UNITValueSymbol
IC
Ptot
mA
Thermal Resistance RthA K/mW
from junction to Ambient 500
max 300Collector current
Total power dissipation up to
Tamb = 25oC
Junction Temperature
max 250 mW
Tj max 150 oC
Storge Temperature Tstg -65 to +150 oC
V
Collector-base voltage (open collector) VEBO max 10 V
VCES max 30 V
VBE = 0
oC
D.C. current gain hFE min 5000
IC = 10mA; VCE = 5V
Junction Temperature Tj max 150
MHZ
IC = 10mA; VCE = 5V
Symbol Value UNIT
VCES max 30 V
VBE = 0
mW
Tamb = 25oC
Collector current (d.c.) ICmax 300 mA
Collector-emitter voltage (open base)
Total power dissipation up to Ptot max 250
Collector-emmitter voltage (open base)
Collector-base voltage (open emitter) VCBO max 30
VBE = 0
Transition frequency at f = 100MHZfTmin 125
NPN Small-Signal Darlington Transistors
CMBTA13
Ratings (at TA = 25oC unless otherwise specified)
Limmiting values
Unit: inch (mm)
Pin configuration:
1. BASE
2. EMITTER
3. COLLECTOR
1
2
3
Absolute Maximum Ratings
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CMBTA13
Transition frequency at f = 100 MHZfT min 125 MHZ
IC = 10mA; VCE = 5V
Emitter-base cut-off current ICBO max 0.1 uA
VCB = 10 V
Value UNIT
V
Base-emitter On voltage VBE(on) max 2 V
IC = 100mA; VCE = 5V
Collector-emitter saturation voltage VCEsat max 1.5
IC = 100mA; IB = 0.1 mA
IC = 100mA; VCE = 5V min 10000
hFE
D.C. current gain
min 5000
IC = 10mA; VCE = 5V
Symbol
min 30 V
IC = 100 uA
Emitter-base cut-off current IEBO max 0.1 uA
VBE = 10 V
Collector-emitter breakdown voltage V(BR)CES
Characteristics (at Ta=25 oC unless otherwise specified)
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