VMMK-2503-BLKG - Avago Technologies

VMMK-2503

1 to 12 GHz GaAs Wideband Ampli er in Wafer Level Package

Data Sheet

Description

Avago’s VMMK-2503 is an easy-to-use broadband, high

linearity ampli er in a miniaturized wafer level package

(WLP). The wide band and unconditionally stable perfor-

mance makes this ampli er suitable as a gain block or a

transmitter driver in many applications from 1–12GHz. A 5V,

65mA power supply is required for optimal performance.

This ampli er is fabricated with enhancement E-pHEMT

technology and industry leading wafer level package. The

GaAsCap wafer level package is small and ultra thin yet

can be handled and placed with standard 0402 pick and

place assembly. This product is easy to use since it requires

only positive DC voltages for bias and no matching coef-

 cients are required for impedance matching to 50 

systems.

WLP 0402, 1mm x 0.5mm x 0.25 mm

Attention: Observe precautions for

handling electrostatic sensitive devices.

ESD Machine Model = 50V

ESD Human Body Model = 125V

Refer to Avago Application Note A004R:

Electrostatic Discharge, Damage and Control.

Pin Connections (Top View)

Note:

“G” = Device Code

“Y” = Month Code

Features

 1 x 0.5 mm Surface Mount Package

 Ultrathin (0.25mm)

 Unconditionally Stable

 Ultrawide Bandwidth

 Gain Block or Driver Ampli er

 RoHS6 + Halogen Free

Typical Performance (Vdd = 5.0V, Idd = 65mA)

 Output IP3: 27dBm

 Small-Signal Gain: 13.5dB

 Noise Figure: 3.4dB

Applications

 2.4 GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook

computer, access point and mobile wireless

applications

 802.16 & 802.20 BWA systems

 Radar, radio and ECM systems

 UWB

GYOutput

/ Vdd

Input

/ Vc

Amp

Input

/ Vc Output

/ Vdd

Table 1. Absolute Maximum Ratings [1]

Sym Parameters/Condition Unit Absolute Max

Vd Supply Voltage (RF Output) [2] V6

Id Device Current [2] mA 120

Pin, max CW RF Input Power (RF Input) [3] dBm +20

Pdiss Total Power Dissipation mW 720

Tch Max channel temperature °C 150

jc Thermal Resistance [4] °C/W 140

Notes

1. Operation in excess of any of these conditions may result in permanent damage to this device.

2. Bias is assumed DC quiescent conditions

3. With the DC (typical bias) and RF applied to the device at board temperature Tb = 25°C

4. Thermal resistance is measured from junction to board using IR method

Table 2. DC and RF Speci cations

TA= 25°C, Frequency = 6 GHz, Vd = 5V, Zin = Zout = 50 (unless otherwise speci ed)

Sym Parameters/Condition Unit Minimum Typ. Maximum

Id Device Current mA 68 88

NF[1,2] Noise Figure dB – 3.04 4.1

Ga [1,2] Associated Gain dB 12.5 13.5 18

OIP3 [1,2,3] Output 3rd Order Intercept dBm +27 –

P-1dB[1,2] Output Power at 1dB

Gain Compression

dBm +17 –

IRL [1,2] Input Return Loss dB – -14 –

ORL [1,2] Output Return Loss dB – -20 –

Notes:

1. Losses of test systems have been de-embedded from  nal data

2. Measure Data obtained from wafer-probing

3. OIP3 test condition: F1 = 6.0GHz, F2 = 6.01GHz, Pin = -20dBm

Product Consistency Distribution Charts at 6.0 GHz, Vd = 5 V

Id @ 5V, Mean=68mA, USL=88mA NF@ 6GHZ, Mean=3.04dB, USL=4.1dB

Gain @ 6GHz, Mean=13.5dB, LSL=12.5dB, USL=18dB

Note: Distribution data based on ~50Kpcs sample size from MPV lots.

