QS043-401M0058 (2/4) 12 23.0 9 30 +1.0 - 0 .5 14 23.0 14 9 12 17 35 3-M5 17.0 14 3 4-fasten tab #110 t=0.5 7 16 7 16 17 16 4-fasten tab #110 t= 0.5 LABEL 6 7 LABEL 23 23 8 3-M5 7 6 5 4 21.2 7.5 5(E1) 4(G1) 2 2-O 5.5 12 4 5 4 94 80 0 .2 5 12 11 1 .0 30 +1 - 0 .5 (C1) 3 7 6 3 11 4 18.0 (E2) 2 2 1 48.0 16.0 14.0 (C2E1) 1 7(G2) 6(E2) 4 2-O6.5 4 94.0 80 0.25 12.0 11.0 12.0 11.0 12.0 23 PDMB75B12 PDMB75B12C Dimension:mm ollector-mitter oltage ate-mitter oltage ollector ower issipation unction emperature ange torage emperature ange (erminal to ase ,inute) solation oltage ollector urrent ounting orque odule ase to eatsink , PDMB75B12C . (kgfcm) . PDMB75B12 usbar to ain erminal . ollector-mitter ut-ff urrent ate-mitter eakage urrent . . . = 1200V,= 0V . = 20V,= 0V . ollector-mitter aturation oltage = 75A,= 15V . . ate-mitter hreshold oltage = 5V,= 75mA . . nput apacitance witching ime ise urn-on all urn-off ime ime ime ime eak orward oltage everse ecovery ime = 10V,= 0V,= 1MH 6,300 = 600V L= 8 G= 13 = 15V . . . . . . . . orward urrent . . . = 75A,= 0V . . = 75A,= -10V i/t= 150A/s . . . . . . . hermal mpedance iode th(j-c) Junction to Case QS043-401M0058 (3/4) Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Fig.1- Output Characteristics (Typical) TC=25 150 V GE=20V IC=30A Collector Current I C (A) 100 9V 75 50 8V 25 7V 0 2 4 6 8 Collector to Emitter Voltage V CE (V) 10V 15V 125 0 TC=25 16 12V 14 75A 12 10 8 6 4 2 0 10 0 4 Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 10 8 6 4 2 12 16 700 14 600 12 500 10 400 8 VCE =600V 300 6 400V 200 4 200V 100 2 0 0 100 200 300 400 500 Gate to Emitter Voltage V GE (V) Total Gate Charge Qg (nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) Fig.6- Collector Current vs. Switching Time (Typical) 50000 20000 10000 Capacitance C (pF) 16 RL=8 TC=25 0 20 1.4 Cies 1.2 5000 2000 1000 Coes 500 200 Cres 100 600 1.6 VGE=0V f=1MHZ TC=25 Switching Time t (s) Collector to Emitter Voltage V CE (V) 12 8 20 Gate to Emitter Voltage V GE (V) 75A 4 16 800 150A 14 0 12 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) TC=125 16 0 8 Gate to Emitter Voltage V GE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) IC=30A 150A VCC=600V RG=13 VGE=15V TC=25 tOFF 1 0.8 tf 0.6 0.4 50 0.2 20 0 tON tr 0.1 0.2 0.5 1 2 5 10 20 50 100 200 0 Collector to Emitter Voltage V CE (V) 25 50 75 Collector Current IC (A) QS043-401M0058 (4/4) Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical) 10 VCC=600V IC=75A VGE=15V TC=25 2 ton 1 tr 0.5 tf 0.2 0.1 100 75 50 5 10 20 50 100 0 200 0 1 2 Fig.9- Reverse Recovery Characteristics (Typical) 4 Fig.10- Reverse Bias Safe Operating Area 500 500 I F=75A TC=25 200 trr 100 200 Collector Current I C (A) 100 50 20 10 5 IRrM 2 R G=13 V GE=15V TC125 50 20 10 5 2 1 0.5 0.2 0 150 300 0.1 450 0 400 800 1200 1600 Collector to Emitter Voltage V CE (V) -di/dt (A/s) fig11-Tansient Thermal Impedance 5 Tansient Thermal Impedance Rth (J-C) (C/W) Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 3 Forward Voltage V F (V) Series Gate Impedance RG () 1 TC=125 25 0.05 0.02 TC=25 125 toff Forward Current I F (A) Switching Time t (s) 5 (Typical) 150 2 1 FRD -1 5x10 IGBT -1 2x10 -1 1x10 -2 5x10 -2 2x10 -2 Tc=25 1x10 -3 5x10 1 Shot Pulse -3 2x10 -5 10 -4 10 -3 10 -2 10 -1 10 1 10 1 Time t s