SiT8008 Low Power Programmable Oscillator The Smart Timing Choice The Smart Timing Choice Features Applications Any frequency between 1 MHz and 110 MHz accurate to 6 decimal places Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books, SSD, GPON, EPON, etc Operating temperature from -40C to 85C. Refer to SiT8918 and SiT8920 for high temperature options Ideal for high-speed serial protocols such as: USB, SATA, SAS, Firewire, 100M / 1G / 10G Ethernet, etc. Excellent total frequency stability as low as 20 PPM Low power consumption of 3.6 mA typical Programmable drive strength for improved jitter, system EMI reduction, or driving large capacitive loads LVCMOS/HCMOS compatible output Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm Instant samples with Time Machine II and field programmable oscillators Pb-free, RoHS and REACH compliant Electrical Characteristics[1] Parameter and Conditions Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range f 1 - 110 MHz Frequency Stability and Aging Frequency Stability F_stab -20 - +20 PPM -25 - +25 PPM - +50 PPM -50 Inclusive of Initial tolerance at 25C, 1st year aging at 25C, and variations over operating temperature, rated power supply voltage and load (15 pF 10%). Operating Temperature Range Operating Temperature Range T_use -20 - +70 C Extended Commercial -40 - +85 C Industrial Supply Voltage and Current Consumption Supply Voltage Current Consumption Vdd Idd 1.62 1.8 1.98 V 2.25 2.5 2.75 V Contact SiTime for 1.5V support 2.52 2.8 3.08 V 2.7 3.0 3.3 V 2.97 3.3 3.63 V 2.25 - 3.63 V - 3.8 4.5 mA No load condition, f = 20 MHz, Vdd = 2.8V, 3.0V, 3.3V, 2.25V to 3.63V - 3.6 4.2 mA No load condition, f = 20 MHz, Vdd = 2.5V - 3.4 3.9 mA No load condition, f = 20 MHz, Vdd = 1.8V - 4 mA Vdd = 2.5V to 3.3V, OE = GND, output is Weakly Pulled Down Vdd = 1.8V, OE = GND, output is Weakly Pulled Down OE Disable Current I_OD - - - 3.8 mA Standby Current I_std - 2.6 4.3 A ST = GND, Vdd = 2.8V to 3.3V, Output is Weakly Pulled Down - 1.4 2.5 A ST = GND, Vdd = 2.5V, Output is Weakly Pulled Down 0.6 1.3 A ST = GND, Vdd = 1.8V, Output is Weakly Pulled Down - LVCMOS Output Characteristics Duty Cycle Rise/Fall Time DC 45 - 55 % Tr, Tf - 1 2 ns All Vdds Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80% - 1.3 2.5 ns Vdd =1.8V, 20% - 80% - - 2 ns Output High Voltage VOH 90% - - Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V) IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V) IOH = -2 mA (Vdd = 1.8V) Vdd = 2.25V - 3.63V, 20% - 80% Output Low Voltage VOL - - 10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V) IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V) IOL = 2 mA (Vdd = 1.8V) Input High Voltage VIH 70% - - Vdd Input Low Voltage VIL - - 30% Vdd Pin 1, OE or ST Input Pull-up Impedence Z_in - 87 100 k Pin 1, OE logic high or logic low, or ST logic high Input Characteristics Pin 1, OE or ST 2 - - M Pin 1, ST logic low Note: 1. All electrical specifications in the above table are specified with 15 pF output load at default drive strength and for all Vdd(s) unless otherwise stated. SiTime Corporation Rev. 1.11 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Revised May 27, 2013 SiT8008 Low Power Programmable Oscillator The Smart Timing Choice The Smart Timing Choice Electrical Characteristics[1] (continued) Parameter and Conditions Symbol Min. Typ. Max. Unit Condition Startup and Resume Timing Startup Time T_start - - 5 ms Measured from the time Vdd reaches its rated minimum value T_oe - - 130 ns