VMMK-2503 Typical Performance

A = 25°C, Vdd = 5V, Idd = 65mA, Zin = Zout = 50  unless noted)

Figure 1. Small-signal Gain [1]

Figure 3. Input Return Loss [1]

Figure 5. Output Return Loss [1]

Figure 2. Noise Figure [1]

Figure 4. Isolation [1]

Figure 6. Output IP3 [1,2]

Notes:

1. Data taken on a G-S-G probe substrate fully de-embedded to the reference plane of the package

2. Output IP3 data taken at Pin=-15dBm

135791113

Frequency (GHz)

IP3 & P1dB (dBm)

-30

-20

-10

135791113

Frequency (GHz)

S22 (dB)

-20

-15

-10

-5

135791113

Frequency (GHz)

S11 (dB)

-30

-20

-10

1 3 5 7 9 11 13

Frequency (GHz)

S12 (dB)

135791113

Frequency (GHz)

S21 (dB)

135791113

Frequency (GHz)

NoiseFigure (dB)

OIP3

OP1dB

VMMK-2503 Typical Performance (continue)

A = 25°C, Vdd = 5V, Idd = 65mA, Zin = Zout = 50  unless noted)

Figure 7. Gain over Vdd [1]

Figure 9. Input Return Loss over Vdd [1]

Figure 11. Output Return Loss Over Vdd [1]

Figure 8. Total Current [1]

Figure 10. Noise Figure over Vdd [1]

Figure 12. Output P1dB Over Vdd [1]

Note:

1. Data taken on a G-S-G probe substrate fully de-embedded to the reference plane of the package

135791113

Frequency (GHz)

S21 (dB)

-30

-20

-10

135791113

Frequency (GHz)

S11 (dB)

4.5V

-30

-20

-10

135791113

Frequency (GHz)

S22 (dB)

12345

Vdd (V)

Idd (mA)

2.5

3.5

4.5

1 3 5 7 9 11 13

Frequency (GHz)

NoiseFigure (dB)

135791113

Frequency (GHz)

OP1dB (dBm)

4.5V

VMMK-2503 Typical Performance (continue)

A = 25°C, Vdd = 5V, Idd = 65mA, Zin = Zout = 50  unless noted)

Figure 13. Output P1dB over Temp [3]

Figure 15. Gain over Temp [3]

Figure 17. Input Return Loss Over Temp [3]

Figure 14. Output IP3 over Vdd [1,2]

Figure 16. Noise Figure over Temp [3]

Figure 18. Output Return Loss Over Temp [3]

Notes:

1. Data taken on a G-S-G probe substrate fully de-embedded to the reference plane of the package

2. Output IP3 data taken at Pin=-15dBm

3. Over temp data taken on a test  xture (Figure 20) without de-embedding

1357911 13

Frequency (GHz)

OP1dB (dBm)

1357911 13

Frequency (GHz)

S21 (dB)

25C

85C

-40C

-30

-20

-10

1357911 13

Frequency (GHz)

S11 (dB)

-30

-20

-10

1357911 13

Frequency (GHz)

S22 (dB)

1357911 13

Frequency (GHz)

NoiseFigure (dB)

1357911 13

Frequency (GHz)

OIP3 (dBm)

25C

-40C

85C

25C

-40C

85C

25C

-40C

85C

-45C

25C

85C

4.5V

VMMK-2503 Typical S-parameters

A = 25°C, Vdd = 5V, Idd = 65mA, Zin = Zout = 50 unless noted)

