AO6802
Symbol Min Typ Max Units
BVDSS 30 V
1
TJ=55°C 5
IGSS 100 nA
VGS(th) 1 1.9 3 V
ID(ON) 12 A
54 75
TJ=125°C 78
88 115 m
gFS 4.5 S
VSD 0.79 1 V
IS2.5 A
Ciss 200 240 pF
Coss 40 pF
Crss 20 pF
Rg2.3 3 Ω
Qg(10V) 6.5 8.5 nC
Qg(4.5V) 3.1 4 nC
Qgs 1.2 nC
Qgd 1.6 nC
tD(on) 3.3 ns
tr2.5 ns
tD(off) 13.2 ns
tf1.7 ns
trr 9.4 12 ns
Qrr 3.5 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-Off DelayTime
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Gate Drain Charge
DYNAMIC PARAMETERS
VGS=10V, VDS=15V, ID=3.1A
VGS=10V, VDS=15V, RL=4.7Ω,
RGEN=3Ω
Gate Source Charge
Turn-On DelayTime
Turn-On Rise Time
Gate resistance
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Total Gate Charge
VGS=0V, VDS=0V, f=1MHz
Reverse Transfer Capacitance
mΩ
VGS=4.5V, ID=2A
IS=1A
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
N-Channel Electrical Characteristics (T
J=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
IDSS µA
Gate Threshold Voltage VDS=VGS ID=250µA
VDS=24V, VGS=0V
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VDS=5V, ID=3.1A
VGS=10V, VDS=5V
VGS=10V, ID=3.1A
VDS=0V, VGS=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Body Diode Reverse Recovery Charge IF=3.1A, dI/dt=100A/µs
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=3.1A, dI/dt=100A/µs
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Rev 1 : June 2005
Alpha and Omega Semiconductor, Ltd.