f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles T_resume - - 5 ms Measured from the time ST pin crosses 50% threshold Enable/Disable Time Resume Time Jitter RMS Period Jitter T_jitt RMS Phase Jitter (random) T_phj - 1.76 3 ps f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V - 1.78 3 ps f = 75 MHz, Vdd = 1.8V - 0.5 0.9 ps f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz - 1.3 2 ps f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz Note: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. Pin Description Pin Symbol Functionality Output Enable 1 H or Open[2]: specified frequency output L: output is high impedance. Only output driver is disabled. Top View [2] OE/ ST Standby H or Open : specified frequency output L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I_std. OE/ST 1 4 VDD GND 2 3 OUT Electrical ground[3] 2 GND Power 3 OUT Output Oscillator output 4 VDD Power Power supply voltage[3] Notes: 2. A pull-up resistor of <10 k between OE/ ST pin and Vdd is recommended in high noise environment. 3. A capacitor value of 0.1 F between Vdd and GND is recommended. Absolute Maximum Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Min. Max. Unit Storage Temperature Parameter -65 150 C VDD -0.5 4 V Electrostatic Discharge - 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) - 260 C Junction Temperature - 150 C Thermal Consideration JC, Bottom Package JA, 4 Layer Board (C/W) JA, 2 Layer Board (C/W) 7050 191 263 30 5032 97 199 24 3225 109 212 27 2520 117 222 26 2016 124 227 26 (C/W) Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 @ 260C Rev. 1.11 Page 2 of 11 www.sitime.com SiT8008 Low Power Programmable Oscillator The Smart Timing Choice The Smart Timing Choice Test Circuit and Waveform[4] Vdd Vout 0.1F tr 3 4 Power Supply Test Point 1 tf 80% Vdd 15pF (including probe and fixture capacitance) 2 50% 20% Vdd High Pulse (TH) Low Pulse (TL) Period Vdd OE/ST Function 1k Figure 1. Test Circuit Figure 2. Waveform Note: 4. Duty Cycle is computed as Duty Cycle = TH/Period. Timing Diagrams 90% Vdd, 2.5/2,8/3.3V devices Vdd 95% Vdd, 1.8V devices Vdd Pin 4 Voltage ST Voltage 50% Vdd NO Glitch first cycle T_resume T_start CLK Output CLK Output T_start: Time to start from power-off T_resume: Time to resume from ST Figure 3. Startup Timing (OE/ST Mode) Figure 4. Standby Resume Timing (ST Mode Only) u Vdd Vdd OE Voltage 50% Vdd T_OE OE Voltage 50% Vdd CLK Output CLK Output T_OE HZ T_OE: Time to re-enable the clock output T_OE: Time to put the output drive in High Z mode Figure 5. OE Enable Timing (OE Mode Only) Figure 6. OE Disable Timing (OE Mode Only) Note: 5. SiT8008 supports no runt pulses and no glitches during startup or resume. Rev. 1.11 Page 3 of 11 www.sitime.com SiT8008 Low Power Programmable Oscillator The Smart Timing Choice The Smart Timing Choice Performance Plots 1.8 2.5 2.8 3 1.8 V 3.3 RMS period jitter (ps) 5.5 Idd (mA) 2.5 V 2.8 V 3.0 V 3.3 V 4.0 6.0 5.0 4.5 4.0 3.5 3.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 10 20 30 40 50 60 70 80 90 100 0 110 10 20 30 Frequency (MHz) Figure 7. Idd vs Frequency 1.8 V 2.5 V 2.8 V 40 50 60 70 80 90 100 110 Frequency (MHz) 3.0 V Figure 8. RMS Period Jitter vs Frequency 1.8 V 3.3 V 2.5 V 2.8 V 3.0 V 3.3 V 0.9 2.0 0.85 0.8 1.8 IPJ (ps) IPJ (ps) 0.75 1.6 1.4 0.7 0.65 0.6 0.55 0.5 1.2 0.45 0.4 1.0 10 30 50 70 90 10 110 30 50 Frequency (MHz) Figure 9. RMS Phase Jitter vs Frequency (12 kHz to 20 MHz Integration Bandwidth) 1.8 V 2.5 V 90 110 Figure 10. RMS Phase Jitter vs Frequency (900 