Freq

GHz

S11 S21 S12 S22

Mag dB Phase Mag dB Phase Mag dB Phase Mag dB Phase

1 0.32 -9.94 -58.82 5.73 15.16 157.97 0.10 -20.26 17.70 0.11 -19.18 -82.09

2 0.19 -14.31 -63.36 5.34 14.54 146.59 0.10 -19.58 6.88 0.08 -21.51 -116.84

3 0.16 -15.75 -62.41 5.22 14.35 133.94 0.11 -19.32 1.32 0.09 -21.40 -127.88

4 0.17 -15.65 -68.23 5.13 14.20 120.62 0.11 -19.14 -2.44 0.09 -20.96 -135.63

5 0.17 -15.19 -75.79 5.02 14.02 106.87 0.11 -18.91 -5.92 0.09 -21.32 -144.09

6 0.18 -14.78 -87.11 4.90 13.80 93.04 0.12 -18.67 -9.42 0.08 -21.68 -155.26

7 0.19 -14.44 -99.64 4.75 13.54 79.16 0.12 -18.45 -13.07 0.08 -21.97 -166.36

8 0.20 -14.12 -114.81 4.58 13.23 65.36 0.12 -18.22 -17.02 0.08 -22.44 -177.07

9 0.20 -14.04 -131.20 4.40 12.87 51.67 0.13 -18.04 -21.15 0.07 -23.45 171.57

10 0.20 -13.87 -150.35 4.19 12.44 38.17 0.13 -17.87 -25.41 0.06 -25.01 159.23

11 0.21 -13.60 -169.56 3.97 11.98 24.99 0.13 -17.74 -29.85 0.04 -26.97 144.70

12 0.22 -13.03 169.40 3.75 11.48 12.06 0.13 -17.67 -34.27 0.03 -29.82 128.66

13 0.24 -12.24 149.90 3.53 10.94 -0.50 0.13 -17.60 -38.63 0.02 -33.72 105.68

14 0.27 -11.38 131.14 3.30 10.38 -12.65 0.13 -17.58 -43.09 0.01 -38.20 58.43

15 0.30 -10.41 115.07 3.09 9.79 -24.56 0.13 -17.53 -47.40 0.01 -37.52 -7.15

16 0.34 -9.46 99.90 2.88 9.19 -36.14 0.13 -17.52 -51.43 0.02 -35.60 -43.96

17 0.37 -8.69 86.76 2.68 8.57 -47.41 0.13 -17.48 -55.43 0.02 -34.56 -75.88

18 0.40 -7.97 74.14 2.50 7.95 -58.26 0.14 -17.38 -59.63 0.02 -32.77 -114.10

19 0.43 -7.25 63.67 2.33 7.33 -68.81 0.14 -17.30 -63.51 0.04 -29.02 -141.61

20 0.46 -6.81 53.97 2.17 6.73 -79.06 0.14 -17.17 -67.56 0.05 -25.71 -158.63

21 0.48 -6.34 44.61 2.03 6.14 -89.16 0.14 -16.98 -71.95 0.07 -23.24 -171.34

22 0.50 -5.99 36.42 1.90 5.56 -99.02 0.14 -16.80 -76.07 0.09 -21.38 176.10

23 0.52 -5.75 28.20 1.78 5.00 -108.79 0.15 -16.51 -80.97 0.10 -19.69 163.29

24 0.52 -5.60 20.04 1.67 4.45 -118.23 0.15 -16.27 -85.94 0.13 -17.99 152.12

25 0.53 -5.44 11.74 1.58 3.95 -127.94 0.16 -15.93 -91.73 0.15 -16.23 141.89

26 0.54 -5.31 3.35 1.49 3.44 -137.60 0.17 -15.63 -97.31 0.18 -15.01 131.61

27 0.55 -5.25 -4.75 1.40 2.92 -147.29 0.17 -15.30 -103.67 0.21 -13.76 122.83

28 0.55 -5.18 -13.14 1.32 2.41 -156.96 0.18 -14.97 -110.73 0.23 -12.60 115.49

29 0.56 -5.10 -21.24 1.24 1.87 -166.74 0.19 -14.65 -117.22 0.25 -11.87 107.66

30 0.56 -4.97 -28.87 1.17 1.37 -176.51 0.19 -14.44 -125.53 0.27 -11.27 98.81

31 0.57 -4.86 -37.32 1.10 0.85 173.80 0.20 -14.07 -133.23 0.29 -10.66 91.12

32 0.58 -4.73 -45.58 1.04 0.33 163.80 0.20 -13.82 -141.57 0.31 -10.18 82.29

33 0.59 -4.57 -53.12 0.98 -0.20 153.80 0.21 -13.63 -150.48 0.32 -9.78 72.68

34 0.61 -4.32 -60.88 0.92 -0.73 143.95 0.22 -13.32 -159.58 0.34 -9.35 64.58

35 0.63 -4.08 -68.98 0.86 -1.32 133.28 0.22 -13.22 -169.26 0.35 -9.07 55.81

36 0.64 -3.86 -75.63 0.81 -1.87 123.11 0.22 -13.01 -179.29 0.37 -8.67 45.15

Figure 19. Usage of the VMMK-2503

Figure 20. Evaluation/Test Board (available to quali ed customer request)

VMMK-2503 Application and Usage

(Please always refer to the latest Application Note AN5378 in website)

Biasing and Operation

The VMMK-2503 is normally biased with a positive drain

supply connected to the output pin through an external

bias-tee and with bypass capacitors as shown in Figure

19. The recommended drain supply voltage is 5 V and the

