APTG
S50
X
17
0
T
E
3
APTGS50X170TE3 – Rev 0 July, 2003
APT website – http://www.advancedpower.com
1
-
3
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1516
17
13
14
87 9 1110
1819
5 63 41
21
20
122
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 1700 V
T
C
= 25°C 100
I
C
Continuous Collector Current T
C
= 80°C 50
I
CM
Pulsed Collector Current T
C
= 25°C 150
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
C
= 25°C 480 W
RBSOA Reverse Bias Operating Area T
j
= 125°C 100A@1600V
VCES = 1700V
IC = 50A @ Tc = 80°C
Application
• AC Motor control
Features
• Non Punch Through (NPT) Low Loss IGBT
®
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
3 Phase bridge
N
PT IGBT Power Module
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APTG
S50
X
17
0
T
E
3
APTGS50X170TE3 – Rev 0 July, 2003
APT website – http://www.advancedpower.com
2
-
3
Electrical Characteristics All ratings @ T
j
= 25°C unless otherwise specified
Symbol
Characteristic Test Conditions Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage V
GE
= 0V, I
C
= 1mA
1700
V
T
j
= 25°C 0.02 0.1
I
CES
Zero Gate Voltage Collector Current V
GE
= 0V
V
CE
= 1700V T
j
= 125°C 1.5 mA
T
j
= 25°C 2.7 3.3
V
CE(on)
Collector Emitter on Voltage V
GE
=15V
I
C
= 50A T
j
= 125°C 3.2 V
V
GE(th)
Gate Threshold Voltage V
GE
= V
CE
, I
C
= 2.5 mA 4.5 6.5 V
I
GES
Gate – Emitter Leakage Current V
GE
= 20V, V
CE
= 0V 100 nA
Dynamic Characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
C
ies
Input Capacitance V
GE
= 0V, V
CE
= 25V
f = 1MHz 3500 pF
T
d(on)
Turn-on Delay Time 100
T
r
Rise Time 100
T
d(off)
Turn-off Delay Time 800
T
f
Fall Time
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 900V
I
C
= 50A
R
G
= 30Ω 30
ns
T
d(on)
Turn-on Delay Time 100
T
r
Rise Time 100
T
d(off)
Turn-off Delay Time 900
T
f
Fall Time 30
ns
E
off
Turn off Energy
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 900V
I
C
= 50A
R
G
= 30Ω
14.5 mJ
Reverse diode ratings and characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
T
j
= 25°C 2.2 2.6
V
F
Diode Forward Voltage I
F
= 50A
V
GE
= 0V T
j
= 125°C 2.0 V
T
j
= 25°C 2
E
r
Reverse Recovery Energy I
F
= 50A
V
R
= 900V
di/dt =750A/µs T
j
= 125°C 4 mJ
T
j
= 25°C 6
Q
rr
Reverse Recovery Charge I
F
= 50A
V
R
= 900V
di/dt =750A/µs
T
j
= 125°C 12 µC
Temperature sensor NTC
Symbol
Characteristic Min Typ Max Unit
R
25
Resistance @ 25°C 5 kΩ
B
25/50
T
25
= 298.16 K 3375 K
−
=
TT
B
R
R
T
11
exp
25
50/25
25
T: Thermistor temperature
R
T
: Thermistor value at T
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APTG
S50
X
17
0
T
E
3
APTGS50X170TE3 – Rev 0 July, 2003
APT website – http://www.advancedpower.com
3
-
3
Thermal and package characteristics
Symbol
Characteristic Min Typ Max Unit
IGBT 0.26
R
thJC
Junction to Case Diode 0.56 °C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz 2500 V
T
J
Operating junction temperature range -40 150
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 125
°C
Torque Mounting torque To Heatsink M5 3 4.5 N.m
Wt Package Weight 300 g
Package outline
PIN 1
PIN 21
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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