GaAs Beam Lead Schottky Barrier Diodes MA4E2037, MA4E2039, MA4E2040
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V3.001
Features
• Low S e ries Resistan ce
• Low Capacitance
• High Cut-Off Frequency
• Silicon Nitride Passivation
• Multiple Configurations
Descri
p
tion
M/A-COM's MA4E2037 single, M A4E2039 antiparallel pair and
MA4E2040 series tee are gallium arsenide beam lead Schottky
barrier diodes. These devices are fabricated on OMCVD epitaxial
wafers using a process designed for high device uniformity and
extremely low parasitics. The high carrier mobility of gallium
arsenide results in lower series resistance than a silicon Schottky
with equivalent capacitance, resulting in lower noise figure and
conversion loss. The diodes are fully passivated with silicon
nitride and have an additional layer of a polymer for scratch
protection. The protective coatings prevent damage to the junction
and the anode airbridge during handling.
A
pp
lications
The high cut-off frequency of these diodes allows use through low
millimeter wave frequencies. Typical applications include single
and double balanced mixers in PCN transceivers and radios,
automotive radar systems and police radar detectors.
The MA4E2039 antiparallel pair is designed for use in subhar-
monically pumped mixers. Close matching of the diode charac-
teristics results in high LO suppre ssion a t the R F input.
Packa
g
e Outlines1, 2
Notes: (unless otherwise specified)
1. Dimensions are in mm (mils)
2. Views are with junction side up.
GaAs Beam Lead
Schottk
y
Barrier Diodes
MA4E2037, MA4E2039, MA4E2040
Absolute Maximum Ratin
g
s1
Parameter Maximum Ratings
Operating Temperature -65°C to +125°C
Storage Temperatur e -65°C to +125°C
Incident LO Power +20 dBm
Incident RF Power +2- dBm
Mounting Temperature +235°C for 10 seconds
1. Exceeding these limits may cause permanent damag e.
0.135 ± .010
(5 .3 ± .4) 0.210 ± .040
(8 .3 ± 1.6)
0.009 (0.4)
0.013 (0.5)
0.630 ± .0 10
(24.8 ± .6)
0.060 (2.4)
0.085 (3.4)
0.265 ± .0 40
(10.4 ± 1.6)
0.180 ± .02 0
(7 .1 ± .8 )
0.135 ± .010
(5.3 ± .4) 0.210 ± .040
(8.3 ± 1.6)
0.009 (0.4)
0.013 (0.5)
0.630 ± .010
(24.8 ± .6)
0.060 (2.4)
0.085 (3.4)
0.265 ± .040
(10.4 ± 1.6)
0.180 ± .020
(7.1 ± .8)
0.135 ± .010
(5.3 ± .4 ) 0.230 ± .040
(9.1 ± 1.6)
0.009 (0.4)
0.013 (0.5)
0.350 ± .040
(13.8 ± 1.6)
0.175 ± .020
(6.9 ± .8 )
0.700 ± .015
(27.6 ± .6)
0.060 (2.4)
0.085 (3.4)
0.135 ± .010
(5.3 ± .4 )
0.375 ± .015
(14.8 ± .6)
MA4E2037
MA4E2039
MA4E2040
GaAs Beam Lead Schottky Barrier Diodes MA4E2037, MA4E2039, MA4E2040
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V3.001
Electrical S
p
ecifications @ TA = +25°C MA4E2037 MA4E2039 MA4E2040
Single Anti -pa r al l e l Seri e s Tee
Symbol Paramete rs and Test C onditions Units Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
CjJunction Capacitance at 0V at 1 MHz pF - .020 - - .0203--.020
3
CtTotal Capacitance at 0V at 1 MHz 1pF .040 .050 .060 0.403.0503.0603.0403.0503.0603
CtTotal Capacitance Difference pF - - - - - - - .005 .010
RsSeries Resistance at +10mA2Ohms - 4 7 - 4 7 - 4 7
Vf1 Forward Voltage at +1mA Volts .60 .70 .80 .60 . 70 .80 .60 .70 .80
VfForward Voltage Difference at 1mA Volts - - - - .005 .010 - .005 .010
Vbr Reverse Breakdown Voltage at -10µAVolts 4.5 7 - - - - 4.5 7 -
1. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp.
2. Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 ohms at +10 mA.
3. Capacitance for the MA4E2039 and MA4E2040 is per Schottky diode.
Handlin
g
Procedures
The following precautions should be observed to avoid damag-
ing these chips:
Cleanliness:
These devices should be handled in a clean environment. Do not
attempt to clean die a f te r installa tion.
Static Sensitivity:
Schottky barrier diodes are ESD sensitive and can be damaged
by static electricity. Proper ESD techniques should be used
when handling these devices.
General Handling:
These devices have a polymer layer which provides scratch
protection for the junction ar ea and the anode air bridge. Beam
lead devices must, however, be handled with care since the leads
may easily be distorted or broken by the normal pressures
exerted when handled by tweezers. A vacuum pencil with a #27
tip is recommended for picking and placing. A sharpened
wooden stick which has been dipped in isopropyl alcohol may
also be used as a pick and place tool.
Mountin
g
Techni
q
ues
These devices are designed to be inserted onto hard or soft
substrates. Recommended methods of attachment include ther-
mocompression bonding, parallel-gap welding, solder reflow
and conductive epoxy.
See Application Note M541, “Bonding and Handling Proce-
dures for Chip Diode De v ic es” for Detaile d Instruc tions.
0.00
0.01
0.10
1.00
10.00
100.00
0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00
FORWARD VOLTAGE (V)
FORWARD CURRENT (mA)
T = 125oC
T = 25oC
T = -50oC
T
yp
ical Forward Characteristics
GaAs Beam Lead Schottky Barrier Diodes MA4E2037, MA4E2039, MA4E2040
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V3.001