corresponding drain current is approximately 65mA. The

input of the VMMK-2503 is AC coupled and a DC-blocking

capacitor is not required. Aspects of the ampli er perfor-

mance may be improved over a narrower bandwidth by

application of additional conjugate, linearity, or low noise

(opt) matching.

Amp

Bias-Tee

Input

Vdd

Output

Size: 1.1 mm x 0.6 mm (0402 component)

50 Ohm line 50 Ohm line

100 pF

0.1 uF

Output

Pad

Ground

Pad

Input

Pad

Amp

Input

Vdd

Output

Pad

Ground

Pad

Input

Pad

50 Ohm line 50 Ohm line

100 pF

0.1 uF

10 nH

100 pF

Size: 1.1 mm x 0.6 mm (0402 component)

Figure 21. Example application of VMMK-2503 at 5.8GHz

Biasing the device at 5V compared to 4V results in higher

gain, higher IP3 and P1dB. In a typical application, the bias-

tee can be constructed using lumped elements. The value

of the output inductor can have a major e ect on both

low and high frequency operation. The demo board uses

an 10nH inductor that has self resonant frequency higher

than the maximum desired frequency of operation. At

frequencies higher than 6GHz, it may be advantageous to

use a quarter-wave long micro-strip line to act as a high-

impedance at the desired frequency of operation. This

technique proves a good solution but only over relatively

narrow bandwidths.

Another approach for broadbanding the VMMK-2503 is

to series two di erent value inductors with the smaller

value inductor placed closest to the device and favoring

the higher frequencies. The larger value inductor will then

o er better low frequency performance by not loading

the output of the device. The parallel combination of the

100pF and 0.1uF capacitors provide a low impedance

in the band of operation and at lower frequencies and

should be placed as close as possible to the inductor. The

low frequency bypass provides good rejection of power

supply noise and also provides a low impedance termi-

nation for third order low frequency mixing products

that will be generated when multiple in-band signals are

injected into any ampli er.

Refer the Absolute Maximum Ratings table for allowed DC

and thermal conditions.

S Parameter Measurements

The S-parameters are measured on a .016 inch thick

RO4003 printed circuit test board, using G-S-G (ground

signal ground) probes. Coplanar waveguide is used to

provide a smooth transition from the probes to the device

under test. The presence of the ground plane on top of

the test board results in excellent grounding at the device

under test. A combination of SOLT (Short - Open - Load

- Thru) and TRL (Thru - Re ect - Line) calibration tech-

niques are used to correct for the e ects of the test board,

resulting in accurate device S-parameters. The reference

plane for the S Parameters is at the edge of the package.

The product consistency distribution charts shown on

page 2 represent data taken by the production wafer probe

station using a 300um G-S wafer probe. The ground-signal

probing that is used in production allows the device to be

probed directly at the device with minimal common lead

inductance to ground. Therefore there will be a slight dif-

ference in the nominal gain obtained at the test frequency

using the 300um G-S wafer probe versus the 300um G-S-G

printed circuit board substrate method.

