Product Brief
800 V CoolMOS™ P7 series
A new benchmark in eiciency and thermal performance
The latest 800 V CoolMOS™ P7 series sets a new benchmark in 800 V superjunction
technologies and combines best-in-class performance with state-of-the-art ease-of-use,
resulting from Infineon’s more than 18 years pioneering superjunction technology inno-
vation. This product family oers 0.1 percent to 0.6 percent eiciency gain and 2°C to 8°C
lower MOSFET temperature as compared to 800 V CoolMOS™ C3 tested in flyback based
applications. Such best-in-class performance comes from a combination of various
optimized device parameters such as more than 50 percent reduction in Eoss and Qg and
reduced Ciss and Coss.
Ease-of-use is an intrinsic feature designed into this product family. The integrated Zener
Diode ESD protection significantly improves ESD robustness, thus reducing ESD related
yield loss. With best-in-class V(GS)th of 3 V CoolMOS™ P7 is easy to drive and the smallest
VGS(th) variation of only ± 0.5 V makes it easy to design-in. This product family continues to
deliver well recognized best-in-class CoolMOS™ quality.
In addition, CoolMOS™ P7 oers a new best-in-class RDS(on): in DPAK a RDS(on) of 280 mΩ is
available, more than 50 percent lower than the nearest 800 V MOSFET competitor. This
new benchmark enables higher power density designs, BOM savings, as well as lower
assembly cost.
Overview of lowest DPAK RDS(on) for 800 V superjunction MOSFETs
800 V CoolMOS™ P7 sets benchmark in best-in-class DPAK RDS(on)
› Best-in-class FOM RDS(on) * Eoss;
reduced Qg, Ciss and Coss
› Best-in-class DPAK RDS(on) of 280 mΩ
› Best-in-class V(GS)th of 3 V and
smallest V(GS)th variation of ± 0.5 V
› Integrated Zener Diode
ESD protection up to Class 2 (HBM)
› Best-in-class quality and reliability
› Fully optimized portfolio
Key features
› 0.1% to 0.6% eiciency gain and
2°C to 8°C lower MOSFET tempera-
ture as compared to CoolMOS™ C3
› Enabling higher power density
designs, BOM savings and lower
assembly cost
› Easy to drive and to design-in
› Better production yield by
reducing ESD related failures
› Less production issues and
reduced field returns
› Easy to select right parts for fine
tuning of designs
Key benefits
www.infineon.com/p7
900 mΩ
CoolMOS™ C3
850 mΩ
Competitor 2
630 mΩ
Competitor 1
280 mΩ
CoolMOS™ P7
Product Brief
800 V CoolMOS™ P7 series
A new benchmark in eiciency and thermal performance
Product portfolio
RDS(on)
[mΩ]
TO-220
FullPAK
TO-220
FullPAK
Narrow Lead
TO-252
DPAK TO-220 TO-247 TO-251
IPAK
TO-251
IPAK SL
ESD class
HBM CDM
4500 IPD80R4K5P7 IPU80R4K5P7
Class 1C
(1 kV-2 kV)
Class C3
(≥1 kV)
3300* IPD80R3K3P7 IPU80R3K3P7
2400* IPD80R2K4P7 IPU80R2K4P7 IPS80R2K4P7
2000* IPD80R2K0P7 IPU80R2K0P7 IPS80R2K0P7
1400 IPA80R1K4P7 IPD80R1K4P7 IPP80R1K4P7 IPU80R1K4P7 IPS80R1K4P7
Class 2
(2 kV-4 kV)
1200* IPA80R1K2P7 IPD80R1K2P7 IPP80R1K2P7 IPU80R1K2P7 IPS80R1K2P7
900* IPA80R900P7 IPD80R900P7 IPP80R900P7 IPU80R900P7 IPS80R900P7
750* IPA80R750P7 IPD80R750P7 IPP80R750P7 IPU80R750P7 IPS80R750P7
600* IPA80R600P7 IPAN80R600P7 IPD80R600P7 IPP80R600P7 IPU80R600P7 IPS80R600P7
450 IPA80R450P7 IPAN80R450P7 IPD80R450P7 IPP80R450P7
360* IPA80R360P7 IPAN80R360P7 IPD80R360P7 IPP80R360P7 IPW80R360P7
280 IPA80R280P7 IPAN80R280P7 IPD80R280P7 IPP80R280P7 IPW80R280P7
Published by
Infineon Technologies Austria AG
9500 Villach, Austria
© 2017 Infineon Technologies AG.
All Rights Reserved.
Order Number: B152-I0328-V1-7600-EU-EC-P
Date: 01 / 2017
Please note!
THIS DOCUMENT IS FOR INFORMATION PURPOSES ONLY AND
ANY INFORMATION GIVEN HEREIN SHALL IN NO EVENT BE
REGARDED AS A WARRANTY, GUARANTEE OR DESCRIPTION OF
ANY FUNCTIONALITY, CONDITIONS AND/OR QUALITY OF OUR
PRODUCTS OR ANY SUITABILITY FOR A PARTICULAR PURPOSE.
WITH REGARD TO THE TECHNICAL SPECIFICATIONS OF OUR
PRODUCTS, WE KINDLY ASK YOU TO REFER TO THE RELEVANT
PRODUCT DATA SHEETS PROVIDED BY US. OUR CUSTOMERS AND
THEIR TECHNICAL DEPARTMENTS ARE REQUIRED TO EVALUATE
THE SUITABILITY OF OUR PRODUCTS FOR THE INTENDED
APPLICATION.
WE RESERVE THE RIGHT TO CHANGE THIS DOCUMENT AND/OR
THE INFORMATION GIVEN HEREIN AT ANY TIME.
Additional information
For further information on technologies, our products, the
application of our products, delivery terms and conditions
and/or prices, please contact your nearest Infineon Technologies
oice (www.infineon.com).
Warnings
Due to technical requirements, our products may contain
dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies oice.
Except as otherwise explicitly approved by us in a written
document signed by authorized representatives of Infineon
Technologies, our products may not be used in any life-
endangering applications, including but not limited to medical,
nuclear, military, life-critical or any other applications where a
failure of the product or any consequences of the use thereof
can result in personal injury.
800 V CoolMOS™ P7 oers best-in-class eiciency and thermal performance
Plug-and-play at 240 VAC in a 110 W LED driver: TO-220 FullPAK 280 mΩ equivalent
* Coming Q2 2017
0.4
0.3
0.2
0.1
0
-0.1
-0.2
-0.3
40 60 80 100
Relative eiciency [%]
CoolMOS™ P7 CoolMOS™ C3 Competitor
Pout [W]
4
2
0
-2
-4
-6
-8
-10
40 60 80 100
Relative temperature [°C]
CoolMOS™ P7 CoolMOS™ C3 Competitor
Pout [W]
+0.4%
–8°C
800 V CoolMOS™ P7 significantly reduces ESD related failures with
integrated Zener Diode ESD protection
Zener Diode ESD protection mechanism under ESD
› VGS is clamped by Zener Diode
› IGS mainly flows through Zener Diode
› Less stress on gate oxide between gate and source
Customer benefits
› Better assembly yield thus less cost
› Lower field failure rate
› Higher quality and better reputation