AOTF5N50FD 500V, 5A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary The AOTF5N50FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 600V@150 5A RDS(ON) (at VGS=10V) <1.8 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOTF5N50FDL Top View TO-220F D G AOTF5N50FD G D S S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25C TC=100C ID AOTF5N50FD 500 Units V 30 V 5* 3* A Pulsed Drain Current C IDM 13 Avalanche Current C IAR 2.3 A Repetitive avalanche energy C EAR 79 mJ 158 5 35 mJ V/ns W 0.3 -55 to 150 W/ oC C 300 C AOTF5N50FD 65 3.6 Units C/W C/W Single pulsed avalanche energy G EAS Peak diode recovery dv/dt dv/dt TC=25C PD Power Dissipation B Derate above 25oC Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RJA Maximum Junction-to-Case RJC * Drain current limited by maximum junction temperature. Rev.1.0: July 2013 www.aosmd.com Page 1 of 6 AOTF5N50FD Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions Min ID=10mA, VGS=0V, TJ=25C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250A ID=10mA, VGS=0V, TJ=150C 600 V ID=10mA, VGS=0V 0.56 V/ oC VDS=500V, VGS=0V 10 VDS=400V, TJ=125C 100 100 2.5 A 3.5 4.2 n V 1.8 1.6 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2.5A 1.5 gFS Forward Transconductance VDS=40V, ID=2.5A 4 VSD Diode Forward Voltage IS=5A,VGS=0V 0.93 S IS Maximum Body-Diode Continuous Current 5 A ISM Maximum Body-Diode Pulsed Current 13 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd 350 440 530 pF 35 50 65 pF 2.5 4.5 6.5 pF 1.7 3.4 5.2 11 15 nC 8 VGS=10V, VDS=400V, ID=5A 2.7 nC Gate Drain Charge 3.8 nC tD(on) Turn-On DelayTime 18 ns tr Turn-On Rise Time 33 ns tD(off) Turn-Off DelayTime 31 ns tf trr Turn-Off Fall Time IF=5A,dI/dt=100A/s,VDS=100V 87 145 Qrr Body Diode Reverse Recovery Charge IF=5A,dI/dt=100A/s,VDS=100V 0.2 0.4 Body Diode Reverse Recovery Time VGS=10V, VDS=250V, ID=5A, RG=25 26 ns ns C A. The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C, Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The R JA is the sum of the thermal impedance from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=2.3A, VDD=150V, RG=25, Starting TJ=25C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: July 2013 www.aosmd.com Page 2 of 6 AOTF5N50FD TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10 VDS=40V 10V 8 -55C 8V 10 ID(A) ID (A) 6.5V 6 4 125C 6V 1 25C 2 VGS=5.5V 0.1 0 5 10 15 20 25 VDS (Volts) Fig 1: On-Region Characteristics 2 30 5.0 3 4.0 2.5 3.0 VGS=10V 2.0 1.0 2 4 6 8 6 8 10 1.5 1 0.5 0 -100 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 VGS=10V ID=2.5A 2 0.0 0 4 VGS(Volts) Figure 2: Transfer Characteristics Normalized On-Resistance RDS(ON) () 0 -50 0 50 100 150 200 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+02 1E+00 125C IS (A) BVDSS (Normalized) 1E+01 1.1 1 1E-01 1E-02 25C 1E-03 0.9 1E-04 0.8 -100 1E-05 -50 0 50 100 150 200 TJ (C) Figure 5: Break Down vs. Junction Temperature Rev.1.0: July 2013 www.aosmd.com 0.0 0.4 0.8 1.2 1.6 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOTF5N50FD TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 VGS (Volts) Capacitance (pF) VDS=400V ID=5A 12 9 6 1000 Ciss Coss 100 Crss 10 3 1 0 0 4 8 12 16 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 20 100 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 10s RDS(ON) limited 100s 1 1ms 10ms 0.1s DC 0.1 1s TJ(Max)=150C TC=25C 0.01 Current rating ID(A) 6.0 10 ID (Amps) 1 4.8 3.6 2.4 1.2 0.0 1 10 100 1000 0 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOTF5N50FD (Note F) 25 50 75 100 125 TCASE (C) Figure 10: Current De-rating (Note B) 150 ZJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3.6C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 0.001 0.00001 Rev.1.0: July 2013 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF5N50FD (Note F) www.aosmd.com 100 Page 4 of 6 AOTF5N50FD TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 AOTF5N50FD VDS=100V IF=5A dI/dt=100A/s 5 IF (A) 0 -5 -10 -15 -1000 AOTF5N50 -700 -400 -100 200 500 800 1100 Trr (nS) Figure 12: Diode Recovery Characteristics Rev.1.0: July 2013 www.aosmd.com Page 5 of 6 AOTF5N50FD Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.1.0: July 2013 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 6 of 6