Data Sheet 1 of 11 Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Description
The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs
designed for ultra-linear CDMA power amplifier applications.
They are available in thermally-enhanced ceramic open-cavity
packages . Manufactured with Infineon's advanced LDMOS process,
these devices provide excellent thermal performance and superior
reliability.
PTFA041501E
Package H-36248-2
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 420 – 500 MHz
RF Characteristics
Single-carrier CDMA IS-95 Measurements (not subject to production test—verified by design/characterization in
Infineon test fixture)
VDD = 28 V, IDQ = 900 mA, POUT = 60 W average, ƒ = 470 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps —21 —dB
Drain Efficiency ηD—41 —%
Adjacent Channel Power Ratio ACPR —–33 —dB
PTFA041501F
Package H-37248-2
Features
•Broadband internal matching
•Typical CDMA performance at 470 MHz, 28 V
- Average output power = 60 W
- Linear Gain = 21 dB
- Efficiency = 41%
•Typical CW performance, 470 MHz, 28 V
- Output power at P–1dB = 175 W
- Efficiency = 62%
•Integrated ESD protection: Human Body Model,
Class 1 (minimum)
•Excellent thermal stability
•Low HCI drift
•Capable of handling 10:1 VSWR @ 28 V,
150 W (CW) output power
•Pb-free and RoHS-compliant
Single-carrier CDMA IS-95 Performance
VDD = 28 V, IDQ = 900 mA, ƒ = 470 MHz
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
36 38 40 42 44 46 48
Average Output Power (dBm)
0
5
10
15
20
25
30
35
40
45
Drain Efficiency (%)
Adjacent Channel Power Ratio (dB)
Efficiency
ACPR
–15°C
25°C
90°C
ALT
*See Infineon distributor for future availability.
Data Sheet 2 of 11 Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 900 mA, POUT = 150 W PEP, ƒ = 470 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 20.0 21.0 —dB
Drain Efficiency ηD45.0 46.5 —%
Intermodulation Distortion IMD —–29 –28 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.07 —Ω
Operating Gate Voltage VDS = 28 V, IDQ = 900 mA VGS 22.48 3V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 150 W CW) RθJC 0.42 °C/W
*See Infineon distributor for future availability.
Ordering Information
Type and Version Package Type Package Description Shipping
PTFA041501E V4 H-36248-2 Thermally-enhanced slotted flange, single-ended Tray
PTFA041501E V4 R250 H-36248-2 Thermally-enhanced slotted flange, single-ended Tape & Reel, 250 pcs
PTFA041501F V4 H-37248-2 Thermally-enhanced earless flange, single-ended Tray
PTFA041501F V4 R250 H-37248-2 Thermally-enhanced earless flange, single-ended Tape & Reel, 250 pcs
Data Sheet 3 of 11 Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
Power Sweep at selected IDQ
VDD = 28 V, ƒ = 470 MHz
17.0
17.5
18.0
18.5
19.0
19.5
20.0
20.5
21.0
21.5
22.0
39 41 43 45 47 49 51 53 55
Output Power (dBm)
Gain (dB)
IDQ = 1125 mA
IDQ = 900 mA
IDQ
= 675 mA
Broadband Circuit Performance
VDD = 28 V, IDQ = 900 mA, POUT = 80 W
15
20
25
30
35
40
45
50
460 462 464 466 468 470
Frequency (MHz)
Gain (dB), Efficiency (%)
-20
-19
-18
-17
-16
-15
-14
-13
Input Return Loss (dB)
Gain
Efficiency
Return Loss
Typical Performance (data taken in a production test fixture)
Power Sweep, CW Conditions
VDD = 28 V, IDQ = 900 mA, ƒ = 470 MHz
15
16
17
18
19
20
21
22
39 41 43 45 47 49 51 53 55
Output Power (dBm)
Gain (dB)
10
20
30
40
50
60
70
80
Drain Efficiency (%)
Gain
Efficiency
TCASE = 25°C
TCASE = 90°C
POUT, Gain & Efficiency (at P-1dB) vs. Frequency
VDD = 28 V, IDQ = 900 mA
15
20
25
30
35
40
45
50
55
60
65
460 462 464 466 468 470
Frequency (MHz)
19.9
20
20.1
20.2
20.3
20.4
20.5
20.6
20.7
20.8
20.9
Gain (dB)
Gain
Efficiency
Output Power
Efficiency (%), Output Power (dBm)
Data Sheet 4 of 11 Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
Output Power (at 1 dB compression)
vs. Supply Voltage
IDQ = 900 mA, ƒ = 470 MHz
50
51
52
53
54
55
24 26 28 30 32
Supply Voltage (V)
Output Power (dBm)
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
VDD = 28 V, IDQ = 900 mA,
ƒ1 = 469 MHz, ƒ2 = 470 MHz
-70
-60
-50
-40
-30
-20
-10
0
36 38 40 42 44 46 48 50
Output Power (dBm), avg.