kHz to 20 MHz Integration Bandwidth) 2.8 V 1.8 V 55 2.5 V 2.8 V 3.0 V 3.3 V 2.5 54 53 2.0 52 Rise Time (ns) Duty Cycle (%) 70 Frequency (MHz) 51 50 49 48 1.5 1.0 0.5 47 46 0.0 45 0 10 20 30 40 50 60 70 80 90 100 -40 110 Frequency (MHz) Figure 11. Duty Cycle vs Frequency -15 10 35 60 85 Temperature (C) Figure 12. Rise Time vs Temperature, 20 MHz Output Note: 6. All plots are measured with 15 pF load at room temperature, unless otherwise stated. Rev. 1.11 Page 4 of 11 www.sitime.com SiT8008 Low Power Programmable Oscillator The Smart Timing Choice The Smart Timing Choice Programmable Drive Strength The SiT8008 includes a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. Benefits from the programmable drive strength feature are: * Improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time * Improves the downstream clock receiver's (RX) jitter by decreasing (speeding up) the clock rise/fall time. * Ability to drive large capacitive loads while maintaining full swing with sharp edge rates. For more detailed information about rise/fall time control and drive strength selection, see the SiTime Applications Note section; http://www.sitime.com/support/application-notes. EMI Reduction by Slowing Rise/Fall Time Figure 13 shows the harmonic power reduction as the rise/fall times are increased (slowed down). The rise/fall times are expressed as a ratio of the clock period. For the ratio of 0.05, the signal is very close to a square wave. For the ratio of 0.45, the rise/fall times are very close to near-triangular waveform. These results, for example, show that the 11th clock harmonic can be reduced by 35 dB if the rise/fall edge is increased from 5% of the period to 45% of the period. trise=0.05 trise=0.1 trise=0.15 trise=0.2 trise=0.25 trise=0.3 10 Harmonic amplitude (dB) 0 -10 choose to speed up the rise/fall time to 1.68ns by then increasing the drive strength setting on the SiT8008. The SiT8008 can support up to 60 pF or higher in maximum capacitive loads with up to 3 additional drive strength settings. Refer to the Rise/Tall Time Tables to determine the proper drive strength for the desired combination of output load vs. rise/fall time SiT8008 Drive Strength Selection Tables 1 through 5 define the rise/fall time for a given capacitive load and supply voltage. 1. Select the table that matches the SiT8008 nominal supply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V). 2. Select the capacitive load column that matches the application requirement (5 pF to 60 pF) 3. Under the capacitive load column, select the desired rise/fall times. 4. The left-most column represents the part number code for the corresponding drive strength. 5. Add the drive strength code to the part number for ordering purposes. Calculating Maximum Frequency Based on the rise and fall time data given in Tables 1 through 4, the maximum frequency the oscillator can operate with guaranteed full swing of the output voltage over temperature as follows: trise=0.35 trise=0.4 -20 Max Frequency = trise=0.45 1 6 x (Trise) -30 -40 Example 1 -50 -60 Calculate fMAX for the following condition: -70 -80 1 3 5 7 9 11 Harm onic num ber Figure 13. Harmonic EMI reduction as a Function of Slower Rise/Fall Time Jitter Reduction with Faster Rise/Fall Time Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to increase rise/fall time (edge rate) of the input clock. Some chipsets would require faster rise/fall time in order to reduce their sensitivity to this type of jitter. The SiT8008 provides up to 3 