July 2007 Rev 7 1/38
1
M93C86, M93C76, M93C66
M93C56, M93C46
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide)
MICROWIRE® serial access EEPROM
Features
●Industry standard MICROWIRE bus
●Single supply voltage:
– 4.5 V to 5.5 V for M93Cx6
– 2.5 V to 5.5 V for M93Cx6-W
– 1.8 V to 5.5 V for M93Cx6-R
●Dual organization: by w ord (x16) or byte (x8)
●Progr amming instructions that w ork on: b yte,
word or en tire memory
●Self-timed programming cycle with auto-
erase: 5 ms
●READY/BUSY signal during programming
●2 MHz clock rate
●Sequential read operation
●Enhanced ESD/latch-up behavior
●More than 1 million write cycles
●More than 40 year data retention
●Packages
– ECOPACK® (RoHS compliant)
Table 1. Product list
Reference Part
number Reference Part
number
M93C86
M93C86
M93C56
M93C56
M93C86-W M93C56-W
M93C86-R M93C56-R
M93C66
M93C66
M93C46
M93C46
M93C66-W M93C46-W
M93C66-R M93C46-R
M93C76 M93C76
M93C76-W
PDIP8 (BN)
SO8 (MN)
150 mil width
TSSOP8 (DW)
169 mil width
UFDFPN8 (MB)
2 x 3 mm (MLP)
www.st.com
Contents M93C86, M93C76, M93C66, M93C56, M93C46
2/38
Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2 Connecting to the serial bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3 Operating features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.1 Supply voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.1.1 Operating supply voltage VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
3.1.2 Power-up conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.1.3 Power-up and device reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.1.4 Power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Memory organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.1 Read Data from Memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.2 Write Enable and Write Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.3 Erase Byte or Word . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.4 Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.5 Erase All . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.6 Write All . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6 READY/BUSY status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
7 Initial delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
8 Common I/O operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
9 Clock pulse counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
10 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
11 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
12 Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
List of tables M93C86, M93C76, M93C66, M93C56, M93C46
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List of tables
Table 1. Product list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table 2. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 3. Memory size versus organization. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 4. Instruction set for the M93Cx6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 5. Instruction set for the M93C46 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 6. Instruction set for the M93C56 and M93C66 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 7. Instruction set for the M93C76 and M93C86 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 8. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Table 9. Operating conditions (M93Cx6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Table 10. Operating conditions (M93Cx6-W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Table 11. Operating conditions (M93Cx6-R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Table 12. AC measurement conditions (M93Cx6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Table 13. AC measurement conditions (M93Cx6-W and M93Cx6-R) . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 14. Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 15. DC characteristics (M93Cx6, device grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 16. DC characteristics (M93Cx6, device grade 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 17. DC characteristics (M93Cx6-W, device grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 18. DC characteristics (M93Cx6-W, device grade 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Table 19. DC characteristics (M93Cx6-R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4
Table 20. AC characteristics (M93Cx6, device grade 6 or 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 21. AC characteristics (M93Cx6-W, device grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 22. AC characteristics (M93Cx6-W, device grade 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Table 23. AC characteristics (M93Cx6-R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 24. PDIP8 – 8 lead plastic dual in-line package, 300 mils body width, package
mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 25. SO8 narrow – 8 lead plastic small outline, 150 mils body width, package data . . . . . . . . . 30
Table 26. UFDFPN8 (MLP8) 8-lead ultra thin fine pitch dual f lat package no lead 2 x 3 mm, data . . 31
Table 27. TSSOP8 – 8 lead thin shrink small outline, package mechanical data. . . . . . . . . . . . . . . . 32
Table 28. Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 29. Available M93C46-x products (package, voltage range, temperature grade). . . . . . . . . . . 34
Table 30. Available M93C56-x products (package, voltage range, temperature grade). . . . . . . . . . . 34
Table 31. Available M93C66-x products (package, voltage range, temperature grade). . . . . . . . . . . 34
Table 32. Available M93C76-x products (package, voltage range, temperature grade). . . . . . . . . . . 34
Table 33. Available M93C86-x products (package, voltage range, temperature grade). . . . . . . . . . . 35
Table 34. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
M93C86, M93C76, M93C66, M93C56, M93C46 List of figures
5/38
List of figures
Figure 1. Logic diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 2. DIP, SO, TSSOP and MLP connections (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 3. Bus master and memory devices on the serial bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 4. READ, WRITE, WEN, WDS sequences. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 5. ERASE, ERAL sequences . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 6. WRAL sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 7. Write sequence with one clock glitch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 8. AC testing input output waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 9. Synchronous timing (start and op-code input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 10. Synchronous timing (Read or Write). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 11. Synchronous timing (Read or Write). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 12. PDIP8 – 8 lead plastic dual in-line package, 300 mils body width, package
outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 13. SO8 narrow – 8 lead plastic small outline, 150 mils body width, package outline . . . . . . . 30
Figure 14. UFDFPN8 (MLP8) 8-lead ultra thin fine pitch dual f lat package no lead 2 x 3 mm, outline 31
Figure 15. TSSOP8 – 8 lead thin shrink small outline, package outline . . . . . . . . . . . . . . . . . . . . . . . 32
Description M93C86, M93C76, M93C66, M93C56, M93C46
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1 Description
The M93C86, M93C76, M93C66, M93C56 and M93C56 ar e electrically erasable
programmab le memory (EEPROM) devices. The y are accessed through a Serial Data input
(D) and Serial Data output (Q) using the MICRO WIRE bus protocol.
In order to meet environmental requirements, ST offers these devices in ECOPACK®
pac kages. ECOPACK® packages are lead-free and RoHS compliant. ECOPACK is an ST
tradema rk. ECOPACK specifications are available at: www.st.com.
Figure 1. Logic diagram
The memory array organization may be divided into either bytes (x8) or words (x16) which
may be selected by a signal applied on Organization Select ( ORG). The bit, b yte and word
sizes of the memories are as shown in Table 3.
Table 2. Signal names
Signal name Function Direction
S Chip Select Input
D Serial Data input Input
Q Serial Data output Output
C Serial Clock Input
ORG Organisation Select Input
VCC Supply voltage
VSS Ground
AI01928
D
VCC
M93Cx6
VSS
C
Q
S
ORG
M93C86, M93C76, M93C66, M93C56, M93C46 Description
7/38
The M93Cx6 is accessed by a set of instructions, as summarized in Table 4., and in more
detail in Table 5. to Table 7.).
A Read Data from Memory (READ) instruction loads the address of the first byte or word to
be read in an internal address register. The data at this address is then clocked out serially.
