MIG150Q6CMB1X
2001-11-13
1
TOSHIBA Intelli gent Power Module Silicon N Channel IGBT
MIG150Q6CMB1X (1200V/150A 6in1)
High Po wer Switching Applications
Motor Control Applications
· Integrates inverter power circuits and control circuits (IGBT drive units, and units for protection against
short-circuit current, overcurrent, undervoltage and overtemperature) into a single package.
· The electrodes are isolated from the case.
· Low thermal resistance
· VCE (sat) = 2.4 V (typ.)
· UL recognized: File No.E87989
· Weight: 385 g (typ.)
Equivalent Circuit
1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V)
8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L)
15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L)
16 19 20
W V UN P
FO IN VD GND
GND VS OUT
FO IN VD GND
GND VSOUT
FO IN VDGND
GND VSOUT
GND IN FO VD
GND VSOUT
GND IN FO VD
GND VSOUT
GND IN FO VD
GND VS OUT
18 17 14 1315 12 11 10 98765 4 3 2 1
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MIG150Q6CMB1X
2001-11-13
2
Package Dimensions: TOSHIBA 2-123A1A
Unit: mm
1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V ) 6. FO (V) 7. IN (V)
8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L)
15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L)
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MIG150Q6CMB1X
2001-11-13
3
Signal Terminal Layout
Unit: mm
1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V ) 6. FO (V) 7. IN (V)
8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L)
15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L)
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MIG150Q6CMB1X
2001-11-13
4
Maximum Ratings (Tj =
==
= 25°C)
Stage Characteristics Condition Symbol Rating Unit
Supply volt age P-N power termi nal VCC 900 V
Collect or-emitter voltage ¾ V
CES 1200 V
Collector current Tc = 25°C, DC IC 150 A
Forward current Tc = 25°C, DC IF 150 A
Collect or power dissi pation Tc = 25°C PC 1400 W
Inverter
Junction temperature ¾ T
j 150 °C
Control suppl y volt age VD-GND terminal VD 20 V
Input volt age IN-GND termi nal VIN 20 V
Fault output voltage FO-GND terminal VFO 20 V
Control
Fault output current FO sink current IFO 14 mA
Operating temperature ¾ Tc -20~+100 °C
Storage temperature range ¾ Tstg -40~+125 °C
Isolation vol tage AC 1 min VISO 2500 V
Module
Screw torque M5 ¾ 3 N･m
Electrical Characteristics
1. Inverter stage
Characteristics Symbol Test Condition Min Typ. Max Unit
Tj = 25°C ¾ ¾ 1
Collector cut-off current ICEX V
CE = 1200 V Tj = 125°C ¾ ¾ 10
mA
Tj = 25°C ¾ 2.4 2.8
Collect or-em it t e r saturati on vol tage VCE (sat) VD = 15 V
IC = 150 A
VIN = 15 V ® 0 V Tj = 125°C ¾ 2.8 ¾ V
Forward voltage VF I
F = 150 A, Tj = 25°C ¾ 2.4 2.8 V
ton ¾ 2.0 3.0
tc (on) ¾ 0.6 ¾
trr ¾ 0.3 ¾
toff ¾ 1.0 2.0
Switchin g time
tc (off)
VCC = 600 V, IC = 150 A
VD = 15 V, VIN = 15 V « 0 V
Tj = 25°C, Inductive load
(Note 1)
¾ 0.3 ¾
ms
Note 1: Switching time test circuit & timing chart
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MIG150Q6CMB1X
2001-11-13
5
2. Control stage
(Tj =
==
= 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
High side ID (H) ¾ 13 17
Control ci rcuit current Low side ID (L) VD = 15 V ¾ 39 51 mA
Input on signal voltage VIN (on) 1.4 1.6 1.8
Input off signal volt age VIN (off) VD = 15 V 2.2 2.5 2.8 V
Protection IFO (on) ¾ 10 12
Fault output current Normal IFO (off) VD = 15 V ¾ ¾ 0.1
mA
Overcurrent prot ection trip
level Inverter OC VD = 15 V, Tj
<
=
125°C 240 ¾ ¾ A
Short-ci rcuit prot ect i on
trip level Inverter SC VD = 15 V, Tj
<
=
125°C 240 ¾ ¾ A
Overcurrent c ut-of f t ime toff (OC) V
D = 15 V ¾ 5 ¾ ms
Trip level OT 110 118 125
Overtemperature
protection Reset leve l OTr Case temperature ¾ 98 ¾ °C
Trip level UV 11.0 12.0 12.5
Control suppl y under
voltage protect ion Reset leve l UVr ¾ 12.0 12.5 13.0 V
