1 Advanced Power Technology Technology... Beginning in 1984 with the introduction of Power MOS IV(R), APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as a technological leader in MOS controlled devices and Diodes and to deliver products which contribute to our customers' success in delivering higher performance power systems. Service... Outstanding technology is only part of the story. A global network of stocking distributors, representatives, applications engineers, and web tools are in place to support all phases of your product design, evaluation and procurement activities. In a world which demands superior execution, we've won numerous awards as a service leader. Quality... Our commitment is to excellence in all things we do. Whether you are evaluating the quality of our products, our technical assistance, our customer service or the quality of our internal communications systems, excellence is our standard. Continuous improvement is fundamental to our business! CONTENTS HIGH VOLTAGE SMPS TRANSISTORS Page No. IGBTs (Insulated Gate Bipolar Transistors) ...............................................4-6 Low Loss High Performance Power MOS 7(R) MOSFETs ..............................7-9 Standard Power MOS V(R) MOSFETs ........................................................ 10-12 COOLMOSTM MOSFETs ............................................................................... 12 DIODES Silicon Carbide (SiC) Schottky Diodes ....................................................... 13 Fast Recovery Epitaxial Diodes (FREDs) ................................................14-16 High Voltage Schottky Diodes .................................................................... 16 HIGH VOLTAGE LINEAR MOSFETs ..........................................................17 CUSTOM PRODUCTS ..............................................................................17 HERMETIC AND HI-REL PRODUCTS ......................................................17 DIE PRODUCTS .......................................................................................17 POWER MODULES IGBTs (Insulated Gate Bipolar Transistors) .........................................19-25 MOSFETs ................................................................................................ 26-31 Diodes ........................................................................................................ 31 Custom ....................................................................................................... 32 PACKAGE OUTLINE DRAWINGS ........................................................33-35 "COOLMOS" comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG" http://store.iiic.cc/ A Full Line-Up of the very best in High Voltage, High Power, High Performance Transistors for Your SMPS Applications Product Type Product Family up to 200 kHz PT Type IGBTs * NPT Type IGBTs Conventional MOSFETs * Fast-50 kHz Max * Power MOS V * Thunderbolt(R) * -100 kHz Max Super Junction MOSFETs * COOLMOSTM Description Our fastest IGBTs that can replace MOSFETs in many high frequency SMPS applications including soft switching Short circuit rated IGBTs for moderate to high frequency SMPS, UPS, and motor drive applications Best-in-class for on-resistance, gate charge and noise immunity Lowest specific onresitance of any MOSFETs Blocking Voltage, volts 300, 600, 900, 1200 600, 1200 100-1400 600, 800 Fast Anti-Parallel Diode Operation Combi Combi FREDFET Add APT FRED & series Schottky Metal Gate/Planar Stripe YES YES Poly Gate/Planar Cell YES YES Design Tools available at www.advancedpower.com * Transistor Quick Pick web tool to choose the right transistor for your application * Application Notes - Examples Include: - IGBT, MOSFET, and Diode Tutorial - Parallel Connection of Power Electronic Devices - Making Use of Gate Charge Information In MOSFET and IGBT Data Sheets - Optimizing MOSFET and IGBT Gate Current to Minimize dv/dt Induced Failures in SMPS Circuits http://store.iiic.cc/ 3 Insulated Gate Bipolar Transistors (IGBTs) The IGBT (Insulated Gate Bipolar Transistor) is the combination of a MOSFET and a Bipolar Transistor in a single chip and as such combines the best attributes of each type of transistor... The Bipolar Transistor attributes portion allows operation at high on-state current densities with a low on-state voltage drop and the MOSFET structure attributes allows for ease of gate control. The IGBT advantage in current density over MOSFETs facilitates higher output power at equal chip size, provides for smaller and lower cost components, and allows for smaller more compact and higher power density designs. The die size for the IGBT is often 1 or 2 die sizes smaller than a MOSFET at equal current solution which means lower cost than MOSFETs. The characteristics of the IGBT are determined by the technology used (materials, process, design). IGBTs can generally be classified into two basic technologies PT (Punch Through) and NPT (NonPunch Through). There are 3 APT Product Families of IGBTs: PT 1) Power MOS 7(R) PT IGBT Family... These devices are available in 300, 600, 900, and 1200 volt for operation up to 200 kHz hard switching. NPT 2) Thunderbolt(R) NPT IGBT Family... 600 volt only, these devices are capable of operation 100 kHz Max in hard switching applications. 3) Fast NPT IGBT Family... 600 and 1200 volt devices, designed for operation 50 kHz Max in hard switching applications. For soft switching topologies these maximum operating frequencies will be higher. IGBT products offered by APT utilize offers both NPT and PT technologies to cover the widest range of applications and design requirements. They IGBTs can be used as a cost effective alternative to MOSFETs in many applications with high efficiency, improved power density, and lower cost. POWER MOS 7(R) IGBTs Our latest generation of 300, 600, 900, and 1200 volt PTType IGBTs utilizing our advanced proprietary POWER MOS 7(R) Technology. The 300V parts are designed to replace 200-300V MOSFETs in PDP and alternative energy inverters. The 600 volt IGBTs are designed to replace 500V/600V MOSFETs, the 900 volt IGBTs to replace 800 volt MOSFETs, and the 1200 volt IGBTs are designed to replace 1000V/1200V MOSFETs in switch mode power supply (SMPS), power factor correction (PFC), and other high-power applications. For all IGBT's, the gate-drive voltage requirement is similar to a MOSFET. This allows larger die size power MOSFETs, or multiple MOSFETs in parallel to be replaced with just one POWER MOS 7(R) IGBT. Features and Benefits of POWER MOS 7(R) Technology IGBTs Metal Gate... these IGBTs utilize a proprietary planar stripe metal gate design providing internal chip gate resistance one to two orders of magnitude lower than comparable industry standard polysilicon gate devices. This enables very uniform and fast switching across the entire chip with uniform heat distribution. The metal gate minimizes chip gate resistance variation from batch to batch providing the user with more consistent switching performance. In addition, the low chip gate resistance allows the designer maximum range of switching speed and increases the immunity to dv/dt induced turn-on. Higher Threshold Voltage and Reduced "Miller Capacitance"... this provides for increased noise and spurious turn-on immunity and eliminates the need for a negative gate voltage supply for turn-off. This eliminates the need for an auxiliary power supply and simplifies the use of gate driver ICs. Low On-State Voltage... conduction losses are dramatically lower, especially at high temperatures and high currents. Conduction losses at operating currents and temperatures are ~1/8 that of a conventional MOSFET and ~1/3 that of a superjunction MOSFET. Low Gate Charge... this reduces gate drive power losses and enables fast switching. Low Thermal Resistance... this maximizes power dissipation capabilities or lowers junction temperature for improved reliability. Short Tail Current Ideal for Soft Switching... Combis... POWER MOS 7(R) IGBTs are available co-packaged with a fast-recovery, antiparallel diode optimized for low reverse recovery charge, further enhancing performance in power switching applications. Co-packaging the POWER MOS 7(R) IGBTs with these rectifiers reduces EMI, switching losses, and conduction losses, while reducing component count and cost. Low Switching Energies... this enables very low switching losses. In combination with the low conduction losses and the low thermal resistance, new levels of high frequency capability for a given current are achieved. Data sheets now