MRF8P20160HR3 MRF8P20160HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1880 to
2025 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
!Typical Doherty Single--Carrier W--CDMA Performance: VDD =28Volts,
IDQA = 550 mA, VGSB =1.6Vdc,P
out = 37 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
Frequency
Gps
(dB)
"D
(%)
Output PAR
(dB)
ACPR
(dBc)
1880 MHz 16.5 44.8 7.0 --29.8
1900 MHz 16.6 45.3 6.9 --30.1
1920 MHz 16.5 45.8 6.9 --30.6
!Capable of Handling 10:1 VSWR, @ 32 Vdc, 1900 MHz, 150 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
!Typical Pout @ 3 dB Compression Point ≃160 Watts CW
2025 MHz
!Typical Doherty Single--Carrier W--CDMA Performance: VDD =28Volts,
IDQA = 550 mA, VGSB =1.6Vdc,P
out = 37 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
Frequency
Gps
(dB)
"D
(%)
Output PAR
(dB)
ACPR
(dBc)
2025 MHz 15.3 44.0 6.8 --30.0
Features
!Production Tested in a Symmetrical Doherty Configuration
!100% PAR Tested for Guaranteed Output Power Capability
!Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
!Internally Matched for Ease of Use
!Integrated ESD Protection
!Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
!Designed for Digital Predistortion Error Correction Systems
!RoHS Compliant
!NI--780--4 in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +65 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg -- 65 to +150 #C
Case Operating Temperature TC150 #C
Operating Junction Temperature (1,2) TJ225 #C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
1880--2025 MHz, 37 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8P20160HR3
MRF8P20160HSR3
(Top View)
RFoutA/VDSA
31
Figure 1. Pin Connections
42
RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P20160HSR3
CASE 465M--01, STYLE 1
N I -- 7 8 0 -- 4
MRF8P20160HR3
Document Number: MRF8P2160H
Rev. 1, 7/2010
Freescale Semiconductor
Technical Data
$Freescale Semiconductor, Inc., 2010.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF8P20160HR3 MRF8P20160HSR3
Table 2. Thermal Characteristics
Characteristic Symbol Value (1,2) Unit
Thermal Resistance, Junction to Case
Case Temperature 81#C, 37 W CW, 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc, 1900 MHz R%JC 0.75 #C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2 (Minimum)
Machine Model (per EIA/JESD22--A115) A (Minimum)
Charge Device Model (per JESD22--C101) IV (Minimum)
Table 4. Electrical Characteristics (TA=25#C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (3)
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 &Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 &Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 &Adc
On Characteristics (3)
Gate Threshold Voltage
(VDS =10Vdc,I
D=116&Adc)
VGS(th) 1.2 1.8 2.7 Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
DA = 550 mAdc, Measured in Functional Test)
VGS(Q) 1.9 2.7 3.4 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=1.5Adc)
VDS(on) 0.1 0.27 0.5 Vdc
Functional Tests (4,5) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 550 mA, VGSB =1.6Vdc,P
out =37WAvg.,
f = 1920 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ '5MHzOffset.
Power Gain Gps 15.5 16.5 18.5 dB
Drain Efficiency "D43.5 45.8 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 6.4 6.9 —dB
Adjacent Channel Power Ratio ACPR —--30.6 --28.5 dBc
Typical Broadband Performance (5) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 550 mA, VGSB =1.6Vdc,
Pout = 37 W Avg., f = 1920 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ '5MHzOffset.
Frequency
Gps
(dB)
"D
(%)
Output PAR
(dB)
ACPR
(dBc)
1880 MHz 16.5 44.8 7.0 --29.8
1900 MHz 16.6 45.3 6.9 --30.1
1920 MHz 16.5 45.8 6.9 --30.6
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Each side of device measured separately.
4. Part internally matched both on input and output.
5. Measurement made with device in a Symmetrical Doherty configuration. (continued)
MRF8P20160HR3 MRF8P20160HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA=25#C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performance (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 550 mA, VGSB =1.6Vdc,
1880--1920 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —107 — W
Pout @ 3 dB Compression Point, CW P3dB —160 — W
IMD Symmetry @ 40 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—13 —
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —50 —MHz
Gain Flatness in 40 MHz Bandwidth @ Pout =37WAvg. GF—0.2 —dB
Gain Variation over Temperature
(--30#Cto+85#C)
(G — 0.01 —dB/#C
Output Power Variation over Temperature
(--30#Cto+85#C)
(P1dB —0.009 —dB/#C
Typical Broadband Performance — 2025 MHz (1) (In Freescale 2025 Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 550 mA,
VGSB =1.6Vdc,P
out = 37 W Avg., f = 2025 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ '5MHzOffset.
