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Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
NPN SILICON GERMANIUM RF TRANSISTOR
NESG210719
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
Document No. PU10419EJ03V0DS (3rd edition)
Date Published January 2008 NS
FEATURES
• The device is an ideal choice for OSC, low noise, high-gain amplification
• High breakdown voltage technology for SiGe Tr.
• 3-pin ultra super minimold package (19, 1608 PKG)
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Supplying Form
NESG210719
NESG210719-A
3-pin ultra super minimold
package (19, 1608 PKG)
(Pb-Free)
50 pcs
(Non reel)
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side
of the tape
NESG210719-T1
NESG210719-T1-A
3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
13.0
V
Collector to Emitter Voltage
VCEO
5.0
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
100
mA
Total Power Dissipation
Ptot Note
200
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
Note Mounted on 1.08 cm2 1.0 mm (t) glass epoxy PCB
Data Sheet PU10419EJ03V0DS
2
NESG210719
ELECTRICAL CHARACTERISTICS (TA = +25C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
100
nA
Emitter Cut-off Current
IEBO
VEB = 0.5 V, IC = 0 mA
100
nA
DC Current Gain
hFE Note 1
VCE = 1 V, IC = 5 mA
140
180
220
RF Characteristics
Gain Bandwidth Product (1)
fT
VCE = 1 V, IC = 5 mA, f = 2 GHz
7
10
GHz
Gain Bandwidth Product (2)
fT
VCE = 1 V, IC = 20 mA, f = 2 GHz
12
GHz
Insertion Power Gain (1)
S21e2
VCE = 1 V, IC = 5 mA, f = 2 GHz
6.5
8
dB
Insertion Power Gain (2)
S21e2
VCE = 1 V, IC = 20 mA, f = 2 GHz
9
dB
Noise Figure
NF
VCE = 1 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
0.9
1.5
dB
Associated Gain
Ga
VCE = 1 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
6
9
dB
Reverse Transfer Capacitance
Cre Note 2
VCB = 1 V, IE = 0 mA, f = 1 MHz
0.5
0.7
pF
Notes 1. Pulse measurement: PW 350
s, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
FB
Marking
D7
hFE Value
140 to 220
Data Sheet PU10419EJ03V0DS
3
NESG210719
TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified)
Remark The graphs indicate nominal characteristics.
<R>
Data Sheet PU10419EJ03V0DS
4
NESG210719
Remark The graphs indicate nominal characteristics.
Data Sheet PU10419EJ03V0DS
5
NESG210719
Remark The graphs indicate nominal characteristics.
Data Sheet PU10419EJ03V0DS
6
NESG210719
Remark The graphs indicate nominal characteristics.
Data Sheet PU10419EJ03V0DS
7
NESG210719
S-PARAMETERS
Data Sheet PU10419EJ03V0DS
8
NESG210719
PACKAGE DIMENSIONS
3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) (UNIT: mm)
