1
“COOLMOS” comprise a new family of transistors developed by Infineon Technologies AG.
“COOLMOS” is a trademark of Infineon Technologies AG”
Advanced Power Technology
Technology… Beginning in 1984 with the introduction of Power MOS IV®, APT has maintained a
position at the forefront of power semiconductor technology. Our focus is on the high voltage, high
power and high performance segments of this market. Our commitment is to maintain and enhance
this position as a technological leader in MOS controlled devices and Diodes and to deliver products
which contribute to our customers’ success in delivering higher performance power systems.
Service… Outstanding technology is only part of the story. A global network of stocking distributors,
representatives, applications engineers, and web tools are in place to support all phases of your
product design, evaluation and procurement activities. In a world which demands superior execution,
we’ve won numerous awards as a service leader.
Quality… Our commitment is to excellence in all things we do. Whether you are evaluating the
quality of our products, our technical assistance, our customer service or the quality of our internal
communications systems, excellence is our standard. Continuous improvement is fundamental to
our business!
CONTENTS
HIGH VOLTAGE SMPS TRANSISTORS Page No.
IGBTs (Insulated Gate Bipolar Transistors) ...............................................4-6
Low Loss High Performance Power MOS 7® MOSFETs ..............................7-9
Standard Power MOS V® MOSFETs ........................................................ 10-12
COOLMOSTM MOSFETs ............................................................................... 12
DIODES
Silicon Carbide (SiC) Schottky Diodes .......................................................13
Fast Recovery Epitaxial Diodes (FREDs) ................................................14-16
High Voltage Schottky Diodes .................................................................... 16
HIGH VOLTAGE LINEAR MOSFETs ..........................................................17
CUSTOM PRODUCTS ..............................................................................17
HERMETIC AND HI-REL PRODUCTS ......................................................17
DIE PRODUCTS .......................................................................................17
POWER MODULES
IGBTs (Insulated Gate Bipolar Transistors) .........................................19-25
MOSFETs ................................................................................................ 26-31
Diodes ........................................................................................................ 31
Custom .......................................................................................................32
PACKAGE OUTLINE DRAWINGS ........................................................33-35
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3
Design Tools available at www.advancedpower.com
A Full Line-Up of the very best
in High Voltage, High Power,
High Performance Transistors
for Your SMPS Applications
Product Type
Product Family
Description
Blocking Voltage, volts
Fast Anti-Parallel
Diode Operation
Metal Gate/Planar
Stripe
Poly Gate/Planar Cell
up to 200 kHz
PT Type
IGBTs
NPT Type
IGBTs
Conventional
MOSFETs
Super Junction
MOSFETs
Our fastest IGBTs
that can replace
MOSFETs in many
high frequency
SMPS applications
including soft
switching
Short circuit rated
IGBTs for
moderate to high
frequency SMPS,
UPS, and motor
drive applications
Best-in-class for
on-resistance, gate
charge and noise
immunity
Lowest specific on-
resitance of any
MOSFETs
300, 600, 900, 1200 600, 1200 100-1400 600, 800
Combi Combi FREDFET Add APT FRED &
series Schottky
YES
YES
YES
YES
• Fast–50 kHz Max
• Thunderbolt®
–100 kHz Max
• Power MOS V
•
• COOLMOS™
•
• Transistor Quick Pick web tool to choose the right transistor for your application
• Application Notes - Examples Include:
- IGBT, MOSFET, and Diode Tutorial
- Parallel Connection of Power Electronic Devices
- Making Use of Gate Charge Information In MOSFET and IGBT Data Sheets
- Optimizing MOSFET and IGBT Gate Current to Minimize dv/dt Induced
Failures in SMPS Circuits
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4
POWER MOS 7® IGBTs
THUNDERBOLT® & FAST IGBTs
Insulated Gate Bipolar Transistors (IGBTs)
The IGBT (Insulated Gate Bipolar Transistor) is the combination
of a MOSFET and a Bipolar Transistor in a single chip and as
such combines the best attributes of each type of transistor... The
Bipolar Transistor attributes portion allows operation at high
on-state current densities with a low on-state voltage drop and the
MOSFET structure attributes allows for ease of gate control. The
IGBT advantage in current density over MOSFETs facilitates higher
output power at equal chip size, provides for smaller and lower
cost components, and allows for smaller more compact and higher
power density designs. The die size for the IGBT is often 1 or 2 die
sizes smaller than a MOSFET at equal current solution which means
lower cost than MOSFETs.
The characteristics of the IGBT are determined by the technology
used (materials, process, design). IGBTs can generally be classified
into two basic technologies PT (Punch Through) and NPT (Non-
Punch Through).
There are 3 APT Product Families of IGBTs:
PT 1) Power MOS 7® PT IGBT Family… These devices are
available in 300, 600, 900, and 1200 volt for operation up
to 200 kHz hard switching.
NPT 2) Thunderbolt® NPT IGBT Family… 600 volt only, these
devices are capable of operation 100 kHz Max in
hard switching applications.
3) Fast NPT IGBT Family… 600 and 1200 volt devices,
designed for operation 50 kHz Max in hard switching
applications.
For soft switching topologies these maximum operating frequencies
will be higher.
IGBT products offered by APT utilize offers both NPT and PT
technologies to cover the widest range of applications and design
requirements. They IGBTs can be used as a cost effective alternative
to MOSFETs in many applications with high efficiency, improved
power density, and lower cost.
Our latest generation of 300, 600, 900, and 1200 volt PT-
Type IGBTs utilizing our advanced proprietary POWER MOS 7®
Technology. The 300V parts are designed to replace 200-300V
MOSFETs in PDP and alternative energy inverters. The 600 volt
IGBTs are designed to replace 500V/600V MOSFETs, the 900 volt
IGBTs to replace 800 volt MOSFETs, and the 1200 volt IGBTs are
designed to replace 1000V/1200V MOSFETs in switch mode power
supply (SMPS), power factor correction (PFC), and other high-power
applications. For all IGBT’s, the gate-drive voltage requirement is
similar to a MOSFET. This allows larger die size power MOSFETs, or
multiple MOSFETs in parallel to be replaced with just one POWER
MOS 7® IGBT.
Features and Benefits of POWER MOS 7® Technology IGBTs
Metal Gate… these IGBTs utilize a proprietary planar stripe metal
gate design providing internal chip gate resistance one to two orders
of magnitude lower than comparable industry standard polysilicon
gate devices. This enables very uniform and fast switching across the
entire chip with uniform heat distribution. The metal gate minimizes
chip gate resistance variation from batch to batch providing the user
with more consistent switching performance. In addition, the low
chip gate resistance allows the designer maximum range of switching
speed and increases the immunity to dv/dt induced turn-on.
Higher Threshold Voltage and Reduced “Miller Capacitance”…
this provides for increased noise and spurious turn-on immunity and
eliminates the need for a negative gate voltage supply for turn-off.
This eliminates the need for an auxiliary power supply and simplifies
the use of gate driver ICs.
Low On-State Voltage… conduction losses are dramatically lower,
especially at high temperatures and high currents. Conduction
losses at operating currents and temperatures are ~1/8 that of a
conventional MOSFET and ~1/3 that of a superjunction MOSFET.
Low Gate Charge… this reduces gate drive power losses and
enables fast switching.
Low Thermal Resistance… this maximizes power dissipation
capabilities or lowers junction temperature for improved
reliability.
Short Tail Current Ideal for Soft Switching…
Combis… POWER MOS 7® IGBTs are available co-packaged
with a fast-recovery, antiparallel diode optimized for low reverse
recovery charge, further enhancing performance in power switching
applications. Co-packaging the POWER MOS 7® IGBTs with these
rectifiers reduces EMI, switching losses, and conduction losses, while
reducing component count and cost.
Low Switching Energies… this enables very low switching losses.
In combination with the low conduction losses and the low
thermal resistance, new levels of high frequency capability for a
given current are achieved. Data sheets now include a graph of
frequency vs. current for an IGBT Combi. This graph comprehends
both conduction and switching losses and allows the designer to
properly select the best device for the application.
SiC Combi’s.. Power MOS 7® IGBTs are now available co-packaged
with SiC schottky diodes for the ultimate in performance. Switching
energies are up to 50% lower for the SiC/IGBT combi than those
parts using conventional Si diodes.
In many applications these IGBTs can be used in moderate to high
frequency SMPS applications. Also, the NPT technology has some
added benefits over the PT type IGBTs.
Features and Benefits of NPT IGBTs
Ruggedness… NPT Technology is more rugged due to the wider
base and lower gain of the PNP bipolar transistor. APT NPT IGBTs
are short circuit, avalanche energy, and RBSOA rated while PT
POWER MOS 7® IGBTs with higher switching frequency capability
are RBSOA rated.
Paralleling… This is easier with NPT technology due to the positive
temperature coefficient of VCE(ON) similar to a MOSFET. PT POWER
MOS 7® IGBTs from APT have a slightly negative temperature
coefficient and can be paralleled but may require added precautions,
such as careful thermal matching or VCE(ON) sorting.
High Temperature Operation…
NPT - The turn-off speed and switching losses remain relatively
constant over the entire operating temperature range.
PT - The turn-off speed and switching losses increase with
temperature, but are extremely low due to the short tail current.
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5
Up To 200 kHz
BVCES VCE(ON) IC2 Package
Volts 25OC (Typ) 100 - 110o C Part Number Style
1200 3.3 20 APT13GP120K
900 3.2 21 APT15GP90K TO-220
600 2.2 27 APT15GP60K
2.2 20 APT11GP60K
300 1.6 32 APT32GU30K
1200 3.3 20 APT13GP120B
3.3 33 APT25GP120B
3.3 46 APT35GP120B
3.3 54 APT45GP120B
900 3.2 21 APT15GP90B TO-247
3.2 36 APT25GP90B
3.2 50 APT40GP90B
600 2.2 27 APT15GP60B
2.2 49 APT30GP60B
2.2 62 APT40GP60B
2.2 72 APT50GP60B
300 1.6 32 APT32GU30B
1.6 60 APT60GU30B
1.6 83 APT83GU30B
1200 3.3 91 APT75GP120B2
600 2.2 96 APT65GP60B2 T-MAXTM
2.2 100 APT80GP60B2
1200 3.3 29 APT35GP120J
3.3 34 APT45GP120J
3.3 57 APT75GP120J
900 3.2 32 APT40GP90J ISOTOP®
600 2.2 40 APT40GP60J
2.2 46 APT50GP60J
2.2 60 APT65GP60J
2.2 68 APT80GP60J
1200 3.3 20 APT13GP120BDF1
3.3 33 APT25GP120BDF1
900 3.2 21 APT15GP90BDF1 TO-247
3.2 36 APT25GP90BDF1
600 2.2 27 APT15GP60BDF1
2.2 49 APT30GP60BDF1
1200 3.3 46 APT35GP120B2DF2
3.3 54 APT45GP120B2DF2 T-MAXTM
900 3.2 50 APT40GP90B2DF2
600 2.2 62 APT40GP60B2DF2
2.2 72 APT50GP60B2DF2
600 2.2 96 APT65GP60L2DF2 264-MAXTM
1200 3.3 29 APT35GP120JDF2
3.3 34 APT45GP120JDF2
3.3 57 APT75GP120JDF3
900 3.2 32 APT40GP90JDF2
600 2.2 31 APT30GP60JDF1 ISOTOP®
2.2 40 APT40GP60JDF1
2.2 46 APT50GP60JDF2
2.2 60 APT65GP60JDF2
2.2 68 APT80GP60JDF3
1200 3.3 20 APT13GP120BSC
600 2.0 15 APT15GT60BSC TO-247
2.2 27 APT15GP60BSC
2.2 49 APT30GP60BSC
• PT Technology
• Ultralow Gate
Resistance and
Charge
• Highest
Frequency IGBTs
• Ultralow
Switching Losses
• Hard and Soft
Switching
• Low Cost
Alternative to
MOSFETs
• Excellent Noise
Immunity
• Single Supply
Gate Drive
• Combi with High
Speed Diode
TO-220[K]
TO-247[B]
ISOTOP®[J]
SOT-227
264-MAX TM[L2]
T-MAX™[B2]
C
E
G
NEW!
