AOT262L/AOB262L
Symbol Min Typ Max Units
BVDSS 60 V
VDS=60V, VGS=0V 1
TJ=55°C 5
IGSS 100 nA
VGS(th) Gate Threshold Voltage 2.2 2.7 3.2 V
ID(ON) 500 A
2.2 3
TJ=125°C 3.6
gFS 80 S
VSD 0.65 1 V
IS140 A
Ciss 6500 8140 9800 pF
Coss 830 1040 1350 pF
Crss 25 32 55 pF
Rg0.5 1 1.5 Ω
Qg(10V) 75 95 115 nC
Qgs 30 nC
Qgd 5nC
tD(on) 27 ns
tr22 ns
tD(off) 47 ns
tf8ns
trr 21 30 39 ns
Qrr 130 185 240 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2.3 3
mΩ
2.5
2 2.8
3.2
RDS(ON) Static Drain-Source On-Resistance
VGS=6V, ID=20A
TO220
VGS=6V, ID=20A
TO263
IDSS µA
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=10V, VDS=5V
Reverse Transfer Capacitance
IF=20A, dI/dt=500A/µs
VGS=0V, VDS=30V, f=1MHz
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Diode Forward Voltage
VGS=10V, ID=20A
TO263
IS=1A,VGS=0V
VDS=5V, ID=20A
VDS=0V, VGS= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Forward Transconductance
VDS=VGS ID=250µA
VGS=10V, ID=20A
TO220
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
VGS=10V, VDS=30V, ID=20A
Gate Source Charge
Gate Drain Charge
SWITCHING PARAMETERS
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
Maximum Body-Diode Continuous CurrentG
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev0 : Nov 2010 www.aosmd.com Page 2 of 6