© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 12
1Publication Order Number:
MMBT2907ALT1/D
MMBT2907AL,
SMMBT2907AL
General Purpose Transistors
PNP Silicon
Features
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
•AEC−Q101 Qualified and PPAP Capable
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO −60 Vdc
Collector−Base Voltage VCBO −60 Vdc
Emitter−Base Voltage VEBO −5.0 Vdc
Collector Current − Continuous IC−600 mAdc
Collector Current − Peak (Note 3) ICM −1200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) @TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient RJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) @TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient RJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Reference SOA curve.
2F = Device Code
M = Date Code*
G= Pb−Free Package
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
Device Package Shipping†
ORDERING INFORMATION
MMBT2907ALT3G
SMMBT2907ALT3G
SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBT2907ALT1G
SMMBT2907ALT1G
SOT−23
(Pb−Free)
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
3000 / Tape &
Reel
10,000 / Tape &
Reel
SOT−23 (TO−236AB)
CASE 318
STYLE 6
MARKING DIAGRAM
1
2
1
3
2F M G
G
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 4)
(IC = −1.0 mAdc, IB = 0)
(IC = −10 mAdc, IB = 0)
V(BR)CEO −60
−60
−
−
Vdc
Collector−Base Breakdown Voltage (IC = −10 Adc, IE = 0) V(BR)CBO −60 −Vdc
Emitter−Base Breakdown Voltage (IE = −10 Adc, IC = 0) V(BR)EBO −5.0 −Vdc
Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) ICEX − −50 nAdc
Collector Cutoff Current
(VCB = −50 Vdc, IE = 0)
(VCB = −50 Vdc, IE = 0, TA = 125°C)
ICBO −
−
−0.010
−10
Adc
Base Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) IBL − −50 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −0.1 mAdc, VCE = −10 Vdc)
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −150 mAdc, VCE = −10 Vdc)
(IC = −500 mAdc, VCE = −10 Vdc) (Note 4)
hFE
75
100
100
100
50
−
−
−
300
−
−
Collector−Emitter Saturation Voltage (Note 4)
(IC = −150 mAdc, IB = −15 mAdc) (Note 4)
(IC = −500 mAdc, IB = −50 mAdc)
VCE(sat)
−
−
−0.4
−1.6
Vdc
Base−Emitter Saturation Voltage (Note 4)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VBE(sat)
−
−
−1.3
−2.6
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Notes 4, 5),
(IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz)
fT200 −MHz
Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cobo −8.0 pF
Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo −30
SWITCHING CHARACTERISTICS
Turn−On Time
(VCC = −30 Vdc, IC = −150 mAdc,
IB1 = −15 mAdc)
ton −45
ns
Delay Time td−10
Rise Time tr−40
Turn−Off Time
(VCC = −6.0 Vdc, IC = −150 mAdc,
IB1 = IB2 = −15 mAdc)
(VCC = −6.0 Vdc, IC = −150 mAdc,
IB1 = IB2 = −15 mAdc)
toff −100
Storage Time ts−80
Fall Time tf−30
4. Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%.
5. fT is defined as the frequency at which |hfe| extrapolates to unity.
00
-16 V
200 ns
50
1.0 k
200
-30 V
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
+15 V -6.0 V
1.0 k 37
50 1N916
1.0 k
200 ns
-30 V
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit
MMBT2907AL, SMMBT2907AL
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (mA)
100
1000
10
1.0
TJ = 150°C
25°C
-55°C
hFE, DC CURRENT GAIN
10 100 1000
VCE = 10 V
Figure 4. Collector Saturation Region
IB, BASE CURRENT (mA)
-0.4
-0.6
-0.8
-1.0
-0.2
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0
CE
IC = -1.0 mA
-0.005
-10 mA
-0.01
-100 mA -500 mA
-0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50
Figure 5. Turn−On Time
IC, COLLECTOR CURRENT
300
-5.0
Figure 6. Turn−Off Time
IC, COLLECTOR CURRENT (mA)
-5.0
t, TIME (ns)
t, TIME (ns)
200
100
70
50
30
20
10
7.0
5.0
3.0
-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
tr
2.0 V
td @ VBE(off) = 0 V
VCC = -30 V
IC/IB = 10
TJ = 25°C
500
300
100
70
50
30
20
10
7.0
5.0
-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
200
tf
t′s = ts - 1/8 tf
VCC = -30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
MMBT2907AL, SMMBT2907AL
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4
TYPICAL SMALL−SIGNAL Characteristics
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
10
0.01
Figure 8. Source Resistance Effects
Rs, SOURCE RESISTANCE (OHMS)
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
f = 1.0 kHz
IC = -50 A
-100 A
-500 A
-1.0 mA
Rs = OPTIMUM SOURCE RESISTANCE
8.0
6.0
4.0
2.0
0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
10
8.0
6.0
4.0
2.0
050 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k
IC = -1.0 mA, Rs = 430
-500 A, Rs = 560
-50 A, Rs = 2.7 k
-100 A, Rs = 1.6 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
30
Figure 10. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mA)
C, CAPACITANCE (pF)
-0.1
2.0
fT, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
20
10
7.0
5.0
3.0
-0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30
400
300
200
100
80
60
40
30
20
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000
Ceb
Ccb
VCE = -20 V
TJ = 25°C
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.001
0.01
0.1
1
10.10.010.001
0.2
0.3
0.5
0.7
0.8
1.0
1.1
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
150°C
−55°C
25°C
0.4
0.6
0.9
IC/IB = 10
150°C
−55°C
25°C
MMBT2907AL, SMMBT2907AL
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5
TYPICAL SMALL−SIGNAL Characteristics
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
Figure 13. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A)
10.10.010.001
0.2
0.3
0.5
0.6
0.7
0.9
1.1
1.2
VBE(on), BASE−EMITTER VOLTAGE (V)
0.4
0.8
1.0
VCE = 1 V
150°C
−55°C
25°C
Figure 14. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
RVC for VCE(sat)
COEFFICIENT (mV/ °C)
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
RVB for VBE
Figure 15. Safe Operating Area
VCE (Vdc)
1001010.10.01
0.001
0.01
0.1
1
10
IC (A)
Single Pulse Test
@ TA = 25°C
Thermal Limit
100 ms
1 s
10 ms
1 ms
MMBT2907AL, SMMBT2907AL
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6
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT*
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q°°°°
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBT2907ALT1/D
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