include a graph of frequency vs. current for an IGBT Combi. This graph comprehends both conduction and switching losses and allows the designer to properly select the best device for the application. SiC Combi's.. Power MOS 7(R) IGBTs are now available co-packaged with SiC schottky diodes for the ultimate in performance. Switching energies are up to 50% lower for the SiC/IGBT combi than those parts using conventional Si diodes. In many applications these IGBTs can be used in moderate to high frequency SMPS applications. Also, the NPT technology has some added benefits over the PT type IGBTs. THUNDERBOLT(R) & FAST IGBTs Features and Benefits of NPT IGBTs Ruggedness... NPT Technology is more rugged due to the wider base and lower gain of the PNP bipolar transistor. APT NPT IGBTs are short circuit, avalanche energy, and RBSOA rated while PT POWER MOS 7(R) IGBTs with higher switching frequency capability are RBSOA rated. Paralleling... This is easier with NPT technology due to the positive temperature coefficient of VCE(ON) similar to a MOSFET. PT POWER MOS 7(R) IGBTs from APT have a slightly negative temperature coefficient and can be paralleled but may require added precautions, such as careful thermal matching or VCE(ON) sorting. High Temperature Operation... NPT - The turn-off speed and switching losses remain relatively constant over the entire operating temperature range. PT - The turn-off speed and switching losses increase with temperature, but are extremely low due to the short tail current. http://store.iiic.cc/ 4 NEW! Up To 200 kHz BVCES Volts POWER MOS 7(R) * PT Technology * Ultralow Gate Resistance and Charge * Highest Frequency IGBTs * Ultralow Switching Losses * Excellent Noise Immunity * Single Supply Gate Drive * Combi with High Speed Diode IC2 100 - 110o C Part Number Package Style SINGLE 1200 900 600 3.3 3.2 2.2 2.2 1.6 20 21 27 20 32 APT13GP120K APT15GP90K APT15GP60K APT11GP60K APT32GU30K 3.3 3.3 3.3 3.3 3.2 3.2 3.2 2.2 2.2 2.2 2.2 1.6 1.6 1.6 20 33 46 54 21 36 50 27 49 62 72 32 60 83 APT13GP120B APT25GP120B APT35GP120B APT45GP120B APT15GP90B APT25GP90B APT40GP90B APT15GP60B APT30GP60B APT40GP60B APT50GP60B APT32GU30B APT60GU30B APT83GU30B 1200 600 3.3 2.2 2.2 91 96 100 APT75GP120B2 APT65GP60B2 APT80GP60B2 1200 3.3 3.3 3.3 3.2 2.2 2.2 2.2 2.2 29 34 57 32 40 46 60 68 APT35GP120J APT45GP120J APT75GP120J APT40GP90J APT40GP60J APT50GP60J APT65GP60J APT80GP60J 3.3 3.3 3.2 3.2 2.2 2.2 20 33 21 36 27 49 APT13GP120BDF1 APT25GP120BDF1 APT15GP90BDF1 APT25GP90BDF1 APT15GP60BDF1 APT30GP60BDF1 3.3 3.3 3.2 2.2 2.2 46 54 50 62 72 APT35GP120B2DF2 APT45GP120B2DF2 APT40GP90B2DF2 APT40GP60B2DF2 APT50GP60B2DF2 600 2.2 96 APT65GP60L2DF2 264-MAXTM 1200 3.3 3.3 3.3 3.2 2.2 2.2 2.2 2.2 2.2 29 34 57 32 31 40 46 60 68 APT35GP120JDF2 APT45GP120JDF2 APT75GP120JDF3 APT40GP90JDF2 APT30GP60JDF1 APT40GP60JDF1 APT50GP60JDF2 APT65GP60JDF2 APT80GP60JDF3 ISOTOP(R) 300 1200 900 600 * Hard and Soft Switching * Low Cost Alternative to MOSFETs VCE(ON) 25OC (Typ) Insulated Gate Bipolar Transistors (IGBTs) 300 900 600 TO-220 TO-220[K] TO-247 TO-247[B] T-MAXTM ISOTOP(R) T-MAXTM[B2] Combi (IGBT & "DF Series" FRED) 1200 900 600 1200 900 600 900 600 TO-247 T-MAXTM 264-MAX TM[L2] ISOTOP(R)[J] SOT-227 C COMBI (IGBT & SILICON CARBIDE SCHOTTKY DIODE ) 1200 600 3.3 2.0 2.2 2.2 20 15 27 49 APT13GP120BSC APT15GT60BSC APT15GP60BSC APT30GP60BSC 5 TO-247 G E Insulated Gate Bipolar Transistors (IGBTs) BVCES Volts THUNDERBOLT(R) 600 * NPT Technology 600 * Moderate to High Frequency * Easy Paralleling * Single Supply Gate Drive * Combi with low VF Diode FAST 50 kHz Max * NPT Technology * Short Circuit Rated * Low to Moderate Frequency * Lowest Conduction Loss * Easy Paralleling * Single Supply Gate Drive * Combi with low VF Diode IC2 90-110o C 2.0 2.0 2.0 1.75 2.0 8 12 15 20 30 APT8GT60KR APT12GT60KR APT15GT60KR APT20GT60KR APT30GT60KR 2.0 2.0 2.0 2.0 2.15 2.2 12 15 20 30 40 60 APT12GT60BR APT15GT60BR APT20GT60BR APT30GT60BR APT40GT60BR APT60GT60BR 2.0 60 APT60GT60JR ISOTOP(R) Part Number Package Style SINGLE 100 kHz Max * Short Circuit Rated VCE(ON) 25OC (Typ) 600 TO-220 TO-220[K] TO-247 Combi (IGBT & "D" Series FRED) 600 2.0 2.0 15 30 APT15GT60BRD APT30GT60BRD TO-247 600 2.0 60 APT60GT60JRD ISOTOP(R) 1200 2.5 2.7 11 20 APT11GF120KR APT20GF120KR TO-220 1200 2.7 2.7 20 33 APT20GF120BR APT33GF120BR 600 2.1 50 APT50GF60BR 1200 2.9 50 APT50GF120B2R 600 1.6 100 APT100GF60B2R 1200 3.5 50 APT50GF120LR 600 1.6 100 APT100GF60LR 600 1.6 100 APT100GF60JR ISOTOP(R) TO-247[B] SINGLE TO-247 T-MAXTM T-MAXTM[B2] TO-264 Combi (IGBT & "D" Series FRED) 1200 2.5 2.7 11 20 APT11GF120BRD1 APT20GF120BRD TO-247 1200 2.7 33 APT33GF120B2RD T-MAXTM 600 2.1 50 APT50GF60B2RD 1200 2.7 33 APT33GF120LRD 600 2.1 50 APT50GF60LRD 1200 2.9 2.9 2.1 40 50 60 APT40GF120JRD APT50GF120JRD APT60GF120JRD 1.6 100 APT100GF60JRD 600 TO-264[L] TO-264 ISOTOP(R) ISOTOP(R)[J] SOT-227 C G E 6 Power MOS 7(R) MOSFETs / FREDFETs 550 AND 1100 VOLT PRODUCTS for added voltage headroom to reduce SEB failures and minimize conduction loss tradeoff. Ideal for higher power designs of existing converter topologies where increased field failure rates are a concern and for existing topologies and power levels where converter field failure rates need to be reduced. Our latest generation of conventional MOSFETs with the lowest on-resistance, gate charge, and total losses for a given footprint. .... Designed to meet the most advanced SMPS design requirements for higher reliability, power density, and efficiency, this new generation of MOSFETs dramatically lowers the two largest contributors of power losses in SMPS applications.... Two families of POWER MOS 7(R) MOSFETs are offered: MOSFETs-for applications not utilizing the intrinsic body drain diode LOW CONDUCTION LOSSES... On-Resistance (RDS(ON)) has been lowered by up to 30% and thermal resistance lowered by up to 10% for any given chip size. FREDFETs-for applications utilizing the intrinsic body drain diode. These MOSFETs have the body drain diode optimized for fast reverse recovery time (trr) and improved commutating dv/dt capability by special silicon lifetime control processes. LOW SWITCHING LOSSES... Combining ultra low gate charge and our proprietary aluminum metal gate structure results in a MOSFET capable of extremely fast switching and very low switching losses. Total gate charge (Qg) and "Miller" gate charge (Qgd) have been reduced by up to 60%. Like all APT Power MOSFETs, Power MOS 7(R) utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. In addition, Power MOS 7(R) employs new gate design layouts for extremely low internal chip equivalent gate resistances (EGR) that are up to an order of magnitude lower than competitive devices and provides for very uniform switching across the entire chip. This provides for faster switching speeds, up to 50% faster than our previous generation of Power MOSFETs. APT POWER MOS 7(R) FREDFETs have all the improved features and benefits of APT POWER MOS 7(R) MOSFETs and in addition... * Faster Intrinsic Diode Reverse Recovery...The reverse recovery time (trr) has been reduced thereby eliminating the external FRED and Schottky rectifiers in certain circuit configurations. * Improved Ruggedness... The ruggedness of the intrinsic diode has also been improved, allowing for improved commutating dv/dt ratings. THE RESULT... higher efficiency, and more power in less space. The lowest power loss Figure of Merit (FOM) for conventional high power MOSFETs in the industry FOM = RDS(ON) X Qg CUSTOM FREDFETS FOR HIGH TEMPERATURE OPERATION... The lifetime process utilized for the FREDFETs in this catalog is a proven industry standard. In some designs there are requirements for improved high temperature device performance and this can be made available using our proprietary platinum lifetime control process. Our platinum process provides the high temperature advantages of soft recovery, lower leakage current, and more temperature independent performance. In addition, like all APT Power MOSFETs, Power MOS 7(R) devices are extremely rugged... AVALANCHE ENERGY RATED... All Power MOS 7(R) MOSFETs are 100% tested and guaranteed for avalanche energy. HIGH GATE RUPTURE VOLTAGE... Thick high quality gate oxide allows for specification of 30V continuous operation and 40V transient operation gate voltage. APPLICATIONS FOR FREDFETs... Power MOS 7(R) FREDFETs should be specified under the following conditions: * Whenever the intrinsic body drain diode of the MOSFET is expected to carry forward current. and Power MOS 7(R) provides industry leading spurious turn-on immunity... * In soft switched circuits, where the body diode carries current. HIGH NOISE IMMUNITY... Higher Gate Threshold voltage - Vgs(th), 3 volts minimum. REDUCED SHOOT THROUGH SUSCEPTIBILITY... i n c r e a s e d g a t e t h r e s h o l d vo l t a g e - V g s ( t h ) , u l t r a l ow equivalent gate resistance (EGR) and high input capacitance ratio (Q gs /Q gd ) results in an Industry leading high figure of Merit (FOM) FOM = Vgs(th) X Qgs/Qgd HIGH COMMUTATING dv/dt CAPABILITY... from defect tolerant linear cell design and very low parasitic bipolar base resistance. 