MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM100CSE060 PM100CSE060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM100CSE060 FEATURE a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process. For example, typical VCE(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics. * 3 100A, 600V Current-sense IGBT for 15kHz switching * Monolithic gate drive & protection logic * Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage * Acoustic noise-less 11kW class inverter application APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 1101 950.5 2-2.54 2-2.54 2-2.54 6-2.54 17.02 10.16 10.16 10.16 Screwing depth Min9.0 4-5.5 MOUNTING HOLES 3.22 Terminal code PBT 78 9 N 2.54 10 V 0.50.3 24.5 4-R6 26 26 21.2 +1.0 6-M5NUTS 0.64 2-2.54 0.64 2-2.54 4 LABEL 22 19.4 A : DETAIL 31.6 32.6 1.6 16- 3.22 22 -0.5 67.4 A VN1 NC UN VN WN FO U 11.6 W 11. 12. 13. 14. 15. 16. 4.5 17.5 12 VUPC UP VUP1 VVPC VP VVP1 VWPC WP VWP1 VNC 10.6 P 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 10 12 14 16 11 13 15 740.5 4 56 891 17 20 B 20 20.5 123 Sep. 2001 http://store.iiic.cc/ MITSUBISHI <INTELLIGENT POWER MODULES> PM100CSE060 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM Rfo=1.5k WP NC Fo VNC W N VN1 VN UN VWP1 VWPC VP VVP1 VVPC UP VUP1 VUPC Rfo Gnd In Gnd Fo Vcc Gnd In Si Out Gnd Fo Vcc Si Out Gnd In Gnd Fo Vcc Si Out Gnd In Gnd Fo Vcc Si Out Gnd In Gnd Fo Vcc Gnd In Si Out Gnd Fo Vcc Si Out Th NC N W V U P MAXIMUM RATINGS (Tj = 25C, unless otherwise noted) INVERTER PART Symbol VCES IC ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25C TC = 25C TC = 25C Ratings 600 100 200 328 -20 ~ +150 Unit V A A W C Ratings Unit 20 V 20 V 20 20 V mA CONTROL PART Symbol Parameter VD Supply Voltage VCIN Input Voltage VFO IFO Fault Output Supply Voltage Fault Output Current Condition Applied between : VUP1-VUPC VVP1-VVPC, VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC WP-VWPC, UN * VN * WN-VNC Applied between : FO-VNC Sink current at FO terminal Sep. 2001 http://store.iiic.cc/ MITSUBISHI <INTELLIGENT POWER MODULES> PM100CSE060 FLAT-BASE TYPE INSULATED PACKAGE TOTAL SYSTEM Symbol Parameter Supply Voltage Protected by VCC(PROT) OC & SC VCC(surge) Supply Voltage (Surge) Module Case Operating TC Temperature Storage Temperature Tstg Viso Isolation Voltage Ratings Condition VD = 13.5 ~ 16.5V, Inverter Part, Tj = 125C Start Unit 400 V 500 V (Note-1) -20 ~ +100 C 60Hz, Sinusoidal, Charged part to Base, AC 1 min. -40 ~ +125 2500 C Vrms Applied between : P-N, Surge value or without switching PBT (Note-1) Tc measurement point is as shown below. (Base plate depth 3mm) B P N W V 65mm U Tc THERMAL RESISTANCES Symbol Parameter Test Condition Rth(j-c)Q Inverter IGBT part (per 1 element), (Note-1) Junction to case Thermal Rth(j-c)F Inverter FWDi part (per 1 element), (Note-1) Resistances Rth(j-c')Q Inverter IGBT part (per 1 element), (Note-2) Rth(j-c')F Inverter FWDi part (per 1 element), (Note-2) Case to fin, Thermal grease applied (per 1 module) Rth(c-f) Contact Thermal Resistance (Note-2) TC measurement point is just under the chips. If you use this value, R th(f-a) should be measured just under the chips. Min. -- -- -- -- -- Limits Typ. -- -- -- -- -- Max. 0.38 0.70 0.23 0.36 0.027 Min. -- -- -- 0.8 -- -- -- -- -- -- Limits Typ. 1.7 1.7 2.2 1.2 0.15 0.4 2.4 0.6 -- -- Max. 2.3 2.3 3.3 2.4 0.3 1.0 3.3 1.2 1 10 Unit C/W ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise noted) INVERTER PART Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Test Condition Collector-Emitter Saturation Voltage FWDi Forward Voltage VD = 15V, IC = 100A VCIN = 0V, Pulsed (Fig. 1) -IC = 100A, VD = 15V, VCIN = 15V Switching Time VD = 15V, VCIN = 15V0V VCC = 300V, IC = 100A Tj = 125C Inductive Load (upper and lower arm) Collector-Emitter Cutoff Current VCE = VCES, VCIN = 15V (Fig. 4) Tj = 25C Tj = 125C (Fig. 2) (Fig. 3) Tj = 25C Tj = 125C Unit V V s mA Sep. 2001 http://store.iiic.cc/ MITSUBISHI <INTELLIGENT POWER MODULES> PM100CSE060 FLAT-BASE TYPE INSULATED PACKAGE CONTROL PART Symbol Parameter Test Condition VN1-VNC VXP1-VXPC ID Circuit Current VD = 15V, VCIN = 15V Vth(ON) Vth(OFF) Input ON Threshold Voltage Input OFF Threshold Voltage OC Over Current Trip Level SC toff(OC) OT OTr UV UVr IFO(H) IFO(L) Short