DDATA SHEET
Product specification September 1997
DISCRETE SEMICONDUCTORS
BT152B series
Thyristors
1;3 Semiconductors Product specification
Thyristors BT152B series
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope suitable for surface
mounting, intended for use in BT152B- 400R 600R 800R
applications requiring high VDRM, Repetitive peak off-state 450 650 800 V
bidirectional blocking voltage VRRM voltages
capability and high thermal cycling IT(AV) Average on-state current 13 13 13 A
performance. Typical applications IT(RMS) RMS on-state current 20 20 20 A
include motor control, industrial and ITSM Non-repetitive peak on-state 200 200 200 A
domestic lighting, heating and static current
switching.
PINNING - SOT404 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 cathode
2 anode
3 gate
mb anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-400R -600R -800R
VDRM Repetitive peak off-state - 45016501800 V
voltages
IT(AV) Average on-state current half sine wave; Tmb ≤ 103 ˚C - 13 A
IT(RMS) RMS on-state current all conduction angles - 20 A
ITSM Non-repetitive peak half sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 10 ms - 200 A
t = 8.3 ms - 220 A
I2tI
2t for fusing t = 10 ms - 200 A2s
dIT/dt Repetitive rate of rise of ITM = 50 A; IG = 0.2 A; - 200 A/μs
on-state current after dIG/dt = 0.2 A/μs
triggering
IGM Peak gate current - 5 A
VGM Peak gate voltage - 5 V
VRGM Peak reverse gate voltage - 5 V
PGM Peak gate power - 20 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C
TjOperating junction - 125 ˚C
temperature
13
mb
2
ak
g
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
September 1997 1 Rev 1.100
1;3 Semiconductors Product specification
Thyristors BT152B series
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance - - 1.1 K/W
junction to mounting base
Rth j-a Thermal resistance minimum footprint, FR4 board - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current VD = 12 V; IT = 0.1 A - 3 32 mA
ILLatching current VD = 12 V; IGT = 0.1 A - 25 80 mA
IHHolding current VD = 12 V; IGT = 0.1 A - 15 60 mA
VTOn-state voltage IT = 40 A - 1.4 1.75 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.6 1.5 V
VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
ID, IROff-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C - 0.2 1.0 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; 200 300 - V/μs
off-state voltage exponential waveform gate open circuit
tgt Gate controlled turn-on VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/μs; - 2 - μs
time ITM = 40 A
tqCircuit commutated VD = 67% VDRM(max); Tj = 125 ˚C; - 70 - μs
turn-off time ITM = 50 A; VR = 25 V; dITM/dt = 30 A/μs;
dVD/dt = 50 V/μs; RGK = 100 Ω
September 1997 2 Rev 1.100
1;3 Semiconductors Product specification
Thyristors BT152B series
Fig.1. Maximum on-state dissipation, P
tot
, versus
average on-state current, I
T(AV)
, where
a = form factor = I
T(RMS)
/ I
T(AV)
.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
10ms.
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.4. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
103˚C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
0 5 10 15
0
5
10
15
20
25
a = 1.57
1.9
2.2
2.8
4
BT152
IT(AV) / A
Ptot / W Tmb(max) / C
125
119.5
114
108.5
103
97.5
conduction
angle form
factor
degrees
30
60
90
120
180
4
2.8
2.2
1.9
1.57
a
1 10 100 1000
0
50
100
150
200
250 BT152
Number of half cycles at 50Hz
ITSM / A
TITSM
time
I
Tj initial = 25 C max
T
10
100
1000 BT152
10us 100us 1ms 10ms
T / s
ITSM / A
TITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
0.01 0.1 1 10
0
10
20
30
40
50 BT152
surge duration / s
IT(RMS) / A
-50 0 50 100 150
0
5
10
15
20
25 BT152
Tmb / C
IT(RMS) / A
103 C
-50 0 50 100 150
0.4
0.6
0.8
1
1.2
1.4
1.6 BT151
Tj / C
VGT(Tj)
VGT(25 C)
September 1997 3 Rev 1.100
1;3 Semiconductors Product specification
Thyristors BT152B series
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3BT152
Tj / C
IGT(Tj)
IGT(25 C)
0 0.5 1 1.5 2
0
10
20
30
40
50
typ
BT152
VT / V
IT / A
max
Tj = 125 C
Tj = 25 C
Vo = 1.12 V
Rs = 0.015 ohms
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3BT145
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10 BT152
tp / s
Zth j-mb (K/W)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
tp
P
t
D
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3BT152
Tj / C
IH(Tj)
IH(25 C)
0 50 100 150
10
100
1000
10000
Tj / C
dVD/dt (V/us)
gate open circuit
RGK = 100 Ohms
September 1997 4 Rev 1.100
1;3 Semiconductors Product specification
Thyristors BT152B series
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
Fig.13. SOT404 : centre pin connected to mounting base.
Notes
1. Epoxy meets UL94 V0 at 1/8".
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.14. SOT404 : minimum pad sizes for surface mounting
.
Notes
1. Plastic meets UL94 V0 at 1/8".
11 max
4.5 max
1.4 max
10.3 max
0.5
15.4
2.5
0.85 max
(x2)
2.54 (x2)
17.5
11.5
9.0
5.08
3.8
2.0
September 1997 5 Rev 1.100
NXP Semiconductors
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