7 Power MOS 7(R) MOSFETs / FREDFETs BVDSS Volts RDS(ON) Ohms ID(Cont) Amps 1200 4.700 3.5 1000 3.000 4 MOSFET P/N FREDFET P/N (low trr MOSFET) --- Package Style APT1204R7KFLL APT1003RKLL APT1003RKFLL TO-220[K] 1200 4.700 1.400 1.200 3.5 9 12 ------- APT1204R7BFLL APT1201R4BFLL APT1201R2BFLL 1100 1.200 1.000 10 13 ----- APT1101R2BFLL APT1101RBFLL 1000 3.000 1.600 0.900 0.780 4 8 12 14 APT1003RBLL --APT10090BLL APT10078BLL APT1003RBFLL APT1001R6BFLL APT10090BFLL APT10078BFLL 0.520 0.430 0.380 0.290 0.250 0.210 15 20 17 21 24 29 APT8052BLL APT8043BLL APT6038BLL APT6029BLL APT6025BLL APT6021BLL APT8052BFLL APT8043BFLL APT6038BFLL APT6029BFLL APT6025BFLL APT6021BFLL 550 0.310 0.230 0.180 19 24 31 ------- APT5531BFLL APT5523BFLL APT5518BFLL 500 0.240 0.180 0.160 0.140 22 27 30 35 APT5024BLL APT5018BLL APT5016BLL APT5014BLL APT5024BFLL APT5018BFLL APT5016BFLL APT5014BFLL 300 0.061 0.075 54 44 APT30M61BLL APT30M75BLL APT30M61BFLL APT30M75BFLL 200 0.036 0.034 65 74 APT20M36BLL APT20M34BLL APT20M36BFLL APT20M34BFLL 1200 0.670 0.570 18 22 ----- APT12067B2FLL APT12057B2FLL 1100 0.580 0.440 20 26 ----- APT11058B2FLL APT11044B2FLL 1000 0.450 0.350 23 28 APT10045B2LL APT10035B2LL APT10045B2FLL APT10035B2FLL 800 0.240 0.200 31 38 APT8024B2LL APT8020B2LL APT8024B2FLL APT8020B2FLL 600 0.170 0.130 0.100 35 43 54 APT6017B2LL APT6013B2LL APT6010B2LL APT6017B2FLL APT6013B2FLL APT6010B2FLL 550 0.130 0.100 0.085 41 49 59 ------- 500 0.100 0.075 0.065 46 57 67 APT5010B2LL APT50M75B2LL APT50M65B2LL APT5010B2FLL APT50M75B2FLL APT50M65B2FLL 300 0.036 0.030 84 100 APT30M36B2LL APT30M30B2LL APT30M36B2FLL APT30M30B2FLL 200 0.020 0.016 100 100 APT20M20B2LL APT20M16B2LL APT20M20B2FLL APT20M16B2FLL 800 600 TO-247[B] D3 PAK[S] TO-268 Part Numbers for D3 packages - replace "B" with "S" in part number T-MAXTM[B2] APT5513B2FLL APT5510B2FLL APT55M85B2FLL 8 TO-264[L] Part Numbers for TO-264 packages - replace"B2" with "L" in part number Power MOS 7(R) MOSFETs / FREDFETs BVDSS Volts RDS(ON) Ohms 1200 0.400 1000 ID(Cont) Amps MOSFET P/N FREDFET P/N (low trr MOSFET) 30 --- APT12040L2FLL 0.260 38 APT10026L2LL APT10026L2FLL 800 0.140 52 APT8014L2LL APT8014L2FLL 600 0.075 73 APT60M75L2LL APT60M75L2FLL 550 0.065 78 500 0.050 89 1200 0.670 0.570 0.400 0.310 17 19 24 30 --------- APT12067JFLL APT12057JFLL APT12040JFLL APT12031JFLL 1100 0.580 0.440 0.260 18 22 30 ------- APT11058JFLL APT11044JFLL APT11026JFLL 1000 0.450 0.350 0.260 0.210 21 25 30 37 APT10045JLL APT10035JLL APT10026JLL APT10021JLL APT10045JFLL APT10035JFLL APT10026JFLL APT10021JFLL 800 0.240 0.200 0.140 0.110 29 33 42 51 APT8024JLL APT8020JLL APT8014JLL APT8011JLL APT8024JFLL APT8020JFLL APT8014JFLL APT8011JFLL 600 0.170 0.130 0.100 0.075 0.060 31 39 47 58 70 APT6017JLL APT6013JLL APT6010JLL APT60M75JLL APT60M60JLL APT6017JFLL APT6013JFLL APT6010JFLL APT60M75JFLL APT60M60JFLL 550 0.130 0.100 0.085 0.065 0.050 35 44 51 63 77 ----------- APT5513JFLL APT5510JFLL APT55M85JFLL APT55M65JFLL APT55M50JFLL 500 0.100 0.075 0.065 0.050 0.038 44 51 58 71 91 APT5010JLL APT50M75JLL APT50M65JLL APT50M50JLL APT50M38JLL APT5010JFLL APT50M75JFLL APT50M65JFLL APT50M50JFLL APT50M38JFLL 300 0.036 0.030 0.017 76 88 135 APT30M36JLL APT30M30JLL APT30M17JLL APT30M36JFLL APT30M30JFLL APT30M17JFLL 200 0.020 0.011 104 176 APT20M20JLL APT20M11JLL APT20M20JFLL APT20M11JFLL --- APT55M65L2FLL APT50M50L2LL APT50M50L2FLL MOSFET/FRED ("Combi Products") BVDSS Volts 500 RDS(ON) Ohms ID(Cont) Amps 0.100 0.075 44 51 BOOST CONFIGURATION MOSFET P/N APT5010JLLU2 APT50M75JLLU2 9 Package Style 264-MAX TM[L2] ISOTOP(R)[J] SOT-227 (ISOLATED BASE) Power MOS V(R) MOSFETs / FREDFETs Introduced in 1997 and designed to meet the most advanced SMPS design requirements for higher reliability, power density, and efficiency at that time, Power MOS V(R) can still provide the best trade-off between performance and cost in some applications. Like all APT Power MOSFETs, Power MOS V(R) utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. The result is extremely low internal chip equivalent gate resistances (EGR) that are up to an order of magnitude lower than competitive devices which enables uniform high speed switching across the entire chip. Two families of POWER MOS V(R) MOSFETs are offered: * MOSFETs - for applications not utilizing the intrinsic body drain diode * FREDFETs - for applications utilizing the intrinsic body drain diode. These MOSFETs have the body drain diode optimized for fast reverse recovery time (trr) and improved commutating dv/dt capability by special silicon lifetime control processes. APT POWER MOS V(R) FREDFETs have all the improved features and benefits of APT POWER MOS V(R) MOSFETs and in addition... * Faster Intrinsic Diode Reverse Recovery .... The reverse recovery time (trr) has been reduced thereby eliminating the external FRED and Schottky rectifiers in certain circuit configurations. * Improved Ruggedness... The ruggedness of the intrinsic diode has also been improved, allowing for improved commutating dv/dt ratings. CUSTOM FREDFETS FOR HIGH TEMPERATURE OPERATION... The lifetime process utilized for the FREDFETs in this catalog is a proven industry standard. In some designs there are requirements for improved high temperature device performance and this can be made available using our proprietary platinum lifetime control process. Our platinum process provides the high temperature advantages of soft recovery, lower leakage current, and more temperature independent performance. APPLICATIONS FOR FREDFETS... Power MOS V(R) FREDFETs should be specified under the following conditions: * Whenever the intrinsic body drain diode of the MOSFET is expected to carry forward current. * In soft switched circuits, where the body diode carries current. BVDSS Volts RDS(ON) Ohms ID(Cont) Amps MOSFET P/N FREDFET P/N (low trr MOSFET) 1200 1.600 1.500 1.000 0.860 8 10 11 13 ----APT1001RBVR APT10086BVR APT1201R6BVFR APT1201R5BVFR APT1001RBVFR APT10086BVFR 0.750 0.650 0.560 12 13 16 APT8075BVR APT8065BVR APT8056BVR APT8075BVFR APT8065BVFR APT8056BVFR 600 0.400 0.350 0.300 0.250 16 18 21 25 APT6040BVR APT6035BVR APT6030BVR APT6025BVR APT6040BVFR APT6035BVFR APT6030BVFR APT6025BVFR 500 0.280 0.240 0.200 0.170 0.150 20 22 26 30 32 APT5028BVR APT5024BVR APT5020BVR APT5017BVR APT5015BVR APT5028BVFR APT5024BVFR APT5020BVFR APT5017BVFR APT5015BVFR 1000 800 Package Style TO-247[B] D3 PAK[S] TO-268 Part Numbers for D3 packages - replace "B" with "S" in part number 10 Power MOS V(R) MOSFETs / FREDFETs BVDSS Volts RDS(ON) Ohms ID(Cont) Amps MOSFET P/N FREDFET P/N (low trr MOSFET) 400 0.200 0.160 0.140 0.120 23 27 28 37 --------- 300 0.085 0.070 40 48 APT30M85BVR APT30M70BVR APT30M85BVFR APT30M70BVFR 200 0.045 0.040 0.038 56 59 67 APT20M45BVR APT20M40BVR APT20M38BVR APT20M45BVFR APT20M40BVFR APT20M38BVFR 100 0.025 0.019 75 75 APT10M25BVR APT10M19BVR APT10M25BVFR APT10M19BVFR 1200 0.800 0.600 16 20 ----- APT12080B2VFR APT12060B2VFR 1000 0.500 0.400 21 26 APT10050B2VR APT10040B2VR APT10050B2VFR APT10040B2VFR 800 0.300 0.240 27 33 APT8030B2VR APT8024B2VR APT8030B2VFR APT8024B2VFR 600 0.200 0.150 0.110 30 38 49 APT6020B2VR APT6015B2VR APT6011B2VR APT6020B2VFR APT6015B2VFR APT6011B2VFR 500 0.140 0.100 0.085 0.080 37 47 56 58 APT5014B2VR APT5010B2VR APT50M85B2VR APT50M80B2VR APT5014B2VFR APT5010B2VFR APT50M85B2VFR APT50M80B2VFR 400 0.070 57 --- APT40M70B2VFR 300 0.040 76 APT30M40B2VR APT30M40B2VFR 200 0.022 0.018 100 100 APT20M22B2VR APT20M18B2VR APT20M22B2VFR APT20M18B2VFR 100 0.011 0.009 100 100 ----- APT10M11B2VFR APT10M11B2VFR 1200 0.450 26 --- APT12045L2VFR 1000 0.300 33 APT10030L2VR APT10030L2VFR 800 0.180 43 APT8018L2VR APT8018L2VFR 600 0.080 65 APT60M80L2VR APT60M80L2VFR 500 0.060 77 APT50M60L2VR APT50M60L2VFR 1400 0.500 23 --- APT14050JVFR 1200 0.800 0.400 15 26 ----- APT12080JVFR APT12040JVFR 1000 0.500 0.430 0.250 19 22 34 APT10050JVR APT10043JVR APT10025JVR APT10050JVFR APT10043JVFR APT10025JVFR 800 0.300 0.280 0.150 25 28 44 APT8030JVR APT8028JVR APT8015JVR APT8030JVFR APT8028JVFR APT8015JVFR 600 0.150 0.130 0.075 35 40 62 