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Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
NPN SILICON GERMANIUM RF TRANSISTOR
NESG210719
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
Document No. PU10419EJ03V0DS (3rd edition)
Date Published January 2008 NS
FEATURES
• The device is an ideal choice for OSC, low noise, high-gain amplification
• High breakdown voltage technology for SiGe Tr.
• 3-pin ultra super minimold package (19, 1608 PKG)
ORDERING INFORMATION
3-pin ultra super minimold
package (19, 1608 PKG)
(Pb-Free)
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side
of the tape
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Collector to Base Voltage
Collector to Emitter Voltage
Note Mounted on 1.08 cm2 1.0 mm (t) glass epoxy PCB