TVS8818MUTAG - ON SEMICONDUCTOR

February, 2016 − Rev. 0 1Publication Order Number:

TVS8814/D

TVS8814, TVS8818

Transient Voltage

Suppressors

Low Capacitance TVS Protection for High

Speed Data

The TVS8814 and TVS8818 transient voltage suppressors are

designed specifically to protect 10/100 and GbE Ethernet signals from

high levels of surge current. Low clamping voltage under high surge

conditions make this device an ideal solution for protecting voltage

sensitive lines leading to Ethernet transceiver chips. Low capacitance

combined with flow-through style packaging allows for easy PCB

layout and matched trace lengths necessary to maintain consistent

impedance between high-speed dif ferential lines. The integrated 4 and

8 lines of protection in flow-thru type packages offer a simplified

solution with premier performance for 10/100 and GbE Ethernet

applications.

Features

•Protection for the Following IEC Standards:

IEC 61000−4−2 (ESD) ±30 kV (Contact)

IEC61000−4−5 (Lightning) 35 A (8/20 ms)

•Flow−Thru Routing Scheme

•2 pF Max, I/O to I/O

•UL Flammability Rating of 94 V−0

•This is a Pb−Free Device

Typical Applications

•10/100 and GbE Ethernet

•MagJacks® / Integrated Magnetics

•Notebooks/Desktops/Servers

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Operating Junction Temperature Range TJ−55 to +125 °C

Storage Temperature Range Tstg −55 to +150 °C

Lead Solder Temperature −

Maximum (10 Seconds) TL260 °C

IEC 61000−4−2 Contact (ESD)

IEC 61000−4−2 Air (ESD) ESD ±30

±30 kV

Maximum Peak Pulse Current

8/20 ms @ TA = 25°C

10/700 ms @ TA = 25°C

IPP 35

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

See Application Note AND8308/D for further description of survivability specs.

MARKING

DIAGRAMS

Device Package Shipping

ORDERING INFORMATION

UDFN8

CASE 506CV

www.onsemi.com

TVS8814MUTAG UDFN8

(Pb−Free) 3000 / Tape & Ree

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

UDFN10

CASE 506CU

TVS8818MUTAG UDFN10

(Pb−Free) 3000 / Tape & Ree

4C M

XX = Specific Device Code

M = Date Code

G= Pb−Free Package

4D M

TVS8814, TVS8818

www.onsemi.com

Figure 1. Pin Schematic

I/O

I/O I/O

I/O

GND GND

TVS8818

I/O

I/O I/O

I/O

Pin1Pin2 Pin4 Pin5 Pin6 Pin9

Pins 3, 8

Note: Common GND – Only minimum of 1 GND connection required

Pin7 Pin10

I/O

I/O I/O

I/O

GND

GND GND

TVS8814 Pin2Pin3Pin6 Pin7

Pins 1, 4, 5, 8

Note: Common GND – Only minimum of 1 GND connection required

GND

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol Parameter

VRWM Working Peak Voltage

IRMaximum Reverse Leakage Current @ VRWM

VBR Breakdown Voltage @ IT

ITTest Current

VHOLD Holding Reverse Voltage

IHOLD Holding Reverse Current

RDYN Dynamic Resistance

IPP Maximum Peak Pulse Current

VCClamping Voltage @ IPP

VC = VHOLD + (IPP * RDYN)Uni−Directional TVS

IPP

VRWM

VCL VBR VCL

RDYN

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter Symbol Conditions Min Typ Max Unit

Reverse Working Voltage VRWM Any I/O to GND (Note 1) 3.0 V

Forward Voltage VFIF = 10 mA, GND to All IO Pins 0.5 0.85 1.1 V

Breakdown Voltage VBR IT = 1 mA, I/O to GND 3.2 3.5 5.0 V

Reverse Leakage Current IRVRWM = 3.0 V, I/O to GND 0.5 mA

Clamping Voltage VCIPP = 1 A, Any I/O to GND (8/20 ms pulse) 5.0 V

Clamping Voltage VCIPP = 10 A, Any I/O to GND (8/20 ms pulse) 6.0 V

Clamping Voltage VCIPP = 25 A, Any I/O to GND (8/20 ms pulse) 10 V

Clamping Voltage VCIPP = 35 A, Any I/O to GND (8/20 ms pulse) 15 V

Clamping Voltage VCIEC61000−4−2, ±8 kV Contact See Figures 7 and 8 V

Junction Capacitance CJVR = 0 V, f = 1 MHz between I/O Pins 1.5 2.0 pF

Junction Capacitance CJVR = 0 V, f = 1 MHz between I/O Pins and GND 5.0 pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC

or continuous peak operating voltage level.

