US2882
Bipolar Hall Switch Very High Sensitivity
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Features and Benefits
Wide operating voltage range from 3.5V to 24V
Very high magnetic sensitivity
CMOS technology
Chopper-stabilized amplifier stage
Low current consumption
Open drain output
AEC-Q100 Qualified
Thin SOT23 3L and flat TO-92 3L
both RoHS Compliant packages
Applications
Automotive, Consumer and Industrial
Solid-state switch
Brushless DC motor commutation
Speed detection
Linear position detection
Angular position detection
Proximity detection
Ordering information
Part No.
Temperature Code
Package Code
Option Code
Packing Form Code
US2882
E
SE
AAA-000
RE
US2882
K
SE
AAA-000
RE
US2882
L
SE
AAA-000
RE
US2882
E
UA
AAA-000
BU
US2882
K
UA
AAA-000
BU
US2882
L
UA
AAA-000
BU
Legend:
Temperature Code: L for Temperature Range -40°C to 150°C
E for Temperature Range -40°C to 85°C
K for Temperature Range -40°C to 125°C
Package Code: SE for TSOT, UA for TO-92 (Flat)
Option Code: xxx-000: Standard version
Packing Form: RE for Reel, BU for Bulk
Ordering example: US2882ESE-AAA-000-RE
Functional Diagram 1.
General Description 2.
The Melexis US2882 is a bipolar Hall-effect switch designed
in mixed signal CMOS technology.
The device integrates a voltage regulator, Hall sensor with
dynamic offset cancellation system, Schmitt trigger and an
open-drain output driver, all in a single package.
Thanks to its wide operating voltage range and extended
choice of temperature range, it is suitable for use in
automotive and consumer applications.
The device is delivered in a Thin Small Outline Transistor
(TSOT) for surface mount process and in a Plastic Single In
Line (TO-92 flat) for through- hole mount.
Both 3-lead packages are RoHS compliant.
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Bipolar Hall Switch Very High Sensitivity
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Contents
1. Functional Diagram .............................................................................................................................................. 1
2. General Description.............................................................................................................................................. 1
3. Glossary of Terms ................................................................................................................................................. 3
4. Absolute Maximum Ratings .................................................................................................................................. 3
5. Pin Definitions and Descriptions ........................................................................................................................... 3
6. General Electrical Specifications ........................................................................................................................... 4
7. Magnetic Specifications ........................................................................................................................................ 4
8. Output Behaviour versus Magnetic Pole ............................................................................................................... 4
9. Detailed General Description ................................................................................................................................ 5
10. Unique Features ................................................................................................................................................. 5
11. Performance Graphs .......................................................................................................................................... 6
Magnetic parameters vs. TA ...................................................................................................................... 6 11.1.
Magnetic parameters vs. VDD.................................................................................................................... 6 11.2.
VDSon vs. TA ............................................................................................................................................. 6 11.3.
VDSon vs. VDD ........................................................................................................................................... 6 11.4.
IDD vs. TA .................................................................................................................................................. 6 11.5.
IDD vs. VDD ............................................................................................................................................... 6 11.6.
IOFF vs. TA ................................................................................................................................................. 7 11.7.
IOFF vs. VDD .................................................................................................................................................. 7 11.8.
12. Test Conditions .................................................................................................................................................. 7
Supply Current ........................................................................................................................................... 7 12.1.
Output Saturation Voltage ........................................................................................................................ 7 12.2.
Output Leakage Current ............................................................................................................................ 7 12.3.
Magnetic Thresholds ................................................................................................................................. 7 12.4.
13. Application Information ...................................................................................................................................... 8
Typical Three-Wire Application Circuit ...................................................................................................... 8 13.1.
Two-Wire Circuit........................................................................................................................................ 8 13.2.
Automotive and Harsh, Noisy Environments Three-Wire Circuit ............................................................... 8 13.3.
14. Application Comments ....................................................................................................................................... 8
15. Standard information regarding manufacturability of Melexis products with different soldering processes ...... 9
16. ESD Precautions ................................................................................................................................................. 9
17. Package Information ........................................................................................................................................ 10
SE Package (TSOT-3L) .............................................................................................................................. 10 17.1.
UA Package (TO-92 flat) ........................................................................................................................... 11 17.2.
18. Contact ............................................................................................................................................................. 12
19. Disclaimer ........................................................................................................................................................ 12
US2882
Bipolar Hall Switch Very High Sensitivity
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Glossary of Terms
3.