Circuit Trip Level Over Current Delay Time Supply Circuit Under-Voltage Protection Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN-VNC Tj = -20C VD = 15V (Fig. 5,6) Tj = 25C Tj = 125C -20 Tj 125C, VD = 15V (Fig. 5,6) VD = 15V (Fig. 5,6) Trip level Base-plate Reset level Temperature detection, VD = 15V Trip level -20 Tj 125C Reset level Fault Output Current VD = 15V, VFO = 15V (Note-3) Minimum Fault Output Pulse Width VD = 15V (Note-3) tFO Over Temperature Protection (Note-3) Fault Fault Fault Fault output output output output Min. -- -- 1.2 1.7 -- 264 158 -- -- 111 -- 11.5 -- -- -- Limits Typ. 40 13 1.5 2.0 -- 311 -- 360 10 118 100 12.0 12.5 -- 10 1.0 1.8 Min. 2.5 2.5 -- Limits Typ. 3.0 3.0 560 Max. 55 18 1.8 2.3 520 430 -- -- -- 125 -- 12.5 -- 0.01 15 -- Unit mA V A A s C V mA ms is given only when the internal OC, SC, OT & UV protection. of OT protection operate by lower arm. of OC, SC protection given pulse. of OT, UV protection given pulse while over level. MECHANICAL RATINGS AND CHARACTERISTICS Symbol -- -- -- Test Condition Parameter Mounting torque Mounting torque Weight Main terminal Mounting part screw : M5 screw : M5 -- Max. 3.5 3.5 -- Unit N*m N*m g RECOMMENDED CONDITIONS FOR USE Symbol VCC Parameter Supply Voltage VD Control Supply Voltage VCIN(ON) VCIN(OFF) Input ON Voltage Input OFF Voltage fPWM PWM Input Frequency tdead Arm Shoot-through Blocking Time Test Condition Applied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-4) Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN-VNC Using Application Circuit input signal of IPM, 3 sinusoidal PWM VVVF inverter (Fig. 8) For IPM's each input signals (Fig. 7) Recommended value 400 Unit V 15 1.5 V 0.8 4.0 V 20 kHz 2.5 s (Note-4) Allowable Ripple rating of Control Voltage : dv/dt 5V/s, 2Vp-p Sep. 2001 http://store.iiic.cc/ MITSUBISHI <INTELLIGENT POWER MODULES> PM100CSE060 FLAT-BASE TYPE INSULATED PACKAGE PRECAUTIONS FOR TESTING 1. Before appling any control supply voltage (VD), the input terminals should be pulled up by resistores, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing "OC" and "SC" tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) P, (U,V,W) IN (Fo) VCIN P, (U,V,W) Ic V IN (Fo) VCIN -Ic V (15V) (0V) VD (all) U,V,W, (N) VD (all) Fig. 1 VCE(sat) Test U,V,W, (N) Fig. 2 VEC Test a) Lower Arm Switching P VCIN (15V) trr Signal input (Upper Arm) CS VCIN Signal input (Lower Arm) VCE Irr U,V,W Ic Vcc Fo 90% 90% N VD (all) b) Upper Arm Switching Ic 10% 10% 10% 10% P tc (on) VCIN Signal input (Upper Arm) CS VCIN (15V) Signal input (Lower Arm) tc (off) VCIN U,V,W Vcc td (on) tr td (off) tf Fo (ton= td (on) + tr) (toff= td (off) + tf) N Ic VD (all) Fig. 3 Switching time Test circuit and waveform P, (U,V,W) A VCIN (15V) VCIN IN (Fo) Pulse VCE VD (all) Over Current U,V,W, (N) OC IC toff (OC) Fig. 4 ICES Test P, (U,V,W) Constant Current Short Circuit Current IN (Fo) Constant Current VCC SC VCIN IC VD (all) U,V,W, (N) IC Fig. 5 OC and SC Test Fig. 6 OC and SC Test waveform P VD VCINP U,V,W Vcc VD VCINN N Ic VCINP 0V t VCINN 0V t tdead tdead tdead Fig. 7 Dead time measurement point example Sep. 2001 http://store.iiic.cc/ MITSUBISHI <INTELLIGENT POWER MODULES> PM100CSE060 FLAT-BASE TYPE INSULATED PACKAGE P 10 20k VUP1 Vcc VD IF OUT + - Si UP In VUPC U GND GND 0.1 VVP1 VD Vcc Si VP In VVPC V GND GND VWP1 VD OUT Vcc M OUT Si WP In VWPC W GND GND 20k Vcc 10 IF Fo UN OUT Si In GND GND 0.1 N TEMP 20k Vcc 10 IF Fo VN Th OUT Si In GND GND 0.1 20k VD VN1 Vcc 10 IF Fo WN 0.1 In OUT Si GND GND VNC NC NC 5V 1k Fo Rfo : Interface which is the same as the U-phase Fig. 8 Application Example Circuit NOTES FOR STABLE AND SAFE OPERATION ; Design the PCB pattern to minimize wiring length between opto-coupler and IPM's input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. Quick opto-couplers: TPLH, TPLH 0.8s. Use High CMR type. The line between opto-coupler and intelligent module should be shortened as much as possible to minimize the floating capacitance. Slow switching opto-coupler: recommend to use at CTR = 100 ~ 200%, Input current = 8 ~ 10mA, to work in active. Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal. Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system. * * * * * * Sep. 2001 http://store.iiic.cc/