Phototransistors PNA1605F (PN116) Silicon NPN Phototransistor Unit : mm Wide directional sensitivity, matched to GaAs LEDs : = 70 deg. (typ.) 12.5 min. 10 min. Fast response : tr, tf = 8 s (typ.) 3.90.25 (2.4) Features High sensitivity Side-view type package 2.10.15 1.60.15 0.80.1 Not soldered 2.0 1.50.2 For optical control systems 4.50.15 3.50.15 3-0.450.2 0.450.2 1.27 1.27 Absolute Maximum Ratings (Ta = 25C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Collector to base voltage VCBO 30 V Emitter to collector voltage VECO 5 V Emitter to base voltage VEBO 5 V IC 10 mA Collector current Collector power dissipation PC 100 mW Operating ambient temperature Topr -25 to +85 C Storage temperature Tstg -30 to +100 C 1 2 3 1: Emitter 2: Collector 3: Base Photodetectors Electro-Optical Characteristics (Ta = 25C) Parameter Symbol Dark current ICEO Collector photo current Peak sensitivity wavelength Acceptance half angle *2 min VCE = 10V, L = 100 lx*1 0.2 typ max Unit 0.05 2 A 0.8 mA P VCE = 10V 900 nm Measured from the optical axis to the half power point 70 deg. Rise time tr*2 VCC = 10V, ICE(L) = 1mA 8 s Fall time tf*2 RL = 100 Collector saturation voltage *1 ICE(L) Conditions VCE = 10V VCE(sat) s 9 ICE(L) = 1mA, L = 1000 lx*1 0.3 0.6 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT RL ;;;; ;; 50 (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Note) The part number in the parenthesis shows conventional part number. 1 Phototransistors PNA1605F ICE(L) -- VCE 10 80 60 40 20 Ta = 25C T = 2856K 900 lx 800 lx 8 700 lx 600 lx 6 500 lx 4 VCE = 10V Ta = 25C T = 2856K 10 3 Collector photo current ICE(L) (mA) 100 Collector photo current Collector power dissipation PC (mW) L =1000 lx ICE(L) -- L ICE(L) (mA) PC -- Ta 120 400 lx 300 lx 2 200 lx 10 2 10 1 10 -1 100 lx 20 40 60 Ambient temperature 80 0 100 Ta (C ) 0 4 8 12 ICEO -- Ta 10 -1 10 -2 10 -3 40 60 Ambient temperature 80 S (%) 1 10 Ta (C ) 40 80 60 40 400 600 800 1000 1200 Wavelength (nm) Ta (C ) tf -- ICE(L) VCC = 10V Ta = 25C 10 3 50 10 2 60 70 80 90 10 2 RL = 1k 500 10 100 1 10 -1 RL = 1k 500 10 100 1 10 -1 10 -2 10 -2 10 -1 1 Collector photo current 2 80 0 200 120 VCC = 10V Ta = 25C 10 3 tr (s) 20 VCE = 10V Ta = 25C tr -- ICE(L) 30 Rise time 40 Relative sensitivity S (%) 60 0 Ambient temperature 40 100 80 20 10 4 20 Directivity characteristics 0 10 3 L (lx) Spectral sensitivity characteristics 100 10 10 -1 - 40 100 10 2 10 Illuminance Relative sensitivity ICE(L) (mA) 1 Collector photo current Dark current ICEO (A) 10 1 VCE (V) VCE = 10V L = 100 lx T = 2856K VCE = 10V 20 10 -2 24 ICE(L) -- Ta 10 2 0 20 Collector to emitter voltage 10 2 10 -4 - 20 16 tf (s) 0 Fall time 0 - 20 10 10 2 ICE(L) (mA) 10 -2 10 -2 10 -1 1 Collector photo current 10 10 2 ICE(L) (mA) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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