SQ7415AENW
www.vishay.com Vishay Siliconix
S15-2138, Rev. A, 14-Sep-15 1Document Number: 76598
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® power MOSFET
• Low thermal resistance PowerPAK® 1212-8W
package with 1.07 mm profile
• AEC-Q101 qualified
• Wettable flank terminals
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
VDS (V) -60
RDS(on) (Ω) at VGS = -10 V 0.065
RDS(on) (Ω) at VGS = -4.5 V 0.090
ID (A) -16
Configuration Single
Package PowerPAK 1212-8W
PowerPAK
®
1212-8W Single
Top View
1
3.3 mm
3.3 mm
3.3 mm
3
mm
Bottom View
1
S
2
S
3
S
4
G
D
8
D
7
D
6
D
5
1
S
2
S
3
S
7
D
6
D
5
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current TC = 25 °C a
ID
-16
A
TC = 125 °C -11
Continuous Source Current (Diode Conduction)aIS-16
Pulsed Drain Current bIDM -64
Single Pulse Avalanche Current L = 0.1 mH IAS -23
Single Pulse Avalanche Energy EAS 26 mJ
Maximum Power Dissipation bTC = 25 °C PD
53 W
TC = 125 °C 17
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C
Soldering Recommendations (Peak Temperature) d 260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount c RthJA 81 °C/W
Junction-to-Case (Drain) RthJC 2.8
SQ7415AENW
www.vishay.com Vishay Siliconix
S15-2138, Rev. A, 14-Sep-15 2Document Number: 76598
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = -250 μA -60 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 μA -1.5 -2.0 -2.5
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS = -60 V - - -1
μA VGS = 0 V VDS = -60 V, TJ = 125 °C - - -50
VGS = 0 V VDS = -60 V, TJ = 175 °C - - -150
On-State Drain Current a I
D(on) V
GS = -10 V VDS ≤ -5 V -15 - - A
Drain-Source On-State Resistance a RDS(on)
VGS = -10 V ID = -5.7 A - 0.050 0.065
Ω
VGS = -10 V ID = -5.7 A, TJ = 125 °C - - 0.112
VGS = -10 V ID = -5.7 A, TJ = 175 °C - - 0.138
VGS = -4.5 V ID = -4.4 A, - 0.070 0.090
Forward Transconductance b gfs VDS = -15 V, ID = -5.7 A - 13 - S
Dynamic b
Input Capacitance Ciss
VGS = 0 V VDS = -25 V, f = 1 MHz
- 1108 1385
pF Output Capacitance Coss - 132 165
Reverse Transfer Capacitance Crss -84105
Total Gate Charge c Qg
VGS = -10 V VDS = -30 V, ID = -5.7 A
-25.538
nC Gate-Source Charge c Qgs -3.6-
Gate-Drain Charge c Qgd -6.7-
Gate Resistance Rg f = 1 MHz 3 6 9 Ω
Turn-On Delay Time c td(on)
VDD = -30 V, RL = 30 Ω
ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω
-914
ns
Rise Time c tr -914
Turn-Off Delay Time c td(off) -3756
Fall Time c tf -812
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a ISM ---64A
Forward Voltage VSD IF = -6 A, VGS = 0 V - -0.85 -1.2 V
SQ7415AENW
www.vishay.com Vishay Siliconix
S15-2138, Rev. A, 14-Sep-15 3Document Number: 76598
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Transconductance
Capacitance
0
4
8
12
16
20
0 1 2 3 4 5
ID- Drain Current (A)
VDS-Drain-to-Source Voltage (V)
VGS = 10 V thru 5 V
VGS = 3 V
VGS = 4 V
VGS = 2 V
0.0
0.4
0.8
1.2
1.6
2.0
0 1 2 3 4 5
ID- Drain Current (A)
VGS -Gate-to-Source Voltage (V)
T
C
= 25
°
C
TC= - 55 °C
T
C
= 125 °C
0.00
0.05
0.10
0.15
0.20
0.25
0 4 8 12 16 20
RDS(on) -On-Resistance (Ω)
ID- Drain Current (A)
VGS = 4.5 V
V
GS
= 10 V
0
3
6
9
12
15
18
0 1 2 3 4 5
ID- Drain Current (A)
VGS -Gate-to-Source Voltage (V)
TC= - 55 °C
T
C
= 125 °C
TC= 25 °C
0
4
8
12
16
20
0 3 6 9 12 15
gfs-Transconductance (S)
ID- Drain Current (A)
TC= 125 °C
T
C
= - 55 °C
TC= 25 °C
0
400
800
1200
1600
2000
0 10 20 30 40 50 60
C - Capacitance (pF)
VDS-Drain-to-Source Voltage (V)
Ciss
Coss
Crss
SQ7415AENW
www.vishay.com Vishay Siliconix
S15-2138, Rev. A, 14-Sep-15 4Document Number: 76598