Frequency
Gps
(dB)
"D
(%)
Output PAR
(dB)
ACPR
(dBc)
2025 MHz 15.3 44.0 6.8 -- 3 0 . 0
1. Measurement made with device in a Symmetrical Doherty configuration.
4
RF Device Data
Freescale Semiconductor
MRF8P20160HR3 MRF8P20160HSR3
Figure 2. MRF8P20160HR3(HSR3) Test Circuit Component Layout
MRF8P20160H
Rev. 1
C10
VGA
C8
R2 C6
C5
C3
C1 C2
C4
R1
Z1
VGB
C11
C9
R3 C7
C21 C23
VDB
C25
C19
C17
C13
C15
C14
C12
C16
C26
VDA
C20 C22
C24
C18
CUT OUT AREA
C
P
Table 5. MRF8P20160HR3(HSR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C2, C12, C13 10 pF Chip Capacitors ATC600F100JT250XT ATC
C3 0.3 pF Chip Capacitor ATC600F0R3BT250XT ATC
C4, C5 1.1 pF Chip Capacitors ATC600F1R1BT250XT ATC
C6, C7, C18, C19 12 pF Chip Capacitors ATC600F120JT250XT ATC
C8, C9, C20, C21, C22, C23 10 &F, 50 V Chip Capacitors GRM55DR61H106KA88L Murata
C10, C11 22 &F, 35 V Tantalum Capacitors T491X226K035AT Kemet
C14, C15 2.0 pF Chip Capacitors ATC600F2R0BT250XT ATC
C16, C17 2.2 pF Chip Capacitors ATC600F2R2BT250XT ATC
C24, C25 220 &F, 50 V Electrolytic Capacitors 227CKS505M Illinois Cap
C26 0.8 pF Chip Capacitor ATC600F0R8BT250XT ATC
R1 50 ), 4 W Chip Resistor CW12010T0050GBK ATC
R2, R3 8.25 ), 1/4 W Chip Resistors CRCW12068R25FKEA Vishay
Z1 1900 MHz Band 90#, 3 dB Chip Hybrid Coupler GCS351--HYB1900 Soshin
PCB 0.020*,+r=3.5 RO4350B Rogers
MRF8P20160HR3 MRF8P20160HSR3
5
RF Device Data
Freescale Semiconductor
4
,
2
,
2
,
4
,
2
,
2
,
Single--ended
Quadrature combined
Doherty
Push--pull
4
,
4
,
4
,
4
,
Figure 3. Possible Circuit Topologies
6
RF Device Data
Freescale Semiconductor
MRF8P20160HR3 MRF8P20160HSR3
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
1850
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 37 Watts Avg.
-- 2 2
-- 1 0
-- 1 3
-- 1 6
-- 1 9
13
18
17.5
17
-- 3 3
49
48
47
46
-- 2 8
-- 2 9
-- 3 0
-- 3 1
"D, DRAIN
EFFICIENCY (%)
"D
Gps, POWER GAIN (dB)
16.5
16
15.5
15
14.5
14
13.5
1875 1900 1925 1950 1975 2000 2025 2050
45
-- 3 2
-- 2 5
PARC
PARC (dB)
-- 4 . 5
-- 2 . 5
-- 3
-- 3 . 5
-- 4
-- 5
ACPR (dBc)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 7 0
-- 2 0
-- 3 0
-- 4 0
-- 6 0
1 100
IMD, INTERMODULATION DISTORTION (dBc)
-- 5 0
IM3--U
IM3--L
IM7--U
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
0
Pout, OUTPUT POWER (WATTS)
-- 2
-- 4
-- 6
20
-- 1
-- 3
-- 5
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
040 60 100
0
60
50
40
30
20
10
"D-DRAIN EFFICIENCY (%)
-- 1 d B = 1 6 W
-- 3 d B = 3 6 W
80
"D
ACPR
PARC
ACPR (dBc)
-- 6 0
0
-- 1 0
-- 2 0
-- 4 0
-- 3 0
-- 5 0
18
Gps, POWER GAIN (dB)
17
16
15
14
13
12
Gps
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
VDD =28Vdc,P
out =37W(Avg.),I
DQA = 550 mA
VGSB = 1.6 Vdc, Single--Carrier W--CDMA
IM7--L
IM5--U
IM5--L
VDD =28Vdc,P
out = 40 W (PEP)
IDQA = 550 mA, VGSB = 1.6 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1900 MHz
VDD =28Vdc,I
DQA = 550 mA
VGSB = 1.6 Vdc, f = 1900 MHz
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
-- 2 d B = 2 6 W
MRF8P20160HR3 MRF8P20160HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
1
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
