AOT11S60/AOB11S60/AOTF11S60
600V 11A
α
αα
α
MOS
TM
Power Transistor
General Description Product Summary
V
DS
@ T
j,max
700V
I
DM
45A
R
DS(ON),max
0.399Ω
Q
g,typ
11nC
E
oss
@ 400V 2.7µJ
100% UIS Tested
100% R
g
Tested
For Halogen Free add "L" suffix to part number:
AOT11S60L & AOB11S60L & AOTF11S60L
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
E
AS
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
H
T
J
, T
STG
T
L
Symbol
R
θJA
R
θCS
R
θJC
* Drain current limited by maximum junction temperature.
Single pulsed avalanche energy
G
W
60
P
D
Repetitive avalanche energy
C
38178
mJ
mJ
Avalanche Current
C
8*8
Junction and Storage Temperature Range
T
C
=25°C
dv/dt
1.4
20
Power Dissipation
B
120
Gate-Source Voltage V
A
45
T
C
=100°C
Pulsed Drain Current
C
Continuous Drain
Current T
C
=25°C I
D
600
11*11
A2
±30
°C
The AOT11S60& AOB11S60 & AOTF11S60 have been
fabricated using the advanced αMOS
TM
high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low R
DS(on)
, Q
g
and E
OSS
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
V
UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AOT11S60/AOB11S60 AOTF11S60
Drain-Source Voltage
°C/W
W/
o
C
°C
Thermal Characteristics
0.5 -- °C/W
Maximum Junction-to-Case 0.7 3.25
°C/W
Derate above 25
o
C
Parameter AOT11S60/AOB11S60
0.3
-55 to 150
AOTF11S60
100
Units
V/ns
Maximum Case-to-sink
A
Maximum Junction-to-Ambient
A,D
300
65 65
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
J
TO-263
D
2
PAK
G
D
S
G
D
S
D
S
G
Top View
TO-220FTO-220
G
D
S
AOTF11S60
AOT11S60 AOB11S60
Rev 4: Jan 2012 www.aosmd.com Page 1 of 6
AOT11S60/AOB11S60/AOTF11S60
Symbol Min Typ Max Units
600 - -
650 700 -
- - 1
- 10 -
I
GSS
Gate-Body leakage current - - ±100 nΑ
V
GS(th)
Gate Threshold Voltage 2.8 3.5 4.1 V
- 0.35 0.399 Ω
- 0.98 1.11 Ω
V
SD
- 0.84 - V
I
S
Maximum Body-Diode Continuous Current - - 11 A
I
SM
- - 45 A
C
iss
- 545 - pF
C
oss
- 37.3 - pF
C
o(er)
- 30.8 - pF
C
o(tr)
- 93.6 - pF
C
rss
- 1.42 - pF
R
g
- 16.5 - Ω
Q
g
- 11 - nC
Q
gs
- 2.8 - nC
Q
gd
- 3.8 - nC
t
D(on)
- 20 - ns
t
r
- 20 - ns
t
D(off)
- 59 - ns
t
f
- 20 - ns
t
rr
- 250 - ns
I
rm
- 21 - A
Q
rr
- 3.3 -µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Peak Reverse Recovery Current I
F
=5.5A,dI/dt=100A/µs,V
DS
=400V
V
V
GS
=10V, I
D
=3.8A, T
J
=150°C
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V, T
J
=25°C
µA
V
DS
=0V, V
GS
=±30V
V
DS
=600V, V
GS
=0V
V
DS
=5V,
I
D
=250µA
V
DS
=480V, T
J
=150°C
Zero Gate Voltage Drain Current
Body Diode Reverse Recovery Charge I
F
=5.5A,dI/dt=100A/µs,V
DS
=400V
Maximum Body-Diode Pulsed Current
C
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
Body Diode Reverse Recovery Time I
F
=5.5A,dI/dt=100A/µs,V
DS
=400V
Reverse Transfer Capacitance
BV
DSS
V
GS
=10V, V
DS
=400V, I
D
=5.5A,
R
G
=25Ω
Turn-Off Fall Time
Total Gate Charge V
GS
=10V, V
DS
=480V, I
D
=5.5A
Gate Source Charge
Gate Drain Charge
V
GS
=10V, I
D
=3.8A, T
J
=25°C
SWITCHING PARAMETERS
I
DSS
Effective output capacitance, time
related
I
R
DS(ON)
Static Drain-Source On-Resistance
I
S
=5.5A,V
GS
=0V, T
J
=25°C
Diode Forward Voltage
Input Capacitance V
GS
=0V, V
DS
=100V, f=1MHz
Output Capacitance
V
GS
=0V, V
DS
=100V, f=1MHz
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
I
D
=250µA, V
GS
=0V, T
J
=150°C
Effective output capacitance, energy
related
H
V
GS
=0V, V
DS
=0 to 480V, f=1MHz
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C, Ratings are based on low frequency and duty cycles to keep initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, I