MilliTesla (mT), Gauss Units of magnetic flux density:
1mT = 10 Gauss
RoHS Restriction of Hazardous Substances
TSOT Thin Small Outline Transistor (TSOT package) also referred with the Melexis package
code SE
ESD Electro-Static Discharge
BLDC Brush-Less Direct-Current
Absolute Maximum Ratings 4.
Symbol
Value Units
Units
VDD
28
V
IDD
50
mA
VOUT
28
V
IOUT
50
mA
TS
-50 to 150
°C
TJ
165
°C
Table 1: Absolute maximum ratings
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum- rated
conditions for extended periods may affect device reliability.
Operating Temperature Range
Symbol
Value
Units
Temperature Suffix “E
TA
-40 to 85
°C
Temperature Suffix “L”
TA
-40 to 150
°C
Pin Definitions and Descriptions 5.
SE Pin No
UA Pin No
Name
Type
Function
1
1
VDD
Supply
Supply Voltage pin
2
3
OUT
Output
Open Drain Output pin
3
2
GND
Ground
Ground pin
Table 2: Pin definitions and descriptions
SE package UA package
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Bipolar Hall Switch Very High Sensitivity
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General Electrical Specifications 6.
DC Operating Parameters TA = 25oC, VDD = 3.5V to 24V (unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Units
Supply Voltage
VDD
Operating
3.5
12
24
V
Supply Current
IDD
B < BRP
1.1
2.6
5
mA
Output Saturation Voltage
VDSon
IOUT = 20mA, B > BOP
0.11
0.5
V
Output Leakage Current
IOFF
B < BRP, VOUT = 24V
0.01
10
µA
Output Rise Time
tr
RL = 1kΩ, CL = 20pF
0.25
µs
Output Fall Time
tf
RL = 1kΩ, CL = 20pF
0.25
µs
Maximum Switching Frequency
FSW
10
kHz
SE Package Thermal Resistance
RTH
Single layer (1S) Jedec board
301
°C/W
UA Package Thermal Resistance
RTH
200
°C/W
Table 3: Electrical specifications
Magnetic Specifications 7.
DC Operating Parameters VDD = 3.5V to 24V (unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Units
Operating Point
BOP
E spec. (TA max = 85°C)
-3
6
mT
Release Point
BRP
-6
3
mT
Hysteresis
BHYST
1.5
6
mT
Operating Point
BOP
L spec. (TA max = 150°C)
-3.5
6
mT
Release Point
BRP
-6
3.5
mT
Hysteresis
BHYST
1.5
6
mT
Table 4: Magnetic specifications
Note: For typical values, please refer to the performance graphs in section 11
Output Behaviour versus Magnetic Pole 8.
DC Operating Parameters TA = -40 C to 150 C, VDD = 3.5V to 24V (unless otherwise specified)
Parameter
Test Conditions (SE)
OUT (SE)
Test Conditions (UA)
OUT(UA)
South pole
B < BRP
High
B > BOP
Low
North pole
B > BOP
Low
B < BRP
High
Table 5: Output behaviour versus magnetic pole
South pole
North pole
North
po
l
e
South pole
OUT = high
OUT = low (VDSon) OUT = high OUT = low (VDSon)
SE package UA package
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Bipolar Hall Switch Very High Sensitivity
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Detailed General Description 9.
Based on mixed signal CMOS technology, Melexis US2882 is a Hall-effect device with very high magnetic sensitivity.
It allows using generic magnets, weak magnets or larger air gap.
The chopper-stabilized amplifier uses switched capacitor technique to suppress the offset generally observed with Hall
sensors and amplifiers. The CMOS technology makes this advanced technique possible and contributes to smaller chip
size and lower current consumption than bipolar technology. The small chip size is also an important factor to minimize
the effect of physical stress.
This combination results in more stable magnetic characteristics and enables faster and more precise design.
The wide operating voltage from 3.5V to 24V, L” and E operating temperature range and low current
consumption make this device especially suitable for automotive and BLDC motor applications.
The output signal is open-drain type. Such output allows simple connectivity with TTL or CMOS logic by using a pull-up
resistor tied between a pull-up voltage and the device output.
Unique Features 10.
The US2882 exhibits bipolar magnetic switching characteristics. Therefore, it operates with both south and north
poles.
Typically, the device behaves as a latch with symmetric operating and
release switching points (BOP=|BRP|). This means magnetic fields with
equivalent strength and opposite direction drive the output high and
low.
Removing the magnetic field (B0) keeps the output in its
previous state. This latching property defines the device as a
magnetic memory.
