IMAGE SENSOR CCD area image sensor S9060/S9061 series Improved etaloning (interference), high near IR sensitivity S9060/S9061 series is a family of high sensitivity, back-thinned area image sensors with improved etaloning (interference) in the near IR region. This makes S9060/S9061 series ideal for high precision measurement in the near IR region. S9060/S9061 series image sensors have a pixel size of 24 x 24 m and are available in pixel formats of 512 x 256 (type No. suffix: -0908) and 1024 x 256 pixels (type No. suffix: -1008). S9061 series has a one-stage thermoelectric cooler in the same package that cools the image sensor down to -10 C when used at room temperatures. In addition, since both the CCD chip and the TE-cooler are sealed, no dry air is required, thus allowing easy handling. S9060/S9061 series has the same dimensions as S7030/S7031 series and they are pin compatible. Features Applications l Improved etaloning (interference) type l High near IR sensitivity l Non-cooled type: S9060 series l Fluorescence spectroscopy, ICP l Raman spectroscopy l Industrial inspection l Semiconductor inspection l DNA sequencer l Low-light-level detection l Scientific measurement l UV imaging l Bio-photon observation One-stage TE cooled type: S9061 series l Pixel size: 24 x 24 m l Line/pixel binning operation l High quantum efficiency: 90 % or more at peak l Wide spectral response range l Low noise readout l Wide dynamic range l Low dark current by MPP operation l High UV sensitivity and good stability under UV exposure Selection guide Number of Number of total pixels active pixels S9060-0908 532 x 256 512 x 250 Non-cooled S9060-1008 1044 x 256 1024 x 250 S9061-0908 532 x 256 512 x 250 One-stage TE-cooled S9061-1008 1044 x 256 1024 x 250 *1: Custom devices with a two-stage thermoelectric cooler are available on request. Cooling *1 Type No. Active area [mm (H) x mm (V)] 12.288 x 6.000 24.576 x 6.000 12.288 x 6.000 24.576 x 6.000 General rating Parameter Specification Vertical clock 2 phases Horizontal clock 2 phases Output circuit One-stage MOSFET source follower Package 24 pin ceramic DIP W indow material Quartz glass *2 *2: Custom devices without window faceplate or with an AR (anti-reflection) coated sapphire window are available on request. QUANTUM EFFICIENCY (%) 80 S9060/S9061 SERIES 70 60 50 40 30 FRONT-ILLUMINATED TYPE (UV COAT) FRONT-ILLUMINATED TYPE 10 0 200 400 600 800 1000 1200 Window transmittance vs. wavelength (Ta=25 C) 100 PHOTOCURRENT (RELATIVE VALUE) CONVENTIONAL TYPE 90 20 Etaloning characteristic (Typ. Ta=25 C) 100 90 S9060/S9061 SERIES 80 80 60 40 CONVENTIONAL TYPE QUARTZ 70 AR COATED SAPPHIRE 60 50 40 30 20 20 10 0 920 930 940 950 960 970 980 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 WAVELENGTH (nm) WAVELENGTH (nm) WAVELENGTH (nm) (Typ. Ta=25 C) 100 TRANSMITTANCE (%) Spectral response (without window) KMPDB0110EA KMPDB0221EA KMPDB0223EA PRELIMINARY DATA Aug. 2002 1 S9060/S9061 series CCD area image sensor Electrical and optical characteristics (Ta=25 C, unless otherwise noted) Parameter Saturation output voltage Vertical Horizontal Full well capacity *3 Symbol Min. Typ. Max. Unit Vsat 150,000 300,000 Fw x Sv 300,000 600,000 - V 1.8 - 2.2 4,000 200 12,000 600 18,750 9,375 8 75,000 37,500 16 - e rms - 3 200 to 1100 10 - % nm Fw CCD node sensitivity *4 Sv 25 C 0 C Dark current *5 MPP mode (tentative data) DS Readout noise *6 Nr Line binning Area scanning Dynamic range *7 DR Photo response non-uniformity *8 PRNU Spectral response range *3: Large horizontal full well for line binning operation. *4: VOD=20 V, load resistance=22 k *5: Dark current nearly doubles for every 5 to 7 C increase in temperature. *6: -40 C, operating frequency is 80 kHz *7: Dynamic range (DR) = Full well/Readout noise *8: Condition: half of the saturation output voltage. Photo response non-uniformity (PRNU) [%] = Fixed pattern noise (peak to peak) Signal e - V/e - - e /pixel/s - x 100 Dimensional outlines (unit: mm) S9060-0908 S9060-1008 WINDOW 16.3 WINDOW 28.6 2.54 2.54 34.0 44.0 INDEX MARK PIN No. 1 (24 x) 0.5 KMPDA0159EA S9061-0908 4.8 3.8 3.0 (24 x) 0.5 4.4 PHOTOSENSITIVE SURFACE 4.8 4.4 2.4 3.0 3.8 PHOTOSENSITIVE SURFACE 2.4 KMPDA0160EA S9061-1008 WINDOW 28.6 WINDOW 16.3 19.0 4.0 6.0 8.2 22.9 22.4 19.0 4.0 6.0 22.9 ACTIVE AREA 24.58 ACTIVE AREA 12.29 22.4 INDEX MARK PIN No. 1 8.2 22.9 22.4 6.0 8.2 22.4 22.9 ACTIVE AREA 24.58 6.0 8.2 ACTIVE AREA 12.29 2.54 2.54 44.0 34.0 52.0 42.0 60.0 50.0 3.0 (24 x) 0.5 7.7 7.3 6.7 7.7 7.3 6.7 4.8 TE-COOLER 1.0 3.0 TE-COOLER PHOTOSENSITIVE SURFACE 4.8 INDEX MARK PIN No. 1 PHOTOSENSITIVE SURFACE 1.0 INDEX MARK PIN No. 1 (24 x) 0.5 KMPDA0162EA KMPDA0161EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2004 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KMPD1069E01 Jan. 2004 DN