POWER MOS 7®
Insulated Gate Bipolar Transistors (IGBTs)
Combi (IGBT & “DF Series” FRED)
SINGLE
COMBI (IGBT & SILICON CARBIDE SCHOTTKY DIODE )
6
100 kHz Max
50 kHz Max
• NPT Technology
• Short Circuit
Rated
• Moderate to High
Frequency
• Easy Paralleling
• Single Supply
Gate Drive
• Combi with low
VF Diode
• NPT Technology
• Short Circuit
Rated
• Low to Moderate
Frequency
• Lowest
Conduction Loss
• Easy Paralleling
• Single Supply
Gate Drive
• Combi with low
VF Diode
BVCES VCE(ON) IC2 Package
Volts 25OC (Typ) 90-110o C Part Number Style
600 2.0 8 APT8GT60KR
2.0 12 APT12GT60KR
2.0 15 APT15GT60KR TO-220
1.75 20 APT20GT60KR
2.0 30 APT30GT60KR
600 2.0 12 APT12GT60BR
2.0 15 APT15GT60BR
2.0 20 APT20GT60BR TO-247
2.0 30 APT30GT60BR
2.15 40 APT40GT60BR
2.2 60 APT60GT60BR
600 2.0 60 APT60GT60JR ISOTOP®
600 2.0 15 APT15GT60BRD TO-247
2.0 30 APT30GT60BRD
600 2.0 60 APT60GT60JRD ISOTOP®
1200 2.5 11 APT11GF120KR TO-220
2.7 20 APT20GF120KR
1200 2.7 20 APT20GF120BR
2.7 33 APT33GF120BR TO-247
600 2.1 50 APT50GF60BR
1200 2.9 50 APT50GF120B2R T-MAXTM
600 1.6 100 APT100GF60B2R
1200 3.5 50 APT50GF120LR TO-264
600 1.6 100 APT100GF60LR
600 1.6 100 APT100GF60JR ISOTOP®
1200 2.5 11 APT11GF120BRD1 TO-247
2.7 20 APT20GF120BRD
1200 2.7 33 APT33GF120B2RD T-MAXTM
600 2.1 50 APT50GF60B2RD
1200 2.7 33 APT33GF120LRD TO-264
600 2.1 50 APT50GF60LRD
1200 2.9 40 APT40GF120JRD
2.9 50 APT50GF120JRD ISOTOP®
2.1 60 APT60GF120JRD
600 1.6 100 APT100GF60JRD
TO-220[K]
TO-247[B]
T-MAX™[B2]
TO-264[L]
ISOTOP®[J]
SOT-227
C
E
G
THUNDERBOLT®
FAST
Insulated Gate Bipolar Transistors (IGBTs)
SINGLE
Combi (IGBT & “D” Series FRED)
SINGLE
Combi (IGBT & “D” Series FRED)
7
Power MOS 7® MOSFETs / FREDFETs
Our latest generation of conventional MOSFETs with the lowest
on-resistance, gate charge, and total losses for a given footprint. ....
Designed to meet the most advanced SMPS design requirements for
higher reliability, power density, and efficiency, this new generation
of MOSFETs dramatically lowers the two largest contributors of
power losses in SMPS applications....
LOW CONDUCTION LOSSES…
On-Resistance (RDS(ON)) has been lowered by up to 30% and thermal
resistance lowered by up to 10% for any given chip size.
LOW SWITCHING LOSSES…
Combining ultra low gate charge and our proprietary aluminum
metal gate structure results in a MOSFET capable of extremely fast
switching and very low switching losses. Total gate charge (Qg) and
“Miller” gate charge (Qgd) have been reduced by up to 60%. Like
all APT Power MOSFETs, Power MOS 7® utilizes a low resistance
aluminum metal gate structure. This allows for faster gate signal
propagation than is possible with conventional polysilicon gate
structures. In addition, Power MOS 7® employs new gate design
layouts for extremely low internal chip equivalent gate resistances
(EGR) that are up to an order of magnitude lower than competitive
devices and provides for very uniform switching across the entire
chip. This provides for faster switching speeds, up to 50% faster
than our previous generation of Power MOSFETs.
THE RESULT… higher efficiency, and more power in less space.
The lowest power loss Figure of Merit (FOM) for conventional high
power MOSFETs in the industry -
FOM = RDS(ON) X Qg
In addition, like all APT Power MOSFETs, Power MOS 7®
devices are extremely rugged…
AVALANCHE ENERGY RATED… All Power MOS 7® MOSFETs are
100% tested and guaranteed for avalanche energy.
HIGH GATE RUPTURE VOLTAGE… Thick high quality gate oxide
allows for specification of ± 30V continuous operation and ± 40V
transient operation gate voltage.
and Power MOS 7® provides industry leading spurious turn-on
immunity…
HIGH NOISE IMMUNITY… Higher Gate Threshold voltage - Vgs(th),
3 volts minimum.
REDUCED SHOOT THROUGH SUSCEPTIBILITY…
increased gate threshold voltage -Vgs(th), ultralow
equivalent gate resistance (EGR) and high input capacitance
ratio (Qgs/Qgd) results in an Industry leading high figure
of Merit (FOM) -
FOM = Vgs(th) X Qgs/Qgd
HIGH COMMUTATING dv/dt CAPABILITY… from defect
tolerant linear cell design and very low parasitic bipolar base
resistance.
550 AND 1100 VOLT PRODUCTS for added voltage headroom to
reduce SEB failures and minimize conduction loss tradeoff. Ideal for
higher power designs of existing converter topologies where increased
field failure rates are a concern and for existing topologies and power
levels where converter field failure rates need to be reduced.
Two families of POWER MOS 7® MOSFETs are offered:
MOSFETs–for applications not utilizing the intrinsic
body drain diode
FREDFETs–for applications utilizing the intrinsic body
drain diode. These MOSFETs have the body drain diode
optimized for fast reverse recovery time (trr) and improved
commutating dv/dt capability by special silicon lifetime
control processes.
APT POWER MOS 7® FREDFETs have all the improved features and
benefits of APT POWER MOS 7® MOSFETs and in addition…
• Faster Intrinsic Diode Reverse Recovery…The reverse
recovery time (trr) has been reduced thereby eliminating
the external FRED and Schottky rectifiers in certain circuit
configurations.
• Improved Ruggedness… The ruggedness of the intrinsic
diode has also been improved, allowing for improved
commutating dv/dt ratings.
CUSTOM FREDFETS FOR HIGH TEMPERATURE OPERATION…
The lifetime process utilized for the FREDFETs in this catalog is a
proven industry standard. In some designs there are requirements for
improved high temperature device performance and this can be made
available using our proprietary platinum lifetime control process.
Our platinum process provides the high temperature advantages
of soft recovery, lower leakage current, and more temperature
independent performance.
APPLICATIONS FOR FREDFETs… Power MOS 7® FREDFETs should
be specified under the following conditions:
• Whenever the intrinsic body drain diode of the MOSFET is expected
to carry forward current.
• In soft switched circuits, where the body diode carries
current.
