BFP 420ECSP
SIEGET
25
Aug-23-20001
NPN Silicon RF Transistor
Preliminary data
For high gain low noise amplifiers
For oscillators up to 10 GHz
Noise figure F = 1.15 dB at 1.8 GHz
outstanding Gms = 22 dB at 1.8 GHz
Transition frequency fT = 25 GHz
Gold metallization for high reliability
SIEGET
25 GHz fT - Line
•
••
•=
==
=Chip Scale Package
typical dimension: 1.0 x 0.6 x 0.5mm
2
3
1
XY
4
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP 420ECSP AMs 1 = B 2 = E 3 = C 4 = E E-CSP
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 4.5 V
Collector-base voltage VCBO 15
Emitter-base voltage VEBO 1.5
Collector current IC35 mA
Base current IB3
Total power dissipation, TS = tbd °C 1) Ptot tbd mW
Junction temperature Tj150 °C
Ambient temperature TA-65 ... 150
Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction - soldering point RthJS
tbd K/W
1TS is measured on the emitter lead at the soldering point to the pcb
BFP 420ECSP
SIEGET
25
Aug-23-20002
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 4.5 5 - V
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO - - 200 nA
Emitter-base cutoff current
VEB = 1.5 V, IC = 0
IEBO - - 35 µA
DC current gain
IC = 20 mA, VCE = 4 V
hFE 50 80 150 -
AC characteristics (verified by random sampling)
Transition frequency
IC = 30 mA, VCE = 3 V, f = 2 GHz
fT- 25 - GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz
Ccb - tbd - pF
Collector-emitter capacitance
VCE = 2 V, f = 1 MHz
Cce - tbd -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb - tbd -
Noise figure
IC = 5 mA, VCE = 2 V, ZS = ZSopt ,
f = 1.8 GHz
F- 1.1 - dB
Power gain, maximum stable 1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt , ZL = ZLopt ,
f = 1.8 GHz
Gms - 20 -
Insertion power gain
IC = 20 mA, VCE = 2 V, f = 1.8 GHz,
ZS = ZL = 50
|S21|2- 17 -
Third order intercept point
IC = 20 mA, VCE = 2 V, ZS=ZSopt , ZL=ZLopt ,
f = 1.8 GHz
IP3- 22 - dBm
1dB Compression point
IC = 20 mA, VCE = 2 V, f = 1.8 GHz,
ZS=ZSopt , ZL=ZLopt
P-1dB - 12 -
1Gms = |S21 / S12|