Depending on the magnetic switching points, the device may also behave as a unipolar positive switch (BOP and BRP
strictly positive) or negative switch (BOP and BRP strictly negative). That is the output can be set high and low by only
using one magnetic pole. In such case, removing the magnetic field changes the output level.
In latch, positive or negative switch behaviour, a magnetic hysteresis BHYST keeps BOP and BRP separated by a minimal
value. This hysteresis prevents output oscillation near the switching point.
BRp 0mT Bop
BRp max Bop max
BRp min Bop min
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Bipolar Hall Switch Very High Sensitivity
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IDD (mA)
VDSon (Volts)
Magnetic field (mT)
IDD (mA)
VDSon (Volts)
Magnetic field (mT)
Performance Graphs 11.
Magnetic parameters vs. TA 11.1. Magnetic parameters vs. VDD 11.2.
6 6
Bop, VDD=5V Brp, VDD=5V
Bop, VDD=12V Brp, VDD=12V
Bop,
Ta=25
°
C
Brp,
Ta=25
°
C
Bop,
Ta=85
°
C
Bop,
Ta=85
°
C
4
Bop, VDD=24V Brp, VDD=24V 4 Bop,
Ta=150
°
C
Brp,
Ta=150
°
C
2 2
0 0
-2 -2
-4 -4
-6
-40 -20 0 20 40 60 80 100 120 140
Ta
(
°
C)
-6 0 5 10 15 20
VDD
(Volts)
VDSon vs. TA 11.3. VDSon vs. VDD 11.4.
0.5
0.5
Ta=-40
°
C
0.4
0.3
VDD=5V
VDD=12V
VDD=24V
0.4
0.3
Ta=25
°
C
Ta=85
°
C
Ta=150
°
C
0.2
0.2
0.1
0.1
0
-40 -20 0 20 40 60 80 100 120 140
Ta
(
°
C)
0 0 5 10 15 20
VDD
(Volts)
IDD vs. TA 11.5. IDD vs. VDD 11.6.
6 6
Ta=-40
°
C
Ta=25
°
C
5 VDD=5V
VDD=12V
4 VDD=24V
5
Ta=85
°
C
Ta=150
°
C
4
3 3
2 2
1 1
0
-40 -20 0 20 40 60 80 100 120 140
Ta
(
°
C)
0 0 5 10 15 20
VDD
(Volts)
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Bipolar Hall Switch Very High Sensitivity
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Ioff (uA)
Ioff (uA)
IOFF vs. TA 11.7. IOFF vs. VDD 11.8.
30 30
25
VDD=5V
VDD=12V
20
VDD=24V
15
25
Ta=-40
°
C
Ta=25
°
C
20
Ta=85
°
C
Ta=150
°
C
15
10 10
5 5
0
-40 -20 0 20 40 60 80 100 120 140
Ta
(
°
C)
0 0 5 10 15 20
VDD
(Volts)
Test Conditions 12.
Note : DUT = Device Under Test
Supply Current 12.1.
Output Saturation Voltage 12.2.
Output Leakage Current 12.3.
Magnetic Thresholds 12.4.
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Bipolar Hall Switch Very High Sensitivity
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Application Information13.
Typical Three-Wire Application Circuit 13.1. Two-Wire Circuit 13.2.
Automotive and Harsh, Noisy Environments 13.3.
Three-Wire Circuit
Application Comments 14.
For proper operation, a 100nF bypass capacitor should be placed as close as possible to the device between the VDD and
ground pin.
For reverse voltage protection, it is recommended to connect a resistor or a diode in series with the VDD pin. When
using a resistor, three points are important:
- the resistor has to limit the reverse current to 50mA maximum (VCC / R1 50mA)
- the resulting device supply voltage VDD has to be higher than VDD min (VDD = VCC R1.IDD)
- the resistor has to withstand the power dissipated in reverse voltage condition (PD = VCC2 / R1)
When using a diode, a reverse current cannot flow and the voltage drop is almost constant (0.7V).
Therefore, a 100/0.25W resistor for 5V application and a diode for higher supply voltage are recommended. Both
solutions provide the required reverse voltage protection.
When a weak power supply is used or when the device is intended to be used in noisy environment, it is
recommended that figure 13.3 from the Application Information section is used.
The low-pass filter formed by R1 and C1 and the zener diode Z1 bypass the disturbances or voltage spikes occurring
on the device supply voltage VDD. The diode D1 provides additional reverse voltage protection.
