All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 11 Rev. 01, 2011-03-30
PTFB210801FA
Confidential, Limited Internal Distribution
RF Characteristics
Two-carrier WCDMA Measurements (tested in Inneon test xture)
VDD = 28 V, IDQ = 750 mA, POUT = 20 W average, ƒ1 = 2160 MHz, ƒ2 = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps 18 18.5 — dB
Drain Efciency hD 28 31 — %
Intermodulation Distortion IMD — –30 –28 dBc
Thermally-Enhanced High Power RF LDMOS FET
80 W, 28 V, 2110 – 2170 MHz
Description
The PTFB210801FA LDMOS FET is designed for use in multi-
standard cellular power amplier applications in the 2110 to 2170 MHz
frequency band. Features include input and output matching,
high gain and thermally-enhanced packages with earless anges.
Manufactured with Inneon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTFB210801FA
Package H-37265-2
Features
• Broadband internal matching
• Typical single-carrier WCDMA performance at
2170 MHz, 28 V
- Average output power = 25 W
- Linear Gain = 18.5 dB
- Efciency = 32.5%
- Adjacent channel power = –37 dBc
• Typical CW performance, 2170 MHz, 28 V
- Output power at P1dB = 80 W
- Efciency = 55%
• Integrated ESD protection
• Capable of handling 10:1 VSWR @ 28 V,
80 W (CW) output power
• Pb-free and RoHS compliant
5
10
15
20
25
30
35
40
45
-50
-45
-40
-35
-30
-25
-20
-15
36 37 38 39 40 41 42 43 44 45 46 47 48
Efficiency (%)
ACPR (dBc)
Output Power (dBm)
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 750 mA,
ƒ = 2140 MHz, 10 MHz Spacing, 8dB PAR
Adj Lower
Adj Upper
Alt
Efficiency
Data Sheet 2 of 11 Rev. 01, 2011-03-30
PTFB210801FA
Confidential, Limited Internal Distribution
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W
Operating Gate Voltage VDS = 30 V, IDQ = 750 mA VGS 2.3 3.0 3.3 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –6 to +10 V
Junction Temperature TJ 200 °C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 80 W CW) RqJC 0.50 °C/W
Ordering Information
Type and Version Package Type Package Description Shipping
PTFB210801FA V1 H-37265-2 Ceramic open-cavity, earless ange Tray
PTFB210801FA V1 R250 H-37265-2 Ceramic open-cavity, earless ange Tape & Reel, 250 pcs
PTFB210801FA
Confidential, Limited Internal Distribution
Data Sheet 3 of 11 Rev. 01, 2011-03-30
Typical Performance (data taken in a production test xture)
Efficiency (%)
ACPR (dBc)
Output Power (dBm)
Two-carrier WCDMA vs. Frequency
V
DD
= 28 V, I
DQ
= 750 mA,
10 MHz Spacing, PAR = 8 dB
Adj 2110 MHz
Adj 2170 MHz
Alt 2110 MHz
Alt 2170 MHz
Eff. 2110 MHz
Eff. 2170 MHz
Gain (dB)
Output Power (dBm)
CW Performance vs. Temperature
V
DD
= 28 V, I
DQ
= 750 mA, ƒ= 2140 MHz
Gain
Efficiency
Efficiency (%)
-25°C
25°C
85°C
-30
-25
-20
-15
-10
-5
0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6
Input Return Loss (dB)
Power Gain (dB)
Frequency (GHz)
Single Side Small Signal CW
Gain & Input Return Loss
V
DD
= 28 V, I
DQ
= 750 mA
IRL
Gain
0
10
20
30
40
50
60
17.0
17.5
18.0
18.5
19.0
19.5
20.0
39 40 41 42 43 44 45 46 47 48 49 50 51
Efficiency (%)
Power Gain (dB)
Output Power (dBm)
CW Gain & Efficiency
vs. Output Power & VDD
ƒ = 2140 MHz, I
DQ
= 750 mA
V
DD
= 30 V
V
DD
= 28 V
Data Sheet 4 of 11 Rev. 01, 2011-03-30
PTFB210801FA
Confidential, Limited Internal Distribution
Z Source Z Load
G
S
D
Typical Performance (cont.)
