1C3D20060D Rev. D
C3D20060D
Silicon Carbide Schottky Diode
Z-Rec™ RectifieR
Features
• 600-VoltSchottkyRectier
• ZeroReverseRecoveryCurrent
• ZeroForwardRecoveryVoltage
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• ExtremelyFastSwitching
• PositiveTemperatureCoefcientonVF
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies
• PowerFactorCorrection
-TypicalPFCPout:2000W-4000W
• MotorDrives
-TypicalPower:5HP-10HP
Package
TO-247-3
Maximum Ratings (TC=25˚Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
VRRM RepetitivePeakReverseVoltage 600 V
VRSM SurgePeakReverseVoltage 600 V
VDC DCBlockingVoltage 600 V
IFContinuousForwardCurrent(PerLeg/Device)
29.5/59
14/28
10/20
A
TC=25˚C
TC=135˚C
TC=152˚C
IFRM
RepetitivePeakForwardSurgeCurrent
(PerLeg/Device)
67/134
44/88 ATC=25˚C,tP=10ms,HalfSineWave,D=0.3
TC=110˚C,tP=10ms,HalfSineWave,D=0.3
IFSM
Non-RepetitivePeakForwardSurgeCurrent
(PerLeg/Device)
90/157
71/115 ATC=25˚C,tP=10ms,HalfSineWave,D=0.3
TC=110˚C,tP=10ms,HalfSineWave,D=0.3
IFSM
Non-RepetitivePeakForwardSurgeCurrent
(PerLeg/Device) 250/500 A TC=25˚C,tP=10µs,Pulse
Ptot PowerDissipation(PerLeg) 136.3
59 WTC=25˚C
TC=125˚C
TJ,Tstg OperatingJunctionandStorageTemperature -55to
+175 ˚C
TO-247MountingTorque 1
8.8
Nm
lbf-in
M3Screw
6-32Screw
Part Number Package Marking
C3D20060D TO-247-3 C3D20060
*PerLeg,**PerDevice
VRRM = 600 V
IF (TC=135˚C) =28A**
Qc  = 50nC**
2C3D20060D Rev. D
Electrical Characteristics (Per Leg)
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForwardVoltage 1.5
2.0
1.8
2.4 VIF=10ATJ=25°C
IF=10ATJ=175°C
IRReverseCurrent 10
20
50
200 μA VR = 600 V TJ=25°C
VR = 600 V TJ=175°C
QCTotalCapacitiveCharge 25 nC
VR=600V,IF=10A
di/dt=500A/μs
TJ=25°C
C TotalCapacitance
480
50
42
pF
VR=0V,TJ=25°C,f=1MHz
VR=200V,TJ=25˚C,f=1MHz
VR=400V,TJ=25˚C,f=1MHz
Note:
1. Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.
Thermal Characteristics
Symbol Parameter Typ. Unit
RθJC ThermalResistancefromJunctiontoCase 1.1**
0.55*°C/W
**PerLeg,*BothLegs
Typical Performance (Per Leg)
Figure1.ForwardCharacteristics Figure2.ReverseCharacteristics
100
90
80
70
60
50
40
30
20
10
00100200300400500600700800900
TJ =25°C
TJ =75°C
TJ =125°C
TJ =175°C
TJ =25°C
TJ =75°C
TJ =125°C
TJ =175°C
IF Forward Current (A)
VF Forward Voltage (V)
20
18
16
14
12
10
8
6
4
2
00.00.51.01.52.02.53.03.54.0
VR Reverse Voltage (V)
IR Reverse Voltage (μA)
3C3D20060D Rev. D
0
10
20
30
40
50
60
70
25
50
75
100
125
150
175
Figure4.Capacitancevs.ReverseVoltage
0
50
100
150
200
250
300
350
400
1 10 100 1000
VR Reverse Voltage (V)
C Capacitance (pF)
Figure3.CurrentDerating
Figure5.TransientThermalImpedance
20%Duty*
30%Duty*
50%Duty*
70%Duty*
DC
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.E-07 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Time (s)
Zth (°C/W)
1E1
1E0
1E-1
1E-21E-51E-41E-31E-21E-11E01E1
400
350
300
250
200
150
100
50
0
1 101001000
C Capacitance (pF)
V
R
Reverse Voltage (V)
Typical Performance (Per Leg)
IF (A)
TC ˚C
4C3D20060D Rev. D
Typical Performance (Per Leg)
140
120
100
80
60
40
20
0
Power Dissipation (W)
T
C
Case Temperature (
°
C
)
255075100125150175
Figure6.PowerDerating
0.000
20.000
40.000
60.000
80.000
100.000
120.000
140.000
25 50 75 100 125 150 175
Diode Model (Per Leg)
VT
Diode Model CSD10060
Vf T = VT + If*RT
VT= 0.92 + (Tj * -1.35*10-3)
RT= 0.052 + (Tj * 0.29*10-3)
Note: Tj = Diode Junction Temperature In Degrees Celsius
VfT = VT+If*RT
VT =0.98+(TJ*-1.6*10-3)
RT =0.04+(TJ*0.522*10-3)
5C3D20060D Rev. D
Part Number Package Marking
C3D20060D TO-247-3 C3D20060
Recommended Solder Pad Layout
Package Dimensions
PackageTO-247-3 POS Inches Millimeters
Min Max Min Max
A.605 .635 15.367 16.130
B .800 .831 20.320 21.10
C .780 .800 19.810 20.320
D .095 .133 2.413 3.380
E.046 .052 1.168 1.321
F.060 .095 1.524 2.410
G.215TYP 5.460TYP
H.175 .205 4.450 5.210
J.075 .085 1.910 2.160
K6˚ 21˚ 6˚ 21˚
L 4˚ 6˚ 4˚ 6˚
M 2˚ 4˚ 2˚ 4˚
N 2˚ 4˚ 2˚ 4˚
P .090 .100 2.286 2.540
Q .020 .030 .508 .762
R9˚ 11˚ 9˚ 11˚
S9˚ 11˚ 9˚ 11˚
T2˚ 8˚ 2˚ 8˚
U 2˚ 8˚ 2˚ 8˚
V.137 .144 3.487 3.658
W .210 .248 5.334 6.300
X.502 .557 12.751 14.150
Y .637 .695 16.180 17.653
Z.038 .052 0.964 1.321
AA .110 .140 2.794 3.556
BB .030 .046 0.766 1.168
CC .161 .176 4.100 4.472
W
X
Y
Z
AA
BB
CC
TO-247-3
Note: Recommended soldering proles can be found in the applications note here:
http://www.cree.com/~/media/Files/Cree/Power/Application%20Notes/CPWRAN04A.pdf
66 C3D20060D Rev. D
Copyright © 2013 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacdebrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrol
systems,airtrafccontrolsystems,orweaponssystems.
Notes