APT6015JVR APT6013JVR APT60M75JVR APT6015JVFR APT6013JVFR APT60M75JVFR 500 0.100 0.085 0.060 0.050 44 50 63 77 APT5010JVR APT50M85JVR APT50M60JVR APT50M50JVR APT5010JVFR APT50M85JVFR APT50M60JVFR APT50M50JVFR Package Style APT4020BVFR APT4016BVFR APT4014BVFR APT4012BVFR 11 TO-247[B] D3 PAK[S] Part Numbers for D3 packages - replace "B" with "S" in part number T-MAXTM[B2] TO-264[L] Part Numbers for TO-264 packages - replace"B2" with "L" in part number 264-MAX TM[L2] ISOTOP(R)[J] SOT-227 (ISOLATED BASE) Power MOS V(R) MOSFETs / FREDFETs BVDSS Volts RDS(ON) Ohms ID(Cont) Amps MOSFET P/N FREDFET P/N (low trr MOSFET) 400 0.070 0.035 53 93 ----- APT40M70JVFR APT40M35JVFR 300 0.040 0.019 70 130 APT30M40JVR APT30M19JVR APT30M40JVFR APT30M19JVFR 200 0.022 0.019 0.011 97 112 175 APT20M22JVR APT20M19JVR APT20M11JVR APT20M22JVFR APT20M19JVFR APT20M11JVFR 100 0.011 0.007 144 225 ----- APT10M11JVFR APT10M07JVFR Package Style ISOTOP(R)[J] SOT-227 (ISOLATED BASE) MOSFET/FRED ("Combi Products") BVDSS Volts RDS(ON) Ohms ID(Cont) Amps 500 0.100 0.100 44 44 MOSFET P/N CONFIGURATION Boost (U2) APT5010JVRU2 APT5010JVRU3 Buck (U3) COOLMOS MOSFETs TM BVDSS Volts RDS(ON) Ohms ID(Cont) Amps MOSFET P/N Package Style 800 0.450 11 APT11N80KC3 TO-220 TO-220[K] 800 0.450 11 APT11N80BC3 0.290 17 APT17N80BC3 600 0.190 0.095 0.070 21 40 47 APT20N60BC3 APT40N60BC3 APT47N60BC3 800 0.290 17 APT17N80SC3 600 0.190 0.070 20 47 APT20N60SC3 APT47N60SC3 D3 800 0.145 34 APT34N80B2C3 T-MAXTM 800 0.145 34 APT34N80LC3 TO-264 800 0.145 31 APT31N80JC3 ISOTOP(R) 600 0.035 77 APT77N60JC3 D3 PAK[S] TO-268 TO-247 TO-247[B] TO-264[L] "COOLMOS" comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG" 12 T-MAXTM[B2] ISOTOP(R)[J] SOT-227 (ISOLATED BASE) NEW! Silicon Carbide Schottky Diodes Reverse Recovery ZERO RECOVERYTM Current Silicon Carbide (SiC) Schottky Diodes are the latest development in high power diode technology. SiC offers superior dynamic and thermal performance over conventional silicon power diodes. The SiC has essentially no reverse recovery and stable switching characteristics over a wide temperature range. With a 175oC TJ rating, positive VF temperature coefficient, and extremely fast switching, enables designs with superior efficiencies and reduced size. When co-packaged with APT's Power MOS7(R) IGBTs switching energies are up to 50% lower than those parts using Si diodes. APPLICATIONS * PFC and Forward Topologies * Hard or Soft Switched Topologies * High Frequency, High Performance Time FEATURES BENEFITS Switching Losses Nearly Eliminated -ZERO RECOVERYTM Greatly Reduced Turn-On Loss In Switch Improved Overall Efficiency Enables Higher Frequency Operation Simplify or Eliminate Snubber Circuits Schottky Barrier-Majority Carrier Only High Temperature Operation Low Leakage Current Radiation Hardness Wide Energy Gap Low Resistance-High Power Density High Breakdown Electric Field High Termal Conductivity High Pulse Capability Reliable High Power Operation Positive VF Temperature Coefficient Thermally Stable Paralleling ZERO RECOVERYTM is a trademark of Cree Inc. Volts Silicon Carbide * Custom Configurations Available * Hermetic Packages Available * See Page 5 for SiC Combi's IF Amps VF (volts) Typ 25OC Part Number Configuration 1200 5 5 10 1.6 1.6 1.6 APT5SC120K APT10SC120KCT APT5SC120K Single Center Tap Single 600 6 6 10 10 20 6 10 1.6 1.6 1.6 1.6 1.6 1.6 1.6 APT6SC60K APT6SC60KCT APT10SC60K APT10SC60KCT APT20SC60K APT6SC60SA APT10SC60SA Single Center Tap Single Center Tap Single Single Single http://store.iiic.cc/ 13 Package Style TO-220 TO-220 D-2 Fast Recovery Epitaxial Diodes (FREDs) Figure 2 Current (A) Figure 1 below shows the typical tradeoff between reverse recovery switching times (trr) and forward voltage drop (VF) for a FRED - lower switching times (faster switching speeds) result in higher forward voltage drop. The specific process and design define the curve. A critical part of the manufacturing process is the lifetime control - the lower the material lifetime the lower the switching times (move left and up the curve). For APT the lifetime control technique is a proprietary platinum diffusion process - the more platinum the faster the switching times. The reverse recovery times are directly related to the reverse recovery charge. APT offers three families or "series" of high performance FRED products which are represented by specific points on the trade off curve of Figure 1. DS DF D Time (ns) VF' Forward Voltage Drop Figure 1 DS Figure 2 shows a relative comparison of the reverse recovery waveforms for each of the 3 "series" of products. Our proprietary platinum lifetime control process results in performance advantages compared to FREDs built with alternative processes for lifetime control: DF * High Temperature Capability - less degradation of performance at high temperatures allowing for increased maximum junction temperature for safe operation. Junction temperature maximum is 150 oC without concern for excessively high leakage currents and thermal runaway. D DQ Switching Time or Qrr {reverse recovery charge} * Softer Recovery - to minimize EMI * Very Fast switching times (trr) along with extremely low reverse recovery current (IRRM) and reverse recovery charge (Qrr) for a given forward voltage (VF). The "D" and "DS" series of FREDs are currently offered as discrete products. The "DF" series FREDs are only offered in the Power MOS 7(R) IGBT combis. NEW! Coming in 2nd Half of 2004: New DQ Series of FREDs APT is pleased to announce the next step forward in FRED technology. The DQ series of products is optimized for continuous conduction mode PFC and other hard switched high performance power supplies. Ultra low reverse recovery charge circumvents high power loss in the PFC switch, enabling higher frequency operation for lower system cost. A well balanced tradeoff between forward voltage and reverse characteristics result in low power loss in the diode as well. The DQ series diodes have very soft recovery under all operating conditions, greatly reducing EMI and the losses and cost associated with filters and snubbers required with snappy diodes. High leakage current that plagues some low recovery charge diodes is eliminated with APT's proprietary platinum minority carrier life time control. APT's proprietary platinum processing results in superior temperature stability, enabling easy paralleling and safe operation up to the 175 oC rated maximum junction temperature. The first DQ series products available will be 600 Volt followed by other voltages. The current ratings are 8, 15, 30, 60, and 100 Amperes. These products will be available in all of the standard package configurations of APT's existing D series FRED products. http://store.iiic.cc/ 14 "D" Series FREDs IF Amps VF (volts) Typ 25OC trr(ns) Typ 25OC 1200 30 60 2.0 2.0 370 400 APT30D120B APT60D120B 1000 30 60 1.9 1.9 300 280 APT30D100B APT60D100B 600 15 30 60 1.6 1.6 1.6 80 85 130 APT15D60B APT30D60B APT60D60B 400 30 60 1.3 1.3 32 37 APT30D40B APT60D40B 300 60 1.2 38 APT60D30B 200 30 60 1.1 1.1 24 31 APT30D20B APT60D20B 1200 15 2.0 260 APT15D120K 1000 15 1.9 260 APT15D100K 600 15 1.6 80 APT15D60K 400 15 1.3 35 APT15D40K 300 15 1.2 32 APT15D30K 1200 27 53 93 2.0 2.0 2.0 370 400 420 APT2X30D120J APT2X60D120J APT2X100D120J 1000 28 55 95 1.9 1.9 1.9 300 280 300 APT2X30D100J APT2X60D100J APT2X100D100J 600 30 60 100 1.6 1.6 1.6 85 130 180 APT2X30D60J APT2X60D60J APT2X100D60J 400 30 60 100 1.3 1.3 1.3 32 37 50 APT2X30D40J APT2X60D40J APT2X100D40J 300 30 60 100 1.2 1.2 1.2 25 38 47 APT2X30D30J APT2X60D30J APT2X100D30J Part Numbers for Parallel Configuration replace 30, 60, or 100 with 31, 61, or 101. 