The address reg ister is automatically incremen ted after the data is output and, if Chip Select
Input (S) is held High, the M93Cx6 can output a sequential stream of data b ytes or words. In
this way, the memory can be read as a data stream from eight to 16384 bits long (in the
case of the M93C86), or continuously (the address counter automatically rolls over to 00h
when the highest add ress is reached).
Programming is internally self-timed (the external clock signal on Serial Clock (C) may be
stopped or left running after the start of a Write cycle) and does not require an Erase cycle
prior to the Write instruction. The Write instruction writes 8 or 16 bits at a time into one of the
byte or word locations of the M93Cx6. After the start of the programming cycle, a
Busy/Ready signal is available on Serial Data Output (Q) when Chip Select Input (S) is
driven High.
An internal Power-on Data Protection mechanism in the M93Cx6 inhibits the device when
the supply is too low.
Table 3. Memory size versus organization
Device Number of bits Number of 8-bit bytes Number of 16-bit words
M93C86 16384 2048 1024
M93C76 8192 1024 512
M93C66 4096 512 256
M93C56 2048 256 128
M93C46 1024 128 64
Table 4. Instruction set for the M93Cx6
Instruction Description Data
READ Read Data from Memory Byte or Word
WRITE Write Data to Memory Byte or Word
WEN Write Enab le
WDS Write Disable
ERASE Erase Byte or Word Byte or Wo rd
ERAL Erase All Memory
WRAL Write All Memory
with same Data
Description M93C86, M93C76, M93C66, M93C56, M93C46
8/38
Figure 2. DIP, SO, TSSOP and MLP connections (top view)
1. See Package mechanical section for package dimensions, and how to identify pin-1.
2. DU = Don’t Use.
The DU (do not use ) pin does not contribute to the normal operation of the device. It is
reserved for use by STMicroelectro nics during test sequences. The pin may be left
unconnected or may be connected to VCC or VSS.
VSS
QORG
DUC
SV
CC
D
AI01929B
M93Cx6
1
2
3
4
8
7
6
5
M93C86, M93C76, M93C66, M93C56, M93C4 6 Connecting to the serial bus
9/38
2 Connecting to the serial bu s
Figure 3. Bu s mas te r and memo ry devices on the serial bus
Figure 3 shows a n e xample of three memory de vices connected to an MCU , on a serial bus.
Only one device is selected at a time, so only one device drives the Serial Data Outp ut (Q)
line at a time , the other devices are high impedance.
The pull-down resistor R (represented in Figure 3) ensures that no device is selected if the
Bus Master leaves the S line in the high impedance state.
AI14377
Bus master
M93xxx
memory device
SDO
SDI
SCK
CQD
S
M93xxx
memory device
CQD
S
M93xxx
memory device
CQD
S
CS3 CS2 CS1
ORG ORG ORG
RR R
V
CC
V
CC
V
CC
V
CC
V
SS
V
SS
V
SS
V
SS
Operating features M93C86, M93C76, M93C66, M93C56, M93C46
10/38
3 Operating features
3.1 Supply voltage (VCC)
3.1.1 Operating supply voltage VCC
Prior to selecting the memory and issuing instructions to it, a valid and stable VCC voltage
within the specified [VCC(m in), VCC(max)] range must be applied. In order to secure a stable
DC supply voltage, it is recommended to decouple the VCC line with a suitable capacitor
(usually of the order of 10 nF to 100 nF) close to the VCC/VSS package pins.
This v oltage m ust remain st ab le and v a lid until the end of the tr an smission of the instruction
and, for a Write instruction, until the completion of the internal write cycle (tW).
3.1.2 Power-up conditions
When the power supply is turned on, VCC rises from VSS to VCC. During this time, the Chip
Select (S) line is not allowed to float and should be driven to VSS, it is therefore
recommended to connect the S line to VCC via a suitable pull-down resistor.
The VCC rise time must not vary faster than 1 V/µs.
3.1.3 Power-up and device reset
In order to prevent inadvertent Write operations during power-up, a power on reset (POR)
circuit is included. At po wer- up (continuou s rise of VCC), the device does not respond to an y
instruction until V CC has reached the power on reset threshold voltage (this threshold is
lower than the minimum VCC operating voltage defined in Table 9, Table 10 and Table 11).
When VCC passes the POR thre shold, the device is reset and is in the following state:
●Standby Power mode
●deselected (assuming that there is a pull-down resistor on the S line)
3.1.4 Power-down
At power-down (continuous decrease in VCC), as soon as VCC drops from the normal
operat ing voltage to below the power on reset threshold voltage, the device stops
responding to any instruction sent to it.
During pow er-down, the device must be deselected and in the Standby P o wer mode (that is,
there should be no internal Write cycle in progress).
M93C86, M93C76, M93C66, M93C56, M93C46 Memory organization
11/38
4 Memory organization
The M93Cx6 memory is organized either as bytes (x8) or as words (x16). If Organization
Select (ORG) is left unconnected (or connected to VCC) the x16 orga nization is selected;
when Organization Select (ORG) is connected to Ground (VSS) the x8 organization is
selected. When the M9 3Cx6 is in Standby mode, Organization Select (ORG) should be set
either to VSS or VCC for minimum power consumption. Any voltage between V SS and VCC
applied to Organ ization Select (ORG ) may increase the Standby current.
Instructions M93C86, M93C76, M93C66, M93C56, M93C46
12/38
5 Instructions
The instruction set of the M93Cx6 devices contains seven instructions, as summarized in
Table 5. to Table 7.. Each instruction consists of the following parts, as shown in Figure 4.:
●Each instruction is preceded b y a rising edge on Chip Select In put (S) with Se rial Clock
(C) being held low.
●A start bit, which is the first ‘1’ read on Serial Data Input (D) during the rising edge of
Serial Clock (C).
●Two op-code bits, read on Serial Data Input (D) during the rising edge of Serial Clock
(C). (Some instructions also use the first two bits of the address to de fine the op-code).
●The address bits of the byte or word that is to be accessed. For the M93C46, the
address is made up of 6 bits for the x16 organization or 7 bits f or the x8 organization
(see Table 5.). For the M93C56 and M93C66, the ad dress is made up of 8 bits for the
x16 organization or 9 bit s for the x8 organization (se e Table 6.). For the M93C76 and
M93C86, the address is made up of 10 bits f or the x16 org anization or 11 bits f o r the x8
organization (see Table 7.).