8
Part Numbers for D3
packages - replace ”B” with
“S” in part number
Part Numbers for TO-264
packages - replace”B2” with
“L” in part number
BVDSS RDS(ON) ID(Cont) MOSFET P/N FREDFET P/N Package
Volts Ohms Amps (low trr MOSFET) Style
1200 4.700 3.5 - - - APT1204R7KFLL
1000 3.000 4 APT1003RKLL APT1003RKFLL
1200 4.700 3.5 - - - APT1204R7BFLL
1.400 9 - - - APT1201R4BFLL
1.200 12 - - - APT1201R2BFLL
1100 1.200 10 - - - APT1101R2BFLL
1.000 13 - - - APT1101RBFLL
1000 3.000 4 APT1003RBLL APT1003RBFLL
1.600 8 - - - APT1001R6BFLL
0.900 12 APT10090BLL APT10090BFLL
0.780 14 APT10078BLL APT10078BFLL
800 0.520 15 APT8052BLL APT8052BFLL
0.430 20 APT8043BLL APT8043BFLL
600 0.380 17 APT6038BLL APT6038BFLL
0.290 21 APT6029BLL APT6029BFLL
0.250 24 APT6025BLL APT6025BFLL
0.210 29 APT6021BLL APT6021BFLL
550 0.310 19 - - - APT5531BFLL
0.230 24 - - - APT5523BFLL
0.180 31 - - - APT5518BFLL
500 0.240 22 APT5024BLL APT5024BFLL
0.180 27 APT5018BLL APT5018BFLL
0.160 30 APT5016BLL APT5016BFLL
0.140 35 APT5014BLL APT5014BFLL
300 0.061 54 APT30M61BLL APT30M61BFLL
0.075 44 APT30M75BLL APT30M75BFLL
200 0.036 65 APT20M36BLL APT20M36BFLL
0.034 74 APT20M34BLL APT20M34BFLL
1200 0.670 18 - - - APT12067B2FLL
0.570 22 - - - APT12057B2FLL
1100 0.580 20 - - - APT11058B2FLL
0.440 26 - - - APT11044B2FLL
1000 0.450 23 APT10045B2LL APT10045B2FLL
0.350 28 APT10035B2LL APT10035B2FLL
800 0.240 31 APT8024B2LL APT8024B2FLL
0.200 38 APT8020B2LL APT8020B2FLL
600 0.170 35 APT6017B2LL APT6017B2FLL
0.130 43 APT6013B2LL APT6013B2FLL
0.100 54 APT6010B2LL APT6010B2FLL
550 0.130 41 - - - APT5513B2FLL
0.100 49 - - - APT5510B2FLL
0.085 59 - - - APT55M85B2FLL
500 0.100 46 APT5010B2LL APT5010B2FLL
0.075 57 APT50M75B2LL APT50M75B2FLL
0.065 67 APT50M65B2LL APT50M65B2FLL
300 0.036 84 APT30M36B2LL APT30M36B2FLL
0.030 100 APT30M30B2LL APT30M30B2FLL
200 0.020 100 APT20M20B2LL APT20M20B2FLL
0.016 100 APT20M16B2LL APT20M16B2FLL
TO-247[B]
TO-220[K]
D3 PAK[S]
TO-268
T-MAX™[B2]
TO-264[L]
Power MOS 7® MOSFETs / FREDFETs
9
BVDSS RDS(ON) ID(Cont) MOSFET P/N FREDFET P/N Package
Volts Ohms Amps (low trr MOSFET) Style
1200 0.400 30 - - - APT12040L2FLL
1000 0.260 38 APT10026L2LL APT10026L2FLL
800 0.140 52 APT8014L2LL APT8014L2FLL
600 0.075 73 APT60M75L2LL APT60M75L2FLL
550 0.065 78 - - - APT55M65L2FLL
500 0.050 89 APT50M50L2LL APT50M50L2FLL
1200 0.670 17 - - - APT12067JFLL
0.570 19 - - - APT12057JFLL
0.400 24 - - - APT12040JFLL
0.310 30 - - - APT12031JFLL
1100 0.580 18 - - - APT11058JFLL
0.440 22 - - - APT11044JFLL
0.260 30 - - - APT11026JFLL
1000 0.450 21 APT10045JLL APT10045JFLL
0.350 25 APT10035JLL APT10035JFLL
0.260 30 APT10026JLL APT10026JFLL
0.210 37 APT10021JLL APT10021JFLL
800 0.240 29 APT8024JLL APT8024JFLL
0.200 33 APT8020JLL APT8020JFLL
0.140 42 APT8014JLL APT8014JFLL
0.110 51 APT8011JLL APT8011JFLL
600 0.170 31 APT6017JLL APT6017JFLL
0.130 39 APT6013JLL APT6013JFLL
0.100 47 APT6010JLL APT6010JFLL
0.075 58 APT60M75JLL APT60M75JFLL
0.060 70 APT60M60JLL APT60M60JFLL
550 0.130 35 - - - APT5513JFLL
0.100 44 - - - APT5510JFLL
0.085 51 - - - APT55M85JFLL
0.065 63 - - - APT55M65JFLL
0.050 77 - - - APT55M50JFLL
500 0.100 44 APT5010JLL APT5010JFLL
0.075 51 APT50M75JLL APT50M75JFLL
0.065 58 APT50M65JLL APT50M65JFLL
0.050 71 APT50M50JLL APT50M50JFLL
0.038 91 APT50M38JLL APT50M38JFLL
300 0.036 76 APT30M36JLL APT30M36JFLL
0.030 88 APT30M30JLL APT30M30JFLL
0.017 135 APT30M17JLL APT30M17JFLL
200 0.020 104 APT20M20JLL APT20M20JFLL
0.011 176 APT20M11JLL APT20M11JFLL
BVDSS RDS(ON) ID(Cont) BOOST
Volts Ohms Amps MOSFET P/N CONFIGURATION
500 0.100 44 APT5010JLLU2
0.075 51 APT50M75JLLU2
264-MAX TM[L2]
ISOTOP®[J]
SOT-227
(ISOLATED BASE)
Power MOS 7® MOSFETs / FREDFETs
MOSFET/FRED (“Combi Products”)
10
Introduced in 1997 and designed to meet the most advanced
SMPS design requirements for higher reliability, power density,
and efficiency at that time, Power MOS V® can still provide the best
trade-off between performance and cost in some applications. Like
all APT Power MOSFETs, Power MOS V® utilizes a low resistance
aluminum metal gate structure. This allows for faster gate signal
propagation than is possible with conventional polysilicon gate
structures. The result is extremely low internal chip equivalent gate
resistances (EGR) that are up to an order of magnitude lower than
competitive devices which enables uniform high speed switching
across the entire chip.
Two families of POWER MOS V® MOSFETs are offered:
• MOSFETs – for applications not utilizing the intrinsic body
drain diode
• FREDFETs - for applications utilizing the intrinsic body drain
diode. These MOSFETs have the body drain diode optimized for
fast reverse recovery time (trr) and improved commutating dv/dt
capability by special silicon lifetime control processes.
APT POWER MOS V® FREDFETs have all the improved features and
benefits of APT POWER MOS V® MOSFETs and in addition…
• Faster Intrinsic Diode Reverse Recovery .... The reverse recovery
time (trr) has been reduced thereby eliminating the external FRED
and Schottky rectifiers in certain circuit configurations.
• Improved Ruggedness… The ruggedness of the intrinsic diode
has also been improved, allowing for improved commutating
dv/dt ratings.
CUSTOM FREDFETS FOR HIGH TEMPERATURE OPERATION…
The lifetime process utilized for the FREDFETs in this catalog is a
proven industry standard. In some designs there are requirements for
improved high temperature device performance and this can be made
available using our proprietary platinum lifetime control process.
Our platinum process provides the high temperature advantages
of soft recovery, lower leakage current, and more temperature
independent performance.
APPLICATIONS FOR FREDFETS… Power MOS V® FREDFETs should
be specified under the following conditions:
• Whenever the intrinsic body drain diode of the MOSFET is
expected to carry forward current.
• In soft switched circuits, where the body diode carries
current.
Part Numbers for D3
packages - replace ”B”
with “S” in part number
BVDSS RDS(ON) ID(Cont) MOSFET P/N FREDFET P/N Package
Volts Ohms Amps (low trr MOSFET) Style
1200 1.600 8 - - - APT1201R6BVFR
1.500 10 - - - APT1201R5BVFR
1000 1.000 11 APT1001RBVR APT1001RBVFR
0.860 13 APT10086BVR APT10086BVFR
800 0.750 12 APT8075BVR APT8075BVFR
0.650 13 APT8065BVR APT8065BVFR
0.560 16 APT8056BVR APT8056BVFR
600 0.400 16 APT6040BVR APT6040BVFR
0.350 18 APT6035BVR APT6035BVFR
0.300 21 APT6030BVR APT6030BVFR
0.250 25 APT6025BVR APT6025BVFR
500 0.280 20 APT5028BVR APT5028BVFR
0.240 22 APT5024BVR APT5024BVFR
0.200 26 APT5020BVR APT5020BVFR
0.170 30 APT5017BVR APT5017BVFR
0.150 32 APT5015BVR APT5015BVFR
TO-247[B]
D3 PAK[S]
TO-268
Power MOS V® MOSFETs / FREDFETs
11
Part Numbers for D3
packages - replace ”B”
with “S” in part number
Part Numbers for TO-264
packages - replace”B2” with
“L” in part number
BVDSS RDS(ON) ID(Cont) MOSFET P/N FREDFET P/N Package
Volts Ohms Amps (low trr MOSFET) Style
400 0.200 23 - - - APT4020BVFR
0.160 27 - - - APT4016BVFR
0.140 28 - - - APT4014BVFR
0.120 37 - - - APT4012BVFR
300 0.085 40 APT30M85BVR APT30M85BVFR
0.070 48 APT30M70BVR APT30M70BVFR
200 0.045 56 APT20M45BVR APT20M45BVFR
0.040 59 APT20M40BVR APT20M40BVFR
0.038 67 APT20M38BVR APT20M38BVFR
100 0.025 75 APT10M25BVR APT10M25BVFR
0.019 75 APT10M19BVR APT10M19BVFR
1200 0.800 16 - - - APT12080B2VFR
0.600 20 - - - APT12060B2VFR
1000 0.500 21 APT10050B2VR APT10050B2VFR
0.400 26 APT10040B2VR APT10040B2VFR
800 0.300 27 APT8030B2VR APT8030B2VFR
0.240 33 APT8024B2VR APT8024B2VFR
600 0.200 30 APT6020B2VR APT6020B2VFR
0.150 38 APT6015B2VR APT6015B2VFR
0.110 49 APT6011B2VR APT6011B2VFR
500 0.140 37 APT5014B2VR APT5014B2VFR
0.100 47 APT5010B2VR APT5010B2VFR
0.085 56 APT50M85B2VR APT50M85B2VFR
0.080 58 APT50M80B2VR APT50M80B2VFR
400 0.070 57 - - - APT40M70B2VFR
300 0.040 76 APT30M40B2VR APT30M40B2VFR
200 0.022 100 APT20M22B2VR APT20M22B2VFR
0.018 100 APT20M18B2VR APT20M18B2VFR
100 0.011 100 - - - APT10M11B2VFR
0.009 100 - - - APT10M11B2VFR
1200 0.450 26 - - - APT12045L2VFR
1000 0.300 33 APT10030L2VR APT10030L2VFR
800 0.180 43 APT8018L2VR APT8018L2VFR
600 0.080 65 APT60M80L2VR APT60M80L2VFR
500 0.060 77 APT50M60L2VR APT50M60L2VFR
1400 0.500 23 - - - APT14050JVFR
1200 0.800 15 - - - APT12080JVFR
0.400 26 - - - APT12040JVFR
1000 0.500 19 APT10050JVR APT10050JVFR
0.430 22 APT10043JVR APT10043JVFR
0.250 34 APT10025JVR APT10025JVFR
800 0.300 25 APT8030JVR APT8030JVFR
0.280 28 APT8028JVR APT8028JVFR
0.150 44 APT8015JVR APT8015JVFR
600 0.150 35 APT6015JVR APT6015JVFR
0.130 40 APT6013JVR APT6013JVFR
0.075 62 APT60M75JVR APT60M75JVFR
500 0.100 44 APT5010JVR APT5010JVFR
0.085 50 APT50M85JVR APT50M85JVFR
0.060 63 APT50M60JVR APT50M60JVFR
0.050 77 APT50M50JVR APT50M50JVFR
ISOTOP®[J]
SOT-227
(ISOLATED BASE)
TO-264[L]
TO-247[B] D3 PAK[S]
T-MAX™[B2]
264-MAX TM[L2]
Power MOS V® MOSFETs / FREDFETs
12
BVDSS RDS(ON) ID(Cont) Package
Volts Ohms Amps MOSFET P/N Style
800 0.450 11 APT11N80KC3 TO-220
800 0.450 11 APT11N80BC3
0.290 17 APT17N80BC3 TO-247
600 0.190 21 APT20N60BC3
0.095 40 APT40N60BC3
0.070 47 APT47N60BC3
800 0.290 17 APT17N80SC3
600 0.190 20 APT20N60SC3 D3
0.070 47 APT47N60SC3
800 0.145 34 APT34N80B2C3 T-MAXTM
800 0.145 34 APT34N80LC3 TO-264
800 0.145 31 APT31N80JC3 ISOTOP®
600 0.035 77 APT77N60JC3
BVDSS RDS(ON) ID(Cont) MOSFET P/N FREDFET P/N Package
Volts Ohms Amps (low trr MOSFET) Style
400 0.070 53 - - - APT40M70JVFR
0.035 93 - - - APT40M35JVFR
300 0.040 70 APT30M40JVR APT30M40JVFR
0.019 130 APT30M19JVR APT30M19JVFR
200 0.022 97 APT20M22JVR APT20M22JVFR
0.019 112 APT20M19JVR APT20M19JVFR
0.011 175 APT20M11JVR APT20M11JVFR
100 0.011 144 - - - APT10M11JVFR
0.007 225 - - - APT10M07JVFR
BVDSS RDS(ON) ID(Cont)
Volts Ohms Amps MOSFET P/N CONFIGURATION
500 0.100 44 APT5010JVRU2
0.100 44 APT5010JVRU3
D3 PAK[S]
TO-268
TO-247[B]
TO-264[L]
ISOTOP®[J]
SOT-227
(ISOLATED BASE)
T-MAX™[B2]
TO-220[K]
Boost (U2)
Buck (U3)
ISOTOP®[J]
SOT-227
(ISOLATED BASE)
Power MOS V® MOSFETs / FREDFETs
COOLMOSTM MOSFETs
MOSFET/FRED (“Combi Products”)
“COOLMOS” comprise a new family of transistors developed by Infineon Technologies AG.