Fault output pulse width tFO V
D = 15 V 1 2 3 ms
3. Thermal resistance
(Tc =
==
= 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
IGBT ¾ ¾ 0.089
Junction to case thermal resistance Rth (j-c) FRD ¾ ¾ 0.19 °C/W
Case to fin therm al resistance Rth (c-f) Compound is applied ¾ 0.013 ¾ °C/W
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MIG150Q6CMB1X
2001-11-13
6
Switching Time Test Circuit
Timing Chart
PG
TLP559
15
V
0.1
m
F
47
m
F
15
k
W
Intelligent power module
VD
IN
GND
OUT
VS
GND
U (V, W)
P
VCC
15
V
0.1
m
F
47
m
F
15
k
W
VD
IN
GND
OUT
VS
GND
IF =
16 mA
N
Input pulse
VIN Wave fo rm
IC Wavef o rm
VCE Wavef o rm
2.5 V 1.6 V
15 V
10% 10%
t
o
f
f
tc
(
off
)
10% 10%
t
o
ntc
(
on
)
0
90% Ir
r
tr
r
Ir
r
20% Ir
r
90%
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MIG150Q6CMB1X
2001-11-13
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4. Recommended conditions for application
Characteristics Symbol Test Condition Min Typ. Max Unit
Supply volt age VCC P-N power terminal ¾ 600 800 V
Control suppl y volt age V D V
D-GND signal terminal 13.5 15 16.5 V
Carrier frequency fc PWM control ¾ ¾ 20 kHz
Dead time tdead Switc hi ng time test circuit
(Note 2) 5 ¾ ¾ ms
Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When
specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead
time given above.
Dead Time Timing Chart
tdead
15
V
VIN Wave form
VIN Wave form
0
15
V
0
tdead
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MIG150Q6CMB1X
2001-11-13
8
Forward current IF (A)
Switching time (ms)
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
Collector current IC (A)
Switching time – IC
Switching time (ms)
Collector current IC (A)
Switching time – IC
Forward voltage VF (V)
IF – VF
Forward current IF (A)
trr, Irr – IF
Peak reverse recovery current Irr (A)
Reverse recovery time trr (´ 10 ns)
300
00
200
100
1 2 3 4
Common emitter
Tj = 25°C VD = 17 V
VD = 13 V
VD = 15 V
300
0
200
100
0 1 2 3 4
Common emitter
Tj = 125°C
VD = 17 V
VD = 13 V
VD = 15 V
10
0.01
1
0.1
0 50 100 150 200
Tj = 25°C
VCC = 600 V
VD = 15 V
L-Load
ton
toff
tc (on)
tc (off)
10
0.01
1
0.1
0 50 100 150 200
Tj = 125°C
VCC = 600 V
VD = 15 V
L-Load
ton
toff
tc (on)
tc (off)
300
0
200
100
0 1 2 3 4
Common cathode
Tj = 25°C
Tj = 125°C
tr
r
Ir
r
100
10
10
50 100 150 200
Common cathode
T
j = 25°C
T
j = 125°C
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MIG150Q6CMB1X
2001-11-13
9
Transient thermal resistance Rth (t) (°C/W)
Collector current IC (A)
Case temperature Tc (°C)
OC – Tc
Overcurrent protection trip level OC (A)
Carrier frequency fc (kHz)
ID (H) – fc
High side control circuit current ID (H) (mA)
Carrier frequency fc (kHz)
ID (L) – fc
Low side control circuit current ID (L) (mA)
Collector-emitter voltage VCE (V)
Reverse bias SOA
Pulse width tw (s)
Rth (t) – tw inverter stage
0.001 0.01 10 0.1 1
0.001
1
0.01
0.1
Tc = 25°C
Diode stage
Transistor stage
500
0
400
300
200
100
0 25 75 125 150 50 100
VD = 15 V
0 5 15 25 10 20
0
40
30
20
10
VD = 15 V
Tj = 25°C
0 5 15 25 10 20
0
80
40
100
60
20 VD = 15 V
Tj = 25°C 0
240
160
80
280
200
120
40
0 100 300 500 200 400 700 600
Vj
<
= 125°C
VD = 15 V
OC
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MIG150Q6CMB1X
2001-11-13
10
Collector current IC (A)
Turn on loss – IC
Turn on loss Eon (mJ)
Collector current IC (A)
Turn off los s – IC
Turn off loss Eoff (mJ)
Tj = 125°C
Tj = 25°C
VCC = 600 V
VD = 15 V
L-Load
0 50 150 100 200
0.01
100
10
1
0.1
Tj = 125°C
Tj = 25°C
VCC = 600 V
VD = 15 V
L-Load
0 50 150 100 200
0.01
100
10
1
0.1
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MIG150Q6CMB1X
2001-11-13
11
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc. .
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EA
A
RESTRICTIONS O N PRODUCT USE
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