200 30 60 100 1.1 1.1 1.1 24 31 60 APT2X30D20J APT2X60D20J APT2X100D20J Example: 2X30D120J becomes 2X31D120J 1200 15 30 2.0 2.0 260 370 APT15D120BCT APT30D120BCT 1000 15 30 1.9 1.9 80 85 APT15D100BCT APT30D100BCT 600 15 30 1.6 1.6 35 32 APT15D60BCT APT30D60BCT 400 15 30 1.3 1.3 32 25 APT15D40BCT APT30D40BCT 300 15 30 1.2 1.2 32 25 APT15D30BCT APT30D30BCT 200 15 30 1.1 1.1 41 24 APT15D20BCT APT30D20BCT Volts 15 Part Number Package Style TO-247[B] D3 PAK[S] TO-268 Part Numbers for D3 packages - replace "B" with "S" in part number TO-220[K] ISOTOP(R)[J] SOT-227 Antiparallel Configuration (ISOLATED BASE) TO-247[BCT] *Common Cathode * Current rating per leg for common cathode configuration "D" Series FREDs Volts IF Amps VF (volts) Typ 25OC trr(ns) Typ 25OC 1000 60 1.9 280 APT60D100LCT 600 60 1.6 130 APT60D60LCT 400 60 1.3 37 APT60D40LCT 300 60 1.2 38 APT60D30LCT 200 60 1.1 31 APT60D20LCT 1000 15 30 1.9 1.9 260 300 APT15D100BHB APT30D100BHB 600 30 1.6 85 APT30D60BHB 1000 30 1.9 300 APT30D100BCA 600 15 30 1.6 1.6 80 85 APT15D60BCA APT30D60BCA 200 30 1.1 24 APT30D20BCA "DS" Series FREDs Volts 600 IF Amps TO-264[LCT] *Common Cathode TO-247[BHB] Half Bridge TO-247[BCA] Common Anode Two - 300V FREDs in Series VF (volts) Typ 25OC 30 15 Package Style Part Number 4.0 4.5 trr(ns) Typ 25OC Part Number 20 12.5 APT30DS60B APT15DS60B Schottky Diodes These Schottky Diodes offer several dramatic improvements over currently used Fast Recovery Epitaxial Diodes (FREDs): * lower forward voltage drop (VF) to minimize conduction loss enabling higher power conversion efficiencies. * softer reverse recovery characteristics resulting in reduced EMI * avalanche energy rated (EAS) offering improved reliability. Package Style TO-247 Power supply designers can use these new schottky diodes to improve cost, power density, and efficiency of their designs. Designs with these schottky diodes can experience 10-15% lower losses than FRED's with the same voltage ratings. These cost effective Schottky Diodes can replace FRED's as output rectifiers in high power 48 volt telecom rectifiers and DC-DC converters and as free wheeling and anti-parallel diodes in low voltage converters. VF (volts) Typ 25OC "200V" trr(ns) Typ 25OC "200V" 15 0.80 80 APT15S20K 15 0.80 80 APT15S20KCT 60 0.83 55 APT60S20S 30 0.80 55 APT30S20S 100 0.89 70 APT100S20B 60 0.83 55 APT60S20B 30 0.83 55 APT30S20B 30 0.80 55 APT30S20BCT *common cathode 15 0.80 80 APT15S20BCT *common cathode 60 0.83 55 APT60S20B2CT *common cathode T-MAXTM 100 0.89 70 APT100S20LCT *common cathode TO-264 100 0.89 70 APT2X101S20J 60 0.83 55 APT2X61S20J 30 0.80 55 APT2X31S20J IF Amps Part Number Configuration Package Style TO-220 *common cathode D3 PAK TO-247 ISOTOP(R) * Current rating per leg for common cathode configuration http://store.iiic.cc/ 16 Linear MOSFETs What is a Linear MOSFET? A MOSFET specifically designed to be more robust than a standard MOSFET when operated with both high voltage and high current near DC conditions (>100msecs). in high voltage, linear applications. These Linear MOSFETs typically provide 1.5-2.0 times the DC SOA capability at high voltage compared to other MOSFET technologies optimized for switching applications. The Problem with SMPS MOSFETs MOSFETs optimized for high frequency SMPS applications have poor high voltage DC SOA. Most SMPS type MOSFETs overstate SOA capability at high voltage on the data sheets. Above ~30V and DC conditions, SOA drops faster than is indicated by PD limited operation. For pulsed loads (t<10ms) there is generally no problem using a standard MOSFET. Designers will need Linear MOSFETs when... * High Current & > 200V >100msec * Used as a variable power resistor * Soft start application (limit surge currents) * Linear amplifier circuit Typical Applications... * Active loads above 200 volts such as DC dynamic loads for testing power supplies, batteries, fuel cells, etc. * High voltage, high current constant current sources. APT Technology Innovation Introduced in 1999, APT modified its proprietary patented selfaligned metal gate MOSFET technology for enhanced performance BVDSS Volts RDS(ON) Ohms ID(Cont) Amps SOA Watts Part Number 600 0.125 49 325 APL602B2 500 0.090 58 325 APL502B 1000 0.600 18 325 APL1001J 600 0.125 43 325 APL602J 500 0.090 52 325 APL502J Package Style T-MAXTM[B2] TO-264[L] ISOTOP(R)[J] SOT-227 (ISOLATED BASE) Part Numbers for TO-264 packages - replace "B2" with "L" in part number Custom Products In addition to the broad line of leading edge products in this catalog, APT is dedicated to providing innovative solutions for our customers. This means working with our customers to solve their procurement, manufacturing or application problems. We are known as the supplier that provides solutions that others cannot, or will not, provide. These include, but are not limited to: * * * * * * Custom silicon and packaging Supply chain management requirements Strategic inventories to allow for unexpected changes in demand Special testing Thermal and power management Hi-Rel Testing/Screening Hermetic and Hi-Rel Advanced Power Technology manufactures a broad range of discrete power semiconductors for industrial, military, and space applications. Our focus is on the high voltage, high power, and high performance segment of this market. APT's technology leadership allows us to offer the latest high performance power MOSFETs, FREDFETs, IGBTs, and Diodes. All products listed in this catalog can be provided in hermetic packages. APT is ISO9001-2000 registered, MIL-PRF-19500 certified and can offer TX, TXV, Space Level processing, Custom testing and screening as well as Plastic Up-Screening. Contact your local representative or APT directly for a copy of the current Hi-Rel Capabilities Brochure. Die Products Advanced Power Technology's products are available in die form. Die information can be requested from our website at www.advancedpower.com or contact APT directly for a copy of the current Die Product Catalog. 17 Power Modules Advanced Power Technology offers a comprehensive line of standard off the shelf module products as well as custom Application Specific Power Modules (ASPM(R)) designed specifically to meet your special needs using state of the art assembly techniques, materials and silicon. Our modules are used in a wide variety of markets and applications similar to our discrete products where their benefits provide our customers with superior value. Those benefits include: The use of bare dice results in a high degree of integration and facilitates close spacing between devices. In such highly integrated power structures the number of external connections is kept to a bare minimum, four only in the case of a full bridge (+Vbus, 0Vbus, VOut1, VOut2). All other connections are internal and very short for minimum parasitic resistance and inductance. Low parasitics permit safe operation at high frequencies by improving efficiency and reducing voltage overshoots at device turn off. Lower overshoots also equate to less EMI/RFI and easier filtering. Both the size and weight of a power function are shrunk drastically as a result of integration. Most wiring is internal and little hardware is needed to assemble the module onto its heat sink and to connect it electrically. Depending on the circuit complexity and on the power to be dissipated it is sometimes possible to dispense entirely with a costly and heavy base plate. For larger modules where a base plate is nonetheless obligatory, it may be advantageous to specify a Metal-Matrix-Composite material (AlSiC). Such a baseplate permits significant weight reduction (AlSiC density = 3, Copper density = 8.6). Using a power module greatly reduces the amount of required external hardware -- busbars, screws, wire, etc. Thanks to the compact nature of ASPM(R) modules, decoupling capacitors may be situated close to the power bus, thereby nullifying the effects of stray inductance between bus and module. Procurement costs for the complete circuit function are much less, as only a single macro-component is sourced instead of the multitude of parts needed for a discrete solution. The attachment of bare dice onto a substrate results in excellent thermal management with full galvanic isolation to the base plate. Labor costs for system assembly at the end customer are much lower. The substrate (Insulated Metal Substrate or ceramic either alumina Al2O3 or aluminium nitride AlN) and the type and number of semiconductor chips are carefully chosen based on the required electrical and thermal performance as well as on cost. Kelvin connections to gates and sources can be implemented directly on-chip, thereby separating control signals from the power paths for optimum noise immunity. For special applications like linear, RF and Hi-Rel, power semiconductor chips may be pre-sorted into narrow bands of VGS(th) or leakage current, to improve system performance through parameter matching. Circuit functions that generate substantial losses are integrated onto substrates for external cooling, while drivers and protection elements dissipating little power are assembled in SMD form onto PCBs inside the housing. Galvanic isolation of the input signals may be realized via internal optocouplers or transformers with an integrated DC-DC converter furnishing isolated LV power. Such a module is driven by low-level ground-referenced signals. RCD snubber networks may also be integrated into an ASPM(R) module, their close proximity to the power semiconductors guaranteeing effectiveness. Because all internal