10
15
20
25
30
35
40
45
50
Drain Efficiency (%)
IM5
IM7
Intermodulation Distortion (dBc)
IM3
Efficiency
IM3 vs. Output Power at Selected Biases
VDD = 28 V , ƒ1 = 469 MHz, ƒ2 = 470 MHz
-43
-41
-39
-37
-35
-33
-31
-29
-27
-25
36 38 40 42 44 46 48 50
Output Power (dBm)
IMD (dBc)
675 mA
900 mA
1125 mA
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 0 20 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
0.29 A
0.88 A
1.47 A
2.20 A
4.41 A
6.61 A
8.81 A
11.02 A
Data Sheet 5 of 11 Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Z Source Z Load
G
S
D
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
450 0.88 –3.20 1.33 0.22
455 0.84 –3.20 1.35 0.31
460 0.84 –3.10 1.40 0.38
465 0.84 –3.00 1.41 0.47
470 0.83 –2.90 1.44 0.57
0.1
0.2
0.1
0.1
-
W
V
E
L
E
N
G
T
H
S
T
O
W
AR
D
G
<-
--
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
450 MHz
470 MHz
Z Load
Z Source
450 MHz
470 MHz
See next page for circuit information
Z0 = 50 Ω
Data Sheet 6 of 11 Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
Reference circuit schematic for ƒ = 460 MHz
Circuit Assembly Information
DUT PTFA041501E or PTFA041501F LDMOS Transistor
PCB LTN/PTFA041501EF 0.76 mm [.030"] thick, εr = 9.2 Rogers TMM10 2 oz. copper
Microstrip Electrical Characteristics at 460 MHz1Dimensions L x W (mm) Dimensions L x W (in.)
l 1 0.016 λ, 50.69 Ω 4.32 x 0.71 0.170 x 0.028
l 2 0.058 λ, 24.34 Ω 14.22 x 2.54 0.560 x 0.100
l 3 0.097 λ, 4.85 Ω 21.59 x 17.78 0.850 x 0.700
l 4 0.081 λ, 50.69 Ω 21.59 x 0.71 0.850 x 0.280
l 5 0.040 λ, 4.85 Ω 8.89 x 17.78 0.350 x 0.700
l 6 0.158 λ, 37.73 Ω 40.64 x 1.27 1.600 x 0.050
l 7 0.030 λ, 10.94 Ω 5.59 x 7.11 0.220 x 0.280
l 8 0.158 λ, 37.73 Ω 40.64 x 1.27 1.600 x 0.050
l 9 0.030 λ, 10.94 Ω 5.59 x 7.11 0.220 x 0.280
l 10 0.025 λ, 5.58 Ω 5.59 x 15.24 0.220 x 0.600
l 11 0.105 λ, 5.58 Ω23.62 x 15.24 0.930 x 0.600
l 12 0.006 λ, 5.58 Ω1.27 x 15.24 0.050 x 0.600
l 13 0.104 λ, 21.37 Ω25.4 x 3.05 1.000 x 0.120
l 14 0.014 λ, 50.69 Ω3.81 x 0.71 0.150 x 0.028
Reference Circuit
J2
VDD
L1
R2
1.3K V
R6
1.2K V
R3
2K V
R4
2K V
R5
3.3K V
l1
l6
l8
DUT
J1
l4
l2
C4
10µF
35V
l3l5
l7
l9
l10 l11 l12 l13 l14
C5
0.1µF
R7
5.1K V
C6
120pF
C11
1µF
C12
10µF
50V
C13
0.1µF
50V
C10
100pF
C14
10µF
50V
R6
10 V
C7
100pF
C8
11pF
C9
4.3pF
C20
5.6pF
C22
11pF
C21
5.1pF
C23
11pF
C25
100pF
C24
8.2pF
L2
C16
1µF
C17
10µF
50V
C18
0.1µF
50V
C15
100pF
C19
10µF
50V
C3
0.001µF
C2
0.001µF
Q1
BCP56
QQ1
LM7805
C1
0.001µF
VDD
V66000-G9267-D631-01-7606.dwg
Data Sheet 7 of 11 Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
R4
Q1
QQ1
C3
C1
R1
C2
R2
R6 R7
R5
R3
GND VDD
C4
R6 R7
C5
C9
C8
C7
C11 C13
C6
C16
C15
C10
C22
C20
C21 C23
C24 C25
C18
C14
C12
C17 C19
041501in_03 041501out_03
L2
L1
RF IN RF OUT
V66100-G9267-D631-01-7631.dwg
Reference Circuit (cont.)
