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MOC256M — 8-pin SOIC AC Input Phototransistor Output Optocoupler
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC256M Rev. 6.5
July 2015
MOC256M
8-pin SOIC AC Input Phototransistor Output Optocoupler
Features
• Bidirectional AC Input
– Protection Against Reversed DC Bias
• Guaranteed CTR Symmetry of 2:1 Maximum
• Convenient Plastic SOIC-8 Surface Mountable
Package Style , with 0.050 " Lead Spacing
• Safety and Regulatory Approvals:
– UL1577, 2,500 VACRMS for 1 Minute
– DIN-EN/IEC60747-5-5, 565 V Peak Working
Insulation Voltage
Description
The MOC256M is an AC input phototransistor opto-
coupler. The device consists of two infrared emitters
connected in anti-parallel and coupled to a silicon NPN
phototransistor detector. It is designed for applications
requiring the detection or monitoring of AC signals. The
device is constructed with a standard SOIC-8 footprint.
Schematic Package Outline
BASE
N/CAC IN
AC IN
1
2
3
45
6
7
8
EMITTER
COLLECTORN/C
N/C
Figure 1. Schematic
Figure 2. Package Outline
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC256M Rev. 6.5 2
MOC256M — 8-pin SOIC AC Input Phototransistor Output Optocoupler
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
Parameter Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I–IV
< 300 VRMS I–III
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Tracking Index 175
Symbol Parameter Value Unit
VPR
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test wi th tm = 10 s, Partial Discharge < 5 pC 904 Vpeak
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1060 Vpeak
VIORM Maximum Working Insulation Voltage 565 Vpeak
VIOTM Highest Allowable Over-Voltage 4000 Vpeak
External Creepage ≥ 4mm
External Clearance ≥ 4mm
DTI Distance Through Insulation (Insulation Thickness) ≥ 0.4 mm
TSCase Temperature(1) 150 °C
IS,INPUT Input Current(1) 200 mA
PS,OUTPUT Output Power(1) 300 mW
RIO Insulation Resistance at TS, VIO = 500 V(1) > 109Ω
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC256M Rev. 6.5 3
MOC256M — 8-pin SOIC AC Input Phototransistor Output Optocoupler
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exp osure to stresses above the reco mmended op erating conditions may affe ct device reliabil ity.
The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified.
Symbol Rating Value Unit
TOTAL DEVICE
TSTG Storage Temperature -40 to +125 °C
TAAmbient Operating Temperature -40 to +100 °C
TJJunction Temperature -40 to +125 °C
TSOL Lead Solder Temperature 260 for 10 seconds °C
PDTotal Device Power Dissipation @ TA = 25°C 240 mW
Derate Above 25°C 2.94 mW/°C
EMITTER
IFContinuous Forward Current 60 mA
IF (pk) Forward Current – Peak (PW = 100 µs, 120 pps) 1.0 A
VRReverse Voltage 6.0 V
PDLED Power Dissipation @ TA = 25°C 90 mW
Derate Above 25°C 0.8 mW/°C
DETECTOR
ICContinuous Collector Current 150 mA
VCEO Collector-Emitter Voltage 30 V
VCBO Collector-Base V oltage 70 V
VECO Emitter-Collector Voltage 7 V
PDDetector Power Dissipation @ TA = 25°C 150 mW
Derate Above 25°C 1.76 mW/°C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC256M Rev. 6.5 4
MOC256M — 8-pin SOIC AC Input Phototransistor Output Optocoupler
Electrical Characteristics
TA = 25°C unless otherwise specified.