power connections are mask defined during substrate manufacture, reproducibility of both thermal and electrical characteristics is near perfect, both within a given batch and from lot to lot. Summarizing, better voltage safety margins together with first class and reproducible thermal and electrical performance lead to improved reliability of ASPM(R) modules compared to discrete assemblies. Time to market is shortened, thereby benefiting the customer's Returnon-Investment. APT Europe provides the engineering of the complete power function, allowing the customer to concentrate on system and packaging considerations. The Customer-Specific-Module approach offers great flexibility. An ASPM(R) module is easily upgradeable through design improvements, substitution of more advanced semiconductors, better manufacturing techniques and so on in order to maintain state-of-the-art performance at competitive costs. Modules are compatible with standard of the industry, easy to market and price competitive. Full product range is offered including PT, NPT and Trench gate IGBTs, Power MOS V, Power MOS 7 MOSFETs and FREDFETs, CoolmosTM and SiC diodes in a comprehensive range of electrical configurations. Low profile modules combined with state of the art devices permit enhanced electrical, thermal and mechanical ratings. ASPM(R) modules integrate the exact customer electrical configuration (power and driver) including device part number (mix of silicon sources possible). Specific silicon (sorted on specific parameters), specific material and assembly processes, dedicated shape of connectors and package combined with the implementation of screening procedures make the ASPM(R) module to meet thermal, electrical, quality and reliability requirements of the customer. The ASPM(R) module is designed to meet 100% of the customer needs. It provides the customer with a unique solution. APT has development, design and engineering competencies, analytical and modeling tools, manufacturing technologies, multisite infrastructure to satisfy your requirements in power integration, providing design for manufacturability, and improvement in performance and reliability. The thermal cycling capability of the module can be dramatically extended by replacing the copper base plate with engineered materials such as AlSiC due to the closely matched Temperature Coefficients of Expansion compared to the internal ceramic substrates. http://store.iiic.cc/ 18 IGBT Power Modules 3 PHASE BRIDGE VCES (V) 600 1200 1700 600 1200 1700 IC(A) VCE(ON) Tf(Ic)(ns) o TC=80 C at rated Ic at rated Ic IGBT Type Package Style NTC 20 30 50 10 15 25 50 50 2.1 2.1 2.1 3.2 3.2 3.2 3.2 3.2 40 40 40 100 100 100 100 30 NPT NPT NPT NPT NPT NPT NPT NPT E2 E2 E2 E2 E2 E2 E2 E2 - 20 20 30 30 50 50 90 90 125 125 150 150 10 10 15 15 25 25 50 50 50 50 75 75 100 100 150 150 50 50 75 75 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.0 2.0 2.1 2.1 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 1.7 1.7 1.7 1.7 1.7 1.7 3.2 3.2 3.5 3.5 40 40 40 40 40 40 40 50 40 40 50 50 100 100 100 100 100 100 100 100 100 100 90 90 90 90 90 90 30 30 60 60 NPT NPT NPT NPT NPT NPT NPT NPT NPT NPT NPT NPT NPT NPT NPT NPT NPT NPT NPT NPT NPT NPT TRENCH TRENCH TRENCH TRENCH TRENCH TRENCH NPT NPT NPT NPT P2 P2 P2 P2 P2 P2 E3 E3 E3 E3 E3 E3 P2 P2 P2 P2 P2 P2 P2 P2 E3 E3 E3 E3 E3 E3 E3 E3 E3 E3 E3 E3 YES YES YES YES YES YES YES YES YES YES YES YES YES YES YES YES Long pin package Part Number E2 APTGF20X60E2 APTGF30X60E2 APTGF50X60E2 APTGF10X120E2 APTGF15X120E2 APTGF25X120E2 APTGF50X120E2 APTGS50X170E2 APTGF20X60P2 APTGF20X60TP2 APTGF30X60P2 APTGF30X60TP2 APTGF50X60P2 APTGF50X60TP2 APTGF90X60E3 APTGF90X60TE3 APTGF125X60E3 APTGF125X60TE3 APTGF150X60E3 APTGF150X60TE3 APTGF10X120P2 APTGF10X120TP2 APTGF15X120P2 APTGF15X120TP2 APTGF25X120P2 APTGF25X120TP2 APTGF50X120P2 APTGF50X120TP2 APTGF50X120E3 APTGF50X120TE3 APTGT75X120E3 APTGT75X120TE3 APTGT100X120E3 APTGT100X120TE3 APTGT150X120E3 APTGT150X120TE3 APTGS50X170E3 APTGS50X170TE3 APTGS75X170E3 APTGS75X170TE3 Short pin package P2 E3 Note: Any reference can be built in full bridge configuration instead of 3 phase bridge P+ Q1 5 1 NTC is optional: APTG . . . . E3 (w/o NTC) APTG . . . .TE3 (with NTC) Q3 9 6 2 T1 Q5 10 U W V R 7 3 4 N- Q2 8 11 Q4 12 Q6 T2 (for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com) http://store.iiic.cc/ 19 IGBT Power Modules 3 PHASE BRIDGE + RECTIFIER VCES (V) 600 1200 1700 IC(A) VCE(ON) Tf(Ic)(ns) TC=80o C at rated Ic at rated Ic 10 10 15 15 20 20 30 30 50 50 10 10 15 15 25 25 35 35 50 50 75 75 50 50 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.5 2.5 2.5 2.5 2.5 2.1 1.7 1.7 1.7 1.7 1.7 1.7 2.0 2.0 IGBT Type 40 40 40 40 40 40 40 40 40 40 75 75 75 75 80 80 90 90 90 90 90 90 - NPT NPT NPT NPT NPT NPT NPT NPT NPT NPT NPT NPT NPT NPT NPT NPT TRENCH TRENCH TRENCH TRENCH TRENCH TRENCH TRENCH TRENCH Package Style NTC P2 P2 P2 P2 P2 P2 P2 P2 P3 P3 P2 P2 P2 P2 P2 P2 P3 P3 P3 P3 P3 P3 P3 P3 21 YES YES YES YES YES YES YES YES YES YES YES YES YES YES YES YES YES YES YES YES YES YES YES YES Part Number APTGF10X60RTP2 APTGF10X60BTP2 APTGF15X60RTP2 APTGF15X60BTP2 APTGF20X60RTP2 APTGF20X60BTP2 APTGF30X60RTP2 APTGF30X60BTP2 APTGF50X60RTP3 APTGF50X60BTP3 APTGS10X120RTP2 APTGS10X120BTP2 APTGS15X120RTP2 APTGS15X120BTP2 APTGS25X120RTP2 APTGS25X120BTP2 APTGT35X120RTP3 APTGT35X120BTP3 APTGT50X120RTP3 APTGT50X120BTP3 APTGT75X120RTP3 APTGT75X120BTP3 APTGT50X170RTP3 APTGT50X170BTP3 Q3 Q1 CR7 1 2 3 P3 22 CR10 CR12 CR14 Brake switch is optional: APTG . . . . RTP2 (w/o brake) APTG . . . . BTP2 (with brake) P2 7 18 16 19 17 15 CR11 CR13 CR15 13 14 12 Q7 23 24 Q2 6 5 4 R 11 Q4 Q6 Note: Any reference can be built in full bridge configuration instead of 3 phase bridge (for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com) http://store.iiic.cc/ 20 9 Q5 20 10 8 IGBT Power Modules ASYMMETRICAL BRIDGE VCES (V) IC(A) VCE(ON) o TC=80 C at rated Ic Tf(Ic)(ns) at rated Ic IGBT Type 50 50 50 50 50 75 50 75 75 50 PT PT NPT PT NPT PT NPT PT PT NPT VBUS Package Style NTC VBUS SENSE Q1 Part Number G1 CR3 E1 600 1200 40 70 90 100 180 30 50 60 90 150 2.2 2.2 2.1 2.2 2.1 3.3 3.2 3.3 3.3 3.2 SP4 SP4 SP4 SP6 SP6 SP4 SP4 SP4 SP6 SP6 YES YES YES YES YES YES - APTGU40DH60T APTGU70DH60T APTGF90DH60T APTGU100DH60 APTGF180DH60 APTGU30DH120T APTGF50DH120T APTGU60DH120T APTGU90DH120 APTGF150DH120 OUT1 OUT2 Q4 G4 CR2 E4 0/VBUS SENSE NTC1 NTC2 0/VBUS SP6 FULL BRIDGE VCES (V) 600 1200 IC(A) VCE(ON) Tf(Ic)(ns) TC=80o C at rated Ic at rated Ic 40 70 90 100 180 30 50 60 90 150 2.2 2.2 2.1 2.2 2.1 3.3 3.2 3.3 3.3 3.2 50 50 50 50 50 75 50 75 75 50 IGBT Type PT PT NPT PT NPT PT NPT PT PT NPT Package Style NTC SP4 SP4 SP4 SP6 SP6 SP4 SP4 SP4 SP6 SP6 YES YES YES YES YES YES - Part Number APTGU40H60T APTGU70H60T APTGF90H60T APTGU100H60 APTGF180H60 APTGU30H120T APTGF50H120T APTGU60H120T APTGU90H120 APTGF150H120 SP4 VBUS G3 G1 OUT1 OUT2 E1 600 1200 70 90 140 180 200 350 50 60 100 120 180 300 2.2 2.1 2.2 2.1 2.2 2.1 3.2 3.3 3.2 3.3 3.3 3.2 Q4 G4 G2 E2 E4 NTC1 50 50 50 50 50 50 50 75 50 75 75 50 IGBT Type PT NPT PT NPT PT NPT NPT PT NPT PT PT NPT Package Style NTC SP4 SP4 SP4 SP4 SP6 SP6 SP4 SP4 SP4 SP4 SP6 SP6 YES YES YES YES YES YES YES YES - NTC2 0/VBUS C1 IC(A) VCE(ON) Tf(Ic)(ns) o TC=80 C at rated Ic at rated Ic E3 Q2 DUAL COMMON SOURCE VCES (V) Q3 Q1 C2 Q1 Q2 G1 G2 E1 E2 Part Number APTGU70DU60T APTGF90DU60T APTGU140DU60T APTGF180DU60T APTGU200DU60 APTGF350DU60 APTGF50DU120T APTGU60DU120T APTGF100DU120T APTGU120DU120T APTGU180DU120 APTGF300DU120 NTC1 E NTC2 SP6 SP4 (for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com) http://store.iiic.cc/ 21 IGBT Power Modules BOOST CHOPPER VCES (V) 600 1200 1700 IC(A) VCE(ON) Tf(Ic)(ns) TC=80o C at rated Ic at rated Ic 50 70 75 90 90 125 140 165 180 180 200 250 330 350 25 35 50 50 60 75 100 100 120 150 150 180 200 300 300 30 50 75 100 150 150 200 300 D1 2.1 2.2 2.1 2.0 2.1 2.0 2.2 2.0 2.0 2.1 2.2 2.0 2.0 2.1 1.7 1.7 1.7 3.2 3.3 1.7 1.7 3.2 3.3 1.7 1.7 3.3 1.7 1.7 3.2 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 40 50 40 50 50 40 50 50 50 50 50 40 50 50 90 90 90 50 75 90 90 50 75 90 90 75 90 90 50 200 200 200 200 200 200 IGBT Type NPT PT NPT NPT NPT NPT PT NPT NPT NPT PT NPT NPT NPT Trench Trench Trench NPT PT Trench Trench NPT PT Trench Trench PT Trench Trench NPT Trench Trench Trench Trench Trench Trench Trench Trench D3 Package Style NTC D1 SP4 D1 D1 SP4 D1 SP4 D1 D3 SP4 SP6 D3 D3 SP6 D1 D1 D1 SP4 SP4 D1 D1 SP4 SP4 D1 D3 SP6 D3 D3 SP6 D1 D1 D1 D1 D1 D3 D3 D3 YES YES YES YES YES YES YES YES - Part Number APTGF50DA60D1 APTGU70DA60T APTGF75DA60D1 APTGF90DA60D1 