additional high drive strength settings for very fast rise/fall time. Refer to the Rise/Fall Time Tables to determine the proper drive strength. * Vdd = 1.8V (Table 1) * Capacitive Load: 30 pF * Desired Tr/f time = 3 ns (rise/fall time part number code = E) Part number for the above example: SiT8008AIE12-18E-25.000000T Drive strength code is inserted here. Default setting is "-" High Output Load Capability The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. As an example, for a 3.3V SiT8008 device with default drive strength setting, the typical rise/fall time is 1ns for 15 pF output load. The typical rise/fall time slows down to 2.6ns when the output load increases to 45 pF. One can Rev. 1.11 Page 5 of 11 www.sitime.com SiT8008 Low Power Programmable Oscillator The Smart Timing Choice The Smart Timing Choice Rise/Fall Time (20% to 80%) vs CLOAD Tables Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L A R B T E U F or "": default 6.16 3.19 2.11 1.65 0.93 0.78 0.70 0.65 11.61 6.35 4.31 3.23 1.91 1.66 1.48 1.30 22.00 11.00 7.65 5.79 3.32 2.94 2.64 2.40 31.27 16.01 10.77 8.18 4.66 4.09 3.68 3.35 39.91 21.52 14.47 11.08 6.48 5.74 5.09 4.56 L A R B T E or "": default U F 4.13 2.11 1.45 1.09 0.62 8.25 4.27 2.81 2.20 1.28 12.82 7.64 5.16 3.88 2.27 21.45 11.20 7.65 5.86 3.51 27.79 14.49 9.88 7.57 4.45 0.54 0.43 0.34 1.00 0.96 0.88 2.01 1.81 1.64 3.10 2.79 2.54 4.01 3.65 3.32 Table 1. Vdd = 1.8V Rise/Fall Times for Specific CLOAD Table 2. Vdd = 2.5V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L A R B T 3.77 1.94 1.29 0.97 0.55 7.54 3.90 2.57 2.00 1.12 12.28 7.03 4.72 3.54 2.08 19.57 10.24 7.01 5.43 3.22 25.27 13.34 9.06 6.93 4.08 E or "": default U F 0.44 0.34 0.29 1.00 0.88 0.81 1.83 1.64 1.48 2.82 2.52 2.29 3.67 3.30 2.99 L A R B T or "": default E U F 3.60 1.84 1.22 0.89 0.51 0.38 0.30 0.27 7.21 3.71 2.46 1.92 1.00 0.92 0.83 0.76 11.97 6.72 4.54 3.39 1.97 1.72 1.55 1.39 18.74 9.86 6.76 5.20 3.07 2.71 2.40 2.16 24.30 12.68 8.62 6.64 3.90 3.51 3.13 2.85 Table 3. Vdd = 2.8V Rise/Fall Times for Specific CLOAD Table 4. Vdd = 3.0V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L A R B 3.39 1.74 1.16 0.81 6.88 3.50 2.33 1.82 11.63 6.38 4.29 3.22 17.56 8.98 6.04 4.52 23.59 12.19 8.34 6.33 T or "": default E U F 0.46 0.33 0.28 0.25 1.00 0.87 0.79 0.72 1.86 1.64 1.46 1.31 2.60 2.30 2.05 1.83 3.84 3.35 2.93 2.61 Table 5. Vdd = 3.3V Rise/Fall Times for Specific CLOAD Rev. 1.11 Page 6 of 11 www.sitime.com SiT8008 Low Power Programmable Oscillator The Smart Timing Choice The Smart Timing Choice Instant Samples with Time Machine and Field Programmable Oscillators SiTime supports a field programmable version of the SiT8008 low power oscillator for fast prototyping and real time customization of features. The field programmable devices (FP devices) are available for all five standard SiT8008 package sizes and can be configured to one's exact specification using the Time Machine II, an USB powered MEMS oscillator programmer. For more information regarding SiTime's field programmable solutions, visit http://www.sitime.com/time-machine and http://www.sitime.com/fp-devices. SiT8008 is typically factory-programmed per customer ordering codes for volume delivery. Customizable Features of the SiT8008 FP Devices Include * Any frequency between 1 - 110 MHz * Three frequency stability options, 20 PPM, 25 PPM, 50 PPM * Two operating temperatures, -20 to 70C or -40 to 85C * Five supply voltage options, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V and 2.25 to 3.65V