Recommended SMT Attachment

The VMMK Packaged Devices are compatible with high

volume surface mount PCB assembly processes.

Manual Assembly for Prototypes

1. Follow ESD precautions while handling packages.

2. Handling should be along the edges with tweezers or

from topside if using a vacuum collet.

3. Recommended attachment is solder paste. Please

see recommended solder re ow pro le. Conductive

epoxy is not recommended. Hand soldering is not

recommended.

4. Apply solder paste using either a stencil printer or

dot placement. The volume of solder paste will be

dependent on PCB and component layout and should

be controlled to ensure consistent mechanical and

electrical performance. Excessive solder will degrade RF

performance.

5. Follow solder paste and vendor’s recommendations

when developing a solder re ow pro le. A standard

pro le will have a steady ramp up from room

temperature to the pre-heat temp to avoid damage

due to thermal shock.

6. Packages have been quali ed to withstand a peak

temperature of 260C for 20 to 40 sec. Verify that the

pro le will not expose device beyond these limits.

7. Clean o  ux per vendor’s recommendations.

8. Clean the module with Acetone. Rinse with alcohol.

Allow the module to dry before testing.

Outline Drawing

Notes:

1.  indicates pin 1

2. Dimensions are in millimeters

3. Pad Material is minimum 5.0 um thick Au

Suggested PCB Material and Land Pattern

Notes:

1. 0.010” Rogers RO4350

0.25mm

0.5 mm

1.00mm

0.2mm

0.3mm

0.7mm

0.8mm

0.5mm

Top ViewSide View

Bottom View

1.2 (0.048)

0.100 (0.004)

0.500 (0.020)0.500 (0.020)

0.400 (0.016)

0.100 (0.004)

0.254 dia PTH

(0.010) 4pl

0.400 dia

(0.016) 4pl

0.200

(0.008)

0.381 (0.015) 2pl

0.200

(0.008)

Part of

Input

Circuit

Part of

Output

Circuit

0.076 max

(0.003) 2pl -

see discussion Solder Mask

0.7 (0.028)

Ordering Information

Part Number

Devices Per

Container Container

VMMK-2503-BLKG 100 Antistatic Bag

VMMK-2503-TR1G 5000 7” Reel

Package Dimension Outline

Reel Orientation Device Orientation

TOP VIEW END VIEW

uGY

8 mm

4 mm

Note:

“C” = Device Code

”Y” = Month Code

USER FEED DIRECTION

CARRIER TAPE SEALED

WITH COVER TAPE

USER FEED

DIRECTION

REEL

Note:

All dimensions are in mm

Die dimension:

DimRange Unit

D 1.004 - 1.085 mm

E0.500 - 0.585 mm

A0.225 - 0.275 mm

For product information and a complete list of distributors, please go to our web site: www.avagotech.com

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.

AV02-2004EN - February 2, 2012

Notice:

1. 10 Sprocket hole pitch cumulative tolerance is ±0.1mm.

2. Pocket position relative to sprocket hole measured as true position

of pocket not pocket hole.

3. Ao & Bo measured on a place 0.3mm above the bottom of the

pocket to top surface of the carrier.

4. Ko measured from a plane on the inside bottom of the pocket to

the top surface of the carrier.

5. Carrier camber shall be not than 1m per 100mm through a length

of 250mm.

Unit: mm

Symbol Spec.

K1 –

Po 4.0±0.10

P1 4.0±0.10

P2 2.0±0.05

Do 1.55±0.05

D1 0.5±0.05

E 1.75±0.10

F 3.50±0.05

10Po 40.0±0.10

W 8.0±0.20

T 0.20±0.02

Note: 2

Note: 1

DoB

Note: 2

P1 D1

R0.1

5° (Max)

Scale 5:1

AA SECTION

Ao = 0.73±0.05 mm

Bo = 1.26±0.05 mm

Ko = 0.35 +0.05 mm

Scale 5:1

BB SECTION

5° (Max)

Tape Dimensions