature : 10 seconds or less
Preheating temperature (package surface temperature) : 120C or below
Maximum number of flow processes : 1 time
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
WS260
Partial Heating
Peak temperature (terminal temperature) : 350C or below
Soldering time (per side of device) : 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).