VBO160-16NO7
1~ Rectifier Bridge
Standard Rectifier Module
- ~ +~
Part number
VBO160-16NO7
Features / Ad vantages: Applications: Package:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● Diode for main rectification
● For one phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
PWS-E
● Industry standard outline
● RoHS compliant
● Easy to mount with two screws
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
RRM
1600
I160
FSM
2800
DAV
V=V
A
A
=
=
I
3~
Rectifier
1~
IXYS reserves the right to change limits, conditions and dimensions. 20130425aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VBO160-16NO7
V = V
kA²s
kA²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.07
R0.4 K/W
R
min.
160
V
RSM
V
200T = 25°C
VJ
T = °C
VJ
mA3.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
110
P
tot
310 WT = 25°C
C
RK/W0.15
160
1600
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions Unit
1.22
T = 25°C
VJ
150
V
F0
V0.74T = °C
VJ
150
r
F
2.4 mΩ
V0.96T = °C
VJ
I = A
F
V
160
1.15
I = A
F
320
I = A
F
320
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V1600
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
133
j
unction capacitance V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
2.80
3.03
28.3
27.5
kA
kA
kA
kA
2.38
2.57
39.2
38.1
1600
DAV
d =rectangular 0.5
bridge output current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1700
IXYS reserves the right to change limits, conditions and dimensions. 20130425aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VBO160-16NO7
Ratings
XXXX-XXXX YYCW Lot#
Made in Germany Circuit
Diagram
Product
Number
Date Code
Package
T
VJ
°C
M
D
Nm5.75
mounting torque 4.25
T
stg
°C125
storage temperature -40
Weight g273
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
M
T
Nm5.75
terminal torque 4.25
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
12.0
26.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 250 A
per terminal
150-40
terminal to terminal
PWS-E
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
VBO160-16NO7 491381Box 5VBO160-16NO7Standard
2500
3000
ISOL
threshold voltage V0.74
mΩ
V
0 max
R
0 max
slope resistance * 1.2
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130425aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VBO160-16NO7
M6x12
7
3
30
27
6.5
6.5
C~ E~
A+ B-
54
15
12 25
66
26 26
72
80
94
4
5
6
3
1
2
5
5
6
7
2.8 x 0.8
M6
- ~ +~
Outlines PWS-E
IXYS reserves the right to change limits, conditions and dimensions. 20130425aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VBO160-16NO7
0.001 0.01 0.1 1
1000
1500
2000
2500
23456789
1
10
3
10
4
10
5
0 20406080100
0
20
40
60
80
100
0 25 50 75 100 125 150 175
1 10 100 1000 10000
0.001
0.01
0.1
1
[A
2
s]
I
FSM
[A]
t[s]
P
tot
[W]
I
dAVM
[A] T
amb
[°C]
t[ms]
0 25 50 75 100 125 150
0
40
80
120
160
200
240
280
I
dAV
[A]
Z
thJC
[K/W]
50Hz, 80% V
RRM
T
VJ
= 150°C
0.5 1.0 1.5
0
40
80
120
160
200
240
I
F
[A]
V
F
[V]
T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
= 45°C
T
VJ
=125°C
T
VJ
= 25°C
t[ms]
T
C
[°C]
R
i
t
i
0.050 0.02
0.003 0.01
0.100 0.225
0.177 0.8
0.070 0.58
T
VJ
=150°C
R
thA
:
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
0.8 x V
RRM
50 Hz
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I
2
t vs. time per diode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130425aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
