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SWITCHES - SPDT - SMT
11 - 216
v02.1009 GaAs MMIC 40W FAILSAFE
SWITCH, 0.1 - 2.1 GHz
General Description
Features
Functional Diagram
High Input P0.1dB: +46 dBm Tx
Low Insertion Loss: 0.4 dB
High IIP3: +74 dBm
Single Positive Control: 0/+3V to 0/+8V
Failsafe operation; Tx ‘On’ when unpowered
2x2mm DFN SMT Package
Electrical Speci cations, TA = +25°C, Vdd= 5V, Vctl = 0/+5 Vdc, 50 Ohm System*
Typical Applications
The HMC646LP2(E) is ideal for:
• LNA Protection & T/R Switching
• TD-SCDMA / 3G Infrastructure
• Satellite Subscriber Terminals
• Private Mobile Radio & Public Safety Handsets
• Automotive Telematics
The HMC646LP2(E) is an SPDT switch in a leadless
DFN surface mount plastic package for use in trans-
mit / receive and LNA protection applications which
require very low distortion and high power handling
of up to 40 watts with less than 10% duty cycle. This
robust switch can control signals from 100 - 2100
MHz* and is ideal for TD-SCDMA / 3G repeaters,
PMR, automotive telematics, and satellite subscriber
terminal applications. The design provides excep-
tional P0.1dB of +46 dBm and +74 dBm IIP3 on the
Transmit (Tx) port. The failsafe topology provides a
low loss path from Tx to RFC, when no DC power is
available.
HMC646LP2 / 646LP2E
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max Units
Frequency Range 869 - 960 1525 - 1661 2010 - 2025 MHz
Insertion Loss Tx - RFC
RFC - Rx
0.3
0.4
0.6
0.7
0.6
0.8
0.9
1.1
0.7
1.3
1.0
1.7
dB
dB
Isolation Tx - RFC
RFC - Rx
20
28
27
38
15
20
22
30
12
25
17
32
dB
dB
Return Loss Tx - RFC
RFC - Rx
17
25
27
20
25
12
dB
dB
Input Power for 0.1 dB
Compression
Tx - RFC
RFC - Rx
44
20
46
20
46
20
dBm
dBm
Input Third Order
Intercept (Two-tone input
power = +17 dBm each tone)
Tx - RFC
RFC - Rx
71
41
74
42
74
34
dBm
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, (50% CTL to 90% RF)
tOFF (50% CTL to 10% RF)
100
320
320
100
320
320
100
320
320
ns
ns
ns
* Speci cations and data re ect HMC646LP2(E) measured using the respective application circuits for each
designated frequency band found herein