“COOLMOS” is a trademark of Infineon Technologies AG”
13
IF VF (volts) Package
Volts Amps Typ 25OC Part Number Configuration Style
5 1.6 APT5SC120K Single
1200 5 1.6 APT10SC120KCT Center Tap TO-220
10 1.6 APT5SC120K Single
6 1.6 APT6SC60K Single
6 1.6 APT6SC60KCT Center Tap
10 1.6 APT10SC60K Single TO-220
600 10 1.6 APT10SC60KCT Center Tap
20 1.6 APT20SC60K Single
6 1.6 APT6SC60SA Single D-2
10 1.6 APT10SC60SA Single
• Custom
Configurations
Available
• Hermetic
Packages
Available
• See Page 5 for
SiC Combi’s
NEW!
Schottky Barrier–Majority Carrier Only
Wide Energy Gap
High Breakdown Electric Field
High Termal Conductivity
High Pulse Capability
Thermally Stable Paralleling
BENEFITS
Switching Losses Nearly Eliminated -ZERO RECOVERY™
Greatly Reduced Turn-On Loss In Switch
Improved Overall Efficiency
Enables Higher Frequency Operation
Simplify or Eliminate Snubber Circuits
High Temperature Operation
Low Leakage Current
Radiation Hardness
Low Resistance–High Power Density
Reliable High Power Operation
FEATURES
Positive VF Temperature Coefficient
Silicon Carbide
Silicon Carbide Schottky Diodes
Reverse Recovery
Current
Time
ZERO RECOVERY™
APPLICATIONS -
• PFC and Forward Topologies
• Hard or Soft Switched Topologies
• High Frequency, High Performance
ZERO RECOVERY™ is a trademark of Cree Inc.
Silicon Carbide (SiC) Schottky Diodes are the latest development in
high power diode technology. SiC offers superior dynamic and thermal
performance over conventional silicon power diodes. The SiC has
essentially no reverse recovery and stable switching characteristics over a
wide temperature range. With a 175oC TJ rating, positive VF temperature
coefficient, and extremely fast switching, enables designs with superior
efficiencies and reduced size. When co-packaged with APT’s Power MOS7®
IGBTs switching energies are up to 50% lower than those parts using Si
diodes.
http://store.iiic.cc/
14
Current (A)
Time (ns)
DS
DF
D
VF’ Forward Voltage Drop
DS
DF
D
Switching Time or Qrr {reverse recovery charge}
DQ
NEW!
Fast Recovery Epitaxial Diodes (FREDs)
Figure 1 below shows the typical tradeoff between reverse recovery
switching times (trr) and forward voltage drop (VF) for a FRED – lower
switching times (faster switching speeds) result in higher forward
voltage drop. The specific process and design define the curve. A
critical part of the manufacturing process is the lifetime control – the
lower the material lifetime the lower the switching times (move left
and up the curve). For APT the lifetime control technique is a pro-
prietary platinum diffusion process – the more platinum the faster
the switching times. The reverse recovery times are directly related
to the reverse recovery charge. APT offers three families or “series” of
high performance FRED products which are represented by specific
points on the trade off curve of Figure 1.
Figure 2 shows a relative comparison of the reverse recovery
waveforms for each of the 3 “series” of products.
Our proprietary platinum lifetime control process results
in performance advantages compared to FREDs built with
alternative processes for lifetime control:
• High Temperature Capability - less degradation of performance
at high temperatures allowing for increased maximum junction
temperature for safe operation. Junction temperature
maximum is 150 oC without concern for excessively high
leakage currents and thermal runaway.
• Softer Recovery – to minimize EMI
• Very Fast switching times (trr) along with extremely low reverse
recovery current (IRRM) and reverse recovery charge (Qrr) for a
given forward voltage (VF).
The “D” and “DS” series of FREDs are currently offered as
discrete products. The “DF” series FREDs are only offered in
the Power MOS 7® IGBT combis.
Figure 2
Figure 1
Coming in 2nd Half of 2004: New DQ Series of FREDs
APT is pleased to announce the next step forward in FRED technology. The DQ series of products is optimized for continuous conduction
mode PFC and other hard switched high performance power supplies. Ultra low reverse recovery charge circumvents high power loss
in the PFC switch, enabling higher frequency operation for lower system cost. A well balanced tradeoff between forward voltage and
reverse characteristics result in low power loss in the diode as well. The DQ series diodes have very soft recovery under all operating
conditions, greatly reducing EMI and the losses and cost associated with filters and snubbers required with snappy diodes. High leakage
current that plagues some low recovery charge diodes is eliminated with APT’s proprietary platinum minority carrier life time control.
APT’s proprietary platinum processing results in superior temperature stability, enabling easy paralleling and safe operation up to the
175 oC rated maximum junction temperature.
The first DQ series products available will be 600 Volt followed by other voltages. The current ratings are 8, 15, 30, 60, and 100 Amperes.
These products will be available in all of the standard package configurations of APT’s existing D series FRED products.
http://store.iiic.cc/
15 * Current rating per leg for common cathode configuration
Part Numbers for Parallel
Configuration replace 30, 60,
or 100 with 31, 61, or 101.
Example: 2X30D120J
becomes 2X31D120J
Part Numbers for D3
packages - replace ”B”
with “S” in part number
IF VF (volts) trr(ns) Package
Volts Amps Typ 25OC Typ 25OC Part Number Style
1200 30 2.0 370 APT30D120B
60 2.0 400 APT60D120B
1000 30 1.9 300 APT30D100B
60 1.9 280 APT60D100B
600 15 1.6 80 APT15D60B
30 1.6 85 APT30D60B
60 1.6 130 APT60D60B
400 30 1.3 32 APT30D40B
60 1.3 37 APT60D40B
300 60 1.2 38 APT60D30B
200 30 1.1 24 APT30D20B
60 1.1 31 APT60D20B
1200 15 2.0 260 APT15D120K
1000 15 1.9 260 APT15D100K
600 15 1.6 80 APT15D60K
400 15 1.3 35 APT15D40K
300 15 1.2 32 APT15D30K
1200 27 2.0 370 APT2X30D120J
53 2.0 400 APT2X60D120J
93 2.0 420 APT2X100D120J
1000 28 1.9 300 APT2X30D100J
55 1.9 280 APT2X60D100J
95 1.9 300 APT2X100D100J
600 30 1.6 85 APT2X30D60J
60 1.6 130 APT2X60D60J
100 1.6 180 APT2X100D60J
400 30 1.3 32 APT2X30D40J
60 1.3 37 APT2X60D40J
100 1.3 50 APT2X100D40J
300 30 1.2 25 APT2X30D30J
60 1.2 38 APT2X60D30J
100 1.2 47 APT2X100D30J
200 30 1.1 24 APT2X30D20J
60 1.1 31 APT2X60D20J
100 1.1 60 APT2X100D20J
1200 15 2.0 260 APT15D120BCT
30 2.0 370 APT30D120BCT
1000 15 1.9 80 APT15D100BCT
30 1.9 85 APT30D100BCT
600 15 1.6 35 APT15D60BCT
30 1.6 32 APT30D60BCT
400 15 1.3 32 APT15D40BCT
30 1.3 25 APT30D40BCT
300 15 1.2 32 APT15D30BCT
30 1.2 25 APT30D30BCT
200 15 1.1 41 APT15D20BCT
30 1.1 24 APT30D20BCT
TO-247[BCT]
*Common Cathode
TO-247[B] D3 PAK[S]
TO-268
TO-220[K]
ISOTOP®[J] SOT-227
Antiparallel
Configuration
(ISOLATED BASE)
“D” Series FREDs
16 * Current rating per leg for common cathode configuration
IF VF (volts) trr(ns) Package
Volts Amps Typ 25OC Typ 25OC Part Number Style
1000 60 1.9 280 APT60D100LCT
600 60 1.6 130 APT60D60LCT
400 60 1.3 37 APT60D40LCT
300 60 1.2 38 APT60D30LCT
200 60 1.1 31 APT60D20LCT
1000 15 1.9 260 APT15D100BHB
30 1.9 300 APT30D100BHB
600 30 1.6 85 APT30D60BHB
1000 30 1.9 300 APT30D100BCA
600 15 1.6 80 APT15D60BCA
30 1.6 85 APT30D60BCA
200 30 1.1 24 APT30D20BCA
IF VF (volts) trr(ns) Package
Volts Amps Typ 25OC Typ 25OC Part Number Style
600 30 4.0 20 APT30DS60B TO-247
15 4.5 12.5 APT15DS60B
Two - 300V FREDs in Series
VF (volts) trr(ns)
IF Typ 25OC Typ 25OC Package
Amps “200V” “200V” Part Number Configuration Style
15 0.80 80 APT15S20K TO-220
15 0.80 80 APT15S20KCT *common cathode
60 0.83 55 APT60S20S D3 PAK
30 0.80 55 APT30S20S
100 0.89 70 APT100S20B
60 0.83 55 APT60S20B
30 0.83 55 APT30S20B TO-247
30 0.80 55 APT30S20BCT *common cathode
15 0.80 80 APT15S20BCT *common cathode
60 0.83 55 APT60S20B2CT *common cathode T-MAXTM
100 0.89 70 APT100S20LCT *common cathode TO-264
100 0.89 70 APT2X101S20J
60 0.83 55 APT2X61S20J ISOTOP®
30 0.80 55 APT2X31S20J
TO-264[LCT]
*Common Cathode
TO-247[BHB]
Half Bridge
TO-247[BCA]
Common Anode
“D” Series FREDs
Schottky Diodes
“DS” Series FREDs
These Schottky Diodes offer several dramatic improvements over
currently used Fast Recovery Epitaxial Diodes (FREDs):
• lower forward voltage drop (VF) to minimize conduction loss
enabling higher power conversion efficiencies.
• softer reverse recovery characteristics resulting in reduced EMI
• avalanche energy rated (EAS) offering improved reliability.
