T-1 3/4 (5mm) INFRA-RED EMITTING DIODE L-53SF4C Description Features ! MECHANICALLY AND SPECTRALLY MATCHED TO THE L-51P3C PHOTOTRANSISTOR. ! WATER SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. CLEAR LENS AVAILABLE HIGH POWER OUTPUT. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice. SPEC NO: DSAB1924 APPROVED: J.LU REV NO: V.2 CHECKED: Allen Liu DATE:MAR/06/2003 DRAWN:Y.H.LI PAGE: 1 OF 3 Selection Guide P ar t N o . Dic e L-53SF4C Po (m W/s r ) @ 20 m A *50m A L en s Ty p e GaAlAs V i ew i n g An g l e Min . Ty p . 21/2 7 20 30 *10 *30 30 WATER CLEAR Notes: 1. 1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value. 2. * Luminous intensity with asterisk is measured at 50mA. Electrical / Optical Characteristics at TA=25C P ar am et er P/N Sy m b o l Ty p . Max . Un it Co n d itio n Forward Voltage S F4 VF 1.3 1.6 V IF = 2 0 m A Reverse Current S F4 IR - 10 uA V R= 5 V Capacitance S F4 C 90 - pF V F = 0 V; f= 1 M Hz Wavelength at peak emission S F4 P 880 - nm IF = 2 0 m A Spectral line half-width S F4 1/2 50 - nm IF = 2 0 m A Absolute Maximum Ratings at TA=25C It em Sy m b o l S F4 Un its Power Dissipation PT 100 mW Forward Current IF 50 mA Peak Forward Current[1] i FS 1.2 A Reverse Voltage VR 5 V Operating Temperature TA -40~ +85 C TSTG -40~ +85 C Storage Temperature 260C For 5 Seconds Lead Solder Temperature[2] Notes: 1. 1/100 Duty Cycle, 10us Pulse Width. 2. 2mm below package base. SPEC NO: DSAB1924 APPROVED: J.LU REV NO: V.2 CHECKED: Allen Liu DATE:MAR/06/2003 DRAWN:Y.H.LI PAGE: 2 OF 3 L-53SF4C SPEC NO: DSAB1924 APPROVED: J.LU REV NO: V.2 CHECKED: Allen Liu DATE:MAR/06/2003 DRAWN:Y.H.LI PAGE: 3 OF 3