The M93Cx6 devices are fabricated in CMOS technology and are therefore able to run as
slow as 0 Hz (static input signals) or as fast as the maxim um ratings specified in Tab le 20. to
Table 23..
Table 5. Instruction set for t he M93C46
Instruction Description Start
bit Op-
code
x8 origination (ORG = 0) x16 origination (ORG = 1)
Address
(1) Data Required
clock
cycles
Address
(1) Data Required
clock
cycles
READ Read Data from
Memory 1 10 A6-A0 Q7-Q0 A5-A0 Q15-Q0
WRITE Write Data to
Memory 1 01 A6-A0 D7-D0 18 A5-A0 D15-D0 25
WEN Write Enab le 1 00 11X
XXXX 10 11 XXXX 9
WDS Write Disable 1 00 00X
XXXX 10 00 XXXX 9
ERASE Erase Byte or
Word 1 11 A6-A0 10 A5-A0 9
ERAL Erase All Memory 1 00 10X
XXXX 10 10 XXXX 9
WRAL Write All Memory
with same Data 100 01X
XXXX D7-D0 18 01 XXXX D15-D0 25
1. X = Don't Care bit.
M93C86, M93C76, M93C66, M93C56, M93C46 Instructions
13/38
Table 6. Instruction set for t he M93C56 and M93C66
Instruction Description Start
bit Op-
code
x8 origination (ORG = 0) x16 origination (ORG = 1)
Address
(1) (2) Data Required
clock c ycles Address
(1) (3) Data Required
clock c ycles
READ Read Data from
Memory 1 10 A8-A0 Q7-Q0 A7-A0 Q15-Q0
WRITE Write Data to
Memory 1 01 A8-A0 D7-D0 20 A7-A0 D15-D0 27
WEN Write Enable 1 00 1 1XXX
XXXX 12 11XX
XXXX 11
WDS Write Disable 1 00 0 0XXX
XXXX 12 00XX
XXXX 11
ERASE Erase Byte or
Word 1 11 A8-A0 12 A7-A0 11
ERAL Erase All
Memory 1001 0XXX
XXXX 12 10XX
XXXX 11
WRAL Write All Memory
with same Data 1000 1XXX
XXXX D7-D0 20 01XX
XXXX D15-D0 27
1. X = Don't Care bit.
2. Address bit A8 is not decoded by the M93C56.
3. Address bit A7 is not decoded by the M93C56.
Table 7. Instruction set for t he M93C76 and M93C86
Instruction Description Start
bit Op-
code
x8 Origination (ORG = 0) x16 Origination (ORG = 1)
Address(1),
(2) Data Required
clock
cycles
Address
(1) (3) Data Required
clock
cycles
READ Read Data from
Memory 1 10 A10-A0 Q7-Q0 A9-A0 Q15-Q0
WRITE Write Data to
Memory 1 01 A10-A0 D7-D0 22 A9-A0 D15-D0 29
WEN Write Enab le 1 00 11X XXXX
XXXX 14 11 XXXX
XXXX 13
WDS Write Disable 1 00 00X XXXX
XXXX 14 00 XXXX
XXXX 13
ERASE Erase Byte or Word 1 11 A10-A0 14 A9-A0 13
ERAL Erase All Memory 1 00 10X XXXX
XXXX 14 10 XXXX
XXXX 13
WRAL Write All Memory
with same Data 100
01X XXXX
XXXX D7-D0 22 01 XXXX
XXXX D15-D0 29
1. X = Don't Care bit.
2. Address bit A10 is not decoded by the M93C76.
3. Address bit A9 is not decoded by the M93C76.
Instructions M93C86, M93C76, M93C66, M93C56, M93C46
14/38
5.1 Read Data from Memory
The Read Data from Memory (READ) instruction outputs data on Serial Data Output (Q).
When the instruction is received, the op-code and address are decoded, and the data from
the memory is transferred to an output shift register. A dummy 0 bit is output first, followed
by the 8-bit byte or 16-bit word, with the most significant bit first. Output data changes are
triggered by the rising edge of Serial Clock (C). The M93Cx6 automatically increments the
internal address register and clocks out the next byte (or word) as long as the Chip Select
Input (S) is held High. In this case, the dummy 0 bit is not output between bytes (or words)
and a continuous stream of data can be read.
5.2 Write Enable and Write Disable
The Write Enable (WEN) instruction enables the future execution of erase or write
instructions, and the Write Disable (WDS) instruction disables it. When power is first
applied, the M93Cx6 initializes itself so that erase and write instructions are disabled. After
an Write Enable (WEN) instruction has been e x ecuted, er asing and writing remains enabl ed
until an Write Disable (WDS) instruction is executed, or until VCC falls below the power-on
reset threshold voltage. To protect the memory contents from accidental corruption, it is
advisable to issue the Write Disable (WDS) instruction after every write cycle. The Read
Data from Memory (READ) instruction is not affected by the Write Enable (WEN) or Write
Disable (WDS) instructions .
M93C86, M93C76, M93C66, M93C56, M93C46 Instructions
15/38
Figure 4. READ, WRITE, WEN, WDS sequences
1. For the meanings of An, Xn, Qn and Dn, see Table 5., Table 6. and Table 7..
5.3 Erase Byte or Word
The Erase Byte or W ord (ERASE) instruction sets the bits of the addressed memory byte (or
word) to 1. Once the address has been correctly decoded, the falling edge of the Chip
Select Input (S) starts the self-timed Erase cycle. The completion of the cycle can be
detected by monitoring the READY/BUSY line, as described in the READY/BUSY status
section.
AI00878d
1 1 0 An A0
Qn Q0
DATA OUT
D
S
Q
Read
SWrite
ADDR
OP
CODE
10An A0
DATA IN
D
Q
OP
CODE
Dn D01
BUSY READY
SWrite
Enable
10XnX0D
OP
CODE
101
SWrite
Disable
10XnX0D
OP
CODE
0 00
CHECK
STATUS
ADDR
Instructions M93C86, M93C76, M93C66, M93C56, M93C46
16/38
5.4 Write
F o r t he Write Data to Memory (WRITE) instruction, 8 or 16 data bits follow the op-code and
address bits. These form the byte or word that is to be written. As with the other bits, Serial
Data Input (D) is sampled on the rising edge of Serial Clock (C).
After the last data bit has been sampled, the Chip Select Input (S) must be tak en low bef ore
the next rising edge of Serial Clock (C). If Chip Select Input (S) is br ought lo w bef ore o r after
this specific time frame, the self-timed programming cycle will not be started, and the
addressed location will not be progra mmed. The completion of the cycle can be detected by
monitoring the READY/BUSY line, as described later in this document.