Power supply designers can use these new schottky diodes to im-
prove cost, power density, and efficiency of their designs. Designs
with these schottky diodes can experience 10-15% lower losses than
FRED’s with the same voltage ratings. These cost effective Schottky
Diodes can replace FRED’s as output rectifiers in high power 48 volt
telecom rectifiers and DC-DC converters and as free wheeling and
anti-parallel diodes in low voltage converters.
http://store.iiic.cc/
17
BVDSS RDS(ON) ID(Cont) SOA Package
Volts Ohms Amps Watts Part Number Style
600 0.125 49 325 APL602B2
500 0.090 58 325 APL502B
1000 0.600 18 325 APL1001J
600 0.125 43 325 APL602J
500 0.090 52 325 APL502J
Advanced Power Technology’s products are available in die form. Die information can be requested from our
website at www.advancedpower.com or contact APT directly for a copy of the current Die Product Catalog.
Advanced Power Technology manufactures a broad range of discrete power semiconductors for industrial, military, and space applications.
Our focus is on the high voltage, high power, and high performance segment of this market. APT’s technology leadership allows us to
offer the latest high performance power MOSFETs, FREDFETs, IGBTs, and Diodes. All products listed in this catalog can be provided
in hermetic packages. APT is ISO9001-2000 registered, MIL-PRF-19500 certified and can offer TX, TXV, Space Level processing, Custom
testing and screening as well as Plastic Up-Screening. Contact your local representative or APT directly for a copy of the current Hi-Rel
Capabilities Brochure.
In addition to the broad line of leading edge products in this catalog, APT is dedicated to providing innovative solutions for our cus-
tomers. This means working with our customers to solve their procurement, manufacturing or application problems. We are known as
the supplier that provides solutions that others cannot, or will not, provide. These include, but are not limited to:
• Custom silicon and packaging
• Supply chain management requirements
• Strategic inventories to allow for unexpected changes in demand
• Special testing
• Thermal and power management
• Hi-Rel Testing/Screening
Part Numbers for TO-264 packages - replace ”B2”
with “L” in part number
ISOTOP®[J]
SOT-227
(ISOLATED BASE)
TO-264[L]
T-MAX™[B2]
Linear MOSFETs
Custom Products
Hermetic and Hi-Rel
Die Products
What is a Linear MOSFET?
A MOSFET specifically designed to be more robust than a standard
MOSFET when operated with both high voltage and high current
near DC conditions (>100msecs).
The Problem with SMPS MOSFETs
MOSFETs optimized for high frequency SMPS applications
have poor high voltage DC SOA. Most SMPS type MOSFETs over-
state SOA capability at high voltage on the data sheets. Above
~30V and DC conditions, SOA drops faster than is indicated by PD
limited operation.
For pulsed loads (t<10ms) there is generally no problem using
a standard MOSFET.
APT Technology Innovation
Introduced in 1999, APT modified its proprietary patented self-
aligned metal gate MOSFET technology for enhanced performance
in high voltage, linear applications. These Linear MOSFETs
typically provide 1.5-2.0 times the DC SOA capability at high
voltage compared to other MOSFET technologies optimized for
switching applications.
Designers will need Linear MOSFETs when…
• High Current & > 200V >100msec
• Used as a variable power resistor
• Soft start application (limit surge currents)
• Linear amplifier circuit
Typical Applications…
• Active loads above 200 volts such as DC dynamic loads for
testing power supplies, batteries, fuel cells, etc.
• High voltage, high current constant current sources.
18
Power Modules
Advanced Power Technology offers a comprehensive line of standard off
the shelf module products as well as custom Application Specific Power
Modules (ASPM®) designed specifically to meet your special needs
using state of the art assembly techniques, materials and silicon. Our
modules are used in a wide variety of markets and applications similar
to our discrete products where their benefits provide our customers
with superior value. Those benefits include:
The use of bare dice results in a high degree of integration and
facilitates close spacing between devices. In such highly integrated
power structures the number of external connections is kept to a
bare minimum, four only in the case of a full bridge (+Vbus, 0Vbus,
VOut1, VOut2). All other connections are internal and very short for
minimum parasitic resistance and inductance. Low parasitics permit
safe operation at high frequencies by improving efficiency and reducing
voltage overshoots at device turn off. Lower overshoots also equate to
less EMI/RFI and easier filtering.
Thanks to the compact nature of ASPM® modules, decoupling capacitors
may be situated close to the power bus, thereby nullifying the effects
of stray inductance between bus and module.
The attachment of bare dice onto a substrate results in excellent thermal
management with full galvanic isolation to the base plate.
The substrate (Insulated Metal Substrate or ceramic either alumina
Al2O3 or aluminium nitride AlN) and the type and number of
semiconductor chips are carefully chosen based on the required
electrical and thermal performance as well as on cost.
Kelvin connections to gates and sources can be implemented directly
on-chip, thereby separating control signals from the power paths for
optimum noise immunity.
For special applications like linear, RF and Hi-Rel, power semiconductor
chips may be pre-sorted into narrow bands of VGS(th) or leakage
current, to improve system performance through parameter
matching.
Circuit functions that generate substantial losses are integrated onto
substrates for external cooling, while drivers and protection elements
dissipating little power are assembled in SMD form onto PCBs inside
the housing.
Galvanic isolation of the input signals may be realized via internal
optocouplers or transformers with an integrated DC-DC converter
furnishing isolated LV power. Such a module is driven by low-level
ground-referenced signals.
RCD snubber networks may also be integrated into an ASPM® module,
their close proximity to the power semiconductors guaranteeing
effectiveness.
Because all internal power connections are mask defined during
substrate manufacture, reproducibility of both thermal and electrical
characteristics is near perfect, both within a given batch and from lot
to lot.
Summarizing, better voltage safety margins together with first class
and reproducible thermal and electrical performance lead to improved
reliability of ASPM® modules compared to discrete assemblies.
The thermal cycling capability of the module can be dramatically
extended by replacing the copper base plate with engineered materials
such as AlSiC due to the closely matched Temperature Coefficients of
Expansion compared to the internal ceramic substrates.
Both the size and weight of a power function are shrunk drastically
as a result of integration. Most wiring is internal and little hardware
is needed to assemble the module onto its heat sink and to connect
it electrically.
Depending on the circuit complexity and on the power to be dissipated
it is sometimes possible to dispense entirely with a costly and heavy
base plate.
For larger modules where a base plate is nonetheless obligatory, it may
be advantageous to specify a Metal-Matrix-Composite material (AlSiC).
Such a baseplate permits significant weight reduction (AlSiC density
= 3, Copper density = 8.6).
Using a power module greatly reduces the amount of required external
hardware — busbars, screws, wire, etc.
Procurement costs for the complete circuit function are much less, as
only a single macro-component is sourced instead of the multitude
of parts needed for a discrete solution.
Labor costs for system assembly at the end customer are much lower.
Time to market is shortened, thereby benefiting the customer’s Return-
on-Investment. APT Europe provides the engineering of the complete
power function, allowing the customer to concentrate on system and
packaging considerations.
The Customer-Specific-Module approach offers great flexibility. An
ASPM® module is easily upgradeable through design improvements,
substitution of more advanced semiconductors, better manufacturing
techniques and so on in order to maintain state-of-the-art performance
at competitive costs.
Modules are compatible with standard of the industry, easy to market
and price competitive. Full product range is offered including PT, NPT
and Trench gate IGBTs, Power MOS V, Power MOS 7 MOSFETs and
FREDFETs, CoolmosTM and SiC diodes in a comprehensive range of
electrical configurations. Low profile modules combined with state
of the art devices permit enhanced electrical, thermal and mechanical
ratings.
ASPM® modules integrate the exact customer electrical configuration
(power and driver) including device part number (mix of silicon sources
possible). Specific silicon (sorted on specific parameters), specific
material and assembly processes, dedicated shape of connectors and
package combined with the implementation of screening procedures
make the ASPM® module to meet thermal, electrical, quality and
reliability requirements of the customer.
The ASPM® module is designed to meet 100% of the customer needs.
It provides the customer with a unique solution.
APT has development, design and engineering competencies,
analytical and modeling tools, manufacturing technologies, multi-
site infrastructure to satisfy your requirements in power integration,
providing design for manufacturability, and improvement in
performance and reliability.
