CCD area image sensors
Front-illuminated FFT-CCDs for X-ray imaging
S8980 S10810-11
www.hamamatsu.com 1
X-ray monitoring photodiode incorporated
Resolution: 20 Lp/mm
1500 (H) × 1000 (V) pixel format
Pixel size: 20 × 20 μm
Coupled with FOS for X-ray imaging
100% fi ll factor
Low dark signal
Low readout noise
MPP operation
AC/DC X-ray source adapted
Compact size
High dynamic range: 12-bit
Long-term stability
Structure
Parameter S8980 S10810-11
CCD structure Full frame transfer
Fill factor 100%
Cooling Non-cooled
Number of pixels 1508 (H) × 1002 (V)
Number of active pixels 1500 (H) × 1000 (V)
Pixel size 20 (H) × 20 (V) m
Active area 30 (H) × 20 (V) mm
Vertical clock phase 2 phases
Horizontal clock phase 2 phases
Output circuit Emitter follower without load resistor
Dimensions 35.5 (H) × 23.2 (V) mm 41.0 (H) × 26.4 (V) mm
Window FOS (scintillator on 1.5 mm FOP)
These products are components for incorporation into medi-
cal device.
The S8980 is an FFT-CCD image sensor suitable for intra-oral X-ray imaging in dental diagnosis. The S8980 has 1.5 mega
(1500 × 1000) pixels, each of which is 20 × 20 m in size. The FOP (fi ber optic plate) used as an input window is as thin as 1.5
mm, making high resolution as well as highly resistant to X-ray irradiation. The scintillator coated on the FOP is optimized to
have high X-ray sensitivity and high resolution (20 Lp/mm).
The S10810-11 is an easy-to-use X-ray imaging module using the S8980, with added functions such as a cable assembly
and X-ray trigger circuit.
Features Applications
Intra-oral X-ray imaging in dental diagnosis
General X-ray imaging
Non-destructive inspection
CCD area image sensors S8980, S10810-11
2
Absolute maximum ratings (Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Storage temperature Tstg -20 - +70 °C
Operating temperature Topr 0 - +40 °C
Total dose irradiation D- -50Gy
OD voltage VOD -0.5 - +20 V
RD voltage VRD -0.5 - +18 V
SG voltage VSG -15 - +15 V
OG voltage VOG -15 - +15 V
RG voltage VRG -15 - +15 V
TG voltage VTG -15 - +15 V
Vertical clock voltage VP1V, VP2V -15 - +15 V
Horizontal clock voltage VP1H, VP2H -15 - +15 V
Vcc voltage Vcc 0 - +7 V
Operating conditions (MPP mode, Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Output transistor drain voltage VOD 12 15 - V
Reset drain voltage VRD 12 13 14 V
Output gate voltage VOG -0.5 2 5 V
Substrate voltage Vss - 0 - V
Vertical shift register
clock voltage
High VP1VH, VP2VH 036V
Low VP1VL, VP2VL -9 -8 -7 V
Horizontal shift register
clock voltage
High VP1HH, VP2HH 036V
Low VP1HL, VP2HL -9 -8 -7 V
Summing gate voltage High VsGH 036V
Low VsGL -9 -8 -7 V
Reset gate voltage High VRGH 036V
Low VRGL -9 -8 -7 V
Transfer gate voltage High VTGH 036V
Low VTGL -9 -8 -7 V
+5 V power supply voltage Vcc 4.75 5 5.25 V
Electrical characteristics (Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Signal output frequency*1fc-1-MHz
Vertical shift register capacitance CP1v, CP2v- 60000 - pF
Horizontal shift register
capacitance
S8980 CP1H, CP2H - 350 - pF
S10810-11 - 550 -
Summing gate capacitance S8980 CsG-20-
pF
S10810-11 - 220 -
Reset gate capacitance S8980 CRG -20-
pF
S10810-11 - 220 -
Transfer gate capacitance S8980 CTG - 250 - pF
S10810-11 - 450 -
Charge transfer effi ciency*2CTE 0.99995 0.99998 - -
DC output level*3VOut 5 8 11 V
Output impedance*3Zo - 500 - Ω
Power dissipation*3 *4P - 75 - mW
+5 V power supply current S8980 Icc -1-
mA
S10810-11 - 2 -
*1: In case the of the S8980, maximum frequency strongly depends on a peripheral circuit and cable length.
*2: Measured at half of the full well capacity. CTE is defi ned per pixel.
*3: VOD=15 V
*4: Power dissipation of the on-chip amplifi er
CCD area image sensors S8980, S10810-11
3
Electrical and optical characteristics (Ta=25 °C, VOD=15 V, unless otherwise noted)
Parameter Symbol Min. Typ. Max. Unit
Full well capacity
Vertical
Fw
100 200 -
ke-
Horizontal - 300 -
Summing - 600 -
CCD node sensitivity*5Sv 1.0 1.4 - V/e-
Dark current (MPP mode)*6DS - 250 2500 e-/pixel/s
Readout noise*7Ta=25 °C Nr -90-
e- rms
Ta=-40 °C -60-
Dynamic range*8DR - 3333 - -
X-ray response non-uniformity*9 *10 XRNU - ±10 ±30 %
Blemish*11
Point
defects*12
White spots
-
--20
-
Black spots - - 20
Cluster defects*13 --3
Column defects*14 --1
X-ray resolution*9ΔR15 20 - Lp/mm
*5: VOD=15 V, RL (load resistor of emitter follower)=1 kΩ
*6: Dark signal doubles for every 5 to 7 °C.
*7: Operating frequency is 1 MHz.
*8: Dynamic range = Full well capacity / Readout noise
*9: X-ray irradiation of 60 kVp, measured at half of the full well capacity
*10: XRNU (%) = Noise / Signal × 100
Noise: Fixed pattern noise (peak to peak)
In the range that excludes 5 pixels from edges to the center at every position
*11: Refer to “Characteristics and use of FFT-CCD area image sensor” of technical information.
*12: White spots > 10 times of Max. Dark signal (2500 e-/pixel/s)
Black spots > 50% reduction in response relative to adjacent pixels, measured at half of the full well capacity
*13: Continuous 2 to 9 point defects
*14: Continuous 10 point defects
Resolution (S10810-11) Response (S10810-11)
Spatial frequency (line pairs/mm)
(X-ray source: 70 kVp, Filter: ABS 1.5 mmt)
CTF
0
0.1
1.0
0.8
0.9
0.6
0.7
0.4
0.5
0.2
0.3
20042810612141618
Absorbed dose (µGy)
(X-ray source: 70 kVp, Filter: ABS 1.5 mmt)
Output voltage (mV)
0
300
200
100
3000 100 200
KMPDB0355EA KMPDB0356EA
CCD area image sensors S8980, S10810-11
4
Pixel format
Left ← Horizontal direction → Right
Blank Optical
black Isolation Effective Isolation Optical
black Blank
2 2 1 1500 1 0 2
Top ← Vertical direction → Bottom
Isolation Effective Isolation
1 1000 1
KMPDC0163EA
Device structure
......
......
1
VS1 VS2 VS3 VS4
VS999
VS1000
VS1001
VS1002
2
3
1496
1497
1498
1499
1500
23
999998
1000
D1
D2
S1
S2
S3
S4
S5
S6
S1499
S1500
S1501
S1502
S1503
S1504
D3
D4
......
X-ray irradiation
monitoring photodiode
PD
P1V’
P2V’
TG’
SS
RG’
OG
SG’
P1H’
P2H’
OS
OD
RD
CCD area image sensors S8980, S10810-11
5
P1V
OD
RD
Vcc
P2V
TG
P1H
P2H
SG
RG
P1V’
51 k 2.2 µ
2.2 µ
7.5 k
10 k
Molex 52745-1497
0.1 µ
P2V’
TG’
P1H’
SS
CCD chip
OD OG
RD
OS
PD
100
10
10
10
10
10
10
P2H’
SG’
RG’
Vcc 1
2
3
4
5
6
7
8
9
10
11
12
13
14
Trigger A
SG
P2H
P1H
Reserve
RG
RD
OD
OUT
GND
TG
P2V
P1V
OUT
Trigger A
Trigger B
(S8980)
(S10810-11)
GND
On-board circuit
KMPDC0348EB
CCD area image sensors S8980, S10810-11
6
Parameter Symbol Min. Typ. Max. Unit
P1V, P2V, TG Pulse width*15 tpwv 30 60 - s
Rise and fall times tprv, tpfv 200 - - ns
P1H, P2H
Pulse width tpwh 100 500 - ns
Rise and fall times*15 tprh, tpfh 5 - - ns
Duty ratio - - 50 - %
SG
Pulse width tpws 100 500 - ns
Rise and fall times tprs, tpfs 3 - - ns
Duty ratio - - 50 - %
RG Pulse width tpwr 10 50 - ns
Rise and fall times tprr, tpfr 3 - - ns
TG-P1H Overlap time tovr 18 36 - s
*15: The clock pulses should be overlapped at 50% of maximum amplitude.