Once the Write cycle has been started, it is inte rnally self-tim ed (the e xternal clock signal on
Serial Cloc k (C) may be stopped or left running after the start of a Write cycle). The cycle is
automatically pr eceded by an Erase cycle, so it is unnecessary to execute an explicit erase
instruction before a Write Data to Memory (WRITE) instruction.
Figure 5. ERASE, ERAL sequences
1. For the meanings of An and Xn, please see Table 5., Table 6. and Table 7..
5.5 Erase All
The Erase All Memory (ERAL) instruction erases the whole memory (all memory bits are set
to 1). The for mat of the instruction requires that a dummy address be provided. The Erase
cycle is conducted in the same way as the Erase instruction (ERASE). The completion of
the cycle can be detected by monitoring the READY/BUSY line, as described in the
READY/BUSY status section.
AI00879B
SERASE
1 1D
Q
ADDR
OP
CODE
1
BUSY READY
CHECK
STATUS
SERASE
ALL
1 0D
Q
OP
CODE
1
BUSY READY
CHECK
STATUS
0 0
An A0
Xn X0
ADDR
M93C86, M93C76, M93C66, M93C56, M93C46 Instructions
17/38
5.6 Write All
As with the Erase All Memory (ERAL) instruction, the format of the Write All Memory with
same Data (WRAL) instruction requires that a dummy address be provid ed. As with the
Write Data to Memory (WRITE) instruction, the format of the Write All Memory with same
Data (WRAL) instruction requires that an 8-bit data byte, or 16-bit data word, be provided.
This v alue is written to a ll the ad dr esse s of th e me mory de vice. The completion of the cycle
can be detected b y monitoring the READY/BUSY line, as described next.
Figure 6. WRAL sequence
1. For the meanings of Xn and Dn, please see Table 5., Table 6. and Table 7..
AI00880C
SWRITE
ALL
DATA IN
D
Q
ADDR
OP
CODE
Dn D0
BUSY READY
CHECK
STATUS
1000 1 Xn X0
READY/BUSY status M93C86, M93C76, M93C66, M93C56, M93C46
18/38
6 READY/BUSY status
While the Write or Erase cycle is underway, for a WRITE, ERASE, WRAL or ERAL
instruction, the Busy signal (Q=0) is returned whenev er Chip Select input (S) is driven high.
(Please note, though, that there is an initial delay, of tSLSH, before this status information
becomes available). In this state, the M93Cx6 ignores any data on the bus. When the Write
cycle is completed, and Chip Sele ct Input (S) is driven high, the Ready signal (Q=1)
indicates that the M9 3Cx6 is ready to receive the next ins truction. Ser ial Dat a Ou tp ut (Q)
remains set to 1 until the Chip Select Input (S) is broug ht low or until a new start bit is
decoded.
7 Initial delivery state
The device is delivered with all bits in the memory array set to 1 (each byte contains FFh).
8 Common I/O operation
Serial Data Output (Q) and Serial Data Input (D) can be connected together, through a
current limiting resistor , to form a common, single-wire data b us. Some precautions must be
taken when operating the memory in this way, mostly to preven t a short circuit current from
flowing when the last address bit (A0) clashes with the first data bit on Serial Data Output
(Q). Please see the application note AN394 for details.
M93C86, M93C76, M93C66, M93C56, M93C46 Clock pulse counter
19/38
9 Clock pulse counter
In a noisy environment, the number of pulses received on Serial Clock (C) may be greater
than the number delivered by the master (the microcontroller). This can lead to a
misalignment of the instruction of one or more bits (as shown in Figure 7.) and may lead to
the writing of erroneous data at an err oneous address.
To combat this problem, the M93Cx6 has an on-chip counter that counts the clock pulses
from the start bit until the falling edge of the Chip Select Input (S). If the number of clock
pulses received is not the number expected, the WRITE, ERASE, ERAL or WRAL
instruction is aborted, and the contents of the memory are not modified.
The number of clock cycles expected for each instruction, and for each member of the
M93Cx6 family, are summarized in Table 5. to Table 7.. For example, a Write Data to
Memory (WRITE) instruction on the M93C56 (or M93C66) expects 20 clock cycles (for the
x8 organization) from the start bit to the falling edge of Chip Select Input (S). That is:
1 Start bit
+ 2 Op-code bits
+ 9 Address bits
+ 8 Data bits
Figure 7. Write sequence with one clock glitch
AI01395
S
An-1
C
D
WRITE
START D0"1""0"
An
Glitch
An-2
ADDRESS AND DATA
ARE SHIFTED BY ONE BIT
Maximum rating M93C86, M93C76, M93C66, M93C56, M93C46
20/38
10 Maximum rating
Stressing the device above the rating listed in the absolute maximum ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exp osur e to abso lute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 8. Absolute maximum ratings
Symbol Parameter Min. Max. Unit
TAAmbient operating temperature – 40 130 °C
TSTG Storage temperature –65 150 °C
TLEAD PDIP-specific lead temperature during soldering 260(1)
1. TLEADmax must not be applied for more than 10 s.
°C
VOUT Output range (Q = VOH or Hi-Z) –0.50 VCC+0.5 V
VIN Input range –0.50 VCC+1 V
VCC Supply voltage –0.50 6.5 V
VESD Electrostatic discharge voltage (human body
model)(2)
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 Ω, R2=500 Ω).
–4000 4000 V
M93C86, M93C76, M93C66, M93C56, M93C46 DC and AC parameters
21/38
11 DC and AC parameters
This section summarizes the operating and measurement conditions, and the dc and ac
characteristics of the device. The parameters in the dc and ac characteristic tables that
follow are derived from tests performed under the measurement conditions summarized in
the relevant tables. Designers should check that the operating conditions in their circuit
match the measurem ent conditions when relying on the quoted parameters.