http://store.iiic.cc/
19
(for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com)
VCES IC(A) VCE(ON) Tf(Ic)(ns) IGBT Package
(V) TC=80o C at rated Ic at rated Ic Type Style NTC Part Number
20 2.1 40 NPT E2 - APTGF20X60E2
600 30 2.1 40 NPT E2 - APTGF30X60E2
50 2.1 40 NPT E2 - APTGF50X60E2
10 3.2 100 NPT E2 - APTGF10X120E2
1200 15 3.2 100 NPT E2 - APTGF15X120E2
25 3.2 100 NPT E2 - APTGF25X120E2
50 3.2 100 NPT E2 - APTGF50X120E2
1700 50 3.2 30 NPT E2 - APTGS50X170E2
20 2.1 40 NPT P2 - APTGF20X60P2
20 2.1 40 NPT P2 YES APTGF20X60TP2
30 2.1 40 NPT P2 - APTGF30X60P2
30 2.1 40 NPT P2 YES APTGF30X60TP2
50 2.1 40 NPT P2 - APTGF50X60P2
600 50 2.1 40 NPT P2 YES APTGF50X60TP2
90 2.1 40 NPT E3 - APTGF90X60E3
90 2.1 50 NPT E3 YES APTGF90X60TE3
125 2.0 40 NPT E3 - APTGF125X60E3
125 2.0 40 NPT E3 YES APTGF125X60TE3
150 2.1 50 NPT E3 - APTGF150X60E3
150 2.1 50 NPT E3 YES APTGF150X60TE3
10 3.2 100 NPT P2 - APTGF10X120P2
10 3.2 100 NPT P2 YES APTGF10X120TP2
15 3.2 100 NPT P2 - APTGF15X120P2
15 3.2 100 NPT P2 YES APTGF15X120TP2
25 3.2 100 NPT P2 - APTGF25X120P2
25 3.2 100 NPT P2 YES APTGF25X120TP2
50 3.2 100 NPT P2 - APTGF50X120P2
1200 50 3.2 100 NPT P2 YES APTGF50X120TP2
50 3.2 100 NPT E3 - APTGF50X120E3
50 3.2 100 NPT E3 YES APTGF50X120TE3
75 1.7 90 TRENCH E3 - APTGT75X120E3
75 1.7 90 TRENCH E3 YES APTGT75X120TE3
100 1.7 90 TRENCH E3 - APTGT100X120E3
100 1.7 90 TRENCH E3 YES APTGT100X120TE3
150 1.7 90 TRENCH E3 - APTGT150X120E3
150 1.7 90 TRENCH E3 YES APTGT150X120TE3
50 3.2 30 NPT E3 - APTGS50X170E3
1700 50 3.2 30 NPT E3 YES APTGS50X170TE3
75 3.5 60 NPT E3 - APTGS75X170E3
75 3.5 60 NPT E3 YES APTGS75X170TE3
T1
R
T2
Q5
11
12 Q6
9
10
V
8
Q2
5
6
U
Q1
W
1
P+
2
N-
4
3
Q3
Q4
7
3 PHASE BRIDGE
IGBT Power Modules
Long pin package
Short pin package
E2
P2
E3
Note: Any reference can be built
in full bridge confi guration instead
of 3 phase bridge
NTC is optional: APTG . . . . E3 (w/o NTC)
APTG . . . .TE3 (with NTC)
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20
(for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com)
VCES IC(A) VCE(ON) Tf(Ic)(ns) IGBT Package
(V) TC=80o C at rated Ic at rated Ic Type Style NTC Part Number
10 2.1 40 NPT P2 YES APTGF10X60RTP2
10 2.1 40 NPT P2 YES APTGF10X60BTP2
15 2.1 40 NPT P2 YES APTGF15X60RTP2
15 2.1 40 NPT P2 YES APTGF15X60BTP2
600 20 2.1 40 NPT P2 YES APTGF20X60RTP2
20 2.1 40 NPT P2 YES APTGF20X60BTP2
30 2.1 40 NPT P2 YES APTGF30X60RTP2
30 2.1 40 NPT P2 YES APTGF30X60BTP2
50 2.1 40 NPT P3 YES APTGF50X60RTP3
50 2.1 40 NPT P3 YES APTGF50X60BTP3
10 2.5 75 NPT P2 YES APTGS10X120RTP2
10 2.5 75 NPT P2 YES APTGS10X120BTP2
15 2.5 75 NPT P2 YES APTGS15X120RTP2
15 2.5 75 NPT P2 YES APTGS15X120BTP2
25 2.5 80 NPT P2 YES APTGS25X120RTP2
1200 25 2.1 80 NPT P2 YES APTGS25X120BTP2
35 1.7 90 TRENCH P3 YES APTGT35X120RTP3
35 1.7 90 TRENCH P3 YES APTGT35X120BTP3
50 1.7 90 TRENCH P3 YES APTGT50X120RTP3
50 1.7 90 TRENCH P3 YES APTGT50X120BTP3
75 1.7 90 TRENCH P3 YES APTGT75X120RTP3
75 1.7 90 TRENCH P3 YES APTGT75X120BTP3
1700 50 2.0 - TRENCH P3 YES APTGT50X170RTP3
50 2.0 - TRENCH P3 YES APTGT50X170BTP3
6
8
R
15
11
Q6
5
Q4
Q2
4
CR15
23
14
7
Q7
19
13
24
17
12
10
CR11
1
2
3
1816
Q5
Q3
Q19
CR7
22
20
CR13
CR12
CR10CR14
21
3 PHASE BRIDGE + RECTIFIER
IGBT Power Modules
P2
P3
Brake switch is optional:
APTG . . . . RTP2 (w/o brake)
APTG . . . . BTP2 (with brake)
Note: Any reference can be built in full bridge confi guration instead of 3 phase bridge
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21
(for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com)
VCES IC(A) VCE(ON) Tf(Ic)(ns) IGBT Package
(V) TC=80o C at rated Ic at rated Ic Type Style NTC Part Number
40 2.2 50 PT SP4 YES APTGU40DH60T
70 2.2 50 PT SP4 YES APTGU70DH60T
600 90 2.1 50 NPT SP4 YES APTGF90DH60T
100 2.2 50 PT SP6 - APTGU100DH60
180 2.1 50 NPT SP6 - APTGF180DH60
30 3.3 75 PT SP4 YES APTGU30DH120T
50 3.2 50 NPT SP4 YES APTGF50DH120T
1200 60 3.3 75 PT SP4 YES APTGU60DH120T
90 3.3 75 PT SP6 - APTGU90DH120
150 3.2 50 NPT SP6 - APTGF150DH120
VCES IC(A) VCE(ON) Tf(Ic)(ns) IGBT Package
(V) TC=80o C at rated Ic at rated Ic Type Style NTC Part Number
40 2.2 50 PT SP4 YES APTGU40H60T
70 2.2 50 PT SP4 YES APTGU70H60T
600 90 2.1 50 NPT SP4 YES APTGF90H60T
100 2.2 50 PT SP6 - APTGU100H60
180 2.1 50 NPT SP6 - APTGF180H60
30 3.3 75 PT SP4 YES APTGU30H120T
50 3.2 50 NPT SP4 YES APTGF50H120T
1200 60 3.3 75 PT SP4 YES APTGU60H120T
90 3.3 75 PT SP6 - APTGU90H120
150 3.2 50 NPT SP6 - APTGF150H120
VCES IC(A) VCE(ON) Tf(Ic)(ns) IGBT Package
(V) TC=80o C at rated Ic at rated Ic Type Style NTC Part Number
70 2.2 50 PT SP4 YES APTGU70DU60T
90 2.1 50 NPT SP4 YES APTGF90DU60T
600 140 2.2 50 PT SP4 YES APTGU140DU60T
180 2.1 50 NPT SP4 YES APTGF180DU60T
200 2.2 50 PT SP6 - APTGU200DU60
350 2.1 50 NPT SP6 - APTGF350DU60
50 3.2 50 NPT SP4 YES APTGF50DU120T
60 3.3 75 PT SP4 YES APTGU60DU120T
1200 100 3.2 50 NPT SP4 YES APTGF100DU120T
120 3.3 75 PT SP4 YES APTGU120DU120T
180 3.3 75 PT SP6 - APTGU180DU120
300 3.2 50 NPT SP6 - APTGF300DU120
C2
Q2
NTC1
Q1
E
C1
E1
G1
NTC2
E2
G2
VBUS
OUT1 OUT2
Q3
Q4
E3
G3
0/VBUS
E4
G4
NTC2
G2
E2
NTC1
Q2
Q1
G1
E1
ASYMMETRICAL BRIDGE
FULL BRIDGE
DUAL COMMON SOURCE
IGBT Power Modules
SP6
SP6
SP4
SP4
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22
(for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com)
VCES IC(A) VCE(ON) Tf(Ic)(ns) IGBT Package
(V) TC=80o C at rated Ic at rated Ic Type Style NTC Part Number
50 2.1 40 NPT D1 - APTGF50DA60D1
70 2.2 50 PT SP4 YES APTGU70DA60T
75 2.1 40 NPT D1 - APTGF75DA60D1
90 2.0 50 NPT D1 - APTGF90DA60D1
90 2.1 50 NPT SP4 YES APTGF90DA60T
125 2.0 40 NPT D1 - APTGF125DA60D1
600 140 2.2 50 PT SP4 YES APTGU140DA60T
165 2.0 50 NPT D1 - APTGF165DA60D1
180 2.0 50 NPT D3 - APTGF180DA60D3
180 2.1 50 NPT SP4 YES APTGF180DA60T
200 2.2 50 PT SP6 - APTGU200DA60
250 2.0 40 NPT D3 - APTGF250DA60D3
330 2.0 50 NPT D3 - APTGF330DA60D3
350 2.1 50 NPT SP6 - APTGF350DA60
25 1.7 90 Trench D1 - APTGT25DA120D1
35 1.7 90 Trench D1 - APTGT35DA120D1
50 1.7 90 Trench D1 - APTGT50DA120D1
50 3.2 50 NPT SP4 YES APTGF50DA120T
60 3.3 75 PT SP4 YES APTGU60DA120T
75 1.7 90 Trench D1 - APTGT75DA120D1
1200 100 1.7 90 Trench D1 - APTGT100DA120D1
100 3.2 50 NPT SP4 YES APTGF100DA120T
120 3.3 75 PT SP4 YES APTGU120DA120T
150 1.7 90 Trench D1 - APTGT150DA120D1
150 1.7 90 Trench D3 - APTGT150DA120D3
180 3.3 75 PT SP6 - APTGU180DA120
200 1.7 90 Trench D3 - APTGT200DA120D3
300 1.7 90 Trench D3 - APTGT300DA120D3
300 3.2 50 NPT SP6 - APTGF300DA120
30 2.0 - Trench D1 - APTGT30DA170D1
50 2.0 - Trench D1 - APTGT50DA170D1
75 2.0 200 Trench D1 - APTGT75DA170D1
1700 100 2.0 200 Trench D1 - APTGT100DA170D1
150 2.0 200 Trench D1 - APTGT150DA170D1
150 2.0 200 Trench D3 - APTGT150DA170D3
200 2.0 200 Trench D3 - APTGT200DA170D3
300 2.0 200 Trench D3 - APTGT300DA170D3
CR1
VBUS SENSE
NTC2
Q2
G2
NTC1
OUT
VBUS
E2
0/VBUS
BOOST CHOPPER
IGBT Power Modules
SP6SP4D3
D1
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23
VCES IC(A) VCE(ON) Tf(Ic)(ns) IGBT Package
(V) TC=80o C at rated Ic at rated Ic Type Style NTC Part Number
50 2.1 40 NPT D1 - APTGF50SK60D1
70 2.2 50 PT SP4 YES APTGU70SK60T
75 2.1 40 NPT D1 - APTGF75SK60D1
90 2.0 50 NPT D1 - APTGF90SK60D1
90 2.1 50 NPT SP4 YES APTGF90SK60T
125 2.0 40 NPT D1 - APTGF125SK60D1
600 140 2.2 50 PT SP4 YES APTGU140SK60T
165 2.0 50 NPT D1 - APTGF165SK60D1
180 2.0 50 NPT D3 - APTGF180SK60D3
180 2.1 50 NPT SP4 YES APTGF180SK60T
200 2.2 50 PT SP6 - APTGU200SK60
250 2.0 40 NPT D3 - APTGF250SK60D3
330 2.0 50 NPT D3 - APTGF330SK60D3
350 2.1 50 NPT SP6 - APTGF350SK60
25 1.7 90 Trench D1 - APTGT25SK120D1
35 1.7 90 Trench D1 - APTGT35SK120D1
50 1.7 90 Trench D1 - APTGT50SK120D1
50 3.2 50 NPT SP4 YES APTGF50SK120T
60 3.3 75 PT SP4 YES APTGU60SK120T
75 1.7 90 Trench D1 - APTGT75SK120D1
1200 100 1.7 90 Trench D1 - APTGT100SK120D1
100 3.2 50 NPT SP4 YES APTGF100SK120T
120 3.3 75 PT SP4 YES APTGU120SK120T
150 1.7 90 Trench D1 - APTGT150SK120D1
