SIEGET 25 BFP 420ECSP NPN Silicon RF Transistor Preliminary data For oscillators up to 10 GHz XY For high gain low noise amplifiers 4 Noise figure F = 1.15 dB at 1.8 GHz 3 outstanding G ms = 22 dB at 1.8 GHz 1 Transition frequency f T = 25 GHz Gold metallization for high reliability 2 SIEGET 25 GHz f T - Line *=Chip Scale Package typical dimension: 1.0 x 0.6 x 0.5mm ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 420ECSP AMs Pin Configuration 1=B 2=E 3=C Package 4=E E-CSP Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 4.5 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 1.5 Collector current IC 35 Base current IB 3 Total power dissipation, TS = tbd C 1) Ptot tbd mW Junction temperature Tj 150 C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 V mA Thermal Resistance Junction - soldering point RthJS tbd K/W 1T is measured on the emitter lead at the soldering point to the pcb S 1 Aug-23-2000 SIEGET 25 BFP 420ECSP Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. 4.5 5 - V ICBO - - 200 nA IEBO - - 35 A hFE 50 80 150 - fT - 25 - GHz Ccb - tbd - pF Cce - tbd - Ceb - tbd - F - 1.1 - Gms - 20 - |S21|2 - 17 - IP3 - 22 - P-1dB - 12 - DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 4 V V(BR)CEO AC characteristics (verified by random sampling) Transition frequency IC = 30 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Collector-emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum stable 1) IC = 20 mA, VCE = 2 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz Insertion power gain IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50 Third order intercept point IC = 20 mA, VCE = 2 V, ZS =ZSopt , ZL=ZLopt , f = 1.8 GHz 1dB Compression point IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS=ZSopt , ZL=ZLopt dB dBm 1G ms = |S21 / S12 | 2 Aug-23-2000