-- 2 0
12
18
0
60
50
40
30
20
"D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
17
16
10 300
10
-- 6 0
ACPR (dBc)
15
14
13
0
-- 3 0
-- 4 0
-- 5 0
Figure 8. Broadband Frequency Response
0
18
1660
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQA = 550 mA
VGSB =1.6Vdc
12
9
6
1720
GAIN (dB)
15 Gain
1780 1840 1900 1960 2020 2080 2140
IRL
-- 4 2
0
-- 7
-- 1 4
-- 2 1
-- 2 8
IRL (dB)
3--35
1920 MHz
VDD =28Vdc,I
DQA = 550 mA, VGSB =1.6Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
"D
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
1880 MHz
1900 MHz
1920 MHz
1900 MHz
1880 MHz
100
W--CDMA TEST SIGNAL
10
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 9. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
2468
PROBABILITY (%)
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
Input Signal
12
-- 6 0
--100
10
(dB)
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 7 0
-- 8 0
-- 9 0
3.84 MHz
Channel BW
7.21.8 5.43.60-- 1 . 8-- 3 . 6-- 5 . 4-- 9 9
f, FREQUENCY (MHz)
Figure 10. Single--Carrier W--CDMA Spectrum
-- 7 . 2
--ACPR in 3.84 MHz
Integrated BW
+ACPRin3.84MHz
Integrated BW
-- 1 0
0
8
RF Device Data
Freescale Semiconductor
MRF8P20160HR3 MRF8P20160HSR3
VDD =28Vdc,I
DQA = 550 mA
f
MHz
Max Pout (1) Zsource
)
Zload
)
Watts dBm
1880 98 49.9 5.14 -- j9.41 1.56 -- j5.24
1900 98 49.9 7.59 -- j9.88 1.58 -- j5.37
1920 97 49.9 8.90 -- j9.65 1.57 -- j5.48
(1) Maximum output power measurement reflects pulsed 1 dB gain compression.
Zsource = Test circuit impedance as measured from gate contact to ground.
Zload = Test circuit impedance as measured from drain contact to ground.
Figure 11. Maximum Output Power — Doherty Load Pull Optimization for Carrier Side
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
VDD =28Vdc,I
DQA = 550 mA
f
MHz
Max Eff. (1)
%
Zsource
)
Zload
)
1880 65.1 5.14 -- j9.41 3.04 -- j3.65
1900 64.6 7.59 -- j9.88 4.13 -- j2.87
1920 64.6 8.90 -- j9.65 4.12 -- j3.15
(1) Maximum efficiency measurement reflects pulsed 1 dB gain compression.
Zsource = Test circuit impedance as measured from gate contact to ground.
Zload = Test circuit impedance as measured from drain contact to ground.
Figure 12. Maximum Efficiency — Doherty Load Pull Optimization for Carrier Side
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
MRF8P20160HR3 MRF8P20160HSR3
9
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
32
Pin, INPUT POWER (dBm)
VDD =28Vdc, I
DQA = 550 mA, Pulsed CW, 10 &sec(on), 10% Duty Cycle
52
50
48
33
53
51
45
Pout, OUTPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
49
54
56
3129 372827
55
47
46
26
Ideal
Actual
30 34 35 36
1880 MHz
1900 MHz 1920 MHz
1920 MHz
1900 MHz
1880 MHz
f
(MHz)
P1dB P3dB
Watts dBm Watts dBm
1880 103 50.1 122 50.9
1900 104 50.2 120 50.8
1920 104 50.2 118 50.7
Test Impedances per Compression Level
f
(MHz)
Zsource
)
Zload
)
1880 P1dB 5.14 -- j9.41 1.65 -- j5.46
1900 P1dB 7.59 -- j9.88 1.67 -- j5.43
1920 P1dB 8.90 -- j9.65 1.66 -- j5.50
Figure 13. Pulsed CW Output Power
versus Input Power @ 28 V
NOTE: Measurement made on the Class AB, carrier side of the device.