APTGF90DA60T APTGF125DA60D1 APTGU140DA60T APTGF165DA60D1 APTGF180DA60D3 APTGF180DA60T APTGU200DA60 APTGF250DA60D3 APTGF330DA60D3 APTGF350DA60 APTGT25DA120D1 APTGT35DA120D1 APTGT50DA120D1 APTGF50DA120T APTGU60DA120T APTGT75DA120D1 APTGT100DA120D1 APTGF100DA120T APTGU120DA120T APTGT150DA120D1 APTGT150DA120D3 APTGU180DA120 APTGT200DA120D3 APTGT300DA120D3 APTGF300DA120 APTGT30DA170D1 APTGT50DA170D1 APTGT75DA170D1 APTGT100DA170D1 APTGT150DA170D1 APTGT150DA170D3 APTGT200DA170D3 APTGT300DA170D3 SP4 VBUS VBUS SENSE CR1 OUT Q2 G2 E2 0/VBUS SP6 (for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com) http://store.iiic.cc/ 22 NTC2 NTC1 IGBT Power Modules BUCK CHOPPER VCES (V) 600 1200 1700 IC(A) VCE(ON) Tf(Ic)(ns) TC=80o C at rated Ic at rated Ic 50 70 75 90 90 125 140 165 180 180 200 250 330 350 25 35 50 50 60 75 100 100 120 150 150 180 200 300 300 30 50 75 100 150 150 200 300 D1 2.1 2.2 2.1 2.0 2.1 2.0 2.2 2.0 2.0 2.1 2.2 2.0 2.0 2.1 1.7 1.7 1.7 3.2 3.3 1.7 1.7 3.2 3.3 1.7 1.7 3.3 1.7 1.7 3.2 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 40 50 40 50 50 40 50 50 50 50 50 40 50 50 90 90 90 50 75 90 90 50 75 90 90 75 90 90 50 200 200 200 200 200 200 IGBT Type NPT PT NPT NPT NPT NPT PT NPT NPT NPT PT NPT NPT NPT Trench Trench Trench NPT PT Trench Trench NPT PT Trench Trench PT Trench Trench NPT Trench Trench Trench Trench Trench Trench Trench Trench D3 Package Style NTC D1 SP4 D1 D1 SP4 D1 SP4 D1 D3 SP4 SP6 D3 D3 SP6 D1 D1 D1 SP4 SP4 D1 D1 SP4 SP4 D1 D3 SP6 D3 D3 SP6 D1 D1 D1 D1 D1 D3 D3 D3 YES YES YES YES YES YES YES YES - VBUS Part Number APTGF50SK60D1 APTGU70SK60T APTGF75SK60D1 APTGF90SK60D1 APTGF90SK60T APTGF125SK60D1 APTGU140SK60T APTGF165SK60D1 APTGF180SK60D3 APTGF180SK60T APTGU200SK60 APTGF250SK60D3 APTGF330SK60D3 APTGF350SK60 APTGT25SK120D1 APTGT35SK120D1 APTGT50SK120D1 APTGF50SK120T APTGU60SK120T APTGT75SK120D1 APTGT100SK120D1 APTGF100SK120T APTGU120SK120T APTGT150SK120D1 APTGT150SK120D3 APTGU180SK120 APTGT200SK120D3 APTGT300SK120D3 APTGF300SK120 APTGT30SK170D1 APTGT50SK170D1 APTGT75SK170D1 APTGT100SK170D1 APTGT150SK170D1 APTGT150SK170D3 APTGT200SK170D3 APTGT300SK170D3 SP4 G1 E1 OUT 0/VBUS SENSE 0/VBUS SP6 (for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com) http://store.iiic.cc/ 23 NTC2 Q1 NTC1 IGBT Power Modules PHASE LEG VCES (V) 600 1200 1700 IC(A) VCE(ON) Tf(Ic)(ns) TC=80o C at rated Ic at rated Ic 50 70 75 90 90 125 140 165 180 180 200 250 330 350 25 35 50 50 60 75 100 100 120 150 150 180 200 300 300 30 50 75 100 150 150 200 300 D1 2.1 2.2 2.1 2.0 2.1 2.0 2.2 2.0 2.0 2.1 2.2 2.0 2.0 2.1 1.7 1.7 1.7 3.2 3.3 1.7 1.7 3.2 3.3 1.7 1.7 3.3 1.7 1.7 3.2 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 40 50 40 50 50 40 50 50 50 50 50 40 50 50 90 90 90 50 75 90 90 50 75 90 90 75 90 90 50 200 200 200 200 200 200 IGBT Type NPT PT NPT NPT NPT NPT PT NPT NPT NPT PT NPT NPT NPT Trench Trench Trench NPT PT Trench Trench NPT PT Trench Trench PT Trench Trench NPT Trench Trench Trench Trench Trench Trench Trench Trench D3 Package Style NTC D1 SP4 D1 D1 SP4 D1 SP4 D1 D3 SP4 SP6 D3 D3 SP6 D1 D1 D1 SP4 SP4 D1 D1 SP4 SP4 D1 D3 SP6 D3 D3 SP6 D1 D1 D1 D1 D1 D3 D3 D3 YES YES YES YES YES YES YES YES - Part Number APTGF50A60D1 APTGU70A60T APTGF75A60D1 APTGF90A60D1 APTGF90A60T APTGF125A60D1 APTGU140A60T APTGF165A60D1 APTGF180A60D3 APTGF180A60T APTGU200A60 APTGF250A60D3 APTGF330A60D3 APTGF350A60 APTGT25A120D1 APTGT35A120D1 APTGT50A120D1 APTGF50A120T APTGU60A120T APTGT75A120D1 APTGT100A120D1 APTGF100A120T APTGU120A120T APTGT150A120D1 APTGT150A120D3 APTGU180A120 APTGT200A120D3 APTGT300A120D3 APTGF300A120 APTGT30A170D1 APTGT50A170D1 APTGT75A170D1 APTGT100A170D1 APTGT150A170D1 APTGT150A170D3 APTGT200A170D3 APTGT300A170D3 SP4 VBUS Q1 G1 E1 OUT Q2 G2 E2 0/VBUS SP6 (for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com) http://store.iiic.cc/ 24 NTC2 NTC1 IGBT Power Modules SINGLE SWITCH VCES (V) 600 1200 1700 IC(A) VCE(ON) Tf(Ic)(ns) TC=80o C at rated Ic at rated Ic 200 300 360 500 660 200 300 400 600 200 300 400 600 2.1 2.1 2.0 2.0 2.0 1.7 1.7 1.7 1.7 2.0 2.0 2.0 2.0 IGBT Type 40 40 50 40 50 90 90 90 90 200 200 200 NPT NPT NPT NPT NPT Trench Trench Trench Trench Trench Trench Trench Trench Package Style NTC D4 D4 D4 D4 D4 D4 D4 D4 D4 D4 D4 D4 D4 - 1 Part Number APTGF200U60D4 APTGF300U60D4 APTGF360U60D4 APTGF500U60D4 APTGF660U60D4 APTGT200U120D4 APTGT300U120D4 APTGT400U120D4 APTGT600U120D4 APTGT200U170D4 APTGT300U170D4 APTGT400U170D4 APTGT600U170D4 3 5 2 D4 SINGLE SWITCH, INTELLIGENT POWER MODULE VCES (V) IC(A) VCE(ON) Tf(Ic)(ns) TC=80o C at rated Ic at rated Ic IGBT Type Package Style NTC Part Number LP8 1200 70 75 140 150 210 225 280 300 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 50 50 50 50 50 50 50 50 NPT NPT NPT NPT NPT NPT NPT NPT LP8 LP8 LP8 LP8 LP8 LP8 LP8 LP8 YES YES YES YES YES YES YES YES APTLGF70U120T APTLGF75U120T* APTLGF140U120T APTLGF150U120T* APTLGF210U120T APTLGF225U120T* APTLGF280U120T APTLGF300U120T* * AlSiC base plate for extended reliability and AlN substrate for improved thermal performance LOCKOUT _ Q SIGNAL C2 Single switch IGBT module with integrated driver and isolated power supplies dedicated to operate in ZVS (zero voltage switching) operation at 80 KHz. HIGH PROCESSING INH 0V UNDERVOLTAGE C1 -15 V GND ISOLATED AUXILIARY POWER SUPPLY +15 V +12V FREQUENCY TRANSFORMER CIRCUIT E0 HIGH S0 FREQUENCY TRANSFORMER FORCED START UP CIRCUIT DRIVER E1 E2 NTC1 NTC2 (for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com) http://store.iiic.cc/ 25 MOSFET Power Modules BOOST CHOPPER VDSS (V) RDS(ON) m Ohms ID(A) TC=80o C Tf(Id)(ns) MOSFET Package at rated Ic Type Style NTC VBUS VBUS SENSE NTC2 Part Number CR1 200 500 10 8 5 4 38 35 19 17 125 147 250 300 64 70 125 140 10 10 10 10 10 30 10 30 MOS 7 MOS 7 MOS 7 MOS 7 MOS 7 MOS 7 MOS 7 MOS 7 SP4 SP4 SP6 SP6 SP4 SP4 SP6 SP6 YES YES YES YES - APTM20DAM10T APTM20DAM08T APTM20DAM05 APTM20DAM04 APTM50DAM38T APTM50DAM35T APTM50DAM19 APTM50DAM17 OUT Q2 G2 E2 NTC1 0/VBUS SP6 SP4 BUCK CHOPPER VDSS (V) RDS(ON) m Ohms ID(A) TC=80o C Tf(Id)(ns) MOSFET Package at rated Ic Type Style NTC VBUS Part Number NTC2 Q1 G1 200 500 10 8 5 4 38 35 19 17 125 147 250 300 64 70 125 140 10 10 10 10 10 30 10 30 MOS 7 MOS 7 MOS 7 MOS 7 MOS 7 MOS 7 MOS 7 MOS 7 SP4 SP4 SP6 SP6 SP4 SP4 SP6 SP6 YES YES YES YES - APTM20SKM10T APTM20SKM08T APTM20SKM05 APTM20SKM04 APTM50SKM38T APTM50SKM35T APTM50SKM19 APTM50SKM17 E1 OUT 0/VBUS SENSE 0/VBUS NTC1 FULL BRIDGE VDSS (V) 200 500 RDS(ON) m Ohms 20 16 10 8 75 65 38 35 ID(A) Tf(Id)(ns) TC=80o C at rated Ic 62 74 125 147 32 37 64 70 10 10 10 10 10 30 10 30 MOSFET Type FREDFET 7 FREDFET 7 FREDFET 7 FREDFET 7 FREDFET 7 FREDFET 7 FREDFET 7 FREDFET 7 Package Style NTC SP4 SP4 SP6 SP6 SP4 SP4 SP6 SP6 YES YES YES YES - VBUS Part Number APTM20HM20FT APTM20HM16FT APTM20HM10F APTM20HM08F APTM50HM75FT APTM50HM65FT APTM50HM38F APTM50HM35F SP4 Q3 Q1 G3 G1 S1 OUT1 Q4 Q2 G4 G2 S2 NTC1 S4 0/VBUS SP6 (for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com) http://store.iiic.cc/ 26 S3 OUT2 NTC2 MOSFET Power Modules FULL BRIDGE + SERIES AND PARALLEL DIODES VDSS (V) RDS(ON) m Ohms ID(A) TC=80o C 200 500 1000 20 75 450 62 32 13 Tf(Id)(ns) MOSFET Package at rated Ic Type Style NTC 10 10 10 MOS 7 MOS 7 MOS 7 SP4 SP4 SP4 YES YES YES Part Number SP4 APTM20HM20ST APTM50HM75ST APTM100H45ST VBUS CR3A CR1A CR1B CR3B Q1 Q3 G3 G1 OUT1 OUT2 S1 S3 CR4A CR2A CR2B CR4B Q2 Q4 G4 G2 S4 S2 0/VBUS NTC1 NTC2 FULL BRIDGE + RECTIFIER BRIDGE VDSS (V) 500 RDS(ON) ID(A) Tf(Id)(ns) m Ohms TC=80o C at rated Ic 75 32 10 CR1 MOSFET Type FREDFET 7 +A VBUS1 +B VBUS2 Package Style NTC SP4 Q1 YES Part Number SP4 APTM50HM75FRT Q3 CR3 LA G1 G3 LB OUT1A OUT2A NTC1 NA OUT1B NB Q2 OUT2B Q4 R1 CR2 CR4 G2 G4 -A S2 S4 -B 0/VBUS NTC2 FULL BRIDGE, INTELLIGENT POWER MODULE Package Style NTC LP8W LP8W YES YES Part Number APTLM50H10FRT APTLM50HM75FRT V3 H3 L3 L3 CTN1 FREDFET 5 FREDFET 7 V1 H1 L1 L1 60 5 MOSFET Type K 37 32 D 100 75 +BUS + DRIVER 1 L N DRIVER 3 OUT1 DRIVER 5 OUT2 DRIVER 2 DRIVER 4 H4 L4 V4 H2 L4 CTN2 RS VSHVSH+ S 0/VBUS 0/V5 500 RDS(ON) ID(A) Tf(Id)(ns) o m Ohms TC=80 C at rated Ic V5 H5 VDSS (V) (for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com) http://store.iiic.cc/ 27 LP8W MOSFET Power Modules PHASE LEG VDSS (V) RDS(ON) ID(A) Tf(Id)(ns) o m Ohms TC=80 C at rated Ic 10 8 5 5 4 38 35 25 19 17 200 500 125 147 250 250 300 64 70 110 125 140 10 10 10 10 10 10 30 10 10 30 MOSFET Type Package Style NTC NTC2 VBUS Q1 Part Number G1 FREDFET 7 FREDFET 7 FREDFET 7 FREDFET 5 FREDFET 7 FREDFET 7 FREDFET 7 FREDFET 5 FREDFET 7 FREDFET 7 SP4 SP4 SP6 LP8 SP6 SP4 SP4 LP8 SP6 SP6 YES YES YES YES YES YES - APTM20AM10FT