Drain Efficiency (%)
Gain (dB)
Output Power (dBm)
CW Sweep at P
1dB
vs. Frequency
V
DD
= 28 V, I
DQ
= 750 mA, T = 25°C
Gain
Efficiency
2110 MHz
2140 MHz
2170 MHz
Gain (dB)
Average Output Power (dBm)
CW Performance at Various I
DQ
ƒ = 2170 MHz
V
DD
= 28 V, I
DQ
= Varying
620mA
720mA
820mA
920mA
Broadband Circuit Impedance
Frequency Z Source W Z Load W
MHz R jX R jX
2110 16.3 –4.6 2.2 –4.1
2140 13.6 –4.0 2.3 –4.1
2170 11.3 –2.9 2.2 –4.4
PTFB210801FA
Confidential, Limited Internal Distribution
Data Sheet 5 of 11 Rev. 01, 2011-03-30
R801
3000 Ohm R102
2000 Ohm
TL129 TL132
TL131
TL130
R101
10 Ohm
1 2
3
TL102
S
C
B
E
1
2
3
4
S5
C801
1000 pF
C802
1000 pF C803
1000 pF
C101
10000000 pF
TL103
1
2
3
4
TL104
R802
1300 Ohm
R803
1200 Ohm
R804
2000 Ohm
TL105 TL106
TL107 TL108
TL109
1 2
3
TL112
TL113
R104
10 Ohm
12
3
TL114
1 2
3
TL115
1
2
3
TL116
1
2
3
TL117
TL118
TL119
L1
22 nH
C103
10000000 pF
TL120
12
3
TL121
1
2
3
TL122 1
2
3
TL123
TL124
1
2
3
TL101
L2
22 nH
1
2
34
S1
1
2
34
S2
1
2
3
S3
1
2
3 4
5
6
78
S4
C105
15 pF
TL125 TL126 TL127
TL128
C104
1.5 pF
C102
15 pF TL110
R103
10 Ohm
TL111
b210801fa_bdin_03-15-2011
RF_IN GATE DUT
(Pin G)
TL208
1
2
3
4
TL207
TL209
C201
10000000 pF
C203
10000000 pF
12
3
TL221
12
3
TL222
1 2
3
TL212
1
2
3
4
TL213 TL214 TL215TL216
1 2
3
TL217
TL218 TL219
TL220
TL201
TL202
TL203
TL204
1
2
3
4
TL205
1
2
3
4
TL206
C209
15 pF
C208
2.2 pF
TL223
TL224
C206
2.7 pF
C207
2.7 pF
12
3
TL228 TL210
TL227 TL211
C205
22000000 pF
TL226 TL225
C210
22000000 pF
C211
4710000 pF
C202
4710000 pF C212
18 pF
C204
18 pF
b210801fa_bdout_03-15-2011
DRAIN DUT
(Pin D) RF_OUT
Reference Circuit
Reference circuit input schematic for ƒ = 2170 MHz
Reference circuit output schematic for ƒ = 2170 MHz
Data Sheet 6 of 11 Rev. 01, 2011-03-30
PTFB210801FA
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Description
DUT PTFB210801FA
PCB 0.508 mm [.020"] thick, er = 3.66, Rogers 4350, 1 oz. copper
Electrical Characteristics at 2170 MHz
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Input
TL101, TL117 0.023 λ, 35.71 W W1 = 1.905, W2 = 1.905, W3 = 1.905 W1 = 75, W2 = 75, W3 = 75
TL102, TL115 0.012 λ, 35.71 W W1 = 1.905, W2 = 1.905, W3 = 1.016 W1 = 75, W2 = 75, W3 = 40
TL103 0.021 λ, 54.17 W W = 1.016, L = 1.778 W = 40, L = 70
TL104 W1 = 9.398, W2 = 1.270, W3 = 9.398, W1 = 370, W2 = 50, W3 = 370,
W4 = 1.270 W4 = 40
TL105 W1 = 1.024, W2 = 9.398 W1 = 40, W2 = 370
TL106 W1 = 9.398, W2 = 9.398 W1 = 370, W2 = 370
TL107 0.050 λ, 53.93 W W = 1.024, L = 4.153 W = 40, L = 164
TL108 0.025 λ, 9.59 W W = 9.398, L = 1.905 W = 370, L = 75
TL109 0.019 λ, 53.93 W W = 1.024, L = 1.605 W = 40, L = 63
TL110 0.092 λ, 53.93 W W = 1.024, L = 7.696 W = 40, L = 303
TL111 0.072 λ, 53.93 W W = 1.024, L = 5.994 W = 40, L = 236
TL112 0.011 λ, 53.93 W W1 = 1.024, W2 = 1.024, W3 = 0.889 W1 = 40, W2 = 40, W3 = 35
TL113 0.212 λ, 47.12 W W = 1.270, L = 17.577 W = 50, L = 692
TL114, TL121 0.039 λ, 47.12 W W1 = 1.270, W2 = 1.270, W3 = 3.200 W1 = 50, W2 = 50, W3 = 126