continuous * Output drive strength Rev. 1.11 Page 7 of 11 www.sitime.com SiT8008 Low Power Programmable Oscillator The Smart Timing Choice The Smart Timing Choice Dimensions and Patterns Package Size - Dimensions (Unit: mm)[7] Recommended Land Pattern (Unit: mm)[8] 2.0 x 1.6 x 0.75 mm 0.65 2.00.05 #3 #1 0.48 1.2 0.750.05 YXXXX #2 1.5 #4 0.93 1.60.05 #3 #2 #1 0.8 #4 0.68 0.9 2.5 x 2.0 x 0.75 mm 1.9 2.2 2.5 0.05 #3 #2 #2 1.5 1.9 1.0 1.2 #1 0.5 YXXXX #4 1.1 #3 2.0 0.05 #4 1.00 #1 0.75 0.05 0.75 1.1 1.4 3.2 x 2.5 x 0.75 mm 3.2 0.05 #3 #4 0.7 1.9 0.9 #2 #1 0.9 0.75 0.05 #2 1.2 YXXXX #1 2.2 2.1 #3 2.5 0.05 #4 1.4 5.0 x 3.2 x 0.75 mm 2.54 5.0 0.05 #4 #2 #1 1.1 2.2 0.8 #3 1.6 #2 0.75 0.05 YXXXX #1 2.39 #3 3.2 0.05 #4 1.15 1.5 Notes: 7. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of "Y" will depend on the assembly location of the device. 8. A capacitor value of 0.1 F between Vdd and GND is recommended. Rev. 1.11 Page 8 of 11 www.sitime.com SiT8008 Low Power Programmable Oscillator The Smart Timing Choice The Smart Timing Choice Dimensions and Patterns Package Size - Dimensions (Unit: mm)[9] Recommended Land Pattern (Unit: mm)[10] 7.0 x 5.0 x 0.90 mm 5.08 3.81 2.6 5.08 2.0 0.90 0.10 1.1 YXXXX 5.0 0.05 7.0 0.05 1.4 2.2 Notes: 9.Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of "Y" will depend on the assembly location of the device. 10.A capacitor value of 0.1 F between Vdd and GND is recommended. Rev. 1.11 Page 9 of 11 www.sitime.com SiT8008 Low Power Programmable Oscillator The Smart Timing Choice The Smart Timing Choice Ordering Information SiT8008AC -12-18E - 2 5 .000625T Packing Method "T": 12/16 mm Tape & Reel, 3ku reel "Y": 12/16 mm Tape & Reel, 1ku reel "D": 8 mm Tape & Reel, 3ku reel "E": 8 mm Tape & Reel, 1ku reel Blank for Bulk Part Family "SiT8008" Revision Letter "A" is the revision Frequency 1.000000 to 110.000000 MHz Temperature Range "C" Commercial, -20C to 70C "I" Industrial, -40C to 85C Feature Pin "E" for Output Enable "S" for Standby Output Drive Strength "-" Default (datasheet limits) See Tables 1 to 5 for rise/fall times "L" "A" "R" "B" Supply Voltage "18" for 1.8V 10% "25" for 2.5V 10% "28" for 2.8V 10% "30" for 3.0V 10% "33" for 3.3V 10% "XX" for 2.25V to 3.63V "T" "E" "U" "F" Package Size "7" "1" "2" "3" "8" Frequency Stability 2.0 x 1.6 mm 2.5 x 2.0 mm 3.2 x 2.5 mm 5.0 x 3.2 mm 7.0 x 5.0 mm "1" for 20 PPM "2" for 25 PPM "3" for 50 PPM Ordering Codes for Supported Tape & Reel Packing Method[11] Device Size 8 mm T&R (3ku) 8 mm T&R (1ku) 12 mm T&R (3ku) 12 mm T&R (1ku) 16 mm T&R (3ku) 16 mm T&R (1ku) 2.0 x 1.6 mm D E - - - - 2.5 x 2.0 mm D E - - - - 3.2 x 2.5 mm D E - - - - 5.0 x 3.2 mm - - T Y - - 7.0 x 5.0 mm - - - - T Y Note: 11. For "-", contact SiTime for availability. Rev. 1.11 Page 10 of 11 www.sitime.com SiT8008 Low Power Programmable Oscillator The Smart Timing Choice The Smart Timing Choice Additional Information Document Description Download Link Time Machine II MEMS oscillator programmer http://www.sitime.com/support/time-machine-oscillator-programmer Field Programmable Oscillators Devices that can be programmable in the field by Time Machine II http://www.sitime.com/products/field-programmable-oscillators Manufacturing Notes Tape & Reel dimension, reflow profile and other manufacturing related info http://www.sitime.com/component/docman/doc_download/85-manu facturing-notes-for-sitime-oscillators Qualification Reports RoHS report, reliability reports, composition reports http://www.sitime.com/support/quality-and-reliability Performance Reports Additional performance data such as phase noise, current consumption and jitter for selected frequencies http://www.sitime.com/support/performance-measurement-report Termination Techniques Termination design recommendations http://www.sitime.com/support/application-notes Layout Techniques Layout recommendations http://www.sitime.com/support/application-notes (c) SiTime Corporation 2013. