G E SOLID STATE o1 de Qsazsoaa coizays 2 - 3875081 GE SOLID STATE D1E 17349 DO FL 35/9 . General-Purpose Power Transistors us * File Number 141 2N1700 Silicon N-P-N TERMINAL DESIGNATIONS Power-Switching Transistor : For Switching Applications cicase) Features: Operation at high junction temperatures 9208-27512 JEDEC TO-205AD The RCA-2N1700 silicon n-p-n transistor is intended for 4 wide variety of uses in industrial equipment. They are particularly useful In applications such as inverters, chop- pers, voltage and current regulators, and relay-actuating circults, The 2N1700 is supplied in a JEDEC TO-205AD package. MAXIMUM RATINGS, Absolute-Maximum Values: 2N1700 * Voeo vise ensees CON e decree eee enarsaenesetenabesetesevenree veeeeee 60 v * Veex Vor -15V oc ccceeeeees veeeecnees 60 Vv * Veeo(SUs) ....5.8 sevevees 40 v * Veso . 6 v Ios. os 1 A "Whee cece cece tee ceeeeeeeneneenensnersts Chane reeeeteenneeneeeetaveene 0.75 A Py { I Te S 28C vee eee 5 Ww To > 25C vecsesetares 0.029 C/W a TLE ___~. -65 to +200 c Th At distance = 1/16 in. + 1/32 in. (1.58 mm + 0.8 mm) from seating plane for 108 MAX, vivssecseeseecsencescereuctnceee ereees 255 C In accordance with JEOEC registration data format. 353 G E SOLID STATE O1 DE Jsa7s0a1 OO47350 4 i 3875081 GE SOLID STATE Ot 17350 Dd? 25719 General-Purpose Power Transistors 2N1700 ELECTRICAL CHARACTERISTICS, Tc=25 C Uniess Otherwise Specified TEST CONDITIONS LIMITS CHARAC- VOLTAGE CURRENT TERISTIC V de Ade 2n1700 UNITS Vee Vee le le Min. Max. | toao i Vca=30 V _ 75 HA Ven=60 V - 25 "| Te=150C, . Vce=30 V 7 1 mA * | leso -6 0 _ 25 HA * | Vceo(sus) 0.058 0 40 _ Vv * | Vcex 1.5 0.0005 605 _ Vv * | hee 4 0.18 20 80 20 14 6 - * | Vee 4 0.1 - 2 Vv 20 1 _ 12.5 * Troe(sat) 0.1 0.01 = 10 a * | Vee(sat) 1a 0.5 _ i2 V Ne f=1 MHz 4 5 40 _- foto | Ven=6V 0.005 400 _ kHz Vos=28 V 0.0005 1.2 (typ.) MHz Coto Vce=40 V, 150 (typ.) pF f=1 MHz qt 10 (typ.) ms * | Rae = 35 . Rae = 200 cw *In accordance with JEDEC registration data format. *Pulsed: pulse duration = 300 ys, duty factor S 2%, CAUTION: The sustaining voltages Vceo(sus) and Vcex({sus) MUST NOT be measured on a curve tracer. WOLTAGE, 3 8 < # 3 : i z g 5 z 3 2 : i z 3 2 3 g z : 5 2 E : 10 123150 HTS 200. CASE TEMPERATURE [Tc1"C 32C3- 22434 0 100 130 200 JUNCTION TEMPERATURE iTy}*C sien doo Fig, 1 - Derating curve, Fig, 2 - Typical collector-cutoff currant characteristics. 1 354 _ ! GE SOLTD STATE Oo1 pe sa7soa1 OO17351 0 I 3875081 GE SOLID STATE O1E 17351 dD TS3S"/9 \ General-Purpose Power Transistors as . 2N1700 +TO-EMITTER VOLTAGE ( CASE TEMPERATURE {Ty 10 25C COLLECTOR CURRENT (I}4 BASE CURRENT o 1 0m 8% 40 SO. 8 BASE -TO-EMITTER VOLTAGE (YghV gocg isan COLLECTOR ~TO-EMITTER VOLTAGE tvcel- : : 92Cum-215995A2 Fig, 3 - Typical Input characteristics.. Fig, 4 - Typical output characteristics. CO COLLECTOR CURRENT [I}A DC FORWARO-CURRENT TRANSFER RATIO( bre) 92C5-1S739R1 Fig. ~ Typical dc beta characteristics. \ Ta, | ET a INPUT WAVE ror) BASE CURRENT | INPUT FROM SSSTPy oe 90 To PULSE * Ho GENERATOR COLLECTOR CURRENT ft TR 10% | tol Ll TIME = ty . Voce l2 ~~ tt Vppts SV 925-20238 tr Rg 50a on" CONDITION Te 825C OUTPUT WAVE FORM 92CS ~10029 2N1700 Test Conditions: Rev cvccc csv cence rect ent rere teeeentesenateteenteseees peeeaeee iW 700 n . lar cece eee ee eae PEO meee tte eee reenter erent eer etteeeetagee 20 mA IB2 cece ec cee scene ree teenee Cenc tence en eee eet r en tenteeereteneens 8.5 mA Switching Times: 0.2 us 1 us 0.6 us 1 uS Fig. 6 - Test circuit and oscilloscope display for measurement of switching times. - 355