10
RF Device Data
Freescale Semiconductor
MRF8P20160HR3 MRF8P20160HSR3
ALTERNATE CHARACTERIZATION — 2025 MHz
Figure 14. MRF8P20160HR3(HSR3) Test Circuit Component Layout — 2025 MHz
MRF8P20160H
Rev. 1
C10
VGA
R2
CUT OUT AREA
C6
C8
Z1
VGB
C11
R1
C1 C2
C3
C4
C5
R3 C7
C9 C23 C25
VGB C27
C21
C19*
C13
C17
C16 C12
C14
C15
C20 C22 C24
C26
C28
VGA
* Stacked
C18*
C
P
Table 6. MRF8P20160HR3(HSR3) Test Circuit Component Designations and Values — 2025 MHz
Part Description Part Number Manufacturer
C1, C2, C6, C7, C12, C13,
C20, C21
15 pF Chip Capacitors ATC600F150JT250XT ATC
C3, C14, C15 0.3 pF Chip Capacitors ATC600F0R3BT250XT ATC
C4, C5 2.4 pF Chip Capacitors ATC600F2R4BT250XT ATC
C8, C9, C22, C23, C24, C25 10 &F, 50 V Chip Capacitors GRM55DR61H106KA88L Murata
C10, C11 22 &F, 35 V Tantalum Capacitors T491X226K035AT Kemet
C16, C17 0.6 pF Chip Capacitors ATC600F0R6BT250XT ATC
C18, C19 1.1 pF Chip Capacitors ATC600F1R1BT250XT ATC
C26, C27 220 &F, 50 V Electrolytic Capacitors 227CKS505M Illinois Cap
C28 0.8 pF Chip Capacitors ATC600F0R8BT250XT ATC
R1 50 ), 4 W Chip Resistor CW12010T0050GBK ATC
R2, R3 8.25 ), 1/4 W Chip Resistors CRCW12068R25FKEA Vishay
Z1 1900 MHz Band 90#, 3 dB Chip Hybrid Coupler GCS351--HYB1900 Soshin
PCB 0.020*,+r=3.5 RO4350B Rogers
MRF8P20160HR3 MRF8P20160HSR3
11
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 2025 MHz
"D
IRL, INPUT RETURN LOSS (dB)
1995
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 15. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 20 Watts Avg.
-- 1 8
-- 1 6
--16.5
-- 1 7
--17.5
14.7
15.7
15.6
15.5
-- 3 4
44
43
42
41
-- 2 9
-- 3 0
-- 3 1
-- 3 2
"D, DRAIN
EFFICIENCY (%)
"D
Gps, POWER GAIN (dB)
15.4
15.3
15.2
15.1
15
14.9
14.8
2000 2005 2010 2015 2020 2025 2030 2035
40
-- 3 3
--18.5
PARC
PARC (dB)
-- 4 . 5
-- 2 . 5
-- 3
-- 3 . 5
-- 4
-- 5
ACPR (dBc)
1
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 16. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
-- 2 0
11
17
0
60
50
40
30
20
"D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
16
15
10 300
10
-- 6 0
ACPR (dBc)
14
13
12
0
-- 3 0
-- 4 0
-- 5 0
Figure 17. Broadband Frequency Response
0
18
1850
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQA = 550 mA
VGSB =1.6Vdc
12
9
6
1900
GAIN (dB)
15
Gain
1950 2000 2050 2100 2150 2200
IRL
-- 3 0
0
-- 5
-- 1 0
-- 1 5
-- 2 0
IRL (dB)
3--25
2010 MHz
2025 MHz
2010 MHz
2025 MHz
VDD =28Vdc,I
DQA = 550 mA, VGSB =1.6Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
VDD =28Vdc,P
out =37W(Avg.),I
DQA = 550 mA
VGSB = 1.6 Vdc, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
100
12
RF Device Data
Freescale Semiconductor
MRF8P20160HR3 MRF8P20160HSR3
PACKAGE DIMENSIONS
MRF8P20160HR3 MRF8P20160HSR3
13
RF Device Data
Freescale Semiconductor
14
RF Device Data
Freescale Semiconductor
MRF8P20160HR3 MRF8P20160HSR3
MRF8P20160HR3 MRF8P20160HSR3
15
RF Device Data
Freescale Semiconductor
16
RF Device Data
Freescale Semiconductor
MRF8P20160HR3 MRF8P20160HSR3
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
!AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
!EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
!Electromigration MTTF Calculator
!RF High Power Model
!.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Apr. 2010 !Initial Release of Data Sheet
1July 2010 !Added part number MRF8P20160HR3 (NI--780--4), p. 1
!Corrected IDQ1A value from 554 to 550 mA in Thermal Characteristics table and changed thermal
resistance value from 0.95 to 0.75#C/W. Thermal value now reflects the use of the combined dissipated
power from the carrier amplifier and peaking amplifier, p. 2
!Changed VDS(on) values from 0.05 to 0.1 Min, 0.11 to 0.27 Typ and 0.15 to 0.5 Max. Revised numbers
reflect per side measurement versus previous combined measurements, p. 2
!Replaced Fig. 4, Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout =
37 Watts Avg. to show a wider bandwidth capability, p. 6
!Replaced Fig. 15, Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout =
20 Watts Avg. to show more detailed RF performance capability, p. 11
MRF8P20160HR3 MRF8P20160HSR3
17
RF Device Data
Freescale Semiconductor
Information in this document is provided solely to enable system and software
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