Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
50 62.5
73 110
R
θJL
31 40
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s R
θJA
°C/W
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±20
Pulsed Drain Current
B
Power Dissipation T
A
=25°C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient
A
Steady-State
6.3
5
40
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
60
W
Junction and Storage Temperature Range
A
P
D
°C
2
1.28
-55 to 150
T
A
=70°C
I
D
AO4826
60V Dual N-Channel MOSFET
Product Summary
V
DS
(V) = 60V
I
D
= 6.3A (V
GS
= 10V)
R
DS(ON)
< 25mΩ (V
GS
= 10V)
R
DS(ON)
< 30mΩ (V
GS
= 4.5V)
100% UIS Tested
100% Rg Tested
General Description
The AO4826 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
SOIC-8
Top View Bottom View
Pin1
G1
S1
G2
S2
D1
D1
D2
D2
Top View
G2
D2
S2
G1
D1
S1
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4826
Symbol Min Typ Max Units
BV
DSS
60 V
1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
1 2.1 3 V
I
D(ON)
40 A
20 25
T
J
=125°C 34 42
22 30 mΩ
g
FS
27 S
V
SD
0.74 1 V
I
S
3 A
I
SM
40 A
C
iss
1920 2300 pF
C
oss
155 pF
C
rss
116 pF
R
g
0.65 0.8 Ω
Q
g
(10V) 47.6 58 nC
Q
g
(4.5V) 24.2 30 nC
Q
gs
6 nC
Q
gd
14.4 nC
t
D(on)
7.6 ns
t
r
5 ns
t
D(off)
28.9 ns
t
f
5.5 ns
t
rr
33.2 40 ns
Q
rr
43 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
On state drain current
Maximum Body-Diode Continuous Current
Input Capacitance
Body Diode Reverse Recovery Charge I
F
=6.3A, dI/dt=100A/µs
Total Gate Charge
Gate Source Charge
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Pulsed Body Diode Current
B
Body Diode Reverse Recovery Time
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
I
F
=6.3A, dI/dt=100A/µs
V
GS
=10V, V
DS
=5V
V
DS
=V
GS
I
D
=250µA
V
DS
=48V, V
GS
=0V
V
DS
=0V, V
GS
= ±20V
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
I
DSS
µA
Gate Threshold Voltage
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
mΩ
V
GS
=4.5V, I
D
=5.7A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=6.3A
V
GS
=10V, I
D
=6.3A
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=10V, V
DS
=30V, I
D
=6.3A
Total Gate Charge
Gate Drain Charge
Reverse Transfer Capacitance V
GS
=0V, V
DS
=30V, f=1MHz
SWITCHING PARAMETERS
V
GS
=10V, V
DS
=30V, R
L
=4.7Ω,
R
GEN
=3Ω
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 6 : Nov. 2010
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4826
0
10
20
30
40
012345
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=3V
3.5V
4V
4.5V
10V
0
5
10
15
20
25
30
1.5 2 2.5 3 3.5 4
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
16
18
20
22
24
0 5 10 15 20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
V
GS
=10V
V
GS
=4.5V
I
D
=5.7A
10
20
30
40
50
2 4 6 8 10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
25°C
125°C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=6.3A
25°C
125°C
I
D
=6.3A
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4826
0
2
4
6
8
10
0 10 20 30 40 50
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
500
1000
1500
2000
2500
3000
3500
0 5 10 15 20 25 30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
0
10
20
30
40
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1 1 10 100
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
10ms
1ms
0.1s
1s
10s
DC
T
J(Max)
=150°C
T
A
=25°C
R
DS(ON)
limited
V
DS
=15V
I
D
=6.3A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=62.5°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
A
=25°C
10
µ
s
Alpha & Omega Semiconductor, Ltd. www.aosmd.com