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress. 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CRITICAL USE EXCLUSION POLICY BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE. SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly prohibited. Rev. 1.11 Page 11 of 11 www.sitime.com The Smart Timing Choice The Smart Timing Choice Supplemental Information The Supplemental Information section is not part of the datasheet and is for informational purposes only. SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com The Smart Timing Choice The Smart Timing Choice Silicon MEMS Outperforms Quartz SiTime Corporation 990 Almanor Avenue Silicon MEMS Outperforms Quartz Rev. 1.0 Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Revised January 16, 2013 Silicon MEMS Outperforms Quartz The Smart Timing Choice The Smart Timing Choice Best Reliability Best Electro Magnetic Susceptibility (EMS) Silicon is inherently more reliable than quartz. Unlike quartz suppliers, SiTime has in-house MEMS and analog CMOS expertise, which allows SiTime to develop the most reliable products. Figure 1 shows a comparison with quartz technology. SiTime's oscillators in plastic packages are up to 54 times more immune to external electromagnetic fields than quartz oscillators as shown in Figure 3. Why is SiTime Best in Class: * SiTime's MEMS resonators are vacuum sealed using an advanced Epi-SealTM process, which eliminates foreign particles and improves long term aging and reliability * World-class MEMS and CMOS design expertise Why is SiTime Best in Class: * Internal differential architecture for best common mode noise rejection * Electrostatically driven MEMS resonator is more immune to EMS SiTime vs Quartz Electro Magnetic Susceptibility (EMS) Mean Time Between Failure (Million Hours) - 30 - 39 500 IDT (Fox) 38 SiTime 20X Better 28 Epson TXC 16 Pericom 14 Average Spurs (dB) SiTime - 40 - 40 - 42 - 43 - 45 - 50 - 60 SiTime 54X Better - 70 - 73 - 80 - 90 200 0 Kyocera 600 400 Figure 1. Reliability Comparison[1] Epson TXC CW SiLabs SiTime Figure 3. Electro Magnetic Susceptibility (EMS)[3] Best Aging Best Power Supply Noise Rejection Unlike quartz, MEMS oscillators have excellent long term aging performance which is why every new SiTime product specifies 10-year aging. A comparison is shown in Figure 2. SiTime's MEMS oscillators are more resilient against noise on the power supply. A comparison is shown in Figure 4. * SiTime's MEMS resonators are vacuum sealed using an advanced Epi-SealTM process, which eliminates foreign particles and improves long term aging and reliability * Inherently better immunity of electrostatically driven MEMS resonator SiTime MEMS vs. Quartz Aging 10 SiTime MEMS Oscillator Quartz Oscillator 8.0 Aging (PPM) 8 SiTime 2X Better 6 4 2 0 3.0 3.5 1.5 1-Year 10-Year Figure 2. Aging Comparison[2] Silicon MEMS Outperforms Quartz Rev. 1.0 Why is SiTime Best in Class: * On-chip regulators and internal differential architecture for common mode noise rejection * Best analog CMOS design expertise Additive Integrated Phase Jitter per mVp-p Injected