V20DM45C
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Revision: 14-Mar-2019 1Document Number: 87585
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Dual Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.4 V at IF = 5.0 A
DESIGN SUPPORT TOOLS AVAILABLE
FEATURES
Trench MOS Schottky technology
Very low profile - typical height of 1.7 mm
Ideal for automated placement
Low forward voltage drop, low power losses
High efficiency operation
Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
AEC-Q101 qualified available:
- Automotive ordering code: base P/NHM3
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection in commercial, industrial, and
automotive application.
MECHANICAL DATA
Case: SMPD (TO-263AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meet JESD 201 class 2 whisker test
Polarity: as marked
Notes
(1) Mounted on infinite heatsink
(2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA
PRIMARY CHARACTERISTICS
IF(AV) 2 x 10 A
VRRM 45 V
IFSM 150 A
VF at IF = 10 A (TA = 125 °C) 0.46 V
TJ max. 175 °C
Package SMPD (TO-263AC)
Circuit configuration Common cathode
Top View Bottom View
Anode 1
Anode 2
K
Cathode
eSMP® Series
SMPD (TO-263AC)
K
1
2
3
3
D
D
3
D
3D Models
Available
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V20DM45C UNIT
Device marking code V20DM45C
Maximum repetitive peak reverse voltage VRRM 45 V
Maximum average forward rectified current
(fig. 1)
per device
IF(AV) (1) 20
A
per diode 10
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load IFSM 150 A
Operating junction temperature range TJ (2) -40 to +175
°C
Storage temperature range TSTG -55 to +175
V20DM45C
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Revision: 14-Mar-2019 2Document Number: 87585
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 5 ms
Notes
(1) Mounted on infinite heatsink
(2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA - junction-to-ambient
(3) Free air, without heatsink
Note
(1) AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
IF = 5 A
TA = 25 °C
VF (1)
0.50 -
V
IF = 10 A 0.54 0.62
IF = 5 A
TA = 125 °C
0.40 -
IF = 10 A 0.46 0.54
Reverse current at rated VR per diode VR = 45 V
TA = 25 °C
IR (2) -0.2
mA
TA = 125 °C 3 8
Typical junction capacitance 4.0 V, 1 MHz CJ1460 - pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V20DM45C UNIT
Typical thermal resistance per device
RJC (1) 1.8
°C/W
RJA (2)(3) 58
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
V20DM45C-M3/I 0.55 I 2000/reel 13" diameter plastic tape and reel
V20DM45CHM3/I (1) 0.55 I 2000/reel 13" diameter plastic tape and reel
V20DM45C
www.vishay.com Vishay General Semiconductor
Revision: 14-Mar-2019 3Document Number: 87585
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Average Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0
5
10
15
20
25
0 25 50 75 100 125 150 175
Average Forward Rectied Current (A)
Case Temperature (°C)
RthJC = 1.8 °C/W
RthJA = 58 °C/W
0
1
2
3
4
5
6
7
024681012
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = tp/T
T
tp
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
TJ= 25 °C
TJ= 100 °C
TJ= 125 °C
TJ= -40 °C
TJ= 150 °C
TJ= 175 °C
Instantaneous Reverse Current (mA)
0.00001
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
TJ= 150 °C
TJ= 100 °C
TJ= 25 °C
TJ= -40 °C
TJ= 125 °C
TJ= 175 °C
10
100
1000
10 000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
TJ= 25 °C
f = 1.0 MHz
Vsi
g
= 50 mV
p
-
p
0.1
1
10
100
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction-to-ambient
V20DM45C
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Revision: 14-Mar-2019 4Document Number: 87585
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Thermal Resistance Junction-to-Ambient vs.
Copper Pad Areas
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
25
30
35
40
45
50
55
60
65
123456789
Thermal Resistance (°C/W)
Copper Pad Areas (cm
2
)
Epoxy printed circuit
board FR4 copper
thickness = 70 μm
S(cm2)
(8.99)
0.059 (1.50) REF.
(8.59)
0.354
0.338
(8.60)
(8.20)
0.339
0.323
(10.20)
(9.80)
0.402
0.386
(12.93)
(12.33)
0.509
0.485
(1.60)
(1.20)
0.063
0.047
(1.21)
(0.81)
0.048
0.032
(0.52)
(0.27)
0.020
0.011
(1.80)
(1.60)
0.071
0.063
(1.74)
(1.34)
0.069
0.053
(0.52)
(0.27)
0.020
0.011
(1.23)
(0.72)
0.052
0.028
(7.00)
(6.60)
0.276
0.260
Mounting Pad Layout
0.420 (10.66) MIN.
(15.33)
(13.33)
0.604
0.525
0.080 (2.03) MIN.
0.120 (3.05) REF.
(2.67)
(2.41)
0.105
0.095
SMPD (TO-263AC)
NOM.
0.194
(4.93)
NOM.
0.200
(5.08)
0 to
0.01
(0
to
0.254)
REF.
0.330
(8.38)
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