150 1.7 90 Trench D3 - APTGT150SK120D3
180 3.3 75 PT SP6 - APTGU180SK120
200 1.7 90 Trench D3 - APTGT200SK120D3
300 1.7 90 Trench D3 - APTGT300SK120D3
300 3.2 50 NPT SP6 - APTGF300SK120
30 2.0 - Trench D1 - APTGT30SK170D1
50 2.0 - Trench D1 - APTGT50SK170D1
75 2.0 200 Trench D1 - APTGT75SK170D1
1700 100 2.0 200 Trench D1 - APTGT100SK170D1
150 2.0 200 Trench D1 - APTGT150SK170D1
150 2.0 200 Trench D3 - APTGT150SK170D3
200 2.0 200 Trench D3 - APTGT200SK170D3
300 2.0 200 Trench D3 - APTGT300SK170D3
0/VBUS NTC1
OUT
Q1
VBUS NTC2
0/VBUS SENSE
G1
E1
BUCK CHOPPER
IGBT Power Modules
SP6SP4D3
D1
(for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com)
http://store.iiic.cc/
24
(for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com)
VCES IC(A) VCE(ON) Tf(Ic)(ns) IGBT Package
(V) TC=80o C at rated Ic at rated Ic Type Style NTC Part Number
50 2.1 40 NPT D1 - APTGF50A60D1
70 2.2 50 PT SP4 YES APTGU70A60T
75 2.1 40 NPT D1 - APTGF75A60D1
90 2.0 50 NPT D1 - APTGF90A60D1
90 2.1 50 NPT SP4 YES APTGF90A60T
125 2.0 40 NPT D1 - APTGF125A60D1
600 140 2.2 50 PT SP4 YES APTGU140A60T
165 2.0 50 NPT D1 - APTGF165A60D1
180 2.0 50 NPT D3 - APTGF180A60D3
180 2.1 50 NPT SP4 YES APTGF180A60T
200 2.2 50 PT SP6 - APTGU200A60
250 2.0 40 NPT D3 - APTGF250A60D3
330 2.0 50 NPT D3 - APTGF330A60D3
350 2.1 50 NPT SP6 - APTGF350A60
25 1.7 90 Trench D1 - APTGT25A120D1
35 1.7 90 Trench D1 - APTGT35A120D1
50 1.7 90 Trench D1 - APTGT50A120D1
50 3.2 50 NPT SP4 YES APTGF50A120T
60 3.3 75 PT SP4 YES APTGU60A120T
75 1.7 90 Trench D1 - APTGT75A120D1
100 1.7 90 Trench D1 - APTGT100A120D1
1200 100 3.2 50 NPT SP4 YES APTGF100A120T
120 3.3 75 PT SP4 YES APTGU120A120T
150 1.7 90 Trench D1 - APTGT150A120D1
150 1.7 90 Trench D3 - APTGT150A120D3
180 3.3 75 PT SP6 - APTGU180A120
200 1.7 90 Trench D3 - APTGT200A120D3
300 1.7 90 Trench D3 - APTGT300A120D3
300 3.2 50 NPT SP6 - APTGF300A120
30 2.0 - Trench D1 - APTGT30A170D1
50 2.0 - Trench D1 - APTGT50A170D1
75 2.0 200 Trench D1 - APTGT75A170D1
1700 100 2.0 200 Trench D1 - APTGT100A170D1
150 2.0 200 Trench D1 - APTGT150A170D1
150 2.0 200 Trench D3 - APTGT150A170D3
200 2.0 200 Trench D3 - APTGT200A170D3
300 2.0 200 Trench D3 - APTGT300A170D3
VBUS
Q1
G1
E1
OUT
NTC2
0/VBUS
G2
E2
NTC1
Q2
PHASE LEG
IGBT Power Modules
SP6SP4D3
D1
http://store.iiic.cc/
25
(for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com)
VCES IC(A) VCE(ON) Tf(Ic)(ns) IGBT Package
(V) TC=80o C at rated Ic at rated Ic Type Style NTC Part Number
200 2.1 40 NPT D4 - APTGF200U60D4
300 2.1 40 NPT D4 - APTGF300U60D4
600 360 2.0 50 NPT D4 - APTGF360U60D4
500 2.0 40 NPT D4 - APTGF500U60D4
660 2.0 50 NPT D4 - APTGF660U60D4
200 1.7 90 Trench D4 - APTGT200U120D4
1200 300 1.7 90 Trench D4 - APTGT300U120D4
400 1.7 90 Trench D4 - APTGT400U120D4
600 1.7 90 Trench D4 - APTGT600U120D4
200 2.0 - Trench D4 - APTGT200U170D4
1700 300 2.0 200 Trench D4 - APTGT300U170D4
400 2.0 200 Trench D4 - APTGT400U170D4
600 2.0 200 Trench D4 - APTGT600U170D4
VCES IC(A) VCE(ON) Tf(Ic)(ns) IGBT Package
(V) TC=80o C at rated Ic at rated Ic Type Style NTC Part Number
70 3.2 50 NPT LP8 YES APTLGF70U120T
75 3.2 50 NPT LP8 YES APTLGF75U120T*
140 3.2 50 NPT LP8 YES APTLGF140U120T
1200 150 3.2 50 NPT LP8 YES APTLGF150U120T*
210 3.2 50 NPT LP8 YES APTLGF210U120T
225 3.2 50 NPT LP8 YES APTLGF225U120T*
280 3.2 50 NPT LP8 YES APTLGF280U120T
300 3.2 50 NPT LP8 YES APTLGF300U120T*
3
5
2
1
DRIVER
0V
-1
5V
POWER
AUXILIARY
ISOLATED
HIGH
FREQUENCY
TRANSFORMER
FORCED
START UP
CIRCUIT
C1 C2
E2
E1
FREQUENCY
HIGH
UNDERVOLTAGE
LOCKOUT
GND
Q
INH
PROCESSING
CIRCUIT
_
E0
S0 TRANSFORMER
SUPPLY
+12V
SIGNAL
NTC1
NTC2
+1
5V
SINGLE SWITCH
SINGLE SWITCH, INTELLIGENT POWER MODULE
IGBT Power Modules
D4
LP8
* AlSiC base plate for extended reliability and AlN substrate for improved thermal performance
Single switch IGBT module with integrated
driver and isolated power supplies dedicated
to operate in ZVS (zero voltage switching)
operation at 80 KHz.
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26
(for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com)
VDSS RDS(ON) ID(A) Tf(Id)(ns) MOSFET Package
(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number
10 125 10 MOS 7 SP4 YES APTM20DAM10T
200 8 147 10 MOS 7 SP4 YES APTM20DAM08T
5 250 10 MOS 7 SP6 - APTM20DAM05
4 300 10 MOS 7 SP6 - APTM20DAM04
38 64 10 MOS 7 SP4 YES APTM50DAM38T
500 35 70 30 MOS 7 SP4 YES APTM50DAM35T
19 125 10 MOS 7 SP6 - APTM50DAM19
17 140 30 MOS 7 SP6 - APTM50DAM17
VDSS RDS(ON) ID(A) Tf(Id)(ns) MOSFET Package
(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number
10 125 10 MOS 7 SP4 YES APTM20SKM10T
200 8 147 10 MOS 7 SP4 YES APTM20SKM08T
5 250 10 MOS 7 SP6 - APTM20SKM05
4 300 10 MOS 7 SP6 - APTM20SKM04
38 64 10 MOS 7 SP4 YES APTM50SKM38T
500 35 70 30 MOS 7 SP4 YES APTM50SKM35T
19 125 10 MOS 7 SP6 - APTM50SKM19
17 140 30 MOS 7 SP6 - APTM50SKM17
VDSS RDS(ON) ID(A) Tf(Id)(ns) MOSFET Package
(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number
20 62 10 FREDFET 7 SP4 YES APTM20HM20FT
200 16 74 10 FREDFET 7 SP4 YES APTM20HM16FT
10 125 10 FREDFET 7 SP6 - APTM20HM10F
8 147 10 FREDFET 7 SP6 - APTM20HM08F
75 32 10 FREDFET 7 SP4 YES APTM50HM75FT
500 65 37 30 FREDFET 7 SP4 YES APTM50HM65FT
38 64 10 FREDFET 7 SP6 - APTM50HM38F
35 70 30 FREDFET 7 SP6 - APTM50HM35F
CR1
VBUS SENSE
NTC2
Q2
G2
NTC1
OUT
VBUS
E2
0/VBUS
0/VBUS NTC1
OUT
Q1
VBUS NTC2
0/VBUS SENSE
G1
E1
S3
G3
S4
G4
NTC2
S1
G1
OUT2OUT1
VBUS
Q1
Q2
S2
G2
0/VBUSNTC1
Q3
Q4
BUCK CHOPPER
BOOST CHOPPER
FULL BRIDGE
MOSFET Power Modules
SP6
SP4
SP6
SP4
http://store.iiic.cc/
27
VDSS RDS(ON) ID(A) Tf(Id)(ns) MOSFET Package
(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number
200 20 62 10 MOS 7 SP4 YES APTM20HM20ST
500 75 32 10 MOS 7 SP4 YES APTM50HM75ST
1000 450 13 10 MOS 7 SP4 YES APTM100H45ST
VDSS RDS(ON) ID(A) Tf(Id)(ns) MOSFET Package
(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number
500 75 32 10 FREDFET 7 SP4 YES APTM50HM75FRT
VDSS RDS(ON) ID(A) Tf(Id)(ns) MOSFET Package
(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number
500 100 37 60 FREDFET 5 LP8W YES APTLM50H10FRT
75 32 5 FREDFET 7 LP8W YES APTLM50HM75FRT
OUT1 OUT2
G1
S1
CR2A
Q1
CR1A
CR3BCR1B
G2
S2
NTC1
CR2B
Q2 CR4B
0/VBUS
CR4A
CR3A
G4
G3
S3
S4
Q4
NTC2
Q3
VBUS
Q4
Q3
Q1
Q2
+A
CR3
+B
LA
LB
NA
NB
CR1
G4
S4
OUT2A
OUT2B
G3
-A
-B
VBUS1
OUT1A
S2
0/VBUS
OUT1B
G1
VBUS2
G2
CR4CR2
NTC2
NTC1
R1
H1
L1
L1
CTN1
K
DRIVER 1
V1
VSH-
VSH+
CTN2
OUT1
L3
H3
V3
L3
DRIVER 3
+BUS
DRIVER 4
H4
L
4
L4
H2
V4
0/VBUS
DRIVER 2
OUT2
D
S
RS
0/V5
L
+
-
V5
H5
NDRIVER 5
FULL BRIDGE + SERIES AND PARALLEL DIODES
FULL BRIDGE + RECTIFIER BRIDGE
FULL BRIDGE, INTELLIGENT POWER MODULE
MOSFET Power Modules
SP4
SP4
LP8W
(for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com)
http://store.iiic.cc/
28
(for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com)
VDSS RDS(ON) ID(A) Tf(Id)(ns) MOSFET Package
(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number
10 125 10 FREDFET 7 SP4 YES APTM20AM10FT
8 147 10 FREDFET 7 SP4 YES APTM20AM08FT
200 5 250 10 FREDFET 7 SP6 - APTM20AM05F
5 250 10 FREDFET 5 LP8 YES APTM20AM05FT
4 300 10 FREDFET 7 SP6 - APTM20AM04F
38 64 10 FREDFET 7 SP4 YES APTM50AM38FT
35 70 30 FREDFET 7 SP4 YES APTM50AM35FT
500 25 110 10 FREDFET 5 LP8 YES APTM50AM25FT
19 125 10 FREDFET 7 SP6 - APTM50AM19F
17 140 30 FREDFET 7 SP6 - APTM50AM17F
VDSS RDS(ON) ID(A) Tf(Id)(ns) MOSFET Package
(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number
200 10 125 10 MOS 7 SP4 YES APTM20AM10ST
6 225 40 MOS 7 SP6 - APTM20AM06S
38 64 10 MOS 7 SP4 YES APTM50AM38ST
500 24 110 5 MOS 7 SP6 - APTM50AM24S
19 125 5 MOS 7 LP8W YES APTM50AM19ST
230 26 10 MOS 7 SP4 YES APTM100A23ST
1000 130 49 15 MOS 7 SP6 - APTM100A13S
120 50 10 MOS 5 LP8W YES APTM100A12ST
VBUS
Q1
G1
E1
OUT
NTC2
0/VBUS
G2
E2
NTC1
Q2
NTC2
OUT
VBUS
NTC1
0/VBUS
Q1
G1
Q2
S1
S2
G2
PHASE LEG
PHASE LEG + SERIES AND PARALLEL DIODES
MOSFET Power Modules
SP6
SP4
LP8
SP6
SP4
LP8W
http://store.iiic.cc/
29
