GaAs Beam Lead Schottky Barrier Diodes MA4E2037, MA4E2039, MA4E2040 MA4E2037, MA4E2039, MA4E2040 GaAs Beam Lead Schottky Barrier Diodes Features * * * * * Package Outlines Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation Multiple Configurations 1, 2 MA4E2037 0.13 5 .0 10 (5.3 .4 ) 0.21 0 .0 40 (8.3 1.6) Description M/A-COM's MA4E2037 single, MA4E2039 antiparallel pair and MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The high carrier mobility of gallium arsenide results in lower series resistance than a silicon Schottky with equivalent capacitance, resulting in lower noise figure and conversion loss. The diodes are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coatings prevent damage to the junction and the anode airbridge during handling. Applications The high cut-off frequency of these diodes allows use through low millimeter wave frequencies. Typical applications include single and double balanced mixers in PCN transceivers and radios, automotive radar systems and police radar detectors. 0.18 0 .0 20 (7.1 .8 ) 0.26 5 .0 40 (10.4 1.6) 0.63 0 .0 10 (24.8 .6 ) 0.00 9 (0.4 ) 0.01 3 (0.5 ) 0.06 0 (2.4 ) 0.08 5 (3.4 ) MA4E2039 0 .1 3 5 .0 1 0 (5 .3 .4 ) 0 .1 8 0 .0 2 0 (7 .1 .8 ) 0 .2 1 0 .0 4 0 (8 .3 1 .6 ) 0 .2 6 5 .0 4 0 (1 0 .4 1 .6 ) 0 .6 3 0 .0 1 0 (2 4 .8 .6 ) 0 .0 0 9 (0 .4 ) 0 .0 1 3 (0 .5 ) 0 .0 6 0 (2 .4 ) 0 .0 8 5 (3 .4 ) The MA4E2039 antiparallel pair is designed for use in subharmonically pumped mixers. Close matching of the diode characteristics results in high LO suppression at the RF input. MA4E2040 0.135 .010 (5.3 .4) 0.375 .015 (14.8 .6) 1 0.135 .010 0.230 .040 (5.3 .4) (9.1 1.6) Absolute Maximum Ratings Parameter Operating Temperature Storage Temperature Incident LO Power Incident RF Power Mounting Temperature Maximum Ratings -65C to +125C -65C to +125C +20 dBm +2- dBm +235C for 10 seconds 0.175 .020 (6.9 .8) 0.350 .040 (13.8 1.6) 0.700 .015 (27.6 .6) 0.009 (0.4) 0.013 (0.5) 0.060 (2.4) 0.085 (3.4) 1. Exceeding these limits may cause permanent damage. Notes: (unless otherwise specified) 1. Dimensions are in mm (mils) 2. Views are with junction side up. V3.001 M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. GaAs Beam Lead Schottky Barrier Diodes MA4E2037, MA4E2039, MA4E2040 Electrical Specifications @ TA = +25C Symbol Cj Ct Ct Rs Vf1 Vf Vbr Parameters and Test Conditions Junction Capacitance at 0V at 1 MHz 1 Total Capacitance at 0V at 1 MHz Total Capacitance Difference 2 Series Resistance at +10mA Forward Voltage at +1mA Forward Voltage Difference at 1mA Reverse Breakdown Voltage at -10A Units pF pF pF Ohms Volts Volts Volts MA4E2037 Single Min. Typ. Max. .020 .040 .050 .060 4 7 .60 .70 .80 4.5 7 - MA4E2039 Anti-parallel Min. Typ. Max. .0203 3 3 3 0.40 .050 .060 4 7 .60 .70 .80 .005 .010 - MA4E2040 Series Tee Min. Typ. Max. .0203 3 3 3 .040 .050 .060 .005 .010 4 7 .60 .70 .80 .005 .010 4.5 7 - 1. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp. 2. Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 ohms at +10 mA. 3. Capacitance for the MA4E2039 and MA4E2040 is per Schottky diode. Handling Procedures Mounting Techniques The following precautions should be observed to avoid damaging these chips: These devices are designed to be inserted onto hard or soft substrates. Recommended methods of attachment include thermocompression bonding, parallel-gap welding, solder reflow and conductive epoxy. Cleanliness: These devices should be handled in a clean environment. Do not attempt to clean die after installation. See Application Note M541, "Bonding and Handling Procedures for Chip Diode Devices" for Detailed Instructions. Static Sensitivity: Schottky barrier diodes are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices. Typical Forward Characteristics 1 0 0 .0 0 T = 2 5 oC 1 0 .0 0 FORWARD CURRENT (mA) General Handling: These devices have a polymer layer which provides scratch protection for the junction area and the anode air bridge. Beam lead devices must, however, be handled with care since the leads may easily be distorted or broken by the normal pressures exerted when handled by tweezers. A vacuum pencil with a #27 tip is recommended for picking and placing. A sharpened wooden stick which has been dipped in isopropyl alcohol may also be used as a pick and place tool. 1 .0 0 T = 1 2 5 oC 0 .1 0 T = -5 0 o C 0 .0 1 0 .0 0 0 .2 0 0 .3 0 0 .4 0 0 .5 0 0 .6 0 0 .7 0 0 .8 0 0 .9 0 1 .0 0 F O R W A R D V O L T A G E (V ) V3.001 M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. GaAs Beam Lead Schottky Barrier Diodes MA4E2037, MA4E2039, MA4E2040 V3.001 M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice.