Thyristor Modules Thyristor/Diode Modules ITRMS ITAVM VRRM PSKT 56 PSKH 56 = 2 x 100 A = 2 x 64 A = 800-1800 V Preliminary Data Sheet TO-240 AA 1 VRSM VDSM VRRM VDRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Version 1 PSKT PSKT PSKT PSKT PSKT 56/08io1 56/12io1 56/14io1 56/16io1 56/18io1 PSKH 56/08io1 PSKH 56/12io1 -PSKH 56/16io1 -- ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 83C; 180 sine TC = 85C; 180 sine ITSM, IFSM TVJ = 45C; VR = 0 PSKT PSKT PSKT PSKT PSKT 56/08io8 56/12io8 56/14io8 56/16io8 56/18io8 PSKH 56/08io8 PSKH 56/12io8 PSKH 56/14io8 PSKH 56/16io8 PSKH 56/18io8 7 4 5 100 64 60 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1500 1600 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1350 1450 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 11 200 10 750 A 2s A 2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 9100 8830 A 2s A 2s 150 A/s 500 A/s 1000 V/s TVJ = TVJM repetitive, IT = 150 A f =50 Hz, tP =200 s VD = 2/3 VDRM IG = 0.45 A non repetitive, IT = ITAVM diG/dt = 0.45 A/s TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) PGM TVJ = TVJM IT = ITAVM tP = 30 s tP = 300 s PGAV W W W VRGM 10 V TVJ TVJM Tstg -40...+125 125 -40...+125 C C C 3000 3600 V~ V~ 50/60 Hz, RMS IISOL 1 mA Md Mounting torque (M5) Terminal connection torque (M5) t = 1 min t=1s 5 4 2 3 1 5 42 3 6 1 5 2 3 1 5 2 PSKH Version 1 PSKT Version 8 PSKH Version 8 2.5-4.0/22-35 Nm/lb.in. 2.5-4.0/22-35 Nm/lb.in. 90 g DC motor control Softstart AC motor controller Light, heat and temperature control Advantages Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. International standard package, JEDEC TO-240 AA Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 Gate-cathode twin pins for version 1 Applications Typical including screws 6 7 1 Features 10 5 0.5 VISOL 3 PSKT Version 1 Maximum Ratings (dv/dt)cr Weight 6 Version 8 Test Conditions (di/dt)cr 3 Type Symbol i2dt 2 Space and weight savings Simple mounting with two screws Improved temperature and power cycling capability Reduced protection circuits 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/ Symbol Test Conditions IRRM, IDRM TVJ = TVJM; VR = VRRM; VD = VDRM VT, VF IT, IF = 200 A; TVJ = 25C 1.57 V VT0 rT For power-loss calculations only (TVJ = 125C) 0.85 3.7 V m VGT VD = 6 V; 1.5 1.6 100 200 V V mA mA IGT VD = 6 V; Characteristic Values TVJ TVJ TVJ TVJ = = = = 5 25C -40C 25C -40C TVJ = TVJM; VD = 2/3 VDRM 0.2 10 V mA IL TVJ = 25C; tP = 10 s; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/s 450 mA IH TVJ = 25C; VD = 6 V; RGK = 200 mA tgd TVJ = 25C; VD = 1/2 VDRM IG = 0.45 A; diG/dt = 0.45 A/s 2 s tq TVJ = TVJM; IT = 150 A, tP = 200 s; -di/dt = 10 A/s VR = 100 V; dv/dt = 20 V/s; VD = 2/3 VDRM 150 s QS IRM TVJ = TVJM; IT, IF = 50 A, -di/dt = 3 A/s 100 24 C A RthJC per per per per 0.45 0.225 0.65 0.325 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s 2 dS dA a 1: IGT, TVJ = 125C mA VGD IGD RthJK 10 V 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C VG 2 1 3 1 5 6 4 4: PGAV = 0.5 W 5: PGM = IGD, TVJ = 125C 0.1 100 101 5W 6: PGM = 10 W 102 mA 104 103 IG Fig. 1 Gate trigger characteristics thyristor/diode; DC current module thyristor/diode; DC current module other values see Fig. 8/9 Creepage distance on surface Strike distance through air Maximum allowable acceleration typ. 1000 TVJ = 25C s tgd 100 typ. Limit 10 1 10 100 mA IG Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") PSKT/PSKH Version 1 PSKT Version 8 PSKH Version 8 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/ 1000 Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 i2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Circuit B6 3 x PSKT 56 or 3 x PSKH 56 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/ Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Circuit W3 3 x PSKT 56 or 3 x PSKH 56 Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) PSKT 56 PSKH 56 Z thJC(t) RthJC for various conduction angles d: d RthJC (K/W) DC 180 120 60 30 0.45 0.47 0.49 0.505 0.52 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) ti (s) 0.014 0.026 0.41 0.015 0.0095 0.175 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) PSKT 56 PSKH 56 ZthJK(t) RthJK for various conduction angles d: d DC 180 120 60 30 RthJK (K/W) 0.65 0.67 0.69 0.705 0.72 Constants for ZthJK calculation: i 1 2 3 4 POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Rthi (K/W) ti (s) 0.014 0.026 0.41 0.2 0.015 0.0095 0.175 0.67 2003 POWERSEM reserves the right to change limits, test conditions and dimensions http://store.iiic.cc/