TVS8814, TVS8818

www.onsemi.com

Figure 2. IEC61000−4−5 8/20 ms Pulse

Waveform

TIME (ms)

Ipp - PEAK PULSE CURRENT - %Ipp

100

tr = rise time to peak value [8 ms]

tf = decay time to half value [20 ms]

trtf

Peak

Value

Half Value

Figure 3. Clamping Voltage vs. Peak Pulse Current

(tp = 8/20 ms per Figure 2)

003530255101520

Ipk (A)

Vpk (V)

IO−IO

IO−GND

Figure 4. IEC61000−4−5 10/700 ms Pulse

Waveform

TIME (ms)

Ipp - PEAK PULSE CURRENT - %Ipp

100

tr = rise time to peak value [10 ms]

tf = decay time to half value [700 ms]

trtf

Peak

Value

Half Value

Figure 5. Clamping Voltage vs. Peak Pulse Current

(tp = 10/700 ms per Figure 4)

00Ipk (A)

Vpk (V)

IO−IO

2 4 6 8 10 12 14 16 18 20

IO−GND

Figure 6. IEC61000−2−4 +8 kV Contact

Clamping Voltage

−20 140120100800204060

TIME (ns)

VOLTAGE (V)

−10

Figure 7. IEC61000−2−4 −8 kV Contact

Clamping Voltage

−20 140120100800204060

TIME (ns)

VOLTAGE (V)

−10

−20

−30

−40

−50

−60

−70

−80

−90

TVS8814, TVS8818

www.onsemi.com

Figure 8. IV Characteristics

1.E−01

−2 63−1 0 1 2

V (V)

I (A)

1.E−02

1.E−03

1.E−04

1.E−05

1.E−06

1.E−07

1.E−08

1.E−09

1.E−10

Figure 9. CV Characteristics

5.0

0VBias (V)

C (pF)

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

00.5 1.0 1.5 2.0 2.5 3.0 3.5

IO−IO

1.E−11

1.E−12

IO−GND

Figure 10. RF Insertion Loss Figure 11. Capacitance Over Frequency

IO−GND

TVS8814, TVS8818

www.onsemi.com

Figure 12. 10/100 Ethernet Layout Diagram and Flow−thru Routing Scheme

Figure 13. GbE Ethernet Layout Diagram and Flow−thru Routing Scheme

TVS8814

RJ−45

Connector

RJ−45

Connector

TVS8818

Black = Top Layer

Red = Other Layer

Black = Top Layer

Red = Other Layer

DFN8

DFN10

TVS8814, TVS8818

www.onsemi.com

PACKAGE DIMENSIONS

UDFN8 2.2x2, 0.575P

CASE 506CV

ISSUE A

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ÇÇÇ

DIM MIN MAX

MILLIMETERS

A1 0.00 0.05

b0.15 0.25

D2.20 BSC

E2.00 BSC

e0.575 BSC

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSIONS b APPLIES TO PLATED

TERMINAL AND IS MEASURED BETWEEN

0.15 AND 0.25 MM FROM TERMINAL TIP.

0.127 REF

PIN ONE

C0.10

10X

NOTE 3

(A3)

SEATING

PLANE

C0.05

0.45 0.55

L0.25 0.35

REFERENCE

TOP VIEW

SIDE VIEW

BOTTOM VIEW

0.22

2.30

DIMENSIONS: MILLIMETERS

MOUNTING FOOTPRINT

RECOMMENDED

DET AIL A BAC

0.10

0.05

L1 0.05 0.15

DETAIL B

PACKAGE

OUTLINE

DETAIL A

ALTERNATE TERMINAL

CONSTRUCTION

ÉÉÉ

ÇÇÇ

DETAIL B

MOLD CMPDEXPOSED Cu

ALTERNATE

CONSTRUCTIONS

ÉÉ

ÇÇ

9X e2 0.40 BSC

E3 0.20 BSC

L2 0.95 1.05

eE3

0.40

0.50

0.575

E3 0.20

0.20 0.40

0.575

TVS8814, TVS8818

www.onsemi.com

PACKAGE DIMENSIONS

ÇÇÇ

UDFN10 3.5x2, 0.575P

CASE 506CU

ISSUE O

DIM MIN MAX

MILLIMETERS

A1 0.00 0.05

b0.15 0.25

D3.50 BSC

E2.00 BSC

e0.575 BSC

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSIONS b APPLIES TO PLATED

TERMINAL AND IS MEASURED BETWEEN

0.15 AND 0.25 MM FROM TERMINAL TIP.

4. COPLANARITY APPLIES TO THE EXPOSED

PAD AS WELL AS THE TERMINALS.

0.127 REF

PIN ONE

C0.10

10X

13X

NOTE 3

NOTE 4 C

(A3)

SEATING

PLANE

C0.05

0.45 0.55

L0.25 0.35

REFERENCE

TOP VIEW

SIDE VIEW

BOTTOM VIEW 0.22

1.10 2.30

DIMENSIONS: MILLIMETERS

MOUNTING FOOTPRINT*

RECOMMENDED

DET AIL A

BAC

0.10

0.05

L1 0.05 0.15

DETAIL B

0.40

PACKAGE

OUTLINE

DETAIL A

ALTERNATE TERMINAL

CONSTRUCTION

ÉÉ

ÇÇ

DETAIL B

MOLD CMPDEXPOSED Cu

ALTERNATE

CONSTRUCTIONS

ÉÉ

ÇÇ

13X e2 0.40 BSC

e3 3.10 BSC

L2 0.95 1.05

3.50

0.40

0.50

0.575

0.31

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

TVS8814/D

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