TL116, TL122, TL123 0.016 λ, 35.71 W W1 = 1.905, W2 = 1.905, W3 = 1.270 W1 = 75, W2 = 75, W3 = 50
TL118, TL120 0.004 λ, 35.71 W W = 1.905, L = 0.361 W = 75, L = 14
TL119 0.021 λ, 54.17 W W = 1.016, L = 1.778 W = 40, L = 70
TL124 0.039 λ, 35.71 W W = 1.905, L = 3.172 W = 75, L = 125
TL125 0.048 λ, 47.12 W W = 1.270, L = 4.013 W = 50, L = 158
TL126 0.071 λ, 47.12 W W = 1.270, L = 5.906 W = 50, L = 233
TL127, TL128 0.005 λ, 47.12 W W = 1.270, L = 0.406 W = 50, L = 16
TL129 W1 = 1.024, W2 = 2.032 W1 = 40, W2 = 80
TL130, TL131 0.012 λ, 34.08 W W = 2.032, L = 1.016 W = 80, L = 40
TL132 W1 = 2.032, W2 = 1.024 W1 = 80, W2 = 40
table continued on page 7
PTFB210801FA
Confidential, Limited Internal Distribution
Data Sheet 7 of 11 Rev. 01, 2011-03-30
Reference Circuit (cont.)
Electrical Characteristics at 2170 MHz
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Output
TL201, TL203 0.009 λ, 47.12 W W = 1.270, L = 0.762 W = 50, L = 30
TL202, TL204 0.064 λ, 47.12 W W = 1.270, L = 5.334 W = 50, L = 210
TL205, TL206 W1 = 1.905, W2 = 2.540, W3 = 1.905 W1 = 75, W2 = 100, W3 = 75,
W4 = 2.540 W4 = 100
TL207 W1 = 9.398, W2 = 1.270, W3 = 9.398 W1 = 370, W2 = 50, W3 = 370,
W4 = 1.270 W4 = 50
TL208, TL209 W = 1.270 W = 50
TL210 W1 = 0.002, W2 = 0.005, Offset = 0.001 W1 = 2, W2 = 184, Offset = 55
TL211, TL225 0.172 λ, 17.67 W W = 4.674, L = 13.564 W = 184, L = 534
TL212 0.011 λ, 53.93 W W1 = 1.024, W2 = 1.024, W3 = 0.889 W1 = 40, W2 = 40, W3 = 35
TL213 W1 = 9.398, W2 = 0.889, W3 = 9.398 W1 = 370, W2 = 35, W3 = 370,
W4 = 0.889 W4 = 35
TL214 0.016 λ, 9.59 W W = 9.398, L = 1.219 W = 370, L = 48
TL215 0.032 λ, 53.93 W W = 1.024, L = 2.713 W = 40, L = 107
TL216 0.185 λ, 53.93 W W = 1.024, L = 15.491 W = 40, L = 610
TL217, TL228 0.002 λ, 35.71 W W1 = 1.905, W2 = 1.905, W3 = 0.127 W1 = 75, W2 = 75, W3 = 5
TL218 W1 = 9.398, W2 = 9.398 W1 = 370, W2 = 370
TL219 W1 = 1.024, W2 = 9.398 W1 = 40, W2 = 370
TL220, TL227 0.068 λ, 35.71 W W = 1.905, L = 5.588 W = 75, L = 220
TL221, TL222 0.016 λ, 35.71 W W1 = 1.905, W2 = 1.905, W3 = 1.270 W1 = 75, W2 = 75, W3 = 50
TL223 0.012 λ, 53.93 W W = 1.024, L = 0.991 W = 40, L = 39
TL224 0.011 λ, 9.59 W W = 9.398, L = 0.813 W = 370, L = 32
TL226 W1 = 0.002, W2 = 0.005, Offset = –0.001 W1 = 2, W2 = 184, Offset = –55
Data Sheet 8 of 11 Rev. 01, 2011-03-30
PTFB210801FA
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Circuit Assembly Information
Test Fixture Part No. LTN/PTFB210801FA
Find Gerber les for this test xture on the Inneon Web site at http://www.inneon.com/rfpower
Reference circuit assembly diagram (not to scale)
RO4350, .020 (60)
PTFB210801_IN_01 PTFB210801_OUT_01
b210801fa_cd_03-15-2011
RO4350, .020 (60)
C103
R104
S1
L1
C102 C104
C105
R103
C101
R101
S2
L2
R801 R102
S3 S5
R804
R803
R802
C802
C803 C801
+
S4
C201
C205
C206
C204
C211
C202
C212
C208 C209
C210
C203
C207
PTFB210801FA
Confidential, Limited Internal Distribution
Data Sheet 9 of 11 Rev. 01, 2011-03-30
Reference Circuit (cont.)