AS
=2A, V
DD
=150V, Starting T
J
=25°C
H. C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
I. C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
J. Wavesoldering only allowed at leads.
Rev 4: Jan 2012 www.aosmd.com Page 2 of 6
AOT11S60/AOB11S60/AOTF11S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
4
8
12
16
20
24
0 5 10 15 20
V
DS
(Volts)
Figure 1: On-Region Characteristics@25°C
I
D
(A)
V
GS
=4.5V
6V
10V
7V
0.01
0.1
1
10
100
2 4 6 8 10
V
GS
(Volts)
Figure 3: Transfer Characteristics
I
D
(A)
-55°C
V
DS
=20V
25°C
125°C
0.0
0.3
0.6
0.9
1.2
0 5 10 15 20 25
I
D
(A)
Figure 4: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
(Ω
Ω
Ω
Ω)
V
GS
=10V
0
0.5
1
1.5
2
2.5
3
-100 -50 0 50 100 150 200
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
Normalized On-Resistance
V
GS
=10V
I
D
=3.8A
0.8
0.9
1
1.1
1.2
-100 -50 0 50 100 150 200
T
J
(
o
C)
Figure 6: Break Down vs. Junction Temperature
BV
DSS
(Normalized)
0
4
8
12
16
0 5 10 15 20
V
DS
(Volts)
Figure 2: On-Region Characteristics@125°C
I
D
(A)
V
GS
=4.5V
5V
10V
6V
5V
5.5V 5.5V
7V
Rev 4: Jan 2012 www.aosmd.com Page 3 of 6
AOT11S60/AOB11S60/AOTF11S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 4 8 12 16
Q
g
(nC)
Figure 8: Gate-Charge Characteristics
V
GS
(Volts)
V
DS
=480V
I
D
=5.5A
1
10
100
1000
10000
0 100 200 300 400 500 600
V
DS
(Volts)
Figure 9: Capacitance Characteristics
Capacitance (pF)
C
iss
C
oss
C
rss
0.01
0.1
1
10
100
1 10 100 1000
V
DS
(Volts)
I
D
(Amps)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)11S60 (Note F)
10
µ
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
100
µ
s
0.01
0.1
1
10
100
0.1 1 10 100 1000
V
DS
(Volts)
I
D
(Amps)
Figure 12: Maximum Forward Biased Safe
Operating Area for AOTF11S60(Note F)
10
µ
s
10ms
1ms
0.1s
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
100
µ
s
1s
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0
V
SD
(Volts)
Figure 7: Body-Diode Characteristics (Note E)
I
S
(A)
25°C
125°C
0
1
2
3
4
5
6
0 100 200 300 400 500 600
V
DS
(Volts)
Figure 10: Coss stored Energy
Eoss(uJ)
E
oss
Rev 4: Jan 2012 www.aosmd.com Page 4 of 6
AOT11S60/AOB11S60/AOTF11S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
0 25 50 75 100 125 150
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
Current rating I
D
(A)
0
30
60
90
120
25 50 75 100 125 150 175
T
CASE
(°C)
Figure 13: Avalanche energy
E
AS
(mJ)
0.001
0.01
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOT(B)11S60 (Note F)
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=0.7°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
on
T
P
D
Single Pulse
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOTF11S60 (Note F)
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=3.25°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
T
on
T
P
D
Rev 4: Jan 2012 www.aosmd.com Page 5 of 6
AOT11S60/AOB11S60/AOTF11S60
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dtI
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
AR
AR
Rev 4: Jan 2012 www.aosmd.com Page 6 of 6