Timing chart
KMPDC03
P1V
P2V, TG*3
P1H
P2H, SG
RG
OUT
*1: Trigger A (S8980) is the same as AC/DC X-ray exposure form.
*2: Low active trigger pulse
*3: TG terminal can be short-circuited to P2V terminal.
P2V, TG
P1H
P2H, SG
RG
OUT
Tpwv
1VD1
2, 3, ... , 999, 1000, VD2
VD: Vertical dummy
Enlarged view
Tovr
Tpwh, Tpws
Tpwr
D1 D2 S1
S2, S3, S4, ... , S1502, S1503, S1504
D3 D4
AC X-ray exposure
(Trigger A)*1
Trigger B (S10810-11)*2
DC X-ray exposure
(Trigger A)*1
Pre-integration period Integration period Readout period
KMPDC0349EB
CCD area image sensors S8980, S10810-11
* The shield of cable and the shroud of MDR connector are short-circuited.
Take due care of EMC and ESD when connected to 0 V reference and the ground.
7
2000
Cable
MDR connector
(3M 10136-3000PE; 36 terminals)
Ferrite
CCD sensor
Pin no.
1 2 17 18
19 20 35 36
Shroud
KMPDA0244EA
KMPDA0169EE
Entire view
Dimensional outlines (unit: mm)
S8980
S10810-11
19.5
6.55
FOS
1.7
2.0
3.1
1.0
1.5
30
Active area
3.6
20
23.2
35.5
Molex
52745-1497
1 → 14
Scintillator
Connector
FOP Alumina substrate
CCD chip
CCD area image sensors S8980, S10810-11
CCD sensor
Pin connections
S8980
Pin no. Symbol Description Remark
1 Vcc Analog power +5 V
2 Trigger A Trigger A output
3 SG Summing gate
4 P2H CCD horizontal register clock-2
5 P1H CCD horizontal register clock-1
6 Reserve Should be opened
7 RG Reset gate
8 RD Reset drain
9 OD Output transistor drain
10 OUT Signal output
11 GND Ground
12 TG Transfer gate
13 P2V CCD vertical register clock-2
14 P1V CCD vertical register clock-1
8
26.4
Cable
3.5
9.4
5.3
41.0
306.85
20
Active area
KMPDA0245EB
CCD area image sensors S8980, S10810-11
9
Pin no. Symbol Description Remark
1 GND Ground
2 Vcc +5 V power supply
3 SG Summing gate Same timing as P2H
4 Trigger B Trigger B output
5 RG Reset gate
6NC
7 Reserve Should be opened
8NC
9 RD Reset drain
10 NC
11 OD Output transistor drain
12 NC
13 OUT Sensor output
14 NC
15 GND Ground
16 NC
17 P1V CCD vertical register clock-1
18 Reserve Should be opened
19 Reserve Should be opened
20 P2H CCD horizontal register clock-2
21 NC
22 P1H CCD horizontal register clock-1
23 NC
24 GND Ground
25 NC
26 RD Reset drain
27 NC
28 OD Output transistor drain
29 NC
30 GND Ground
31 NC
32 OUT Sensor output
33 NC
34 P2V CCD vertical register clock-2
35 NC
36 TG Transfer gate Same timing as P2V
S10810-11
CCD area image sensors S8980, S10810-11
Cat. No. KMPD1123E05 Jun. 2013 DN
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
Information described in this material is current as of June, 2013.
10
· Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an
earth ring, in order to prevent electrostatic damage due to electrical charges from friction.
· Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
· Provide ground lines or ground connection with the work-fl oor, work-desk and work-bench to allow static electricity to discharge.
· Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount
of damage that occurs.
Precautions
Electrostatic countermeasures
· This product is warranted for a period of 12 months after the date of the shipment.
The warranty is limited to replacement or repair of any defective product due to defects in workmanship or materials used in
manufacture. The warranty does not cover loss or damage caused by natural disaster, misuse (including modifi cations and any use
not complying with the environment, application, usage and storage conditions described in this datasheet), or total radiation dose
over 50 Gy (incident X-ray energy: 70 kVp) even within the warranty period.
Notice