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Gate Charge
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Drain Source Breakdown vs. Junction Temperature
0
2
4
6
8
10
0 5 10 15 20 25 30
VGS -Gate-to-Source Voltage (V)
Qg-Total Gate Charge (nC)
ID= 5.7 A
VDS= 30 V
-0.5
-0.2
0.1
0.4
0.7
1.0
- 50 - 25 0 25 50 75 100 125 150 175
VGS(th) Variance (V)
TJ-Temperature (°C)
ID= 250 μA
ID= 5 mA
0.0
0.1
0.2
0.3
0.4
0.5
0246810
RDS(on) -On-Resistance (Ω)
VGS -Gate-to-Source Voltage (V)
TJ= 150 °C
TJ= 25 °C
0.5
0.9
1.3
1.7
2.1
2.5
- 50 - 25 0 25 50 75 100 125 150 175
RDS(on) -On-Resistance (Normalized)
TJ- Junction Temperature (°C)
ID= 5.7 A
VGS = 4.5 V
V
GS
= 10 V
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS-Source Current (A)
VSD-Source-to-Drain Voltage (V)
TJ= 25 °C
TJ= 150 °C
-80
-76
-72
-68
-64
-60
- 50 - 25 0 25 50 75 100 125 150 175
VDS-Drain-to-Source Voltage (V)
TJ- Junction Temperature (°C)
ID= 1 mA
SQ7415AENW
www.vishay.com Vishay Siliconix
S15-2138, Rev. A, 14-Sep-15 5Document Number: 76598
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
0.01 0.1 1 10 100
ID- Drain Current (A)
VDS-Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specied
Limited by RDS(on)*
1 ms
IDM Limited
TC= 25 °C
Single Pulse
BVDSS Limited
10 ms
100 μs
100 ms, 1 s,10 s, DC
IDLimited
0.2
0.1
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 81 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
10-3 10-2 110 100010-1
10-4 100
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
SQ7415AENW
www.vishay.com Vishay Siliconix
S15-2138, Rev. A, 14-Sep-15 6Document Number: 76598
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76598.
1
2
1
0.1
0.01
0.2
0.1
0.05
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.02
10-4 10-3 10-2 10-1
10-5
Package Information
www.vishay.com Vishay Siliconix
Revision: 16-Nov-15 1Document Number: 64614
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PowerPAK® 1212-8W Case Outline
DIM. MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 0.97 1.04 1.12 0.038 0.041 0.044
A1 0 - 0.05 0 - 0.002
A2 0 - 0.13 0 - 0.005
b 0.23 0.30 0.41 0.009 0.012 0.016
c 0.23 0.28 0.33 0.009 0.011 0.013
D 3.20 3.30 3.40 0.126 0.130 0.134
D1 2.95 3.05 3.15 0.116 0.120 0.124
D2 1.98 2.11 2.24 0.078 0.083 0.088
D4 0.47 typ. 0.0185 typ.
D5 2.3 typ. 0.090 typ.
E 3.20 3.30 3.40 0.126 0.130 0.134
E1 2.95 3.05 3.15 0.116 0.120 0.124
E2 1.47 1.60 1.73 0.058 0.063 0.068
E3 1.75 1.85 1.98 0.069 0.073 0.078
E4 0.34 typ. 0.013 typ.
e 0.65 BSC. 0.026 BSC
K 0.86 typ. 0.034 typ.
H 0.30 0.41 0.51 0.012 0.016 0.020
L 0.30 0.43 0.56 0.012 0.017 0.022
L1 0.06 0.13 0.20 0.002 0.005 0.008
0° - 12° 0° - 12°
W 0.15 0.25 0.36 0.006 0.010 0.014
M 0.125 typ. 0.005 typ.
ECN: C15-1530-Rev. B, 16-Nov-15
DWG: 6032
Backside view of single pad
Detail Z
Z
L1
E
E1
2
A1
c
AeM
D1
D
D2 D4
D5
b
2
E2
E4
L
K
H
W
1
2
3
4
1
2
3
4
5
6
7
8
Notes
1 Inch will govern
2 Dimensions exclusive of mold gate burrs
3 Dimensions exclusive of mold ash and
cutting burrs
θ
θ
θ
E3
A2
θ
Application Note 826
Vishay Siliconix
Document Number: 72597 www.vishay.com
Revision: 21-Jan-08 7
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.088
(2.235)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.152
(3.860)
0.094
(2.390)
0.039
(0.990)
0.068
(1.725)
0.010
(0.255)
0.016
(0.405)
0.026
(0.660)
0.025
(0.635)
0.030
(0.760)
Return to Index
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Revision: 01-Jan-2019 1Document Number: 91000
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