MITSUBISHI TRANSISTOR MODULES QM20TD-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM20TD-H * * * * * IC Collector current .......................... 20A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Air conditioner, Small to medium size inverters, CVCF OUTLINE DRAWING & CIRCUIT DIAGRAM 15 7 7 (23.5) 25.5 25.5 5.5 Fig. 1 Fig. 2 4 8.0 6.35 2 8.6 2.8 1.5 5.5 45 28 18 1.2 1.65 3.4 7 15 9.5 11 1.5 (30.5) Dimensions in mm 76 93 P 106 LABEL 13 Tab#110, t=0.5(Fig. 1) 7 (22.45) Tab#250, t=0.8(Fig. 2) BuP EuP u BvP EvP v BwP EwP w BuN EuN BvN EvN BwN EwN N Note: All Transistor Units are Darlingtons. Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20TD-H MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 20 A -IC Collector reverse current DC (forward diode current) 20 A PC Collector dissipation TC=25C 100 W IB Base current DC 1 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 200 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Parameter Symbol Conditions Charged part to case, AC for 1 minute -- Mounting torque Mounting screw M5 -- Weight Typical value ELECTRICAL CHARACTERISTICS 2000 V 1.47~1.96 N*m 15~20 kg*cm 90 g (Tj=25C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V -- -- 1.0 mA ICBO Collector cutoff current VCB=600V, Emitter open -- -- 1.0 mA IEBO Emitter cutoff current VEB=7V -- -- 150 mA VCE (sat) Collector-emitter saturation voltage -- -- 2.0 V VBE (sat) Base-emitter saturation voltage -- -- 2.5 V -VCEO Collector-emitter reverse voltage -IC=20A (diode forward voltage) -- -- 1.5 V hFE DC current gain IC=20A, VCE=2V/5V 75/100 -- -- -- -- -- 1.5 s Switching time VCC=300V, IC=20A, IB1=-IB2=0.4A -- -- 12 s -- -- 2.0 s Transistor part (per 1/6 module) -- -- 1.2 C/ W Diode part (per 1/6 module) -- -- 2.2 C/ W Conductive grease applied (per 1/6 module) -- -- 0.35 C/ W IC=20A, IB=0.28A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20TD-H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) Tj=25C 45 35 DC CURRENT GAIN hFE IB=1A 40 IB=0.4A 30 IB=0.2A 25 IB=0.1A 20 IB=0.04A 15 10 5 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) 10 0 7 5 4 3 2 VCE=2.0V Tj=25C 10 -1 7 5 4 3 2 10 -2 1.0 1.4 1.8 2.2 BASE-EMITTER VOLTAGE 2.6 3.0 ton, ts, tf (s) IC=7A 1 0 Tj=25C Tj=125C 5 7 10 -2 IC=15A 2 3 4 5 7 10 -1 2 3 45 BASE CURRENT IB (A) 2 3 4 5 7 10 2 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 IB=0.28A Tj=25C Tj=125C VBE(sat) 10 0 7 5 4 3 2 VCE(sat) 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 2 2 3 4 5 7 10 1 COLLECTOR CURRENT IC (A) 5 IC=20A Tj=25C Tj=125C COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 3 VCE=2.0V 10 2 7 5 4 3 2 VBE (V) 4 VCE=5.0V 10 0 VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 3 7 5 4 3 2 10 1 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) 50 3 2 ts 10 1 7 5 VCC=300V 4 IB1=-IB2=0.4A Tj=25C 3 Tj=125C 2 tf 10 0 7 5 4 ton 3 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20TD-H MEDIUM POWER SWITCHING USE INSULATED TYPE 3 2 VCC=300V IC=20A IB1=0.4A 10 1 Tj=25C Tj=125C 7 5 4 3 2 REVERSE BIAS SAFE OPERATING AREA 50 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (s) SWITCHING TIME VS. BASE CURRENT (TYPICAL) ts tf 10 0 7 5 4 3 3 4 5 7 10 -1 2 3 4 5 7 10 0 45 40 35 Tj=125C 30 20 15 10 5 0 2 3 BASE REVERSE CURRENT -IB2 (A) 80 s 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 1.6 TIME (s) DERATING FACTOR (%) s 10 0 7 5 3 2 NON-REPETITIVE TC=25C -1 10 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 VCE (V) SECOND BREAKDOWN AREA 90 50 s 0 20 s m s 10 1m 5m COLLECTOR CURRENT IC (A) 100 COLLECTOR-EMITTER VOLTAGE Zth (j-c) (C/ W) 100 200 300 400 500 600 700 800 DERATING FACTOR OF F. B. S. O. A. 100s DC 10 1 7 5 3 2 0 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 IB2=-0.5A 25 10 2 7 5 4 3 2 TC (C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C 10 1 7 5 4 3 2 10 0 0.4 0.8 1.2 1.6 2.0 2.4 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20TD-H MEDIUM POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 180 160 140 120 100 80 60 40 20 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 2 7 VCC=300V 5 IB1=-IB2=0.4A 3 Tj=25C 2 Tj=125C 10 1 7 5 3 2 10 2 Irr 10 1 Qrr trr (s) 200 Irr (A), Qrr (c) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) trr 10 0 10 0 7 5 3 2 10 -1 10 -1 10 -1 2 3 5 7 10 0 2 3 5 7 10 1 2 3 5 7 10 2 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 57 3.2 2.8 Zth (j-c) (C/ W) 2.4 2.0 1.6 1.2 0.8 0.4 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s) Feb.1999