APTM20AM08FT APTM20AM05F APTM20AM05FT APTM20AM04F APTM50AM38FT APTM50AM35FT APTM50AM25FT APTM50AM19F APTM50AM17F E1 OUT Q2 G2 E2 0/VBUS NTC1 SP4 SP6 LP8 PHASE LEG + SERIES AND PARALLEL DIODES VDSS (V) RDS(ON) ID(A) Tf(Id)(ns) o m Ohms TC=80 C at rated Ic 200 10 6 38 24 19 230 130 120 500 1000 125 225 64 110 125 26 49 50 10 40 10 5 5 10 15 10 MOSFET Type MOS 7 MOS 7 MOS 7 MOS 7 MOS 7 MOS 7 MOS 7 MOS 5 NTC2 Package Style NTC SP4 SP6 SP4 SP6 LP8W SP4 SP6 LP8W YES YES YES YES YES VBUS Part Number APTM20AM10ST APTM20AM06S APTM50AM38ST APTM50AM24S APTM50AM19ST APTM100A23ST APTM100A13S APTM100A12ST Q1 G1 OUT S1 Q2 G2 0/VBUS S2 NTC1 SP4 SP6 LP8W (for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com) http://store.iiic.cc/ 28 MOSFET Power Modules ASYMMETRICAL BRIDGE VDSS (V) RDS(ON) ID(A) Tf(Id)(ns) o m Ohms TC=80 C at rated Ic MOSFET Type Package Style NTC VBUS Part Number VBUS SENSE Q1 CR3 200 500 20 16 10 8 75 65 38 35 62 74 125 147 32 37 64 70 10 10 10 10 10 30 10 30 MOS 7 MOS 7 MOS 7 MOS 7 MOS 7 MOS 7 MOS 7 MOS 7 SP4 SP4 SP6 SP6 SP4 SP4 SP6 SP6 YES YES YES YES - APTM20DHM20T APTM20DHM16T APTM20DHM10 APTM20DHM08 APTM50DHM75T APTM50DHM65T APTM50DHM38 APTM50DHM35 G1 S1 OUT1 OUT2 Q4 CR2 G4 0/VBUS SENSE S4 NTC1 NTC2 0/VBUS SP4 SP6 DUAL COMMON SOURCE VDSS (V) RDS(ON) ID(A) Tf(Id)(ns) o m Ohms TC=80 C at rated Ic MOSFET Type Package Style NTC Part Number D1 200 500 10 8 5 5 4 38 35 25 19 17 125 147 250 250 300 64 70 110 125 140 10 10 10 10 10 10 30 10 10 30 MOS 7 MOS 7 MOS 7 MOS 5 MOS 7 MOS 7 MOS 7 MOS 5 MOS 7 MOS 7 SP4 SP4 SP6 LP8 SP6 SP4 SP4 LP8 SP6 SP6 YES YES YES YES YES YES - APTM20DUM10T APTM20DUM08T APTM20DUM05 APTM20DUM05T APTM20DUM04 APTM50DUM38T APTM50DUM35T APTM50DUM25T APTM50DUM19 APTM50DUM17 Q2 G2 G1 S1 S2 S NTC1 SP4 SP6 LP8 (for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com) http://store.iiic.cc/ 29 D2 Q1 NTC2 MOSFET Power Modules SINGLE SWITCH + SERIES AND PARALLEL DIODES VDSS (V) 200 500 1000 RDS(ON) ID(A) Tf(Id)(ns) m Ohms TC=80o C at rated Ic 9 5 25 19 130 145 237 110 122 48 40 5 10 5 10 MOSFET Type MOS 7 MOS 7 MOS 7 MOS 7 MOS 5 SK Package Style NTC J3 J3 J3 J3 J3 - CR1 D Part Number S APTM20UM09S APTM20UM05S APTM50UM25S APTM50UM19S APTM100U13S Q1 G J3 MOSFET with SiC Diodes Power Modules VDSS (V) RDS(ON) ID(A) Tf(Id)(ns) o m Ohms TC=80 C at rated Ic MOSFET Type Package Style NTC NTC2 VBUS BOOST CHOPPER W/SILICON CARBIDE PARALLEL DIODES VBUS SENSE CR1 Part Number OUT Q2 500 38 67 5 MOS 7 SP4 YES APTM50DAM38CT G2 S2 NTC1 0/VBUS PHASE LEG + SERIES W/SILICON CARBIDE PARALLEL DIODES VDSS (V) RDS(ON) ID(A) Tf(Id)(ns) m Ohms TC=80o C at rated Ic MOSFET Type Package Style NTC NTC2 VBUS Q1 Part Number G1 OUT 500 1000 38 24 230 130 67 110 27 49 5 5 10 15 MOS 7 MOS 7 MOS 7 MOS 7 SP4 SP6 SP4 SP6 YES YES - APTM50AM38SCT APTM50AM24SC APTM100A23SCT APTM100A13SC S1 Q2 G2 0/VBUS S2 NTC1 FULL BRIDGE + SERIES W/SILICON CARBIDE PARALLEL DIODES VDSS (V) RDS(ON) ID(A) Tf(Id)(ns) o m Ohms TC=80 C at rated Ic MOSFET Type Package Style NTC VBUS CR1A Part Number CR3A CR1B CR3B Q1 G3 OUT1 OUT2 S1 CR2A 500 1000 75 450 34 14 5 10 MOS 7 MOS 7 SP4 SP4 YES YES APTM50HM75SCT APTM100H45SCT Q3 G1 Q2 S3 CR4A CR2B CR4B Q4 G4 G2 S4 S2 NTC1 0/VBUS SP4 SP6 (for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com) http://store.iiic.cc/ 30 NTC2 COOLMOS with SiC Diodes Power Modules TM BOOST CHOPPER W/SILICON CARBIDE PARALLEL DIODES NTC2 VBUS VBUS SENSE CR1 VDSS (V) 600 RDS(ON) ID(A) Tf(Id)(ns) m Ohms TC=80o C at rated Ic 18 107 10 MOSFET Type Package Style NTC Part Number OUT COOLMOS SP4 YES Q2 APTC60DAM18CT G2 E2 NTC1 0/VBUS PHASE LEG + SERIES W/SILICON CARBIDE PARALLEL DIODES VDSS (V) RDS(ON) ID(A) Tf(Id)(ns) m Ohms TC=80o C at rated Ic MOSFET Type Package Style NTC NTC2 VBUS Part Number Q1 G1 600 800 35 18 150 100 75 54 107 21 32 43 10 10 10 10 10 COOLMOS COOLMOS COOLMOS COOLMOS COOLMOS SP4 SP6 SP4 SP4 SP6 YES YES YES - APTC60AM35SCT APTC60AM18SC APTC80A15SCT APTC80A10SCT APTC80AM75SC OUT S1 Q2 G2 0/VBUS S2 NTC1 VBUS FULL BRIDGE + SERIES W/SILICON CARBIDE PARALLEL DIODES VDSS (V) RDS(ON) ID(A) Tf(Id)(ns) m Ohms TC=80o C at rated Ic MOSFET Type Package Style NTC CR1A Part Number CR3A CR1B CR3B Q1 G3 OUT1 OUT2 S1 CR2A 600 800 70 290 29 11 10 10 COOLMOS COOLMOS SP4 SP4 YES YES APTC60HM70SCT APTC80H29SCT Q2 S3 CR4A CR2B CR4B Q4 G4 G2 S4 S2 NTC1 SP4 Q3 G1 0/VBUS NTC2 "CoolMOSTM" comprise a new family of transistors developed by Infineon Technologies AG. "CoolMOSTM" is a trademark of Infineon Technologies AG". SP6 DIODE Power Modules SINGLE DIODE VRRM (V) VF(V) Tj=25o C IF(A) TC80o C DIODE Type Package Style 200 400 600 1000 1200 1.1 1.5 1.8 2.3 2.5 500 500 450 430 400 FRED FRED FRED FRED FRED LP4 LP4 LP4 LP4 LP4 K1 K2 A1 A2 Part Number APTDF500U20 APTDF500U40 APTDF450U60 APTDF430U100 APTDF400U120 LP4 (for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com) http://store.iiic.cc/ 31 Application Specific Power Modules (ASPM(R)) Whatever your application needs are including . . . Power Supplies UPS Medical Imaging Solid State Relays Lighting Control Induction Heating Battery Charger Linear Amplifiers Welding Systems Laser Control RF Amplifiers Inverters/Speed Controllers Our custom approach provides you with a fully integrated solution designed to meet your specific requirements with an optimized balance between performance and cost without compromising quality and reliability. We work closely with you using the latest technologies and innovative circuit and mechanical design to provide the competitive advantage you need. FEATURES AND BENEFITS A mix of the latest silicon & packaging technologies combined with innovative circuit design enables APT to deliver high performance products that meet or exceed our customer requirements in terms of: POWER DENSITY AND SIZE REDUCTION * High level of integration -Power Stage (H-Bridge, 3 Phase Bridge, etc.) -Control & protection functions located on internal PCB -Opto coupler, fiber optic or transformer for isolation of driver circuits * Minimum number of external connections * Reduced overall system size and weight ELECTRICAL CHARACTERISTICS ENHANCEMENT: * Short internal connections minimize parasitic resistance and inductance -Allows high oprating frequencies -Reduced voltage overshoot -Low EMI and RFI -Improved efficiency * Decoupling capacitors to nullify effects of stray inductance * Die can be pre-sorted to enhance performance THERMAL MANAGEMENT: * Power devices mounted directly on thermally conductive substrates * Choice of substrates for optimum performance and cost * Full isolation to baseplate * Engineered materials such as AlSiC, Cu/W, Cu/Mo extend thermal cycling capability PACKAGES AND MATERIALS * Standard or Custom Package Outlines * Wide Variety of Materials for Baseplates, Substrates, Terminals, and Connectors * Leading Edge APT Silicon and Other Chip/Component Suppliers * Integrated Liquid Cooling Option PROCESS CAPABILITES Thick Film Solder Reflow Encapsulation Wire Bond Copper Silver Resistors Multi-Layer Die Coat Potting Compounds Hard Top Resins/Epoxies Vacuum Furnace N2/Forming Gas/H2 Furnace Various Solder Alloys Surface Mount SMD Auto Placement Through Hole Insertion Auto Manual Heavy Gauge Al Wire If you have a specific electrical, mechanical, thermal, or reliability challenge, submit a technical support request from our website. http://store.iiic.cc/ 32 ASPM(R) is a registered trademark of Advanced Power Technology Power Module Outlines E2 Pin out location depends on the module configuration. Please refer to the product datasheet for pins assignment. All dimensions in millimeter D1 P2 D3 E3 D4 P3 33 Power Module Outlines SP4 Pin out location depends on the module configuration. Please refer to the product datasheet for pins assignment. All dimensions in millimeter LP4 SP6 - 3 outputs LP8 SP6 - 4 outputs LP8W J3 34 Package Outline Drawings Revised 4/18/95 35 Revised 8/29/97 ISOTOP(R) is a registered trademark of SGS Thomson Visit our web site at: www.advancedpower.com Sales Offices Eastern North America Tel: (978) 664-8629 Fax: (978) 664-8657 E-Mail: rsmeast@advancedpower.com Western North America Tel: (541) 382-8028 Fax: (541) 388-0364 E-Mail: rsmwest@advancedpower.com Asia-Pacific Rim Tel: +866-2-2760-0270 Fax: +866-2-2760-0390 E-Mail: rsmasia@advancedpower.com Europe, Middle East, Africa Tel: 33-557 92 15 15 Fax: 33-556 47 97 61 E-Mail: rsmeurope@advancedpower.com South & Central America Tel: (541) 382-8028 Fax: (541) 388-0364 E-Mail: rsmwest@advancedpower.com APT reserves the right to change, without notice, the specifications and information contained herein. March 2004 http://store.iiic.cc/