Components Information
Component Description Suggested Manufacturer P/N
Input
C101, C103 Capacitor, 10 μF Digi-Key 490-4393-2-ND
C102, C105 Chip capacitor, 15 pF ATC 800A150GT
C104 Chip capacitor, 1.5 pF ATC 800A1T5GR
C801, C802, C803 Capacitor, 1000 pF Digi-Key PCC1772CT-ND
L1, L2 Inductor, 22 nH Coilcraft 0805CS-220X_BG
R101, R103, R104 Resistor, 10 W Digi-Key P10GCT-ND
R102, R804 Resistor, 2000 W Digi-Key P2.0KECT-ND
R801 Resistor, 3000 W Digi-Key P3.0KECT-ND
R802 Resistor, 1300 W Digi-Key P1.3KGECT-ND
R803 Resistor, 1200 W Digi-Key P1.2KGECT-ND
S1, S2 EMI Suppression Capacitor Digi-Key NFM18PS105R0J3D
S3 Potentiometer, 2k W Digi-Key 3224W-202ECT-ND
S4 Voltage Regulator Digi-Key LM7805
S5 Transistor Digi-Key BCP56
Output
C201, C203 Capacitor, 10 μF Digi-Key 587-1818-2-ND
C202, C211 Chip capacitor, 4.71 μF ATC 490-1864-2-ND
C204, C212 Chip capacitor, 18 pF ATC 800A180JT
C205, C210 Capacitor, 22 μF Digi-Key PCE4444TR-ND
C206, C207 Chip capacitor, 2.7 pF ATC 800A2R7BT
C208 Chip capacitor, 2.2 pF ATC 800A2R2BT
C209 Chip capacitor, 15 pF ATC 800A150GT
Data Sheet 10 of 11 Rev. 01, 2011-03-30
PTFB210801FA
Confidential, Limited Internal Distribution
Package Outline Specications
Package H-37265-2
Find the latest and most complete information about products and packaging at the Inneon Internet page
http://www.inneon.com/rfpower
Diagram Notes—unless otherwise specied:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specied otherwise.
4. Pins: D = drain, S = source, G = gate.
5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
6. Exposed metal plane on top and bottom of ceramic insulator.
7. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]
3.61±.38
[.142±.015]
10.16
[.400]
S
1.02
[.040]
10.16±.25
[.400±.010]
SPH 1.57
[.062]
4X R0.63
[R.025] MAX
FLANGE
10.16
[.400]
C
L
C
L
LID
10.16±.25
[.400±.010]
15.49±.51
[.610±.020]
2.66±.51
[.105±.020]
2X 7.11
[.280]
6. ALL FOUR
CORNERS
D
G
45° X 2.03
[.080]
H- 37265 - 2_po _ 02- 18 -2010
Data Sheet 11 of 11 Rev. 01, 2011-03-30
Edition 2011-03-30
Published by
Inneon Technologies AG
81726 Munich, Germany
© 2011 Inneon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Inneon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Inneon Technologies Ofce (www.inneon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Inneon Technologies Ofce.
Inneon Technologies components may be used in life-support devices or systems only with the express written approval of
Inneon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended
to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@inneon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
PTFB210801FA V1
Condential, Limited Internal Distribution
Revision History: 2011-03-30 Data Sheet
Previous Version: none
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