Table 9. Operating conditions (M93Cx6)
Symbol Parameter Min. Max. Unit
VCC Supply voltage 4.5 5.5 V
TAAmbient operating temperature (device grade 6) –40 85 °C
Ambient operating temperatu re (device grade 3) –40 125 °C
Table 10. Operating conditions (M9 3Cx6-W)
Symbol Parameter Min. Max. Unit
VCC Supply voltage 2.5 5.5 V
TAAmbient operating temperature (device grade 6) –40 85 °C
Ambient operating temperatu re (device grade 3) –40 125 °C
Table 11. Operating conditions (M93Cx6-R)
Symbol Parameter Min. Max. Unit
VCC Supply voltage 1.8 5.5 V
TAAmbient operating temperature (device grade 6) –40 85 °C
Table 12 . AC measurement conditions (M93Cx6)(1)
1. Output Hi-Z is defined as the point where data out is no longer driven.
Symbol Parameter Min. Max. Unit
CLLoad capacitance 100 pF
Input rise and fall times 50 ns
Input pulse voltages 0.4 V to 2.4 V V
Input timing reference volta ges 1.0 V and 2.0 V V
Output timing reference voltages 0.8 V and 2.0 V V
DC and AC parameters M93C86, M93C76, M93C66, M93C56, M93C46
22/38
Figure 8. AC testing input output waveforms
Table 13. AC measurement conditions (M93Cx6-W and M93Cx6-R)(1)
1. Output Hi-Z is defined as the point where data out is no longer driven.
Symbol Parameter Min. Max. Unit
CLLoad capacitance 100 pF
Input rise and fall times 50 ns
Input pulse voltages 0.2VCC to 0.8VCC V
Input timing reference voltages 0.3VCC to 0.7VCC V
Output timing reference voltages 0.3VCC to 0.7VCC V
Table 14. Capacitance(1)
1. Sampled only, not 100% tested, at TA = 25 °C and a frequency of 1 MHz.
Symbol Pa rameter Test condition Min Max Unit
COUT Output capacitance VOUT = 0V 5 pF
CIN Input capacitance VIN = 0V 5 pF
Table 15. DC characteristics (M93Cx6, device grade 6)
Symbol Parameter Test condition Min. Max. Unit
ILI Input leakage current 0V ≤ VIN ≤ VCC ±2.5 µA
ILO Output leakage current 0V ≤ VOUT ≤ VCC, Q in Hi-Z ±2.5 µA
ICC Supply current VCC = 5 V, S = VIH, f = 2 MHz,
Q = open 2 mA
ICC1 Supply current (Standby) VCC = 5 V, S = VSS, C = VSS,
ORG = VSS or VCC,
pin7 = VCC, VSS or Hi-Z 15 µA
VIL(1)
1. The input and output levels are compatible with TTL logic levels.
Input low voltage VCC = 5 V ± 10% –0.45 0.8 V
VIH(1) Input high voltage VCC = 5 V ± 10% 2 VCC + 1 V
VOL(1) Output low voltage VCC = 5 V, IOL = 2.1 mA 0.4 V
VOH(1) Output high voltage VCC = 5 V, IOH = –400 µA 2.4 V
AI02553
2.4V
0.4V
2.0V
0.8V
2V
1V
INPUT OUTPUT
0.8VCC
0.2VCC
0.7VCC
0.3VCC
M93CXX-W & M93CXX-R
M93CXX
M93C86, M93C76, M93C66, M93C56, M93C46 DC and AC parameters
23/38
Table 16. DC characteristics (M93Cx6, device grade 3)
Symbol Parameter Test condition Min. Max. Unit
ILI Input leakage current 0V ≤ VIN ≤ VCC ±2.5 µA
ILO Output leakage current 0V ≤ VOUT ≤ VCC, Q in Hi-Z ±2.5 µA
ICC Supply current VCC = 5 V, S = VIH, f = 2 MHz,
Q = open 2 mA
ICC1 Supply current (Standby) VCC = 5 V, S = VSS, C = VSS,
ORG = VSS or VCC,
pin7 = VCC, VSS or Hi-Z 15 µA
VIL Input low voltage VCC = 5 V ± 10% –0.45 0.8 V
VIH Input high voltage VCC = 5 V ± 10% 2 VCC + 1 V
VOL Output low voltage VCC = 5 V, IOL = 2.1 mA 0.4 V
VOH Output high voltage VCC = 5 V, IOH = –400 µA 2.4 V
Table 17. DC characteristics (M93Cx6-W, device grade 6)
Symbol Parameter Test condition Min. Max. Unit
ILI Input leakage current 0V ≤ VIN ≤ VCC ±2.5 µA
ILO Output leakage current 0V ≤ VOUT ≤ VCC, Q in Hi-Z ±2.5 µA
ICC Supply current (CMOS
inputs)
VCC = 5 V, S = VIH, f = 2 MHz,
Q = open 2 mA
VCC = 2.5 V, S = VIH, f = 2 MHz,
Q = open 1 mA
ICC1 Supply current (Standby) VCC = 2.5 V, S = VSS, C = VSS,
ORG = VSS or VCC,
pin7 = VCC, VSS or Hi-Z 5 µA
VIL Input low voltage (D, C, S) –0.45 0.2 VCC V
VIH Input high voltage (D, C, S) 0.7 VCC VCC + 1 V
VOL Output low voltage (Q) VCC = 5 V, IOL = 2.1 mA 0.4 V
VCC = 2.5 V, IOL = 100 µA 0.2 V
VOH Output high voltage (Q) VCC = 5 V, IOH = –400 µA 2.4 V
VCC = 2.5 V, IOH = –100 µA VCC–0.2 V
DC and AC parameters M93C86, M93C76, M93C66, M93C56, M93C46
24/38
Table 18. DC characteristics (M93Cx6-W, device grade 3)
Symbol Parameter Test condition Min.(1)
1. New product: identified by Process Identification letter W or G or S.
Max. (1) Unit
ILI Input leakage current 0V ≤ VIN ≤ VCC ±2.5 µA
ILO Output leakage current 0V ≤ VOUT ≤ VCC, Q in Hi-Z ±2.5 µA
ICC Supply current (CMOS
inputs)
VCC = 5 V, S = VIH, f = 2 MHz,
Q = open 2 mA
VCC = 2.5 V, S = VIH, f = 2 MHz,
Q = open 1 mA
ICC1 Supply current (Standby) VCC = 2.5 V, S = VSS, C = VSS,
ORG = VSS or VCC,
pin7 = VCC, VSS or Hi-Z 5 µA
VIL Input low voltage (D, C,
S) –0.45 0.2 VCC V
VIH Input high voltage (D, C,
S) 0.7 VCC VCC + 1 V
VOL Output low voltage (Q) VCC = 5 V, IOL = 2.1 mA 0.4 V
VCC = 2.5 V, IOL = 100 µA 0.2 V
VOH Output high voltage (Q) VCC = 5 V, IOH = –400 µA 2.4 V
VCC = 2.5 V, IOH = –10 0µA VCC–0.2 V
Table 19. DC characteri stics (M93Cx6-R)
Symbol Parameter Test condition Min.(1)