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Bipolar Hall Switch Very High Sensitivity
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Standard information regarding manufacturability of Melexis products 15.
with different soldering processes
Our products are classified and qualified regarding soldering technology, solderability and moisture sensitivity level
according to following test methods:
Reflow Soldering SMD’s (Surface Mount Devices)
IPC/JEDEC J-STD-020
Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices
(classification reflow profiles according to table 5-2)
EIA/JEDEC JESD22-A113
Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing
(reflow profiles according to table 2)
Wave Soldering SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)
EN60749-20
Resistance of plastic- encapsulated SMD’s to combined effect of moisture and soldering heat
EIA/JEDEC JESD22-B106 and EN60749-15
Resistance to soldering temperature for through-hole mounted devices
Iron Soldering THD’s (Through Hole Devices)
EN60749-15
Resistance to soldering temperature for through-hole mounted devices
Solderability SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)
EIA/JEDEC JESD22-B102 and EN60749-21
Solderability
For all soldering technologies deviating from above mentioned standard conditions (regarding peak temperature,
temperature gradient, temperature profile etc) additional classification and qualification tests have to be agreed upon with
Melexis.
The application of Wave Soldering for SMD’s is allowed only after consulting Melexis regarding assurance of adhesive
strength between device and board.
Melexis is contributing to global environmental conservation by promoting lead free solutions. For more information on
qualifications of RoHS compliant products (RoHS = European directive on the Restriction Of the use of certain Hazardous
Substances) please visit the quality page on our website: http://www.melexis.com/quality.aspx
ESD Precautions 16.
Electronic semiconductor products are sensitive to Electro Static Discharge (ESD).
Always observe Electro Static Discharge control procedures whenever handling semiconductor products.
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Package Information 17.
SE Package (TSOT-3L) 17.1.
Notes:
1. Dimension “D” and “E1” do not include
mold flash or protrusions. Mold flash or
protrusion shall not exceed 0.15mm on
“D” and 0.25mm on “E” per side.
2. Dimension “b” does not include dambar
protrusion.
Marking:
Top side :2yww
2 = part number (US2882)
y = last digit of year
ww = calendar week
Hall plate location
Notes:
1. All dimensions are in millimeters
Package line
TOP VIEW
0.275 TYP
END VIEW
1.417
0.891
1
N
e
E
E1
b
e1
D
A
A2
A1
a
L
C
This table in mm
N
A
A1
A2
D
E
E1
L
b
c
e
e1

3
min
0.025
0.85
2.80
2.60
1.50
0.30
0.30
0.10
0.95
BSC
1.90
BSC
max
1.00
0.10
0.90
3.00
3.00
1.70
0.50
0.45
0.20
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Bipolar Hall Switch Very High Sensitivity
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UA Package (TO-92 flat) 17.2.
Notes:
1. Mold flashes and protrusion are not included.
2. Gate burrs shall not exceed 0.127um on the top side.
This table in mm
A
D
E
F
J
L
L1
S
b1
b2
c
e
e1
min
2.80
3.90
1.40
0.00
2.51
14.0
1.55
0.63
0.35
0.43
0.35
2.51
1.24
max
3.20
4.30
1.60
0.20
2.72
15.0
1.75
0.84
0.44
0.52
0.44
2.57
1.30




min
5°
MAX
5°
REF
45°
REF
3°
REF
max
2.2
1.8
1.2
1.6
0.395
0.455
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Bipolar Hall Switch Very High Sensitivity
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Contact 18.
For the latest version of this document, go to our website at www.melexis.com.
For additional information, please contact our Direct Sales team and get help for your specific needs:
Europe, Africa
Telephone: +32 13 67 04 95
Email : sales_europe@melexis.com
Americas
Telephone: +1 603 223 2362
Email : sales_usa@melexis.com
Asia
Email : sales_asia@melexis.com
Disclaimer 19.
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furnishing, performance or use of the technical data or use of the product(s) as described herein (“Product”) (ii) any and all liability, including without limitation, special,
consequential or incidental damages, and (iii) any and all warranties, express, statutory, implied, or by description, includ ing warranties of fitness for particular purpose, non-
infringement and merchantability. No obligation or liability shall arise or flow out of Melexis’ rendering of technical or other services.
The Information is provided "as is” and Melexis reserves the right to change the Information at any time and without notice. Therefore, before placing orders and/or prior to
designing the Product into a system, users or any third party should obtain the latest version of the relevant information to verify that the information being relied upon is current.
Users or any third party must further determine the suitability of the Product for its application, including the level of re liability required and determine whether it is fit for a
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This document supersedes and replaces all prior information regarding the Product(s) and/or previous versions of this document.
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