Noise (ps/mv) Why is SiTime Best in Class: Power Supply Noise Rejection SiTIme 5.0 NDK Epson Kyocera 4.0 3.0 2.0 SiTime SiTime 3X Better 1.0 0.0 10 100 1,000 Power Supply Noise Frequency (kHz) 10,000 Figure 4. Power Supply Noise Rejection[4] www.sitime.com Silicon MEMS Outperforms Quartz The Smart Timing Choice The Smart Timing Choice Best Vibration Robustness Best Shock Robustness High-vibration environments are all around us. All electronics, from handheld devices to enterprise servers and storage systems are subject to vibration. Figure 5 shows a comparison of vibration robustness. SiTime's oscillators can withstand at least 50,000 g shock. They all maintain their electrical performance in operation during shock events. A comparison with quartz devices is shown in Figure 6. Why is SiTime Best in Class: Why is SiTime Best in Class: * The moving mass of SiTime's MEMS resonators is up to 3000 times smaller than quartz * Center-anchored MEMS resonator is the most robust design * The moving mass of SiTime's MEMS resonators is up to 3000 times smaller than quartz * Center-anchored MEMS resonator is the most robust design Vibration Sensitivity (ppb/g) TXC Epson Connor Winfield Kyocera SiLabs 100.00 10.00 1.00 SiTime Up to 30x Better 0.10 10 100 Vibration Frequency (Hz) Figure 5. Vibration Robustness[5] 1000 Peak Frequency Deviation (PPM) Vibration Sensitivity vs. Frequency SiTime 16 14 Differential XO Shock Robustness - 500 g 14.3 12.6 12 10 8 SiTime Up to 25x Better 6 3.9 4 2.9 2.5 2 0.6 0 Kyocera Epson TXC CW SiLabs SiTime Figure 6. Shock Robustness[6] Notes: 1. Data Source: Reliability documents of named companies. 2. Data source: SiTime and quartz oscillator devices datasheets. 3. Test conditions for Electro Magnetic Susceptibility (EMS): * According to IEC EN61000-4.3 (Electromagnetic compatibility standard) * Field strength: 3V/m * Radiated signal modulation: AM 1 kHz at 80% depth * Carrier frequency scan: 80 MHz - 1 GHz in 1% steps * Antenna polarization: Vertical * DUT position: Center aligned to antenna Devices used in this test: SiTime, SiT9120AC-1D2-33E156.250000 - MEMS based - 156.25 MHz Epson, EG-2102CA 156.2500M-PHPAL3 - SAW based - 156.25 MHz TXC, BB-156.250MBE-T - 3rd Overtone quartz based - 156.25 MHz Kyocera, KC7050T156.250P30E00 - SAW based - 156.25 MHz Connor Winfield (CW), P123-156.25M - 3rd overtone quartz based - 156.25 MHz SiLabs, Si590AB-BDG - 3rd overtone quartz based - 156.25 MHz 4. 50 mV pk-pk Sinusoidal voltage. Devices used in this test: SiTime, SiT8208AI-33-33E-25.000000, MEMS based - 25 MHz NDK, NZ2523SB-25.6M - quartz based - 25.6 MHz Kyocera, KC2016B25M0C1GE00 - quartz based - 25 MHz Epson, SG-310SCF-25M0-MB3 - quartz based - 25 MHz 5. Devices used in this test: same as EMS test stated in Note 3. 6. Test conditions for shock test: * MIL-STD-883F Method 2002 * Condition A: half sine wave shock pulse, 500-g, 1ms * Continuous frequency measurement in 100 s gate time for 10 seconds Devices used in this test: same as EMS test stated in Note 3 7. Additional data, including setup and detailed results, is available upon request to qualified customers. Please contact productsupport@sitime.com. Silicon MEMS Outperforms Quartz Rev. 1.0 www.sitime.com Document Feedback Form The Smart Timing Choice The Smart Timing Choice SiTime values your input in improving our documentation. Click here for our online feedback form or fill out and email the form below to productsupport@sitime.com 1. 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