(for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com)
VDSS RDS(ON) ID(A) Tf(Id)(ns) MOSFET Package
(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number
20 62 10 MOS 7 SP4 YES APTM20DHM20T
200 16 74 10 MOS 7 SP4 YES APTM20DHM16T
10 125 10 MOS 7 SP6 - APTM20DHM10
8 147 10 MOS 7 SP6 - APTM20DHM08
75 32 10 MOS 7 SP4 YES APTM50DHM75T
500 65 37 30 MOS 7 SP4 YES APTM50DHM65T
38 64 10 MOS 7 SP6 - APTM50DHM38
35 70 30 MOS 7 SP6 - APTM50DHM35
VDSS RDS(ON) ID(A) Tf(Id)(ns) MOSFET Package
(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number
10 125 10 MOS 7 SP4 YES APTM20DUM10T
8 147 10 MOS 7 SP4 YES APTM20DUM08T
200 5 250 10 MOS 7 SP6 - APTM20DUM05
5 250 10 MOS 5 LP8 YES APTM20DUM05T
4 300 10 MOS 7 SP6 - APTM20DUM04
38 64 10 MOS 7 SP4 YES APTM50DUM38T
35 70 30 MOS 7 SP4 YES APTM50DUM35T
500 25 110 10 MOS 5 LP8 YES APTM50DUM25T
19 125 10 MOS 7 SP6 - APTM50DUM19
17 140 30 MOS 7 SP6 - APTM50DUM17
NTC2
S4
G4
VBUS SENSE
VBUS
Q1
G1
S1 OUT1 OUT2
Q4
CR3
0/VBUS
CR2
0/VBUS SENSE
NTC1
S
Q1 Q2
D2
S2
S1
G1 G2
D1
NTC1 NTC2
ASYMMETRICAL BRIDGE
DUAL COMMON SOURCE
MOSFET Power Modules
SP6
SP4
LP8
SP6
SP4
http://store.iiic.cc/
30
(for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com)
VDSS RDS(ON) ID(A) Tf(Id)(ns) MOSFET Package
(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number
500 38 67 5 MOS 7 SP4 YES APTM50DAM38CT
VDSS RDS(ON) ID(A) Tf(Id)(ns) MOSFET Package
(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number
500 38 67 5 MOS 7 SP4 YES APTM50AM38SCT
24 110 5 MOS 7 SP6 - APTM50AM24SC
1000 230 27 10 MOS 7 SP4 YES APTM100A23SCT
130 49 15 MOS 7 SP6 - APTM100A13SC
VDSS RDS(ON) ID(A) Tf(Id)(ns) MOSFET Package
(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number
500 75 34 5 MOS 7 SP4 YES APTM50HM75SCT
1000 450 14 10 MOS 7 SP4 YES APTM100H45SCT
VDSS RDS(ON) ID(A) Tf(Id)(ns) MOSFET Package
(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number
200 9 145 40 MOS 7 J3 - APTM20UM09S
5 237 5 MOS 7 J3 - APTM20UM05S
500 25 110 10 MOS 7 J3 - APTM50UM25S
19 122 5 MOS 7 J3 - APTM50UM19S
1000 130 48 10 MOS 5 J3 - APTM100U13S
D
Q1
G
S
CR1SK
CR1
VBUS NTC2
0/VBUS
VBUS SENSE
G2
S2
NTC1
Q2
OUT
NTC2
OUT
VBUS
NTC1
0/VBUS
Q1
G1
Q2
S1
S2
G2
OUT1 OUT2
G1
S1
CR2A
Q1
CR1A
CR3BCR1B
G2
S2
NTC1
CR2B
Q2 CR4B
0/VBUS
CR4A
CR3A
G4
G3
S3
S4
Q4
NTC2
Q3
VBUS
SINGLE SWITCH + SERIES AND PARALLEL DIODES
BOOST CHOPPER W/SILICON CARBIDE PARALLEL DIODES
PHASE LEG + SERIES W/SILICON CARBIDE PARALLEL DIODES
FULL BRIDGE + SERIES W/SILICON CARBIDE PARALLEL DIODES
MOSFET Power Modules
MOSFET with SiC Diodes Power Modules
SP6
SP4
J3
http://store.iiic.cc/
31
(for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com)
VDSS RDS(ON) ID(A) Tf(Id)(ns) MOSFET Package
(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number
600 18 107 10 COOLMOS SP4 YES APTC60DAM18CT
VDSS RDS(ON) ID(A) Tf(Id)(ns) MOSFET Package
(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number
600 35 54 10 COOLMOS SP4 YES APTC60AM35SCT
18 107 10 COOLMOS SP6 - APTC60AM18SC
150 21 10 COOLMOS SP4 YES APTC80A15SCT
800 100 32 10 COOLMOS SP4 YES APTC80A10SCT
75 43 10 COOLMOS SP6 - APTC80AM75SC
VDSS RDS(ON) ID(A) Tf(Id)(ns) MOSFET Package
(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number
600 70 29 10 COOLMOS SP4 YES APTC60HM70SCT
800 290 11 10 COOLMOS SP4 YES APTC80H29SCT
VRRM VF(V) IF(A) DIODE Package
(V) Tj=25o C TC80o C Type Style Part Number
200 1.1 500 FRED LP4 APTDF500U20
400 1.5 500 FRED LP4 APTDF500U40
600 1.8 450 FRED LP4 APTDF450U60
1000 2.3 430 FRED LP4 APTDF430U100
1200 2.5 400 FRED LP4 APTDF400U120
CR1
VBUS SENSE
NTC2
Q2
G2
NTC1
OUT
VBUS
E2
0/VBUS
NTC2
OUT
VBUS
NTC1
0/VBUS
Q1
G1
Q2
S1
S2
G2
OUT1 OUT2
G1
S1
CR2A
Q1
CR1A
CR3BCR1B
G2
S2
NTC1
CR2B
Q2 CR4B
0/VBUS
CR4A
CR3A
G4
G3
S3
S4
Q4
NTC2
Q3
VBUS
A2A1
K2K1
BOOST CHOPPER W/SILICON CARBIDE PARALLEL DIODES
PHASE LEG + SERIES W/SILICON CARBIDE PARALLEL DIODES
FULL BRIDGE + SERIES W/SILICON CARBIDE PARALLEL DIODES
SINGLE DIODE
DIODE Power Modules
COOLMOSTM with SiC Diodes Power Modules
LP4
SP4 SP6
“CoolMOSTM” comprise a new family of transistors de-
veloped by Infi neon Technologies AG. “CoolMOSTM” is a
trademark of Infi neon Technologies AG”.
http://store.iiic.cc/
32
Whatever your application needs are including . . .
Power Supplies Lighting Control Welding Systems
UPS Induction Heating Laser Control
Medical Imaging Battery Charger RF Amplifiers
Solid State Relays Linear Amplifiers Inverters/Speed Controllers
Our custom approach provides you with a fully integrated solution designed to meet your specific
requirements with an optimized balance between performance and cost without compromising quality and
reliability.
We work closely with you using the latest technologies and innovative circuit and mechanical design to pro-
vide the competitive advantage you need.
A mix of the latest silicon & packaging technologies combined with innovative circuit design enables
APT to deliver high performance products that meet or exceed our customer requirements in terms of:
POWER DENSITY AND SIZE REDUCTION
• High level of integration
-Power Stage (H-Bridge, 3 Phase Bridge, etc.)
-Control & protection functions located on internal PCB
-Opto coupler, fiber optic or transformer for isolation of driver circuits
• Minimum number of external connections
• Reduced overall system size and weight
ELECTRICAL CHARACTERISTICS ENHANCEMENT:
• Short internal connections minimize parasitic resistance and inductance
-Allows high oprating frequencies
-Reduced voltage overshoot
-Low EMI and RFI
-Improved efficiency
• Decoupling capacitors to nullify effects of stray inductance
• Die can be pre-sorted to enhance performance
THERMAL MANAGEMENT:
• Power devices mounted directly on thermally conductive substrates
• Choice of substrates for optimum performance and cost
• Full isolation to baseplate
• Engineered materials such as AlSiC, Cu/W, Cu/Mo extend thermal cycling capability
• Standard or Custom Package Outlines
• Wide Variety of Materials for Baseplates, Substrates, Terminals, and Connectors
• Leading Edge APT Silicon and Other Chip/Component Suppliers
• Integrated Liquid Cooling Option
Thick Film
Copper
Silver
Resistors
Multi-Layer
Encapsulation
Die Coat
Potting Compounds
Hard Top Resins/Epoxies
Solder Reflow
Vacuum Furnace
N2/Forming Gas/H2 Furnace
Various Solder Alloys
Wire Bond
Auto
Manual
Heavy Gauge Al Wire
Surface Mount
SMD Auto Placement
Through Hole Insertion
If you have a specific electrical, mechanical, thermal, or reliability challenge, submit a technical support
request from our website.
ASPM® is a registered trademark of Advanced Power Technology
Application Specific Power Modules (ASPM®)
PROCESS CAPABILITES
PACKAGES AND MATERIALS
FEATURES AND BENEFITS
http://store.iiic.cc/
33
Power Module Outlines
Pin out location depends on the module
configuration. Please refer to the product
datasheet for pins assignment.
All dimensions in millimeter
D1
D3
D4 P3
E3
P2
E2
34
Power Module Outlines
Pin out location depends on the module
configuration. Please refer to the product
datasheet for pins assignment.
All dimensions in millimeter
LP4
LP8
LP8W J3
SP6 - 4 outputs
SP6 - 3 outputs
SP4
35 ISOTOP® is a registered trademark of SGS Thomson
Revised
8/29/97
Revised
4/18/95
Package Outline Drawings
APT reserves the right to change, without notice, the
specifi cations and information contained herein.
March 2004
Eastern North America
Tel: (978) 664-8629
Fax: (978) 664-8657
E-Mail: rsmeast@advancedpower.com
Western North America
Tel: (541) 382-8028
Fax: (541) 388-0364
E-Mail: rsmwest@advancedpower.com
Asia-Pacifi c Rim
Tel: +866-2-2760-0270
Fax: +866-2-2760-0390
E-Mail: rsmasia@advancedpower.com
Europe, Middle East, Africa
Tel: 33-557 92 15 15
Fax: 33-556 47 97 61
E-Mail: rsmeurope@advancedpower.com
South & Central America
Tel: (541) 382-8028
Fax: (541) 388-0364
E-Mail: rsmwest@advancedpower.com
Sales Offi ces
Visit our web site at:
www.advancedpower.com
http://store.iiic.cc/