AP4438GYT-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Small Size & Lower Profile RoHS Compliant & Halogen-Free D BVDSS RDS(ON) ID 30V 12m 13.7A G S D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The PMPAK(R) 3 x 3 package is special for DC-DC converters application and lower 1.0mm profile with backside heat sink. D S S S G PMPAK (R) 3 x 3 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units 30 V +20 V 3 13.7 A 3 11 A 50 A 3.57 W Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current PD@TA=25 Total Power Dissipation TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Value Unit Rthj-c Symbol Maximum Thermal Resistance, Junction-case 4.5 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 3 35 /W Parameter Data and specifications subject to change without notice 1 201108082 AP4438GYT-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=250uA 30 - - V VGS=10V, ID=11A - 9 12 m VGS=4.5V, ID=5A - 15 18 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 1.5 3 V gfs Forward Transconductance VDS=10V, ID=11A - 20 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=11A - 10 16 nC Qgs Gate-Source Charge VDS=15V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4.5 - nC td(on) Turn-on Delay Time VDS=15V - 9 - ns tr Rise Time ID=1A - 5 - ns td(off) Turn-off Delay Time RG=3.3 - 21 - ns tf Fall Time VGS=10V - 4.5 - ns Ciss Input Capacitance VGS=0V - 1100 1760 pF Coss Output Capacitance VDS=15V - 125 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 100 - pF Rg Gate Resistance f=1.0MHz - 1.3 2.6 Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=2.9A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=11A, VGS=0V, - 17 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 8 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 85oC/W at steady state. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP4438GYT-HF 60 60 T A =25 o C 10V 7.0V 6.0V 5.0V V G = 4.0V 40 10V 7.0V 6.0V 5.0V V G = 4.0V 50 ID , Drain Current (A) ID , Drain Current (A) 50 T A = 150 o C 30 20 40 30 20 10 10 0 0 0 1 2 3 4 0 5 V DS , Drain-to-Source Voltage (V) 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 18 2.0 I D =11A V G =10V ID=5A T A =25 16 Normalized RDS(ON) RDS(ON) (m) 1.6 14 12 1.2 0.8 10 8 0.4 2 4 6 8 10 -50 V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 12 1.6 I D =250uA Normalized VGS(th) (V) 10 IS(A) 8 T j =150 o C T j =25 o C 6 4 1.2 0.8 0.4 2 0.0 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP4438GYT-HF f=1.0MHz 1600 10 8 1200 C iss C (pF) VGS , Gate to Source Voltage (V) ID=7A V DS =15V 6 800 4 400 2 C oss C rss 0 0 0 4 8 12 16 20 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Duty factor=0.5 ID (A) 10 Normalized Thermal Response (Rthja) Operation in this area limited by RDS(ON) 100us 1ms 10ms 1 100ms 1s 0.1 T A =25 o C Single Pulse DC 0.2 0.1 0.1 0.05 0.02 0.01 PDM Single Pulse t 0.01 T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthia=85 /W 0.001 0.01 0.01 0.1 1 10 0.0001 100 0.001 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 1000 16 50 V DS =5V T j =25 o C T j =150 o C ID , Drain Current (A) ID , Drain Current (A) 40 30 20 12 8 4 10 0 0 0 1 2 3 4 5 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics 6 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) Fig 12. Maximum Continuous Drain Current v.s. Ambient Temperature 4