AUTOMOTIVE GRADE Features Advanced Process Technology Low On-Resistance Logic Level Gate Drive P Channel MOSFET Dynamic dv/dt Rating 150C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified * AUIRF7416Q 1 8 S 2 7 S 3 6 D G 4 5 D Package Type AUIRF7416Q SO-8 VDSS -30V RDS(on) max. 0.02 ID -10A D Top View Description Specifically designed for Automotive applications, this cellular design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number A D S SO-8 AUIRF7416Q G Gate Standard Pack Form Quantity Tape and Reel 4000 D Drain S Source Orderable Part Number AUIRF7416QTR Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. ID @ TA = 25C Continuous Drain Current, VGS @ -10V -10 ID @ TA = 70C IDM PD @TA = 25C Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation -7.1 -45 2.5 VGS EAS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Thermal Resistance Symbol RJA Parameter Junction-to-Ambient Units A W 0.02 20 370 -5.0 -55 to + 150 mW/C V mJ V/ns C Typ. Max. Units --- 50 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-9-30 AUIRF7416Q Static @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions -30 --- --- V VGS = 0V, ID = -250A --- -0.024 --- V/C Reference to 25C, ID = -1mA --- --- 0.020 VGS = -10V, ID = -5.6A --- --- 0.035 VGS = -4.5V, ID = -2.8A -1.0 --- -2.04 V VDS = VGS, ID = -250A 5.6 --- --- S VDS = -10V, ID = -2.8A --- --- -1.0 VDS = -24V, VGS = 0V A --- --- -25 VDS = -24V,VGS = 0V,TJ = 125C --- --- -100 VGS = -20V nA --- --- 100 VGS = 20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Total Gate Charge Qg Qgs Gate-to-Source Charge Qgd Gate-to-Drain Charge td(on) Turn-On Delay Time Rise Time tr td(off) Turn-Off Delay Time Fall Time tf Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge --- --- --- --- --- --- --- --- --- --- 61 8.0 22 18 49 59 60 1700 890 410 92 12 32 --- --- --- --- --- --- --- Min. Typ. Max. Units --- --- -3.1 --- --- -45 --- --- --- --- 56 99 -1.0 85 150 ID = -5.6A nC VDS = -24V VGS = -10V, See Fig.6 & 9 VDD = -15V ID = -5.6A ns RG = 6.2 RD = 2.7See Fig.10 VGS = 0V pF VDS = -25V = 1.0MHz, See Fig.5 Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = -5.6A,VGS = 0V ns TJ = 25C ,IF = -5.6A, nC di/dt = 100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) Starting TJ = 25C, L = 25mH, RG = 25, IAS = -5.6A. (See Fig. 12) ISD -5.6A, di/dt 100A/s, VDD V(BR)DSS, TJ 150C. Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board , t 10sec. 2 2015-9-30 AUIRF7416Q 100 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP TOP 10 -3.0V 20s PULSE WIDTH TJ = 25C A 1 0.1 1 10 -3.0V 20s PULSE WIDTH TJ = 150C A 1 0.1 10 1 -VDS , Drain-to-Source Voltage (V) Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) 100 TJ = 25C TJ = 150C 10 VDS = -10V 20s PULSE WIDTH 1 3.0 3.5 4.0 4.5 5.0 5.5 -VGS , Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 10 -VDS , Drain-to-Source Voltage (V) A I D = -5.6A 1.5 1.0 0.5 VGS = -10V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TJ , Junction Temperature (C) Fig. 4 Normalized On-Resistance Vs. Temperature 2015-9-30 AUIRF7416Q 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = Cds + C gd -V GS , Gate-to-Source Voltage (V) C, Capacitance (pF) 4000 3000 Ciss Coss 2000 1000 Crss I D = -5.6A VDS = -24V VDS = -15V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 9 0 0 1 10 100 0 A 20 60 80 A 100 Q G , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -II D , Drain Current (A) -ISD , Reverse Drain Current (A) 40 TJ = 150C 10 TJ = 25C 100us 10 1ms 10ms TA = 25 C TJ = 150 C Single Pulse 1 0.1 VGS = 0V 1 0.4 0.6 0.8 1.0 A 1 10 100 -VDS , Drain-to-Source Voltage (V) 1.2 -VSD , Source-to-Drain Voltage (V) Fig. 7 Typical Source-Drain Diode Forward Voltage 4 Fig 8. Maximum Safe Operating Area 2015-9-30 AUIRF7416Q Fig 10a. Switching Time Test Circuit Fig 9a. Gate Charge Waveform Fig 10b. Switching Time Waveforms Fig 9b. Gate Charge Test Circuit Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 PDM 0.02 1 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 2015-9-30 AUIRF7416Q EAS , Single Pulse Avalanche Energy (mJ) 1000 Fig 12a. Unclamped Inductive Test Circuit TOP 800 BOTTOM ID -2.5A -4.5A -5.6A 600 400 200 0 25 50 75 100 125 150 o Starting T J, Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms 6 2015-9-30 AUIRF7416Q Fig 13. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET(R) Power MOSFETs 7 2015-9-30 AUIRF7416Q SO-8 Package Outline (Dimensions are shown in millimeters (inches) D D IM B 8 6 7 6 M IN A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 B ASIC 1.27 B ASIC e1 5 H E 1 6X 2 3 0.25 [ .010] 4 A e e1 0.25 [ .010] A1 C A M AX .025 B ASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 A C 8X b M ILLIM ETERS M AX 5 A IN C H ES M IN y 0.10 [ .004] B 8X L F O O T P R IN T N O TE S : 1. D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 . 2. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R 3. D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] . 4. O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .1 5 [ . 0 0 6 ] . 6 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 [ . 0 1 0 ] . 7 D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S TR A TE . 8X c 7 8 X 0 .7 2 [ .0 2 8 ] 6 .4 6 [ .2 5 5 ] 3 X 1 .2 7 [ .0 5 0 ] 8 X 1 .7 8 [ .0 7 0 ] SO-8 Part Marking Information 8 2015-9-30 AUIRF7416Q SO-8 Tape and Reel (Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 9 2015-9-30 AUIRF7416Q Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. SO-8 MSL1 Class M4 (+/- 425V) AEC-Q101-002 Class H1B (+/- 1000V) AEC-Q101-001 Class C5 (+/- 1125V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 3/27/2014 9/30/2015 Comments Added "Logic Level Gate Drive" bullet in the features section on page 1 Updated part marking on page 6. Updated data sheet with new IR corporate template Updated datasheet with corporate template Corrected ordering table on page 1. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. 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It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 10 2015-9-30