1. This product is under development. For more information, please contact your nearest ST sales office.
Max. (1) Unit
ILI Input leakage current 0V ≤ VIN ≤ VCC ±2.5 µA
ILO Output leakage current 0V ≤ VOUT ≤ VCC, Q in Hi-Z ±2.5 µA
ICC Supply current (CMOS
inputs)
VCC = 5 V, S = VIH, f = 2 MHz,
Q = open 2 mA
VCC = 1.8 V, S = VIH, f = 1 MHz,
Q = open 1 mA
ICC1 Supply current (Standby) VCC = 1.8 V, S = V SS, C = VSS,
ORG = VSS or VCC,
pin7 = VCC, VSS or H i-Z 2 µA
VIL Input low voltage (D, C,
S) –0.45 0.2 VCC V
VIH Input high voltage (D, C,
S) 0.8 VCC VCC + 1 V
VOL Output low voltage (Q) VCC = 1.8 V, IOL = 100 µA 0.2 V
VOH Output high voltage (Q) VCC = 1.8 V, IOH = –100 µA VCC–0.2 V
M93C86, M93C76, M93C66, M93C56, M93C46 DC and AC parameters
25/38
Table 20. AC characteristics (M93Cx6, device grade 6 or 3)
Test conditions specified in Table 12. and Table 9.
Symbol Alt. Parameter Min. Max. Unit
fCfSK Clock frequency D.C. 2 MHz
tSLCH Chip Select low to Clock high 50 ns
tSHCH tCSS
Chip Select setup time
M93C46, M93C56, M93C66 50 ns
Chip Select setup time
M93C76, M93C86 50 ns
tSLSH(1)
1. Chip Select Input (S) must be brought low for a minimum of tSLSH between consecutive instruction cycles.
tCS Chip Select low to Chip Select high 200 ns
tCHCL(2)
2. tCHCL + tCLCH ≥ 1 / fC.
tSKH Clock high time 200 ns
tCLCH(2) tSKL Clock low time 200 ns
tDVCH tDIS Data i n setup time 50 ns
tCHDX tDIH Data in hold time 50 ns
tCLSH tSKS Clock setup time (relative to S) 50 ns
tCLSL tCSH Chip Select hold time 0 ns
tSHQV tSV Chip Select to READY/BUSY status 200 ns
tSLQZ tDF Chip Select low to output Hi-Z 100 ns
tCHQL tPD0 Delay to output low 200 ns
tCHQV tPD1 Delay to output va lid 200 ns
tWtWP Erase or Write cycle time 5 ms
Table 21. AC characteristics (M93Cx6-W, device grade 6)
Test conditions specified in Table 13. and Table 10.
Symbol Alt. Parameter Min. Max. Unit
fCfSK Clock frequency D.C. 2 MHz
tSLCH Chip Select low to Clock high 50 ns
tSHCH tCSS Chip Select setup time 50 ns
tSLSH(1) tCS Chip Select low to Chip Select high 200 ns
tCHCL(2) tSKH Clock high time 200 ns
tCLCH(2) tSKL Clock low time 200 ns
tDVCH tDIS Data in setup time 50 ns
tCHDX tDIH Data in hold time 50 ns
tCLSH tSKS Clock setup time (relative to S) 50 ns
tCLSL tCSH Chip Select hold time 0 ns
tSHQV tSV Chip Select to READY/BUSY status 200 ns
DC and AC parameters M93C86, M93C76, M93C66, M93C56, M93C46
26/38
tSLQZ tDF Chip Select low to output Hi-Z 100 ns
tCHQL tPD0 Delay to output low 200 ns
tCHQV tPD1 Delay to output valid 200 ns
tWtWP Erase or Write cycle time 5 ms
1. Chip Select Input (S) must be brought low for a minimum of tSLSH between consecutive instruction cycles.
2. tCHCL + tCLCH ≥ 1 / fC.
Table 22. AC characteristics (M93Cx6-W, device grade 3)
Test conditions specified in Table 13. and Table 10.
Symbol Alt. Parameter Min. Max. Unit
fCfSK Clock frequency D.C. 2 MHz
tSLCH Chip Select low to Clock high 50 ns
tSHCH tCSS Chip Select set-up time 50 ns
tSLSH(1)
1. Chip Select Input (S) must be brought low for a minimum of tSLSH between consecutive instruction cycles.
tCS Chip Select low to Chip Select high 200 ns
tCHCL(2)
2. tCHCL + tCLCH ≥ 1 / fC.
tSKH Clock high time 200 ns
tCLCH(2) tSKL Clock low time 200 ns
tDVCH tDIS Data in set-up time 50 ns
tCHDX tDIH Data in hold time 50 ns
tCLSH tSKS Clock set-up time (relative to S) 50 ns
tCLSL tCSH Chip Select hold time 0 ns
tSHQV tSV Chip Select to READY/BUSY status 200 ns
tSLQZ tDF Chip Select low to output Hi-Z 100 ns
tCHQL tPD0 Delay to output low 200 ns
tCHQV tPD1 Delay to output valid 200 ns
tWtWP Erase or Write cycle time 5 ms
Table 21. AC characteristics (M93Cx6-W, device grade 6)
Test conditions specified in Table 13. and Table 10.
Symbol Alt. Parameter Min. Max. Unit
M93C86, M93C76, M93C66, M93C56, M93C46 DC and AC parameters
27/38
Figure 9. Synchronous timing (start and op-code input)
Table 23. AC characteristics (M93Cx6-R)
Test cond iti ons sp ecified in Table 13. and Table 11.
Symbol Alt. Parameter Min.(1)
1. This product is under development. For more information, please contact your nearest ST sales office.
Max.(1) Unit
fCfSK Clock frequency D.C. 1 MHz
tSLCH Chip Select low to Clock high 250 ns
tSHCH tCSS Chip Select setup time 50 ns
tSLSH(2)
2. Chip Select Input (S) must be brought low for a minimum of tSLSH between consecutive instruction cycles.
tCS Chip Select low to Chip Select high 250 ns
tCHCL(3)
3. tCHCL + tCLCH ≥ 1 / fC.
tSKH Clock high time 250 ns
tCLCH(3) tSKL Clock low time 250 ns
tDVCH tDIS Data in setup time 100 ns
tCHDX tDIH Data in hold time 100 ns
tCLSH tSKS Clock setup time (relative to S) 100 ns
tCLSL tCSH Chip Select hold time 0 ns
tSHQV tSV Chip Select to READY/BUSY status 400 ns
tSLQZ tDF Chip Select low to output Hi-Z 200 ns
tCHQL tPD0 Delay to output low 400 ns
tCHQV tPD1 Delay to output valid 400 ns
tWtWP Erase or Write cycle time 10 ms
AI01428
C
OP CODE OP CODE
START
S
D
OP CODE INPUTSTART
tDVCH
tSHCH
tCLSH tCHCL
tCLCH
tCHDX
DC and AC parameters M93C86, M93C76, M93C66, M93C56, M93C46
28/38
Figure 10. Synchronous timing (Read or Write)
Figure 11. Synchronous timing (Read or Write)
AI00820C
C
D
Q
ADDRESS INPUT
Hi-Z
tDVCH
tCLSL
A0
S
DATA OUTPUT
tCHQVtCHDX
tCHQL
An
tSLSH
tSLQZ
Q15/Q7 Q0
AI01429
C
D
Q
ADDRESS/DATA INPUT
Hi-Z
tDVCH
tSLCH
A0/D0
S
WRITE CYCLE
tSLSHtCHDX
An
tCLSL
tSLQZ
BUSY
tSHQV
tW
READY
M93C86, M93C76, M93C66, M93C56, M93C46 Package mechanical
29/38
12 Package mechanical
Figure 12. PDIP8 – 8 lead plastic dual in-line package, 300 mils body width, package
outline
1. Drawing is not to scale.
Table 24. PDIP8 – 8 lead plastic dual in-line package, 300 mils body width, package
mechanical data
Symbol millimeters inches
Typ. Min. Max. Typ. Min. Max.
A 5.33 0.210
A1 0.38 0.015
A2 3.30 2.92 4.95 0.130 0.115 0.195
b 0.46 0.36 0.56 0.018 0.014 0.022
b2 1.52 1.14 1.78 0.060 0.045 0.070
c 0.25 0.20 0.36 0.010 0.008 0.014
D 9.27 9.02 10.16 0.365 0.355 0.400
E 7.87 7.62 8.26 0.310 0.300 0.325
E1 6.35 6.10 7.11 0.250 0.240 0.280
e 2.54 – – 0.100 – –
eA 7.62 – – 0.300 – –
eB 10.92 0.430
L 3.30 2.92 3.81 0.130 0.115 0.150
PDIP-B
A2
A1
A
L
be
D
E1
8
1
c
eA
b2
eB
E
Package mecha n ic al M93C86, M9 3C76, M93C66, M93C5 6, M 93 C 4 6
30/38
Figure 13. SO8 narrow – 8 lead plastic small outline, 150 mils body width, package
outline
1. Drawing is not to scale.
Table 25. SO8 narrow – 8 lead plastic small outline, 150 mil s body width, pac kage
data
Symbol millimeters inches
Typ Min Max Typ Min Max
A1.750.069
A1 0.10 0.25 0.004 0.010
A2 1.25 0.049
b 0.28 0.48 0.011 0.019
c 0.17 0.23 0.007 0.009
ccc 0.10 0.004
D 4.90 4.80 5.00 0.193 0.189 0.197
E 6.00 5.80 6.20 0.236 0.228 0.244
E1 3.90 3.80 4.00 0.154 0.150 0.157
e1.27––0.050––
h 0.25 0.50 0.010 0.020
k 0°8° 0°8°
L 0.40 1.27 0.016 0.050
L1 1.04 0.041
SO-A
E1
8
ccc
be
A
D
c
1E
h x 45˚
A2
k
0.25 mm
L
L1
A1
GAUGE PLANE
M93C86, M93C76, M93C66, M93C56, M93C46 Package mechanical
31/38
Figure 14. UFDFPN8 (MLP8) 8-lead ultra thin fine pitch dual flat package no lead
2 x 3 mm, outline
1. Drawing is not to scale.
2. The central pad (the area E2 by D2 in the above illustration) is pulled, internally, to VSS. It must not be
allowed to be connected to any other voltage or signal line on the PCB, for example during the soldering
process.
Table 26. UFDFPN8 (MLP8) 8-lead ultra thin fine pitch dual flat package no lead
2x3 mm, data
Symbol millimeters inches
Typ Min Max Typ Min Max
A 0.55 0.50 0.60 0.022 0.020 0.024
A1 0.02 0.00 0.05 0.001 0.000 0.002
b 0.25 0.20 0.30 0.010 0.008 0.012
D 2.00 1.90 2.10 0.079 0.075 0.083
D2 1.60 1.50 1.70 0.063 0.059 0.067
ddd 0.08 0.003
E 3.00 2.90 3.10 0.118 0.114 0.122
E2 0.20 0.10 0.30 0.008 0.004 0.012
e0.50– –0.020– –
L 0.45 0.40 0.50 0.018 0.016 0.020
L1 0.15 0.006
L3 0.30 0.012
D
E
UFDFPN-01
A
A1 ddd
L1
eb
D2
L
E2
L3
Package mecha n ic al M93C86, M9 3C76, M93C66, M93C5 6, M 93 C 4 6
32/38
Figure 15. TSSOP8 – 8 lead thin shri nk small outline, package outline
1. Drawing is not to scale.
Table 27. TSSOP8 – 8 lead thin shrink small out line, package mechanical data
Symbol millimeters inches
Typ. Min. Max. Typ. Min. Max.
A 1.200 0.0472
A1 0.050 0.150 0.0020 0.0059
A2 1.000 0.800 1.050 0.0394 0.0315 0.0413
b 0.190 0.300 0.0075 0.0118
c 0.090 0.200 0.0035 0.0079
CP 0.100 0.0039
D 3.000 2.900 3.100 0.1181 0.1142 0.1220
e 0.650 – – 0.0256 – –
E 6.400 6.200 6.600 0.2520 0.2441 0.2598
E1 4.400 4.300 4.500 0.1732 0.1693 0.1772
L 0.600 0.450 0.750 0.0236 0.0177 0.0295
L1 1.000 0.0394
α0° 8° 0° 8°
N (pin number) 8 8
TSSOP8AM
1
8
CP
c
L
EE1
D
A2A
α
eb
4
5
A1
L1
M93C86, M93C76, M93C66, M93C56, M93C46 Part numbering
33/38
13 Part numbering
F o r a list of available options (speed, pac kag e, etc.) or fo r further information on an y aspect
of this device, please contact your nearest ST sales office.
The category of second-level interconnect is marked on the package and on the inne r box
label, in compliance with JEDEC Standar d JESD97. The maximum ratings related to
soldering conditions are also marked on the inner box label.