Isolation Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
EMITTER
VFInput Forward Voltage IF = ±10 mA 1.2 1.5 V
CIN Input Capacitance V = 0 V, f = 1 MHz 20 pF
DETECTOR
ICEO1 Collector-Emitter Dark Curr ent VCE = 10 V, TA = 25°C 1.0 100 nA
ICEO2 VCE = 10 V, TA = 100°C 1.0 µA
ICBO Collector-Bas e D ark C urrent VCB = 10 V 0.2 nA
BVCEO Collector-Emitter Breakdown
Voltage IC = 10 mA 30 100 nA
BVCBO Collector-Base Breakdown
Voltage IC = 100 µA 70 120 V
BVECO Emitter-Collector Breakdown
Voltage IE = 100 µA 5 10 V
CCE Collector-Emitter Capaci tance f = 1.0 MHz, VCE = 0 7 pF
CCB Collector -Base Capacitance f = 1.0 MHz, VCB = 0 20 pF
CEB Emitter-Base Capacitance f = 1.0 MHz, VEB = 0 10 pF
COUPLED
CTR Current Transfer Ratio IF = ±10 mA, VCE = 10 V 20 150 %
Output-Collector Current
Symmetry IC @ IF = +10 mA, VCE = 10 V
IC @ IF = –10 mA, VCE = 10 V 0.5 2.0
VCE (SAT) Collector-Emitter Saturation
Voltage IC = 0.5 mA, IF = ±10 mA 0.1 0.4 V
Symbol Characteristic Test Conditions Min. Typ. Max. Unit
VISO Input-Output Isolation Voltage t = 1 Minute 2500 VACRMS
CISO Isolation Capacitance VI-O = 0 V, f = 1 MHz 0.2 pF
RISO Isolation Resistance VI-O = ±500 VDC, TA = 25°C 1011 Ω
()
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC256M Rev. 6.5 5
MOC256M — 8-pin SOIC AC Input Phototransistor Output Optocoupler
Typical Performance Curves
Figure 4. Output Curent vs. Input Current
I
F
– LED INPUT CURRENT (mA)
0.1 1 10 100
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
0.01
0.1
1
10
V
CE
= 5 V
NORMALIZED TO I
F
= 10 mA
Figure 5. Output Current vs. Ambient Temperature
T
A
– AMBIENT TEMPERATURE (°C)
-80 -60 -40 -20 0 20 40 60 80 100 120
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
0.1
1
10
NORMALIZED TO T
A
= 25°C
Figure 6. Output Current vs. Collector-Emitter Voltage
V
CE
– COLLECTOR-EMITTER VOLTAGE (V)
012345678910
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
F
= 10 mA
NORM ALIZED TO V
CE
= 5 V
Figure 7. Dark Current vs. Ambient Temperature
T
A
– AMBIENT TEMPERATURE (°C)
0 20406080100
I
CEO
– COLLECTOR -EMITTER DARK CURRENT (nA)
0.1
1
10
100
1000
10000
V
CE
= 10 V
Figure 3.
Input Current vs. Input Voltage
VF
– INPUT VOLTAGE (V)
-2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0
I
F
– INPUT CURRENT (mA)
-100
-80
-60
-40
-20
0
20
40
60
80
100
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC256M Rev. 6.5 6
MOC256M — 8-pin SOIC AC Input Phototransistor Output Optocoupler
Reflow Profile
Figure 8. Reflow Prof ile
Profile Freature Pb-Free Assembly Profile
Temperature Minimum (Tsmin) 150°C
Temperature Maximum (Tsmax) 200°C
Time (tS) from (Tsmin to Tsmax) 60–120 seconds
Ramp-up Rate (tL to tP) 3°C/second maximum
Liquidous Temperature (TL) 217°C
Time (tL) Maintained Above (TL) 60–150 seconds
Peak Body Package Temperature 260°C +0°C / –5°C
Time (tP) within 5°C of 260°C 30 seconds
Ramp-down Rate (TP to TL) 6°C/second maximum
Time 25°C to Peak Temperature 8 minutes maximum
Time (seconds)
Temperature (°C)
Time 25°C to Peak
260
240
220
200
180
160
140
120
100
80
60
40
20
0
T
L
t
s
t
L
t
P
T
P
Tsmax
Tsmin
120
Preheat Area
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
240 360
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC256M Rev. 6.5 7
MOC256M — 8-pin SOIC AC Input Phototransistor Output Optocoupler
Ordering Information
Marking Information
Figure 9. Top Mark
Table 1. Top Mark Definitions
Part Number Package Packing Method
MOC256M Small Outline 8-Pin Tube (100 Units)
MOC256R2M Small Outline 8-Pin Tape and Reel (2500 Units)
MOC256VM Small Outline 8-Pin, DIN EN/IEC60747-5-5 Option Tube (100 Units)
MOC256R2VM Small Outline 8-Pin, DIN EN/IEC60747-5-5 Option Tape and Reel (2500 Units)
1 Fairchild Logo
2 Device Number
3 DIN EN/IEC60747-5-5 Option (only appea rs on component ordered with this option)
4 One-Digit Year Code, e.g., “4”
5 Digit Work W eek, Ranging from “01” to “53”
6 Assembly Package Code
1
2
6
43 5
256
SYYXV
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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