Reference circuit assembly diagram (not to scale). Gerber files for this circuit available on request.
R6 R7
C5
C4 C3
C2
R1
R6 R7
R3
R2
Q1
C8
R5 R4 C1
QQ1
Data Sheet 8 of 11 Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4 Tantalum capacitor, 10 µF, 35 V Digi-Key PCS6106TR-ND
C5, C13, C18 Capacitor, 0.1 µF Digi-Key P4525-ND
C6 Ceramic capacitor, 120 pF ATC 100B 121
C7, C10, C15, C25 Ceramic capacitor, 100 pF ATC 100B 101
C8, C22, C23 Ceramic capacitor, 11 pF ATC 100B 110
C9 Ceramic capacitor, 4.3 pF ATC 100B 4R3
C11, C16 Capacitor, 1.0 µF ATC 920C105
C12, C14, C17, C19 Capacitor, 10 µF, 50 VGarrett Electronics TPS106K050R0400
C20 Ceramic capacitor, 5.6 pF ATC 100B 5R6
C21 Ceramic capacitor, 5.1 pF ATC 100B 5R1
C24 Ceramic capacitor, 8.2 pF ATC 100B 8R2
L1, L2 Ferrite, 6 mm Ferroxcube 53/3/4.6-452
Q1 Transistor Infineon Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip resistor, 1.2k ohms Digi-Key P1.2KGCT-ND
R2 Chip resistor, 1.3k ohms Digi-Key P1.3KGCT-ND
R3 Chip resistor, 2k ohms Digi-Key P2.0KECT-ND
R4 Potentiometer, 2k ohms Digi-Key 3224W-202ETR-ND
R5 Chip resistor, 3.3k ohms Digi-Key P3.3KECT-ND
R6 Chip resistor, 10 ohms Digi-Key P10ECT-ND
R7 Chip resistor, 5.1k ohms Digi-Key P5.1KECT-ND
Data Sheet 9 of 11 Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-36248-2
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.102 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]
C
L
34.04
[1.340]
19.81±0.20
[.780±.008]
1.02
[.040]
19.43 ±0.51
[.765±.020]
(45° X 2.72
[.107])
2X 12.70
[.500]
4.83±0.51
[.190±.020]
27.94
[1.100]
4X R1.52
[R.060]
2X R1.63
[R.064]
D
G
S
FLANGE 9.78
[.385]
0.0381 [.0015] -A-
071117_h-36248-2_po
C
L
C
L
3.61±0.38
[.142±.015]
SPH 1.57
[.062]
[.370 ]
+.004
–.006
LID 9.40 +0.10
–0.15
Data Sheet 10 of 11 Rev. 01.1, 2010-01-20
PTFA041501E
PTFA041501F
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.)
Package H-37248-2
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.102 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
C
L
0.0381 [.0015]
2X 12.70
[.500]
19.43±0.51
[.765±.020]
19.81±0.20
[.780±.008]
SPH 1.57
[.062]
FLANGE 9.78
[.385]
S
G
D
( 45° X 2.72
[.107])
20.57
[.810]
-A-
3.61±0.38
[.142±.015]
1.02
[.040]
4.83±0.51
[.190±.020]
C
L
C
L
[R.020 ]
+.015
–.005
4X R0.508+0.381
–0.127
LID 9.40+0.10
–0.15
[.370 ]
+.004
–.006
071117_h-37248-2_po
Data Sheet 11 of 11 Rev. 01.1, 2010-01-20
PTFA041501EF V4
Confidential, Limited Internal Distribution
Revision History: 2010-01-20 Data Sheet
Previous Version: none
Page Subjects (major changes since last revision)
6, 9, 10 Minor cosmetic changes only
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2010-01-20
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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