Table 28. Ordering information scheme
Example: M93C86 – W MN 6 T P /S
Device type
M93 = MICROWIRE serial access EEPROM
Device function
86 = 16 Kbit (2048 x 8)
76 = 8 Kbit (1024 x 8)
66 = 4 Kbit (512 x 8)
56 = 2 Kbit (256 x 8)
46 = 1 Kbit (128 x 8)
Operatin g voltage
blank = V CC = 4.5 to 5.5 V
W = VCC = 2.5 to 5.5 V
R = VCC = 1.8 to 5.5 V
Package
BN = PDIP8
MN = SO8 (150 mils width)
MB = UFDFPN8 (MLP8)
DW = TSSOP8 (169 mils width)
DS = TSSOP8 (3 x 3 mm body size)
Device grade
6 = Industrial temperature range, –40 to 85 °C.
Device tested with standard test flow
3 = Device tested with High Reliability Certified Flow(1).
A u tomotive temperature range (–40 to 125 °C)
1. ST strongly recommends the use of the Automotive Grade devices for use in an automotive
environment. The High Reliability Certified Flow (HRCF) is described in the quality note QNEE9801.
Please ask your nearest ST sales office for a copy.
Packing
blank = standard packing
T = tape and reel packing
Plating technology
P or G = ECOPACK® (RoHS compliant)
Process(2)
2. Used only for Device Grade 3.
/W or /S = F6SP36%
Part numbering M93C86, M93C76, M93C66, M93C56, M93C46
34/38
Table 29. Availa ble M93C46-x products (package, voltage range, temperature
grade)
Package M93C46
4.5 V to 5.5 V M93C46-W
2.5 V to 5.5 V M93C46-R
1.8 V to 5.5 V
DIP8 (BN) Range3 Range 6
Range3 -
SO8 (MN) Range 6
Range3 Range 6
Range3 -
TSSOP (DW) - Range 6
Range3 -
Table 30. Availa ble M93C56-x products (package, voltage range, temperature
grade)
Package M93C56
4.5 V to 5.5 V M93C56-W
2.5 V to 5.5 V M93C56-R
1.8 V to 5.5 V
SO8 (MN) Range 6
Range3 Range 6
Range3 Range 6
TSSOP (DW) Range 6
Table 31. Availa ble M93C66-x products (package, voltage range, temperature
grade)
Package M93C66
4.5 V to 5.5 V M93C66-W
2.5 V to 5.5 V M93C66-R
1.8 V to 5.5 V
SO8 (MN) Ran ge 6
Range3 Range 6
Range3
TSSOP (DW) Range 6
Range3
UFDFPN 2 x 3 mm (MB) Range 6
Table 32. Availa ble M93C76-x products (package, voltage range, temperature
grade)
Package M93C76
4.5 V to 5.5 V M93C76-W
2.5 V to 5.5 V
SO8 (MN) Range3 Range 6
Range3
TSSOP (DW) Range 6
M93C86, M93C76, M93C66, M93C56, M93C46 Part numbering
35/38
Table 33. Availa ble M93C86-x products (package, voltage range, temperature
grade)
Package M93C86
4.5 V to 5.5 V M93C86-W
2.5 V to 5.5 V M93C86-R
1.8 V to 5.5 V
DIP8 (BN) Range 6
SO8 (MN) Range 6
Range3 Range 6
Range3
TSSOP (DW) Range 6
Revision history M93C86, M93C76, M93C66, M93C56, M93C46
36/38
14 Revision history
Table 34. Document revision history
Date Revision Changes
04-Feb-2003 2.0
Document reformatted, and reworded, using the new template.
Temperature range 1 remov ed. TSSOP8 (3x3mm) package added. Ne w
products, identified by the process letter W, added, with fc(max)
increased to 1MHz for -R voltage range, and to 2MHz for all other
ranges (and corresponding parameters adjusted)
26-Mar-2003 2.1
Value of standb y current (max) corrected in DC characteristics tabl es for
-W and -R ranges
VOUT and VIN separ ated from VIO in the Absolute Maximum Ratings
table
04-Apr-2003 2.2 V alues corrected in A C characteristics tables f or -W range (tSLSH, tDVCH,
tCLSL) for devices with Process Identification Letter W
23-May-2003 2.3 Standby current corrected for -R range
27-May-2003 2.4 Turned-die option re-instated in Ordering Information Scheme
25-Nov-2003 3.0 Table of contents, and Pb-free options added. Temperature range 7
added. VIL(min) improved to –0.45V.
30-Mar-2004 4.0
MLP package added. Absolute Maximum Ratings for VIO(min) and
VCC(min) changed. Solder ing temperature information clarified for
RoHS compliant devices. Device grade information clarified. Process
identification letter “G” information added
16-Aug-2004 5.0 M93C06 removed. Device grade infor mation further clarified. Process
identification letter “S” information added. Turned-die package option
remov ed. Product list summary added.
27-Oct-2005 6.0
current product/new product distinction removed. ICC and ICC1 v alues for
current product removed from tables 15, 16 and 17 and AC
characteristi c s for current product removed from Tables 20 and 21.
Clock rate added to Features.
“Q = open” added to ICC Test conditions in DC Characteristics Tables 15,
16, 17, 18 and 19.
Process added to Table 28.: Ordering information scheme. PO WER ON
DATA PROTECTION section removed, repla ce d by Operating features
and Active Power and Standby Power modes. Initial deliv ery state
added.
SO8N and TSSOP8 packages updated. PDIP-specific TLEAD added to
Table 8.: Absolute maximum ratings.
M93C86, M93C76, M93C66, M93C56, M93C4 6 Revision history
37/38
31-Jul-2007 7
Document reformatted. TSSOP8 3 × 3 mm (DS) package removed.
Erase/Write Enable (EWEN) instruction repla ce d by Write Enable
(WEN). Erase/Write Disable (EWDS) instruction replaced by Write
Disable (WDS).
Section 7: Initial delivery sta te modified, ACTIVE POWER AND
STANDBY POWER MODES section removed.
ICC1 test conditions modified in Table 15, Table 16, Table 17, Table 18
and Table 19. Note 1 ad ded to Table 15.
tW parameter description modified in Table 20, Table 21, Table 22 and
Table 23..
SO8 narrow and UFDFPN8 package specifications updated (see
Section 12: Package mechanical).
Table 29, Table 30, Table 31, Table 32 and Table 33 added.
Blank option removed under Plating technology in Table 27: TSSOP8 –
8 lead thin shr ink small outline, package mechanical data.
Section 2: Connecting to the serial bus added. Device g rade 7 removed.
Table 34. Document revision history (continued)
Date Revision Changes
M93C86, M93C76, M93C66, M93C56, M93C46
38/38
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