POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Preliminary Data Sheet
Thyristor Modules
Thyristor/Diode Modules
ITRMS = 2 x 100 A
ITAVM = 2 x 64 A
VRRM = 800-1800 V
Features
●International standard package,
JEDEC TO-240 AA
●Direct copper bonded Al2O3 -ceramic
base plate
●Planar passivated chips
●Isolation voltage 3600 V~
●UL registered, E 148688
●Gate-cathode twin pins for version 1
Applications
●DC motor control
●Softstart AC motor controller
●Light, heat and temperature control
Advantages
●Space and weight savings
●Simple mounting with two screws
●Improved temperature and power
cycling capability
●Reduced protection circuits
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
PSKT 56
PSKH 56
VRSM VRRM Type
VDSM VDRM
V V Version 1 Version 8
900 800 PSKT 56/08io1 PSKH 56/08io1 PSKT 56/08io8 PSKH 56/08io8
1300 1200 PSKT 56/12io1 PSKH 56/12io1 PSKT 56/12io8 PSKH 56/12io8
1500 1400 PSKT 56/14io1 -- PSKT 56/14io8 PSKH 56/14io8
1700 1600 PSKT 56/16io1 PSKH 56/16io1 PSKT 56/16io8 PSKH 56/16io8
1900 1800 PSKT 56/18io1 -- PSKT 56/18io8 PSKH 56/18io8
PSKH
Version 8
PSKT
Version 8
PSKT
Version 1
3671 542
361 52
3152
31542
PSKH
Version 1
Symbol Test Conditions Maximum Ratings
ITRMS, IFRMS TVJ = TVJM 100 A
ITAVM, IFAVM TC = 83°C; 180° sine 64 A
TC = 85°C; 180° sine 60 A
ITSM, IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 1500 A
VR = 0 t = 8.3 ms (60 Hz), sine 1600 A
TVJ = TVJM t = 10 ms (50 Hz), sine 1350 A
VR = 0 t = 8.3 ms (60 Hz), sine 1450 A
∫∫
∫∫
∫i2dt TVJ = 45°C t = 10 ms (50 Hz), sine 11 200 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 10 750 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 9100 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 8830 A2s
(di/dt)cr TVJ = TVJM repetitive, IT = 150 A 150 A/µs
f =50 Hz, tP =200 µs
VD = 2/3 VDRM
IG = 0.45 A non repetitive, IT = ITAVM 500 A/µs
diG/dt = 0.45 A/µs
(dv/dt)cr TVJ = TVJM;V
DR = 2/3 VDRM 1000 V/µs
RGK = ∞; method 1 (linear voltage rise)
PGM TVJ = TVJM tP = 30 µs 10 W
IT = ITAVM tP = 300 µs 5 W
PGAV 0.5 W
VRGM 10 V
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL ≤ 1 mA t = 1 s 3600 V~
MdMounting torque (M5) 2.5-4.0/22-35 Nm/lb.in.
Terminal connection torque (M5) 2.5-4.0/22-35 Nm/lb.in.
Weight Typical including screws 90 g
6745
3
2
1
TO-240 AA
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POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Symbol Test Conditions Characteristic Values
IRRM, IDRM TVJ = TVJM; VR = VRRM; VD = VDRM 5mA
VT, VFIT, IF = 200 A; TVJ = 25°C 1.57 V
VT0 For power-loss calculations only (TVJ = 125°C) 0.85 V
rT3.7 m Ω
VGT VD = 6 V; TVJ = 25°C 1.5 V
TVJ = -40°C 1.6 V
IGT VD = 6 V; TVJ = 25°C 100 mA
TVJ = -40°C 200 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM 0.2 V
IGD 10 mA
ILTVJ = 25°C; tP = 10 µs; VD = 6 V 450 mA
IG = 0.45 A; diG/dt = 0.45 A/µs
IHTVJ = 25°C; VD = 6 V; RGK = ∞200 mA
tgd TVJ = 25°C; VD = 1/2 VDRM 2µs
IG = 0.45 A; diG/dt = 0.45 A/µs
tqTVJ = TVJM; IT = 150 A, tP = 200 µs; -di/dt = 10 A/µs typ. 150 µ s
VR = 100 V; dv/dt = 20 V/µs; VD = 2/3 VDRM
QSTVJ = TVJM; IT, IF = 50 A, -di/dt = 3 A/µs 100 µC
IRM 24 A
RthJC per thyristor/diode; DC current 0.45 K/W
per module other values 0.225 K/W
RthJK per thyristor/diode; DC current see Fig. 8/9 0.65 K/W
per module 0.325 K/W
dSCreepage distance on surface 12.7 m m
dAStrike distance through air 9.6 m m
aMaximum allowable acceleration 50 m/s2
Dimensions in mm (1 mm = 0.0394")
PSKT/PSKH Version 1 PSKT Version 8 PSKH Version 8
10 100 1000
1
10
100
1000
100101102103104
0.1
1
10
IG
VG
mA
mA
IG
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
µs
tgd
V
4: PGAV = 0.5 W
5: PGM = 5 W
6: PGM = 10 W
IGD, TVJ = 125°C
3
4
2
1
56
Limit
typ.
TVJ = 25°C
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
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POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Fig. 3 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 4 ∫i2dt versus time (1-10 ms) Fig. 4a Maximum forward current
at case temperature
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Circuit
B6
3 x PSKT 56 or
3 x PSKH 56
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2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
RthJC for various conduction angles d:
dR
thJC (K/W)
DC 0.45
180° 0.47
120° 0.49
60° 0.505
30° 0.52
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.014 0.015
2 0.026 0.0095
3 0.41 0.175
RthJK for various conduction angles d:
d RthJK (K/W)
DC 0.65
180° 0.67
120° 0.69
60° 0.705
30° 0.72
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.014 0.015
2 0.026 0.0095
3 0.41 0.175
4 0.2 0.67
Circuit
W 3
3 x PSKT 56 or
3 x PSKH 56
PSKT 56
PSKH 56
ZthJC(t)
PSKT 56
PSKH 56
ZthJK(t)
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